1
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Mahmoudi A, Bouaziz M, Chapuis N, Kremer G, Chaste J, Romanin D, Pala M, Bertran F, Fèvre PL, Gerber IC, Patriarche G, Oehler F, Wallart X, Ouerghi A. Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructure. ACS NANO 2023; 17:21307-21316. [PMID: 37856436 DOI: 10.1021/acsnano.3c05818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that a rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on a gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on a GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the Γ point of the Brillouin zone. The epitaxial growth of WSe2/GaP(111)B helps to understand the fundamental properties of these 2D/3D heterostructures, toward their implementation in future devices.
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Affiliation(s)
- Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Meryem Bouaziz
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Niels Chapuis
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F59000 Lille, France
| | - Geoffroy Kremer
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Julien Chaste
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Davide Romanin
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Marco Pala
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - François Bertran
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Patrick Le Fèvre
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077 Toulouse, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Xavier Wallart
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F59000 Lille, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
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2
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Ripoll-Sau J, Calleja F, Casado Aguilar P, Ibarburu IM, Vázquez de Parga AL, Miranda R, Garnica M. Phase control and lateral heterostructures of MoTe 2 epitaxially grown on graphene/Ir(111). NANOSCALE 2022; 14:10880-10888. [PMID: 35848284 DOI: 10.1039/d2nr03074h] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Engineering the growth of the different phases of two-dimensional transition metal dichalcogenides (2D-TMDs) is a promising way to exploit their potential since the phase determines their physical and chemical properties. Here, we report on the epitaxial growth of monolayer MoTe2 on graphene on an Ir(111) substrate. Scanning tunneling microscopy and spectroscopy provide insights into the structural and electronic properties of the different polymorphic phases, which remain decoupled from the substrate due to the weak interaction with graphene. In addition, we demonstrate a great control of the relative coverage of the relevant 1T' and 1H MoTe2 phases by varying the substrate temperature during the growth. In particular, we obtain large areas of the 1T' phase exclusively or the coexistence of both phases with different ratios.
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Affiliation(s)
- Joan Ripoll-Sau
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Fabian Calleja
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
| | - Pablo Casado Aguilar
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Iván M Ibarburu
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Amadeo L Vázquez de Parga
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Rodolfo Miranda
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Manuela Garnica
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049 Madrid, Spain
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3
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Pierucci D, Mahmoudi A, Silly M, Bisti F, Oehler F, Patriarche G, Bonell F, Marty A, Vergnaud C, Jamet M, Boukari H, Lhuillier E, Pala M, Ouerghi A. Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe 2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy. NANOSCALE 2022; 14:5859-5868. [PMID: 35362486 DOI: 10.1039/d2nr00458e] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane X-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshift of about 0.56 eV toward the Fermi level with respect to the VBM of the WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.
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Affiliation(s)
- Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Mathieu Silly
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, F91192 Gif sur Yvette, France
| | - Federico Bisti
- Dipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, 67100 L'Aquila, Italy
| | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Frédéric Bonell
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Alain Marty
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Céline Vergnaud
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Matthieu Jamet
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Hervé Boukari
- Université Grenoble Alpes, CNRS and Grenoble INP, Institut Néel, F-38000 Grenoble, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Marco Pala
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
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4
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Hong W, Park C, Shim GW, Yang SY, Choi SY. Wafer-Scale Uniform Growth of an Atomically Thin MoS 2 Film with Controlled Layer Numbers by Metal-Organic Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50497-50504. [PMID: 34657426 DOI: 10.1021/acsami.1c12186] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The growth control of a molybdenum disulfide (MoS2) thin film, including the number of layers, growth rate, and electrical property modulation, remains a challenge. In this study, we synthesized MoS2 thin films using the metal-organic chemical vapor deposition (MOCVD) method with a 2 inch wafer scale and achieved high thickness uniformity according to the positions on the substrate. In addition, we successfully controlled the number of MoS2 layers to range from one to five, with a growth rate of 10 min per layer. The layer-dependent optical and electrical properties were characterized by photoluminescence, Raman spectroscopy, differential reflectance spectroscopy, and field effect transistors. To guide the growth of MoS2, we summarized the relation between the growth aspects and the precursor control in the form of a growth map. Reference to this growth map enabled control of the growth rate, domain density, and domain size according to the application purposes. Finally, we confirmed the electrical performance of MOCVD-grown MoS2 with five layers under a high-κ dielectric environment, which exhibited an on/off current ratio of 10∼6 and a maximum field effect mobility of 8.6 cm2 V-1 s-1.
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Affiliation(s)
- Woonggi Hong
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Displays, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Cheolmin Park
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Displays, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Gi Woong Shim
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Displays, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Yoon Yang
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Displays, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Displays, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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5
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Ludwiczak K, Da̧browska AK, Binder J, Tokarczyk M, Iwański J, Kurowska B, Turczyński J, Kowalski G, Bożek R, Stȩpniewski R, Pacuski W, Wysmołek A. Heteroepitaxial Growth of High Optical Quality, Wafer-Scale van der Waals Heterostrucutres. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47904-47911. [PMID: 34606228 PMCID: PMC8517960 DOI: 10.1021/acsami.1c11867] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Accepted: 09/16/2021] [Indexed: 05/05/2023]
Abstract
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers although only for materials of sufficient crystalline quality and so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow the growth of large-scale, high-quality TMD monolayers but also allow the growth to be performed directly on large-scale epitaxial hBN. In this work, we address this problem and demonstrate that MoSe2 of high optical quality can be directly grown on epitaxial hBN on an entire 2 in. wafer. We developed a combined growth theme for which hBN is first synthesized at high temperature by metal organic vapor phase epitaxy (MOVPE) and as a second step MoSe2 is deposited on top by molecular beam epitaxy (MBE) at much lower temperatures. We show that this structure exhibits excellent optical properties, manifested by narrow excitonic lines in the photoluminescence spectra. Moreover, the material is homogeneous on the area of the whole 2 in. wafer with only ±0.14 meV deviation of excitonic energy. Our mixed growth technique may guide the way for future large-scale production of high quality TMD/hBN heterostructures.
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Affiliation(s)
- Katarzyna Ludwiczak
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | | | - Johannes Binder
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Mateusz Tokarczyk
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Jakub Iwański
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Bogusława Kurowska
- Institute
of Physics Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
| | - Jakub Turczyński
- Institute
of Physics Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
| | - Grzegorz Kowalski
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Rafał Bożek
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Roman Stȩpniewski
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Wojciech Pacuski
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - Andrzej Wysmołek
- Faculty
of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
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