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Kim YB, Jeong JH, Park MH, Yun JM, Ma JH, Ha HJ, Kang SJ, Kang SJ. Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure. MATERIALS (BASEL, SWITZERLAND) 2024; 17:677. [PMID: 38591507 PMCID: PMC10856061 DOI: 10.3390/ma17030677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 01/24/2024] [Accepted: 01/29/2024] [Indexed: 04/10/2024]
Abstract
In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on-off switching behavior in the front channel of our oxide-oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 107 and 89.1 AW-1, respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility (μsat) and current on/off ratio (Ion/Ioff), were highly enhanced compared to the IGZO transistor. The μsat and Ion/Ioff were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide-oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human-machine interfaces.
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Affiliation(s)
- Yu Bin Kim
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
| | - Jun Hyung Jeong
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Min Ho Park
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Jung Min Yun
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
| | - Jin Hyun Ma
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Hyoun Ji Ha
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Seong Jae Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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Shin H, Kim D, Park J, Kim DY. Improving Photosensitivity and Transparency in Organic Phototransistor with Blending Insulating Polymers. MICROMACHINES 2023; 14:620. [PMID: 36985027 PMCID: PMC10056034 DOI: 10.3390/mi14030620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 03/03/2023] [Accepted: 03/06/2023] [Indexed: 06/18/2023]
Abstract
Organic phototransistors exhibit great promise for use in a wide range of technological applications due to their flexibility, low cost, and low-temperature processability. However, their low transparency due to visible light absorption has hindered their adoption in next-generation transparent electronics. For this reason, the present study sought to develop a highly sensitive organic phototransistor with greater transparency and significantly higher light sensitivity in the visible and UVA regions without deterioration in its electrical properties. An organic blended thin-film transistor (TFT) fabricated from the blend of an organic semiconductor and an insulating polymer demonstrated improved electrical properties in the dark and a higher current under light irradiation even though its transmittance was higher. The device exhibited a transmittance of 87.28% and a photosensitivity of 7049.96 in the visible light region that were 4.37% and 980 times higher than those of the single-semiconductor-based device. The carrier mobility of the device blended with the insulating polymer was improved and greatly amplified under light irradiation. It is believed that the insulating polymer facilitated the crystallization of the organic semiconductor, thus promoting the flow of photogenerated excitons and improving the photocurrent. Overall, the proposed TFT offers excellent low-temperature processability and has the potential to be employed in a range of transparent electronic applications.
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Affiliation(s)
- Hyunji Shin
- Department of ICT-Future Vehicle Convergence Education & Research Center, Inha University, Incheon 22212, Republic of Korea
- Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
- Center for Sensor Systems, Inha University, Incheon 22212, Republic of Korea
| | - Dongwook Kim
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Republic of Korea
| | - Jaehoon Park
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Republic of Korea
| | - Dae Yu Kim
- Department of ICT-Future Vehicle Convergence Education & Research Center, Inha University, Incheon 22212, Republic of Korea
- Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
- Center for Sensor Systems, Inha University, Incheon 22212, Republic of Korea
- Inha Research Institute for Aerospace Medicine, Inha University, Incheon 22212, Republic of Korea
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