Asymmetric carrier transport and weak localization in few layer graphene grown directly on a dielectric substrate

Pulsed-Mode Metalorganic Vapor-Phase Epitaxy of GaN on Graphene-Coated c-Sapphire for Freestanding GaN Thin Films

We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off by using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices.

In Situ Growth of Graphene on Polyimide for High-Responsivity Flexible PbS-Graphene Photodetectors

Graphene is an ideal material for flexible optoelectronic devices due to its excellent electrical and optical properties. However, the extremely high growth temperature of graphene has greatly limited the direct fabrication of graphene-based devices on flexible substrates. Here, we have realized in situ growth of graphene on a flexible polyimide substrate. Based on the multi-temperature-zone chemical vapor deposition cooperated with bonding a Cu-foil catalyst onto the substrate, the growth temperature of graphene was controlled at only 300 °C, enabling the structural stability of polyimide during growth. Thus, large-area high-quality monolayer graphene film was successfully in situ grown on polyimide. Furthermore, a PbS-graphene flexible photodetector was fabricated using the graphene. The responsivity of the device reached 10⁵ A/W with 792 nm laser illumination. The in-situ growth ensures good contact between graphene and substrate; therefore, the device performance can remain stable after multiple bending. Our results provide a highly reliable and mass-producible path for graphene-based flexible devices.

In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 °C for Wafer-Scale Optoelectronic Device Application

The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V₂ O₅ ) is found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V₂ O₅ film. Density functional theory is used to quantitatively analyze the catalytic effect of V₂ O₅ . Due to the high resistance property of V₂ O₅ at room temperature, the obtained graphene can be directly used in devices with V₂ O₅ as an intercalation layer. A wafer-scale graphene-V₂ O₅ -Si (GVS) Schottky photodetector array is successfully fabricated. When illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA W^-1 at 0 V bias and 420 mA W^-1 at 2 V. The transfer-free device fabrication process enables high feasibility for industrialization.