1
|
Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
Collapse
Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
| |
Collapse
|
2
|
Liang R, Zhu L, Liu H, Ye M, Shu L, Zheng R, Ke S. Domain Matching Strategy for Orientation Control of van der Waals Epitaxial Perovskite Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37436879 DOI: 10.1021/acsami.3c05402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/14/2023]
Abstract
The advantages of van der Waals epitaxy have attracted great interest because they can meet the requirements that conventional epitaxy struggles to satisfy. The weak adatom-substrate interaction without directional covalent bonding drastically relaxes the lattice matching limitation. However, the weak adatom-substrate interaction also leads to ineffectiveness in directing the crystal growth structure, limiting it to one orientation in epitaxial growth. In this work, we propose a domain matching strategy to guide the perovskite-type crystal epitaxial growth on 2D substrates, and we have demonstrated selective deposition of highly (001)-, (110)-, and (111)-oriented epitaxial Fe4N thin films on mica substrates using applicable transition structure design. Our work makes it possible to achieve and control different orientations of van der Waals epitaxy on the same substrate.
Collapse
Affiliation(s)
- Renhong Liang
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Liwen Zhu
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China
| | - Hua Liu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Mao Ye
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Longlong Shu
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, PR China
| | - Renkui Zheng
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Shanming Ke
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| |
Collapse
|
3
|
Chang X, Li J, Mu J, Ma CH, Huang W, Zhu HF, Liu Q, Du LH, Zhong SC, Zhai ZH, Das S, Huang YL, Zhu GB, Zhu LG, Shi Q. Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO 2 film across the phase transition. OPTICS EXPRESS 2023; 31:13243-13254. [PMID: 37157465 DOI: 10.1364/oe.488947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO2) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO2 film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition. It was observed that the THz modulation depth increases under compressive strain and decreases under tensile strain. Moreover, the phase-transition threshold depends on the uniaxial strain. Particularly, the rate of the phase transition temperature depends on the uniaxial strain and reaches approximately 6 °C/% in the temperature-induced phase transition. The optical trigger threshold in laser-induced phase transition decreased by 38.9% under compressive strain but increased by 36.7% under tensile strain, compared to the initial state without uniaxial strain. These findings demonstrate the uniaxial strain-induced low-power triggered THz modulation and provide new insights for applying phase transition oxide films in THz flexible electronics.
Collapse
|
4
|
Zhong G, An F, Qu K, Dong Y, Yang Z, Dai L, Xie S, Huang R, Luo Z, Li J. Highly Flexible Freestanding BaTiO 3 -CoFe 2 O 4 Heteroepitaxial Nanostructure Self-Assembled with Room-Temperature Multiferroicity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104213. [PMID: 34816590 DOI: 10.1002/smll.202104213] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2021] [Revised: 09/28/2021] [Indexed: 06/13/2023]
Abstract
Multiferroics with simultaneous electric and magnetic orderings are highly desirable for sensing, actuation, data storage, and bio-inspired systems, yet developing flexible materials with robust multiferroic properties at room temperature is a long-term challenge. Utilizing water-soluble Sr3 Al2 O6 as a sacrificial layer, the authors have successfully self-assembled a freestanding BaTiO3 -CoFe2 O4 heteroepitaxial nanostructure via pulse laser deposition, and confirmed its epitaxial growth in both out-of-plane and in-plane directions, with highly ordered CoFe2 O4 nanopillars embedded in a single crystalline BaTiO3 matrix free of substrate constraint. The freestanding nanostructure enjoys super flexibility and mechanical integrity, not only capable of spontaneously curving into a roll, but can also be bent with a radius as small as 4.23 µm. Moreover, piezoelectricity and ferromagnetism are demonstrated at both microscopic and macroscopic scales, confirming its robust multiferroicity at room temperature. This work establishes an effective route for flexible multiferroic materials, which have the potential for various practical applications.
Collapse
Affiliation(s)
- Gaokuo Zhong
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Feng An
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Ke Qu
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Yongqi Dong
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Zhenzhong Yang
- Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai, Shanghai, 200241, China
| | - Liyufen Dai
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China
| | - Shuhong Xie
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai, Shanghai, 200241, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, China
| | - Jiangyu Li
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| |
Collapse
|
5
|
Zhang C, Ding S, Qiao K, Li J, Li Z, Yin Z, Sun J, Wang J, Zhao T, Hu F, Shen B. Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La 0.7Sr 0.3MnO 3 Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28442-28450. [PMID: 34105344 DOI: 10.1021/acsami.1c03753] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The realization of a large low-field magnetoresistance (LFMR) effect in free-standing magnetic oxide films is a crucial goal toward promoting the development of flexible, low power consumption, and nonvolatile memory devices for information storage. La0.7Sr0.3MnO3 (LSMO) is an ideal material for spintronic devices due to its excellent magnetic and electronic properties. However, it is difficult to achieve both a large LFMR effect and high flexibility in LSMO films due to the lack of research on LFMR-related mechanisms and the strict LSMO growth conditions, which require rigid substrates. Here, we induced a large LFMR effect in an LSMO/mica heterostructure by utilizing a disorder-related spin-polarized tunneling effect and developed a simple transfer method to obtain free-standing LSMO films for the first time. Electrical and magnetic characterizations of these free-standing LSMO films revealed that all of the principal properties of LSMO were sustained under compressive and tensile conditions. Notably, the magnetoresistance of the processed LSMO film reached up to 16% under an ultrasmall magnetic field (0.1 T), which is 80 times that of a traditional LSMO film. As a demonstration, a stable nonvolatile multivalue storage function in flexible LSMO films was successfully achieved. Our work may pave the way for future wearable resistive memory device applications.
Collapse
Affiliation(s)
- Cheng Zhang
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuaishuai Ding
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin 300072, People's Republic of China
| | - Kaiming Qiao
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jia Li
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhe Li
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhuo Yin
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jirong Sun
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Jing Wang
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Fujian Institute of Innovation, Chinese Academy of Sciences, Fuzhou, Fujian 350108, People's Republic of China
| | - Tongyun Zhao
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, People's Republic of China
| | - Fengxia Hu
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Baogen Shen
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, People's Republic of China
| |
Collapse
|
6
|
ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices. NANOMATERIALS 2021; 11:nano11041011. [PMID: 33920931 PMCID: PMC8071305 DOI: 10.3390/nano11041011] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2021] [Revised: 03/26/2021] [Accepted: 04/10/2021] [Indexed: 12/29/2022]
Abstract
In this work, highly conductive Al-doped ZnO (AZO) films are deposited on transparent and flexible muscovite mica substrates by using the atomic layer deposition (ALD) technique. AZO-mica structures possess high optical transmittance at visible and near-infrared spectral range and retain low electric resistivity, even after continuous bending of up to 800 cycles. Structure performances after bending tests have been supported by atomic force microscopy (AFM) analysis. Based on performed optical and electrical characterizations AZO films on mica are implemented as transparent conductive electrodes in flexible polymer dispersed liquid crystal (PDLC) devices. The measured electro-optical characteristics and response time of the proposed devices reveal the higher potential of AZO-mica for future ITO-free flexible optoelectronic applications.
Collapse
|
7
|
Amrillah T, Quynh LT, Nguyen Van C, Do TH, Arenholz E, Juang JY, Chu YH. Flexible Epsilon Iron Oxide Thin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:17006-17012. [PMID: 33784086 DOI: 10.1021/acsami.0c23104] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metastable ε-Fe2O3 is a unique phase of iron oxide, which exhibits a giant coercivity field. In this work, we grew epitaxial ε-Fe2O3 films on flexible two-dimensional muscovite substrates via quasi van der Waals epitaxy. It turns out that twinning and interface energies have been playing essential roles in stabilizing metastable ε-Fe2O3 on mica substrates. Moreover, the weak interfacial bonding between ε-Fe2O3 and mica is expected to relieve the substrate clamping effect ubiquitously encountered in films epitaxially grown on rigid substrates, such as SrTiO3. It is anticipated that these flexible ε-Fe2O3 thin films can serve as a platform for exploring possible interesting emergent physical properties and eventually be integrated as flexible functional devices.
Collapse
Affiliation(s)
- Tahta Amrillah
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Nanotechnology, Faculty of Advanced Technology and Multidiscipline, Universitas Airlangga, Surabaya 60115, Indonesia
| | - Le Thi Quynh
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Physics, National Tsinghua University, Hsinchu 30013, Taiwan
| | - Chien Nguyen Van
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
- Institute of Materials Sciences, Vietnam Academy of Science and Technology, Hanoi 10000, Vietnam
| | - Thi Hien Do
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Elke Arenholz
- Advanced Light Source, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Jenh-Yih Juang
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ying-Hao Chu
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| |
Collapse
|
8
|
Bao H, Wu Y, Liu J, Hua X, Lai G, Yang X. Polyester-Polysiloxane Hyperbranched Block Polymers for Transparent Flexible Materials. ACS OMEGA 2020; 5:29513-29519. [PMID: 33225182 PMCID: PMC7675931 DOI: 10.1021/acsomega.0c04460] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Accepted: 10/20/2020] [Indexed: 06/11/2023]
Abstract
Highly transparent flexible silicone elastomers are useful for certain stretchable electronics and various types of smart devices. Polyester-polysiloxane hyperbranched block copolymers are synthesized by ring-opening polymerization of octamethylcyclotetrasiloxane initiated by macromolecular lithium alkoxide. Treatment of these copolymers with tetraethoxysilane and dibutylin dilaurate at room temperature gives the corresponding transparent elastic materials. The transparency of the materials can reach 90% (700-800 nm), and the starting thermal decomposition temperatures of the materials are higher than 330 °C. Very interestingly, though the highest tensile strength of the material prepared is about 0.48 MPa, the elongation at break can reach 778-815%. The results will inspire us to develop highly transparent flexible silicone materials by designing copolymers of silicone materials and hyperbranched polymers.
Collapse
Affiliation(s)
- Haoyuan Bao
- Key Laboratory of Organosilicon
Chemistry and Material Technology of Education Ministry, College of
Material, Chemistry, and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| | - Yufei Wu
- Key Laboratory of Organosilicon
Chemistry and Material Technology of Education Ministry, College of
Material, Chemistry, and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| | - Jiangling Liu
- Key Laboratory of Organosilicon
Chemistry and Material Technology of Education Ministry, College of
Material, Chemistry, and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| | - Xilin Hua
- Key Laboratory of Organosilicon
Chemistry and Material Technology of Education Ministry, College of
Material, Chemistry, and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| | - Guoqiao Lai
- Key Laboratory of Organosilicon
Chemistry and Material Technology of Education Ministry, College of
Material, Chemistry, and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| | - Xiongfa Yang
- Key Laboratory of Organosilicon
Chemistry and Material Technology of Education Ministry, College of
Material, Chemistry, and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, China
| |
Collapse
|