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Li YY, Li KY, Chen SH, Ma N, Song ZY, Yang M, Wang J, Liu WQ. Phosphorus-doped synergy of phase change in heterogeneous catalysts of NiS-NiS 2 for efficient electrocatalysis of Pb(II). Anal Chim Acta 2024; 1288:342149. [PMID: 38220283 DOI: 10.1016/j.aca.2023.342149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/16/2023] [Accepted: 12/15/2023] [Indexed: 01/16/2024]
Abstract
A fundamental understanding of the electroanalytical activity of transition metal sulfide electrocatalysts, especially the origin of the electrocatalytic reactivity on the surface sites of heterostructures with multiple crystalline phases, is essential for the design of low-cost and highly efficient nonprecious metal electrocatalysts for further scientific and technological achievements. Herein, we injected P into NiS and occupied the S sites through a doping strategy. The redistributed electronic structure induced the construction of heterostructures, which significantly improved the structure and chemical state of electrochemically inert NiS. The phase-change mechanism between NiS and NiS2 synergistically catalyzes Pb(II), while the P and S sites jointly lose electrons. Moreover, the constructed heterojunction sensor shows the a sensitivity of 83.43 μA μM-1 to Pb(II) with a theoretical limit of detection of 48 nM, as well as excellent stability, reproducibility, and anti-interference ability. The accurate detection in real water further reveals the potential of this sensor for practical applications. This study provides a guiding strategy for improving electrochemically inert materials to design highly active electrocatalytic interfaces, which has important implications for the development of highly efficient electrode-sensitive materials similar to precious metals to achieve accurate electrical analysis.
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Affiliation(s)
- Yong-Yu Li
- School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, PR China; Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, PR China
| | - Kai-Yuan Li
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, PR China; College of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu, 241000, PR China
| | - Shi-Hua Chen
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, PR China
| | - Na Ma
- Institute of Environment, Hefei Comprehensive National Science Center, Hefei, 230088, PR China
| | - Zong-Yin Song
- Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, PR China.
| | - Meng Yang
- Institute of Environment, Hefei Comprehensive National Science Center, Hefei, 230088, PR China; Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, PR China.
| | - Jie Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, PR China; Institute of Environment, Hefei Comprehensive National Science Center, Hefei, 230088, PR China.
| | - Wen-Qing Liu
- School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, PR China; Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, PR China; Institute of Environment, Hefei Comprehensive National Science Center, Hefei, 230088, PR China.
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Desai T, Goud RSP, Dongale TD, Gurnani C. Evaluation of Nanostructured NiS 2 Thin Films from a Single-Source Precursor for Flexible Memristive Devices. ACS OMEGA 2023; 8:48873-48883. [PMID: 38162788 PMCID: PMC10753740 DOI: 10.1021/acsomega.3c06331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 10/18/2023] [Accepted: 11/08/2023] [Indexed: 01/03/2024]
Abstract
Herein, we report the first demonstration of a single-step, in situ growth of NiS2 nanostructures from a single-source precursor onto a flexible substrate as a versatile platform for an effective nonvolatile memristor. The low temperature, solution-processed deposition of NiS2 thin films exhibits a wide band gap range, spherical-flower-like morphology with high surface area and porosity, and negligible surface roughness. Moreover, the fabricated Au/NiS2/ITO/PET memristor device reveals reproducible bipolar resistive switching (RS) at low operational voltages under both flat and bending conditions. The flexible device shows stable RS behavior for multiple cycles with a good memory window (∼102) and data retention of up to 104 s. The switching of a device between a high-resistance state and a low-resistance state is attributed to the filamentary conduction based on sulfur ion migration and sulfur vacancies and plays a key role in the outstanding memristive performance of the device. Consequently, this work provides a simple, scalable, solution-processed route to fabricate a flexible device with potential applications in next-generation neuromorphic computing and wearable electronics.
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Affiliation(s)
- Trishala
R. Desai
- Department
of Chemistry, Ecole Centrale School of Engineering, Mahindra University, Hyderabad 500043, India
| | - R. Sai Prasad Goud
- Centre
for Advanced Studies in Electronic Sciences and Technology, University of Hyderabad, Hyderabad 500046, India
| | - Tukaram D. Dongale
- Computational
Electronics and Nanoscience Research Laboratory, School of Nanoscience
and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Chitra Gurnani
- Department
of Chemistry, Ecole Centrale School of Engineering, Mahindra University, Hyderabad 500043, India
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Younus J, Shahzad W, Ismail B, Fazal T, Shah M, Iqbal S, Jawhari AH, Awwad NS, Ibrahium HA. Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications. RSC Adv 2023; 13:27415-27422. [PMID: 37711371 PMCID: PMC10498150 DOI: 10.1039/d3ra04011a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Accepted: 08/25/2023] [Indexed: 09/16/2023] Open
Abstract
Thin films of binary nickel sulphide (NiS) and zinc-doped ternary nickel sulphides (Ni1-xZnxS, where x = 0-1) were effectively produced by the chemical bath deposition method, and their potential use in photovoltaics were investigated. Dopant inclusion did not change the crystal structure of NiS, according to the structural analysis of the synthesized samples. They are appropriate for solar cell applications since the morphological study verified the crack-free deposition. Optical research revealed that the deposited thin films had refractive index (n) ranges between 1.25 and 3.0, extinction coefficient (k) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.
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Affiliation(s)
- Junaid Younus
- Department of Chemistry, COMSATS University Islamabad (CUI), Abbottabad Campus 22060 Pakistan
| | - Warda Shahzad
- Department of Chemistry, COMSATS University Islamabad (CUI), Abbottabad Campus 22060 Pakistan
| | - Bushra Ismail
- Department of Chemistry, COMSATS University Islamabad (CUI), Abbottabad Campus 22060 Pakistan
| | - Tanzeela Fazal
- Department of Chemistry, Abbottabad University of Science and Technology (AUST) Abbottabad Pakistan
| | - Mazloom Shah
- Department of Chemistry, Faculty of Science, Grand Asian University Sialkot Pakistan
| | - Shahid Iqbal
- Department of Chemistry, School of Natural Sciences (SNS), National University of Science and Technology (NUST) H-12 Islamabad 46000 Pakistan
| | - Ahmed Hussain Jawhari
- Department of Chemistry, Faculty of Science, Jazan University P.O. Box 2097 Jazan 45142 Saudi Arabia
| | - Nasser S Awwad
- Chemistry Department, Faculty of Science, King Khalid University P.O. Box 9004 Abha 61413 Saudi Arabia
| | - Hala A Ibrahium
- Biology Department, Faculty of Science, King Khalid University P.O. Box 9004 Abha 61413 Saudi Arabia
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Ali M, Mir S, Ahmed S. Non-enzymatic amperometric glucose sensing on CuO/mesoporous TiO 2 modified glassy carbon electrode. RSC Adv 2023; 13:26275-26286. [PMID: 37671002 PMCID: PMC10475982 DOI: 10.1039/d3ra04787c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 08/28/2023] [Indexed: 09/07/2023] Open
Abstract
The present study illustrates the fabrication of a glucose sensing electrode based upon binary composite of copper oxide and mesoporous titanium dioxide on glassy carbon (CuO/TiO2/GCE). The X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis evidently showed the phase pure monoclinic CuO nanoparticles and anatase TiO2. N2 adsorption-desorption analysis verified the mesoporosity in TiO2 with specific surface area greater than 105 m2 g-1. Electrochemical impedance spectroscopic analysis proved the remarkable decrease in the charge transfer resistance and facilitation of electron transfer process on the fabricated electrode. The optimum weight ratio of CuO to TiO2 was 1 : 1, and the optimum potential was 0.6 V vs. saturated calomel electrode. The chronoamperometric measurements displayed a detection limit of 1.9 μM, and sensitivities of 186.67 μA mM-1 cm-2 and 90.53 μA mM-1 cm-2 in two linear ranges of 0.05 to 5.2 mM and 5.2 to 20 mM, respectively. The amperometric analysis further showed good reproducibility, high specificity and outstanding stability of the modified electrode.
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Affiliation(s)
- Muhammad Ali
- Department of Chemistry, Quaid-i-Azam University 45320 Islamabad Pakistan +92-51-90642241 +92-51-90642145
| | - Sadullah Mir
- Department of Chemistry, COMSATS University, Islamabad Campus Pakistan
| | - Safeer Ahmed
- Department of Chemistry, Quaid-i-Azam University 45320 Islamabad Pakistan +92-51-90642241 +92-51-90642145
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