Configurable multi-state non-volatile memory behaviors in Ti3C2 nanosheets

Charge-Localized Retention and Long-Term Memory Enabled by Cooperating Sterically Confined Molecular Crystallization with Spiro[fluorene-9,9'-xanthene]-Based Csp3-Hindrance

Charge localization of memory materials plays a crucial role in the endurance and retention ability of organic nonvolatile memory, which is completely opposite from the charge delocalization of high-mobility materials. However, charge transfer of both though-space and through-bond based on molecular design principles still faces challenges. Herein, a nonplanar wide-bandgap semiconductor with Csp3-hindrance (DOCH3-DDPA-SFX) has been designed and synthesized. An effective crystallization effect of self-assembled two-dimensional nanosheets on charge trapping dynamics and kinetics is visualized by Kelvin probe force microscopy (KPFM). The trapped charges are localized completely on a single nanosheet, which has better charge trapping and retention properties than an amorphous film. Meanwhile, crystallization also greatly improves structure stability. Combining DFT theoretical calculations, the mechanisms of localization and long-term retention are discussed. The steric crystallization effects on the charge localization will guide the effective design of single-component semiconducting charge-memory materials by molecular assembly and aggregate control for high-performance organic memory.

Interfacial interactions of doped-Ti3C2 MXene/MAPbI3 heterostructures: surfaces and the theoretical approach

The work function (WF) of perovskite materials is essential for developing optoelectronic devices enabling efficient charge transfer at their interfaces. Perovskite's WF can be tuned by MXenes, a new class of two-dimensional (2D) early transition metal carbides, nitrides, and carbonitrides. Their variable surface terminations or the possibility of introducing elemental dopants could advance perovskites. However, the influence of doped-MXenes on perovskite materials is still not fully understood and elaborated. This study provides mechanistic insight into verifying the tunability of MAPbI3 WF by hybridizing with fluorine-terminated Ti3C2Tx (F-MXene) and nitrogen-doped Ti3C2Tx (N-MXene). We first reveal the interfacial interaction between MAPbI3 and MXenes via X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and photoluminescence spectroscopy (PL). UPS supported by density functional theory (DFT) calculations allowed the description of the influence of F and N on MXene's WF. Furthermore, we developed MAPbI3/MXene heterostructures using F- and N-MXenes. The F-MXenes extended the most WF of MAPbI3 from 4.50 eV up to 3.00 eV, compared to only a small shift for N-MXene. The underlying mechanism was charge transfer from low WF F-MXene to MAPbI3, as demonstrated by PL quenching in MAPbI3/F-MXene heterostructures. Altogether, this work showcases the potential of fluorine-doped MXenes over nitrogen-doped MXenes in advancing perovskite heterostructures, thus opening a door for efficient optoelectronic devices.

Porous crystalline materials for memories and neuromorphic computing systems

Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.

Memristive Effect in Ti3 C2 Tx (MXene) Polyelectrolyte Multilayers

The emerging novel class of two-dimensional materials - MХenes - have attracted significant research attention. However, there are only few reports on using the most prominent member of the MXene family, Ti3 C2 Tx , as an active material for memristive devices within a polyelectrolyte matrix and its deposition on inert electrodes like ITO and Pt. In this study, we systematically investigate Ti3 C2 Tx MXenes synthesized with two classical delamination agents, such as lithium chloride and tetramethylammonium hydroxide, to identify the most suitable candidate for memristive device applications. The characteristics of memristors based on the hybrid structures consisting of MXene-polyelectrolyte multilayers, specifically polyethyleneimine (PEI) and poly(sodium 4-styrenesulfonate) (PSS) are explored. The PEI(MXene)/PSS memristor exhibits a voltage threshold (VSET/RESET ) range of 1.5-2.0 V, enabling the transition from a high-resistive state (HRS) to a low-resistive state (LRS), along with a significant current switching ratio of approximately two orders of magnitude. The observed VSET/RESET difference of approximately 4 V is further supported by density functional theory (DFT) calculated redox potential. These findings underscore the potential of polyelectrolyte-based memristors, such as the in PEI-Ti3 C2 Tx -PSS system, in facilitating the development of highly functional, self-assembled memristive devices with diverse applications.

Recent progress in energy, environment, and electronic applications of MXene nanomaterials

Since the discovery of graphene, two-dimensional (2D) materials have gained widespread attention, owing to their appealing properties for various technological applications. Etched from their parent MAX phases, MXene is a newly emerged 2D material that was first reported in 2011. Since then, a lot of theoretical and experimental work has been done on more than 30 MXene structures for various applications. Given this, in the present review, we have tried to cover the multidisciplinary aspects of MXene including its structures, synthesis methods, and electronic, mechanical, optoelectronic, and magnetic properties. From an application point of view, we explore MXene-based supercapacitors, gas sensors, strain sensors, biosensors, electromagnetic interference shielding, microwave absorption, memristors, and artificial synaptic devices. Also, the impact of MXene-based materials on the characteristics of respective applications is systematically explored. This review provides the current status of MXene nanomaterials for various applications and possible future developments in this field.

Resistive Switching Crossbar Arrays Based on Layered Materials

Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>10⁸  devices mm^{- 2} ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm² ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO₂/Al-ZnO/HfO₂) tri-layer structure device was prepared using the sol-gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO₂ layers. The device had excellent RS properties, such as an excellent switch ratio of 10⁴, retention of 10⁴ s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.

Reproducible Non-Volatile Multi-State Storage and Emulation of Synaptic Plasticity Based on a Copper-Nanoparticle-Embedded HfOx/ZnO Bilayer with Ultralow-Switching Current and Ideal Data Retention

The multilevel properties of a memristor are significant for applications in non-volatile multi-state storage and electronic synapses. However, the reproducibility and stability of the intermediate resistance states are still challenging. A stacked HfOx/ZnO bilayer embedded with copper nanoparticles was thus proposed to investigate its multilevel properties and to emulate synaptic plasticity. The proposed memristor operated at the microampere level, which was ascribed to the barrier at the HfOx/ZnO interface suppressing the operational current. Compared with the stacked HfOx/ZnO bilayer without nanoparticles, the proposed memristor had a larger ON/OFF resistance ratio (~330), smaller operational voltages (absolute value < 3.5 V) and improved cycle-to-cycle reproducibility. The proposed memristor also exhibited four reproducible non-volatile resistance states, which were stable and well retained for at least ~1 year at 85 °C (or ~10 years at 70 °C), while for the HfOx/ZnO bilayer without copper nanoparticles, the minimum retention time of its multiple resistance states was ~9 days at 85 °C (or ~67 days at 70 °C). Additionally, the proposed memristor was capable of implementing short-term and long-term synaptic plasticities.

Advances in Emerging Photonic Memristive and Memristive-Like Devices

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

Low-Power Memristor Based on Two-Dimensional Materials

The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.

An Assessment of MXenes through Scanning Probe Microscopy

Recently, exploring the unique properties of 2D materials has constituted a new wave of research, which lead these materials to enormous applications ranging from optoelectronics to healthcare systems. Due to the profusion of surface terminated functionalities, MXenes have become an emerging class of 2D materials that can be easily integrated with other materials. The versatility of MXenes allows to tune their finest material properties for further device applications. This review initiates with the classification of preparation methods of MXenes, where the authors elaborate on the significance of top-down approaches including the exfoliation of solid layers. Next, the focus is diverted toward the materials analysis of MXenes including their terminations analysis as well as their intriguing electrical and mechanical behaviors through scanning probe microscopy. Finally, critical challenges and perspectives for MXenes analysis and applications are explored and discussed. Therefore, this comprehensive review can encourage researchers, and offer a precise direction to employ MXenes in various applications.

Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System

The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well-crystallized two-dimensional (2D) h-BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag⁺ between h-BN interlayer, is developed. The BN-DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN-DM to a self-made triboelectric nanogenerator (TENG), a self-power mechano-nociceptor system, which can successfully mimic the important nociceptor features of "threshold", "relaxation" and "allodynia" is designed.

Water-dispersible Ti3C2Tz MXene nanosheets by molten salt etching

Molten-salt etching of Ti3AlC2 MAX phase offers a promising route to produce 2D Ti3C2Tz (MXene) nanosheets without hazardous HF. However, molten-salt etching results in MXene clays that are not water dispersible, thus preventing further processing. This occurs because molten-salt etching results in a lack of -OH terminal groups rendering the MXene clay hydrophobic. Here, we demonstrate a method that produces water-dispersible Ti3C2Tz nanosheets using molten salt (SnF2) to etch. In molten salt etching, SnF2 diffuses between the layers to form AlF3 and Sn as byproducts, separating the layers. The stable, aqueous Ti3C2Tz dispersion yields a ζ potential of -31.7 mV, because of -OH terminal groups introduced by KOH washing. X-ray diffraction and electron microscopy confirm the formation of Ti3C2Tz etched clay with substantial d-spacing as compared with clay etched with HF. This work is the first to use molten salt etching to successfully prepare colloidally stable aqueous dispersions of Ti3C2Tz nanosheets.

Designing of Efficient Bifunctional ORR/OER Pt Single-Atom Catalysts Based on O-Terminated MXenes by First-Principles Calculations

MXenes have been used as substrate materials for single-atom catalysts (SACs) due to their unique two-dimensional (2D) structure, high surface area, and high electronic conductivity. Oxygen is the primary terminating group of MXenes; however, all of the reported Pt SACs till now are fabricated with F-terminated MXenes. According to the first-principles calculations of this work, the failure of using O-terminated MXenes as substrates is due to the low charge density around Pt and C, which weakens the catalytic activity of Pt. By adjusting the electronic structure of M2C using a second submetal with a lower work function than M, 18 potential bifunctional Pt SACs are constructed based on O-terminated bimetal MXenes. After further consideration of some important practical application factors such as overpotential, solvation effect, and reaction barriers, only four of them, i.e., Cr2Nb2C3O2-VO-Pt, Cr2Ta2C3O2-VO-Pt, Cr2NbC2O2-VO-Pt, and Cr2TaC2O2-VO-Pt, are screened as bifunctional oxygen reduction reaction/oxygen evolution reaction (ORR/OER) catalysts. All of these screened SACs are originated from Cr-based MXenes, implying the significance of Cr-based MXenes in designing bifunctional Pt SACs.

Exploration of 2D Ti3C2 MXene for all solution processed piezoelectric nanogenerator applications

A new 2D titanium carbide (Ti₃C₂), a low dimensional material of the MXene family has attracted remarkable interest in several electronic applications, but its unique structure and novel properties are still less explored in piezoelectric energy harvesters. Herein, a systematic study has been conducted to examine the role of Ti₃C₂ multilayers when it is incorporated in the piezoelectric polymer host. The 0.03 g/L of Ti₃C₂ has been identified as the most appropriate concentration to ensure the optimum performance of the fabricated device with a generated output voltage of about 6.0 V. The probable reasons might be due to the uniformity of nanofiller distribution in the polyvinylidene difluoride (PVDF) and the incorporation of Ti₃C₂ in a polymer matrix is found to enhance the β-phase of PVDF and diminish the undesired α-phase configuration. Low tapping frequency and force were demonstrated to scavenge electrical energy from abundant mechanical energy resources particularly human motion and environmental stimuli. The fabricated device attained a power density of 14 µW.cm^-2 at 10.8 MΩ of load resistor which is considerably high among 2D material-based piezoelectric nanogenerators. The device has also shown stable electrical performance for up to 4 weeks and is practically able to store energy in a capacitor and light up a LED. Hence, the Ti₃C₂-based piezoelectric nanogenerator suggests the potential to realize the energy harvesting application for low-power electronic devices.

Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator

Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO₂ nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.

Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing

Memristive devices are widely recognized as promising hardware implementations of neuromorphic computing. Herein, a flexible and transparent memristive synapse based on polyvinylpyrrolidone (PVP)/N-doped carbon quantum dot (NCQD) nanocomposites through regulating the NCQD doping concentration is reported. In situ Kelvin probe force microscopy showed that the trapping/detrapping of space charge can account for the memristive mechanism of the device. Diverse synaptic functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-timing-dependent plasticity (STDP), and the transition from short-term plasticity (STP) to long-term plasticity (LTP), are emulated, enabling the PVP-NCQD hybrid system to be a valuable candidate for the design of novel artificial neural architectures. In addition, the synaptic device showed excellent flexibility against mechanical strain after repeated bending tests. This work provides a new approach to develop flexible and transparent organic artificial synapses for future wearable neuromorphic computing systems.

Bi2O2Se-Based Memristor-Aided Logic

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi₂O₂Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi₂O₂Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi₂O₂Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi₂O₂Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.

Tuning the Magnetic Properties of Two-Dimensional MXenes by Chemical Etching

Two-dimensional materials based on transition metal carbides have been intensively studied due to their unique properties including metallic conductivity, hydrophilicity and structural diversity and have shown a great potential in several applications, for example, energy storage, sensing and optoelectronics. While MXenes based on magnetic transition elements show interesting magnetic properties, not much is known about the magnetic properties of titanium-based MXenes. Here, we measured the magnetic properties of Ti3C2Tx MXenes synthesized by different chemical etching conditions such as etching temperature and time. Our magnetic measurements were performed in a superconducting quantum interference device (SQUID) vibrating sample. These data suggest that there is a paramagnetic-antiferromagnetic (PM-AFM) phase transition and the transition temperature depends on the synthesis procedure of MXenes. Our observation indicates that the magnetic properties of these MXenes can be tuned by the extent of chemical etching, which can be beneficial for the design of MXenes-based spintronic devices.

Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning

As one of the emerging neuromorphic computing devices, memristors may break through the limitation of traditional computers with a von Neumann architecture. However, the development of flexible memristors is limited by the high-temperature fabrication process, large operating voltage and non-uniform distribution of resistance. The room-temperature process has attracted great attention due to its advantages of low thermal dissipation, low cost and excellent compatibility with flexible electronics. Here, we proposed a fully physical vapour deposition (PVD) process for fabricating a memristor without additional heat treatment. The device showed excellent resistive switching characteristics with ultralow set/reset voltages (0.48 V/-0.39 V), uniform distribution (10%/15%), stable retention characteristic, multilevel storage behavior and reliable flexibility (radius of 10 mm). With continuously modulated conductance, typical synaptic plasticities were simulated by our flexible biomemristor, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD) and learning-forgetting curve. Furthermore, the array learning behavior like that of the human brain was simulated with these trainable biomemristors. This study paves a new way for developing low-cost, wearable, neuromorphic computing electronics at room temperature and expands the applications of artificial synapse arrays.

Surface Functionalization of Single-Layered Ti3C2Tx MXene and Its Application in Multilevel Resistive Memory

MXenes are a new type of two-dimensional material, and they have attracted extensive attention because of their outstanding conductivity and rich surface functional groups that make surface engineering easy and possible for adapting to diverse applications. However, there are scarce studies on surface engineering of MXene. Herein, we demonstrate for the first time that octylphosphonic acid-modified Ti₃C₂T_x MXene can be used as an active layer for memory devices and exhibits stable ternary memory behavior. Low threshold voltage, steady retention time, clearly distinguishable resistance states, high ON/OFF rate, OFF/ON1/ON2 = 1:10^2.7:10^4.1, and considerable ternary yield (58%) were obtained. In the proof of the mechanism, in situ conductive atomic force microscopy was conducted and the electrode-area relationship was analyzed to demonstrate that charge trapping and filament conduction are more suitable in the nonvolatile information memory of Ti₃C₂T_x-OP MXene devices. In addition, a polyethylene-terephthalate-based flexible Ti₃C₂T_x-OP memory device can maintain its stable ternary memory performance after being bent 5000 times. This work provides an easy method for surface modification of MXene and broadens the field of MXene.

Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

In recent years, halide perovskite quantum dots (HP-QDs) based composites have been widely developed and used in various applications owing to their unique photonic, electronic and mechanical properties, as well as high stability to water, oxygen, heat and illumination. Remarkable efforts have been made in the synthesis and applications of these materials in photonics, electronics, sensors and other fields. Besides these topics, we also cover enhancement of optoelectronic properties as well as chemical, thermal and photostability of HP-QDs-based composites. We hope this review will promote both the development and applications of perovskite-based materials.

Facile Synthesis of Ti3C2Tx-Poly(vinylpyrrolidone) Nanocomposites for Nonvolatile Memory Devices with Low Switching Voltage

MXenes, an emerging class of two-dimensional (2D) transition-metal carbide materials, have received increasing attention for their interesting physiochemical properties. For not only MXenes but also other 2D materials, delamination is a requisite step for the exploitation of their unique properties. In this work, a facile method for exfoliating Ti₃C₂T_x MXene to nanosheets of small size with the aid of poly(vinylpyrrolidone) (PVP) is designed, which has never been reported to our knowledge. Since both hydrophobic methylene groups and hydrophilic amide groups are provided with PVP, this method is applicable in a wide range of solvents, such as ethanol, water, and chloroform. Considering the charge detrapping and trapping behavior of 2D transition-metal materials in PVP dielectric, a memory device with the configuration of reduced graphene oxide (rGO)/Ti₃C₂T_x-PVP/Au is directly fabricated with these well-dispersed Ti₃C₂T_x-PVP composites by the solution process technique. Interestingly, the resultant device exhibits a typical bistable electrical switching, ultralow switching voltage (∼0.9 V), and a nonvolatile rewritable memory effect with the function of flash. This work might pave the way of using MXenes for future data storage, which is an indispensable field nowadays.

Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity

We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.