Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La0.7Sr0.3MnO3 Films

A study on the kinetic arrest of magnetic phases in nanostructured Nd0.6Sr0.4MnO3thin films

The Nd0.6Sr0.4MnO3(NSMO) manganite system exhibits a phase transition from paramagnetic insulating (PMI) to ferromagnetic metallic (FMM) state around its Curie temperatureTC= 270 K (bulk). The morphology-driven changes in the kinetically arrested magnetic phases in NSMO thin films with granular and crossed-nano-rod-type morphology are studied. The manganite thin films at low temperatures possess a magnetic glassy state arising from the coexistence of the high-temperature PMI and the low-temperature FMM phases. The extent of kinetic arrest and its relaxation was studied using the 'cooling and heating in unequal field (CHUF)' protocol in magnetic and magnetotransport investigations. The sample with rod morphology showed a large extent of phase coexistence compared to the granular sample. Further, with a field-cooling protocol, time-evolution studies were carried out to understand the relaxation of arrested magnetic phases across these morphologically distinct thin films. The results on the devitrification of the arrested magnetic state are interpreted from the point of view of homogeneous and heterogeneous nucleation of the ferromagnetic phase in the paramagnetic matrix with respect to temperature.

Electronic and Structural Disorder of the Epitaxial La0.67Sr0.33MnO3 Surface

Understanding and tuning epitaxial complex oxide films are crucial in controlling the behavior of devices and catalytic processes. Substrate-induced strain, doping, and layer growth are known to influence the electronic and magnetic properties of the bulk of the film. In this study, we demonstrate a clear distinction between the bulk and surface of thin films of La0.67Sr0.33MnO3 in terms of chemical composition, electronic disorder, and surface morphology. We use a combined experimental approach of X-ray-based characterization methods and scanning probe microscopy. Using X-ray diffraction and resonant X-ray reflectivity, we uncover surface nonstoichiometry in the strontium and lanthanum alongside an accumulation of oxygen vacancies. With scanning tunneling microscopy, we observed an electronic phase separation (EPS) on the surface related to this nonstoichiometry. The EPS is likely driving the temperature-dependent resistivity transition and is a cause of proposed mixed-phase ferromagnetic and paramagnetic states near room temperature in these thin films.

Recent Progress of Organic Semiconductor Materials in Spintronics

Spintronics, a new discipline focusing on the spin-dependent transport process of electrons, has been developing rapidly. Spin valves are the most significant carriers of spintronics utilizing the spin freedom of electrons. It is expected to pierce "Moore's Law" and become the core component in processors of the next generation. Organic semiconductors advance in their adjustable band gap, weak spin-orbit coupling and hyperfine interaction, excellent film-forming property, having enormous promise for spin valves. Here, the principle of spin valves is introduced, and the history and progress in organic spin injection and transport materials are summarized. Then we analyze the influence of spinterface on device performance and introduce reliable methods of constructing organic spin valves. Finally, the challenges for spin valves are discussed, and the future is proposed. We aim to draw the attention of researchers to organic spin valves and promote further research in spintronics through this paper.

Bending Modulated Ultralarge Magnetoresistance in Flexible La0.67Ba0.33MnO3 Thin Film Based Device

Magnetoresistance based information devices have attracted much attention due to the ability to utilize spins as information carriers. To promote the magnetoresistance-based devices, ultrahigh magnetoresistance ratios are highly desirable for magnetic sensing, memory, and artificial intelligent devices, etc. However, today the magnetoresistance devices are facing the challenge of limited magnetoresistance ratio, low work temperature, or high magnetic field, which calls for proper theories and mechanisms. To address it, we first introduce the flexible bending-controlled magnetoresistance device based on the La_0.67Ba_0.33MnO₃ film. Due to the anisotropic resistance of the La_0.67Ba_0.33MnO₃ film and the nonlinear amplification effect of the Zener diode, the device has exhibited strong magnetoresistive performance (∼8725% at 1 T, 300 K). Combining the assist from mechanical bending and diode, high magnetic field sensitivity with large magnetoresistance ratio (∼1.7 × 10⁴% at 1 T, 300 K) and low work current (∼0.15 mA) is simultaneously achieved at room temperature, which is over 10⁴ times larger than that of the planar La_0.67Ba_0.33MnO₃ film. Based on the above results, we propose one but not the only possible application as tunable multistage switch. Our findings may pave a strategy to develop flexible diode-enhanced magnetoresistance device with ultrahigh magnetoresistance ratios and bending tunable performances.