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For: Wang JJ, Zhao YF, Zheng JD, Wang XT, Deng X, Guan Z, Ma RR, Zhong N, Yue FY, Wei ZM, Xiang PH, Duan CG. Strain-engineering on GeSe: Raman spectroscopy study. Phys Chem Chem Phys 2021;23:26997-27004. [PMID: 34842874 DOI: 10.1039/d1cp03721h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
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1
Dewan S, Khanikar PD, Mudgal R, Singh A, Muduli PK, Singh R, Das S. Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37216628 DOI: 10.1021/acsami.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
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