Effects of oxygen vacancies on the photoexcited carrier lifetime in rutile TiO2

Changeable Active Sites by Pr Doping CuSA-TiO2 Photocatalyst for Excellent Hydrogen Production

Photocatalytic water splitting for clean hydrogen production has been a very attractive research field for decades. However, the insightful understanding of the actual active sites and their impact on catalytic performance is still ambiguous. Herein, a Pr-doped TiO2-supported Cu single atom (SA) photocatalyst is successfully synthesized (noted as Cu/Pr-TiO2). It is found that Pr dopants passivate the formation of oxygen vacancies, promoting the density of photogenerated electrons on the CuSAs, and optimizing the electronic structure and H* adsorption behavior on the CuSA active sites. The photocatalytic hydrogen evolution rate of the obtained Cu/Pr-TiO2 catalyst reaches 32.88 mmol g-1 h-1, 2.3 times higher than the Cu/TiO2. Innovatively, the excellent catalytic activity and performance is attributed to the active sites change from O atoms to CuSAs after Pr doping is found. This work provides new insight for understanding the accurate roles of single atoms in photocatalytic water splitting.

Estimating Nonradiative Excited-State Lifetimes in Photoactive Semiconducting Nanostructures

The time evolution of the exciton generated by light adsorption in a photocatalyst is an important feature that can be approached from full nonadiabatic molecular dynamics simulations. Here, a crucial parameter is the nonradiative recombination rate between the hole and the electron that form the exciton. In the present work, we explore the performance of a Fermi's golden rule-based approach on predicting the recombination rate in a set of photoactive titania nanostructures, relying solely on the coupling of the ground and first excited state. In this scheme the analysis of the first excited state is carried out by invoking Kasha's rule thus avoiding computationally expensive nonadiabatic molecular dynamics simulations and resulting in an affordable estimate of the recombination rate. Our results show that, compared to previous ones from nonadiabatic molecular dynamics simulations, semiquantitative recombination rates can be predicted for the smaller titania nanostructures, and qualitative values are obtained from the larger ones. The present scheme is expected to be useful in the field of computational heterogeneous photocatalysis whenever a complex and computationally expensive full nonadiabatic molecular dynamics cannot be carried out.

Mechanism of p-Type Heteroatom Doping of Lithium Stannate for the Photodegradation of 2,4-Dichlorophenol: Enhanced Hole Oxidative Capability and Concentrations

A systematic evaluation of enhancing photocatalysis via aliovalent cation doping is conducted. Cation In3+, being p-type-doped, was chosen to substitute the Sn site (Sn4+) in Li2SnO3, and the photodegradation of 2,4-dichlorophenol was applied as a model reaction. Specifically, Li2Sn0.90In0.10O3 exhibited superior catalytic performance; the photodegradation efficiency reached about 100% within only 12 min. This efficiency is far greater than that of pure Li2SnO3 under identical conditions. Density functional theory calculations reveal that introducing In3+ increased the electron mobility, yet decreased the hole mobility, leading to photogenerated carrier separation. However, photoluminescence and time-resolved photoluminescence suggest that In3+ induced nonradiative coupling in the matrix, reducing the photogenerated carrier separation ratio compared with that of Li2SnO3. The optical band gap of Li2Sn0.90In0.10O3 was almost unchanged compared with that of Li2SnO3 via ultraviolet-visible absorption. The increased photocatalytic efficiency was ascribed to the lower valence band position and enhanced hole concentrations by valence band X-ray photoelectron spectroscopy and electrochemical measurements. Finally, a 2,4-dichlorophenol degradation pathway, an intermediate toxicity assessment, and a photocatalytic mechanism were proposed. This work offers insights into designing and optimizing semiconductor photocatalysts with high performance.

Spin singlet pairing of bismuth in titania

The formation of electron and hole traps in semiconductors via atomistic defects is the fundamental microscopic mechanism for tuning the electronic and photonic properties of these materials. Here we find in experiments that bismuth atoms doped into anatase TiO2 as substituents can appear as paired diatomic defects. Through first-principles density functional theory calculations, we reveal that the observed bismuth pair is separated by a medium distance of 6.37 Å through a delicate balance of Pauli repulsion and effective attractive interaction. We further clarify that the effective attractive interaction is related to the exchange coupling between the two bismuth defect states, which also leads to the formation of a spin singlet electronic state of the two unpaired electrons. Our study brings up a new type of defect state in TiO2, and motivates further experimental and theoretical studies of multi-electronic states in materials.

Anomalous Dependence of Photocarrier Recombination Time on the Polaron Density of TiO2(110)

Polarons play a crucial role in energy conversion, but the microscopic mechanism remains unclear since they are susceptible to local atomic structures. Here, by employing ab initio nonadiabatic dynamic simulations, we investigate electron-hole (e-h) nonradiative recombination at the rutile TiO2(110) surface with varied amounts of oxygen vacancies (Vo). The isolated Vo facilitates e-h recombination through forming polarons compared to that in the defect-free surface. However, aggregated Vo forming clusters induce an order-of-magnitude acceleration of polaron diffusion by enhancing phonon excitations, which blocks the defect-mediated recombination and thus prolongs the photocarrier lifetime. We find that photoelectrons are driven to migrate toward the top surface due to polaron formation. Our results show the many-body effects of defects and polaron effects on determining the overall recombination rate, which has been ignored in the Shockley-Read-Hall model. The findings explain the controversial experimental observations and suggest that engineering Vo aggregation would instead improve photocatalysis efficiencies in polaronic materials.

Ab Initio Time-Domain Study of Charge Relaxation and Recombination in N-Doped Cu2O

Cu2O is a good photoelectric material with excellent performance, and its crystal structure, electronic structure, and optical properties have been extensively studied. To further illustrate the charge distribution and the carrier transport in this system, the e-h recombination dynamics was studied. It is found that N doping induced a shallower impurity band above the VBM, leading to significant charge localization around the impurity atom. NAMD simulation reveals that the N doping system possesses a longer e-h nonradiative recombination time scale. Therefore, we demonstrate that the formation of the impurity band and charge localization play an essential role in suppressing e-h recombination in N doping systems. This work is conducive for understanding the carrier transport mechanism in N-doped Cu2O.