Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: α-MnSe

The Multiferroic, Magnetic Exchange Bias Effect, and Photodetection Multifunction Characteristics in MnSe/Ga0.6Fe1.4O3 Heterostructure

Artificial heterostructures are typically created by layering distinct materials, thereby giving rise to unique characteristics different from their individual components. Herein, two-dimensional α-MnSe nanosheets with a non-layered structure were fabricated on Ga0.6Fe1.4O3 (GFO) films. The superior crystalline properties of MnSe/GFO heterostructures were confirmed through structural and morphological analyses. The remanent polarization is around 1.5 μC/cm2 and the leakage current density can reach 2 × 10-3 A/cm2 under 4 V. In addition, the piezo-response force microscopy amplitude and phase images further supported the ferroelectric property. The significant improvement of coercive field and saturated magnetization, along with the antiparallel signals of Mn and Fe ions observed through synchrotron X-ray analyses, suggest the presence of magnetic interaction within the MnSe/GFO heterostructure. Finally, the excellent photodetector with a photo detectivity of 6.3 × 108 Jones and a photoresponsivity of 2.8 × 10-3 A·W-1 was obtained under 532 nm in the MnSe/GFO heterostructure. The characteristics of this heterostructure, which include multiferroic, magnetic exchange bias effect, and photodetection capabilities, are highly beneficial for multifunctional devices.

Magnetic exchange coupling and photodetection multifunction characteristics of an MnSe/LaMnO3 heterostructure

Artificial heterostructures are often realized by stacking different materials to present new emerging properties that are not exhibited by their individual constituents. In this work, non-layered two-dimensional α-MnSe nanosheets were transferred onto LaMnO3 (LMO) films to obtain a multifunctional heterostructure. The high crystal quality of the MnSe/LMO heterostructure was revealed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy measurements. The enhancement of the saturated magnetization and coercive field and synchrotron X-ray measurements indicated the magnetic exchange coupling effect present in this MnSe/LMO heterostructure. The exchange bias field and coercive field reached 400 Oe and 1013 Oe under a positive 5k Oe field-cooling process. Thus, an outstanding photodetector with photoresponsivity of 4.1 × 10-4 A W-1 and photo detectivity of 2.6 × 108 jones was obtained with a luminescence of 532 nm for this MnSe/LMO heterostructure. The multifunction characteristics of magnetic exchange coupling and photodetection in this heterostructure are very useful for next-generation devices.

Polarized Raman spectroscopy study of CVD-grown Cr2S3 flakes: unambiguous identification of phonon modes

We report a systematic Raman spectroscopy investigation of chemical vapor deposited 2D nonlayered Cr2S3, with both linearly and circularly polarized light over a wide temperature range (5-300 K). Temperature-dependent Raman spectra exhibit a good linear relationship between the peak positions of the phonon modes and temperature. Angle-resolved polarized Raman spectra reveal the polarization-dependent optical response of in-plane and out-of-plane phonon modes. Helicity-dependent Raman investigations complete definite assignment of all the phonon modes observed in the Raman spectra of 2D nonlayered Cr2S3 by the optical selection rule based on a Raman tensor. Our work realizes clear phonon mode identification over a wide temperature range for the emerging material 2D Cr2S3, an important representative of nonlayered 2D system with unique properties for optoelectronic and spintronic applications.

Rational Design of Quasi-1D Multicore-Shell MnSe@N-Doped Carbon Nanorods as High-Performance Anode Material for Sodium-Ion Batteries

Sodium-ion batteries (SIBs) are considered one of the promising candidates for energy storage devices due to the low cost and low redox potential of sodium. However, their implementation is hindered by sluggish kinetics and rapid capacity decay caused by inferior conductivity, lattice deterioration, and volume changes of conversion-type anode materials. Herein, we report the design of a multicore-shell anode material based on manganese selenide (MnSe) nanoparticle encapsulated N-doped carbon (MnSe@NC) nanorods. Benefiting from the conductive multicore-shell structure, the MnSe@NC anodes displayed prominent rate capability (152.7 mA h g-1 at 5 A g-1) and long lifespan (132.7 mA h g-1 after 2000 cycles at 5 A g-1), verifying the essence of reasonable anode construction for high-performance SIBs. Systematic in situ microscopic and spectroscopic methods revealed a highly reversible conversion reaction mechanism of MnSe@NC. Our study proposes a promising route toward developing advanced transition metal selenide anodes and comprehending electrochemical reaction mechanisms toward high-performance SIBs.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Wurtzite vs. rock-salt MnSe epitaxy: electronic and altermagnetic properties

Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from specific symmetry operation that connects the spin sublattices. In this report, we show with ab initio calculations that semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such a space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.

Orietation-controlled synthesis and Raman study of 2D SnTe

Tin telluride (SnTe), as a narrow bandgap semiconductor material, has great potential for developing photodetectors with wide spectra and ultra-fast response. At the same time, it is also an important topological crystal insulator material, with different topological surface states on several common surfaces. Here, we introduce different Sn sources and control the growth of regular SnTe nanosheets along the (100) and (111) planes through the atmospheric pressure chemical vapor deposition method. It has been proven through various characterizations that the synthesized SnTe is a high-quality single crystal. In addition, the angular resolved Raman spectra of SnTe nanosheets grown on different crystal planes are first demonstrated. The experimental results showed that square SnTe nanosheets grown along the (100) plane exhibit in-plane anisotropy. At the same time, we use micro-nanofabrication technology to manufacture SnTe-based field effect transistors and photodetectors to explore their electrical and optoelectronic properties. It has been confirmed that transistors based on grown SnTe nanosheets exhibit p-type semiconductor characteristics and have a high response to infrared light. This work provides a new approach for the controllable synthesis of SnTe and adds new content to the research of SnTe-based infrared detectors.

Flexible Electronic Systems via Electrohydrodynamic Jet Printing: A MnSe@rGO Cathode for Aqueous Zinc-Ion Batteries

Aqueous zinc-ion batteries (ZIBs) are promising candidates to power flexible integrated functional systems because they are safe and environmentally friendly. Among the numerous cathode materials proposed, Mn-based compounds, particularly MnO₂, have attracted special attention because of their high energy density, nontoxicity, and low cost. However, the cathode materials reported so far are characterized by sluggish Zn²⁺ storage kinetics and moderate stabilities. Herein, a ZIB cathode based on reduced graphene oxide (rGO)-coated MnSe nanoparticles (MnSe@rGO) is proposed. After MnSe was activated to α-MnO₂, the ZIB exhibits a specific capacity of up to 290 mAh g^-1. The mechanism underlying the improvement in the electrochemical performance of the MnSe@rGO based electrode is investigated using a series of electrochemical tests and first-principles calculations. Additionally, in situ Raman spectroscopy is used to track the phase transition of the MnSe@rGO cathodes during the initial activation, proving the structural evolution from the LO to MO₆ mode. Because of the high mechanical stability of MnSe@rGO, flexible miniaturized energy storage devices can be successfully printed using a high-precision electrohydrodynamic (EHD) jet printer and integrated with a touch-controlled light-emitting diode array system, demonstrating the application of flexible EHD jet-printed microbatteries.

Controllable CVD Growth of 2D Cr5Te8 Nanosheets with Thickness-Dependent Magnetic Domains

As a unique 2D magnetic material with self-intercalated structure, Cr₅Te₈ exhibits many intriguing magnetic properties. While its ferromagnetism of Cr₅Te₈ has been previously reported, the research on its magnetic domain remains unexplored. Herein, we have successfully fabricated 2D Cr₅Te₈ nanosheets with controlled thickness and lateral size by chemical vapor deposition (CVD). Then magnetic property measurement system revealed Cr₅Te₈ nanosheets exhibiting intense out-of-plane ferromagnetism with a Curie temperature (T_C) of 176 K. Significantly, we reported for the first time two magnetic domains: magnetic bubbles and thickness-dependent maze-like magnetic domains in our Cr₅Te₈ nanosheets by cryogenic magnetic force microscopy (MFM). The domain width of the maze-like magnetic domains increases rapidly with decreasing sample thickness; meanwhile, the domain contrast decreases. This indicates the dominant role of ferromagnetism shifts from dipolar interactions to magnetic anisotropy. Our research not only establishes a pathway for the controllable growth of 2D magnetic materials but also points toward novel avenues for regulating magnetic phases and methodically tuning domain characteristics.

P-Type 2D Semiconductors for Future Electronics

2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.

Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe

Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN  ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.