Difference frequency generation in monolayer MoS2

The Kurtz-Perry Powder Technique Revisited: A Study of the Effect of Reference Selection on Powder Second-Harmonic Generation Response

The accurate evaluation of nonlinear optical (NLO) coefficient, the main parameter affecting light conversion efficiency, plays a crucial role in the development of NLO materials. The Kurtz-Perry powder technique can evaluate second-harmonic generation (SHG) intensity in pristine powder form, saving a significant amount of time and energy in the preliminary screening of materials. However, the Kurtz-Perry method has recently been subject to some controversy due to the limitations of the Kurtz-Perry theory and the oversimplified experimental operation. Therefore, it is very meaningful to revisit and develop the Kurtz-Perry technique. In this work, on the basis of introducing the light scattering effect into the original Kurtz-Perry theory, the theoretical expression of second-harmonic generation intensity with respect to band gap and refractive index are analyzed. In addition, the reference-dependent SHG measurements were carried out on polycrystalline LiB₃O₅ (LBO), AgGaQ₂ (Q = S, Se), BaGa₄Q₇ (Q = S, Se), and ZnGeP₂ (ZGP), and the results of SHG response emphasize the importance of using appropriate references to the Kurtz-Perry method. In order to obtain reliable values of nonlinear coefficients, two criteria for selecting a reference compound were proposed: (1) it should possess a band gap close to that of the sample to be measured and (2) it should possess a refractive index close to that of the sample to be measured. This work might shed light on improvements in accuracy that can be made for effective NLO coefficients obtained using the Kurtz-Perry method.

Chirality logic gates

The ever-growing demand for faster and more efficient data transfer and processing has brought optical computation strategies to the forefront of research in next-generation computing. Here, we report a universal computing approach with the chirality degree of freedom. By exploiting the crystal symmetry-enabled well-known chiral selection rules, we demonstrate the viability of the concept in bulk silica crystals and atomically thin semiconductors and create ultrafast (<100-fs) all-optical chirality logic gates (XNOR, NOR, AND, XOR, OR, and NAND) and a half adder. We also validate the unique advantages of chirality gates by realizing multiple gates with simultaneous operation in a single device and electrical control. Our first demonstrations of logic gates using chiral selection rules suggest that optical chirality could provide a powerful degree of freedom for future optical computing.

Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS₂ , such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier-exciton and carrier-phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

Giant All-Optical Modulation of Second-Harmonic Generation Mediated by Dark Excitons

All-optical control of nonlinear photonic processes in nanomaterials is of significant interest from a fundamental viewpoint and with regard to applications ranging from ultrafast data processing to spectroscopy and quantum technology. However, these applications rely on a high degree of control over the nonlinear response, which still remains elusive. Here, we demonstrate giant and broadband all-optical ultrafast modulation of second-harmonic generation (SHG) in monolayer transition-metal dichalcogenides mediated by the modified excitonic oscillation strength produced upon optical pumping. We reveal a dominant role of dark excitons to enhance SHG by up to a factor of ∼386 at room temperature, 2 orders of magnitude larger than the current state-of-the-art all-optical modulation results. The amplitude and sign of the observed SHG modulation can be adjusted over a broad spectral range spanning a few electronvolts with ultrafast response down to the sub-picosecond scale via different carrier dynamics. Our results not only introduce an efficient method to study intriguing exciton dynamics, but also reveal a new mechanism involving dark excitons to regulate all-optical nonlinear photonics.

Broadband Plasmon-Enhanced Four-Wave Mixing in Monolayer MoS2

Two-dimensional transition-metal dichalcogenide monolayers have remarkably large optical nonlinearity. However, the nonlinear optical conversion efficiency in monolayer transition-metal dichalcogenides is typically low due to small light-matter interaction length at the atomic thickness, which significantly obstructs their applications. Here, for the first time, we report broadband (up to ∼150 nm) enhancement of optical nonlinearity in monolayer MoS₂ with plasmonic structures. Substantial enhancement of four-wave mixing is demonstrated with the enhancement factor up to three orders of magnitude for broadband frequency conversion, covering the major visible spectral region. The equivalent third-order nonlinearity of the hybrid MoS₂-plasmonic structure is in the order of 10^-17 m²/V², far superior (∼10-100-times larger) to the widely used conventional bulk materials (e.g., LiNbO₃, BBO) and nanomaterials (e.g., gold nanofilms). Such a considerable and broadband enhancement arises from the strongly confined electric field in the plasmonic structure, promising for numerous nonlinear photonic applications of two-dimensional materials.

High mobility field-effect transistors based on MoS2crystals grown by the flux method

Two-dimensional (2D) molybdenum disulphide (MoS₂) transition metal dichalcogenides (TMDs) have great potential for use in optical and electronic device applications; however, the performance of MoS₂is limited by its crystal quality, which serves as a measure of the defects and grain boundaries in the grown material. Therefore, the high-quality growth of MoS₂crystals continues to be a critical issue. In this context, we propose the formation of high-quality MoS₂crystals via the flux method. The resulting electrical properties demonstrate the significant impact of crystal morphology on the performance of MoS₂field-effect transistors. MoS₂made with a relatively higher concentration of sulphur (a molar ratio of 2.2) and at a cooling rate of 2.5 °C h^-1yielded good quality and optimally sized crystals. The room-temperature and low-temperature (77 K) electrical transport properties of MoS₂field-effect transistors (FETs) were studied in detail, with and without the use of a hexagonal boron nitride (h-BN) dielectric to address the mobility degradation issue due to scattering at the SiO₂/2D material interface. A maximum field-effect mobility of 113 cm²V^-1s^-1was achieved at 77 K for the MoS₂/h-BN FET following high-quality crystal formation by the flux method. Our results confirm the achievement of large-scale high-quality crystal growth with reduced defect density using the flux method and are key to achieving higher mobility in MoS₂FET devices in parallel with commercially accessible MoS₂crystals.

Difference-frequency generation in optically poled silicon nitride waveguides

Difference-frequency generation (DFG) is elemental for nonlinear parametric processes such as optical parametric oscillation and is instrumental for generating coherent light at long wavelengths, especially in the middle infrared. Second-order nonlinear frequency conversion processes like DFG require a second-order susceptibility χ ⁽²⁾, which is absent in centrosymmetric materials, e.g. silicon-based platforms. All-optical poling is a versatile method for inducing an effective χ ⁽²⁾ in centrosymmetric materials through periodic self-organization of charges. Such all-optically inscribed grating can compensate for the absence of the inherent second-order nonlinearity in integrated photonics platforms. Relying on this induced effective χ ⁽²⁾ in stoichiometric silicon nitride (Si₃N₄) waveguides, second-order nonlinear frequency conversion processes, such as second-harmonic generation, were previously demonstrated. However up to now, DFG remained out of reach. Here, we report both near- and non-degenerate DFG in all-optically poled Si₃N₄ waveguides. Exploiting dispersion engineering, particularly rethinking how dispersion can be leveraged to satisfy multiple processes simultaneously, we unlock nonlinear frequency conversion near 2 μm relying on all-optical poling at telecommunication wavelengths. The experimental results are in excellent agreement with theoretically predicted behaviours, validating our approach and opening the way for the design of new types of integrated sources in silicon photonics.