Electrochemical and optical characterization of p- and n-doped poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]

Understanding of the Intrinsic Difference between n- and p-Doping Propagation in Polymer Light-Emitting Electrochemical Cells: A Numerical Modeling Approach

Distinct doping propagation characteristics between p-doping and n-doping in light-emitting electrochemical cells (LECs) have been highlighted by intensive reports. Typically, there are significant differences in the doping speeds between p-doping and n-doping, with the former exhibiting a sawtooth frontier and the latter displaying a more uniform frontier profile. In addition, experimental observations demonstrate a uniform motion instead of the theoretically suggested accelerated electrochemical doping frontier propagation. Therefore, there is an urgent need to establish a quantitative model that delves into the underlying mechanisms responsible for doping propagation in LECs. In this study, four variables were selected to investigate the detailed mechanism of electrochemical doping propagation: temperature, voltage, and concentrations of salt and solid electrolyte. Fluorescence imaging revealed that the n-doping and p-doping propagations behaved contrarily with increasing temperature and voltage. By numerically fitting the doping propagation frontier, equations were derived to describe the relationship between the speed of electrochemical doping propagation and temperature/voltage. The underlying mechanisms were elucidated, indicating that anions undergo motion through the cooperative effects of electric field drift and concentration diffusion, while cation transport strongly relies on poly(ethylene oxide) (PEO) segmental motions. In other words, the movement of anions within the electrolyte is characterized by a greater degree of freedom, whereas the motion of cations is significantly dependent on the segmental motions of PEO. The resulting equations were well-fitted with experimental data, providing a solid foundation for further theoretical investigations into electrochemical doping in various devices.

Dynamic Bipolar Electrode Array for Visualized Screening of Electrode Materials in Light-Emitting Electrochemical Cells

Charge injection at a metal/semiconductor interface is of paramount importance for many chemical and physical processes. The dual injection of electrons and holes, for example, is necessary for electroluminescence in organic light-emitting devices. In an electrochemical cell, charge transfer across the electrode interface is responsible for redox reactions and Faradic current flow. In this work, we use polymer light-emitting electrochemical cells (PLECs) to visually assess the ability of metals to inject electronic charges into a luminescent polymer. Silver, aluminum, and gold microdisks are deposited between the two driving electrodes of the PLEC in the form of a horizontal array. When the PLEC is polarized, the individual disks functioned as bipolar electrodes (BPEs) to induce redox p- and n-doping reactions at their extremities, which are visualized as strongly photoluminescence-quenched growth in the luminescent polymer. The three metals initially generate highly distinct doping patterns that are consistent with differences in their work function. Over time, the doped regions continue to grow in size. Quantitative analysis of the n/p area ratio reveals an amazing convergence to a single value for all 39 BPEs, regardless of their metal type and large variation in the size of individual doped areas. We introduce the concept of a dynamic BPE, which transforms from an initial metal disk of a fixed size to one that is a composite of p- and n-doped polymer joined by the initial metallic BPE. The internal structure of the dynamic BPE, as measured by the n/p area ratio, reflects the properties of only the mixed conductor of the PLEC active layer itself when the area ratio converges.

Laser-Induced Bipolar Electrochemistry-On-Demand Formation of Bipolar Electrodes in a Solid Polymer Light-Emitting Electrochemical Cell

Bipolar electrochemistry (BPEC) is a versatile and powerful technique that has found applications in sensing, chemical synthesis, catalysis, fuel cells, and batteries, among others. In BPEC, the reactions of interest occur at a wireless, bipolar electrode (BPE). BPEC is most commonly carried out in an electrochemical cell that contains an electrolyte solution, in which a metallic BPE is immersed and polarized when the wired driving electrodes are biased. In this article, we demonstrate BPEC in a solid light-emitting electrochemical cell (LEC) that does not initially contain a BPE. Shining a focused laser beam onto the mixed conductor LEC film causes the illuminated spot to function as a BPE from which redox reactions are induced and visualized. Separate experiments using a photosensitizer (widely used in polymer solar cells) confirm that a BPE is formed on-demand via photoabsorption that causes the illuminated spot to have elevated photoconductivity. The simplicity of laser-induced BPEC offers exciting opportunities to explore sciences and applications of BPEC in the new realm of solid-state organic photonic devices.

Thermoelectric Enhancement by Compositing Carbon Nanotubes into Iodine-Doped Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]

Free-standing iodine-doped composite samples of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with carbon nanotubes (NTs) showed thermoelectric (TE) power factors (PFs) up to 33 μW·m^-1·K^-2 after optimizing multiple factors, including: (1) sample fabrication solvent, (2) doping time, (3) average MEH-PPV molecular weight, (4) NT fraction in the composite, and (5) use of single-wall versus multi-wall nanotubes (SWNT and MWNT, respectively). Composite fabrication from halogenated solvents gave the best TE performance after iodine doping times of 2-4 h; performance drops substantially in ∼20 h doped samples. TE performance dropped after at least 24 h of removal from iodine vapor but was fully restored upon re-exposure to the dopant. Longer-chain MEH-PPV gave not only mechanically stronger films but also higher PFs in doped SWNT composites. MWNT composites gave low PFs, attributed to poor NT dispersion. Scanning electron microscopy showed increasingly extensive network formation as NT fraction increased in the composites; this phase separation provides charge transport pathways that improve thermoelectric PFs. The results support a strategy of producing phase-separated materials having both electrical conduction enhanced regions and Seebeck thermopower retaining regions to maximize organic TE response.

The effect of the backbone structure on the thermoelectric properties of donor–acceptor conjugated polymers

This work illustrated a relationship between backbone structure and thermoelectric properties through a study of three donor–acceptor (D–A)-structured conjugated polymers.

Increased mobility induced by addition of a Lewis acid to a Lewis basic conjugated polymer

Through simple addition of a Lewis acid to a conjugated polymer bearing a Lewis basic heteroatom, the hole transport of the polymer can be effectively p-doped resulting in a two-orders increase in hole mobility. The temperature dependent hole transport of a variety of Lewis acid concentrations are explored.

Hybrid nanoimprinted laser based on conjugated conductive polymer and nanocrystal quantum dots

A composite of the conjugate conductive polymer poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and CdSe/ZnS quantum dots (QDs) is utilized for nanoimprinted lasers after drop-casting onto one-dimensional omnidirectional Bragg mirrors. Strong amplified spontaneous emission is observed at the resonances of both the QDs and the polymer. Clearly resolved, low-threshold lasing was found after nanoimprinting of distributed-feedback gratings on the composite surface. Energy transfer between the polymer molecules and the QDs is demonstrated by excitation spectroscopy.

The dynamic organic p-n junction

Static p-n junctions in inorganic semiconductors are exploited in a wide range of today's electronic appliances. Here, we demonstrate the in situ formation of a dynamic p-n junction structure within an organic semiconductor through electrochemistry. Specifically, we use scanning kelvin probe microscopy and optical probing on planar light-emitting electrochemical cells (LECs) with a mixture of a conjugated polymer and an electrolyte connecting two electrodes separated by 120 microm. We find that a significant portion of the potential drop between the electrodes coincides with the location of a thin and distinct light-emission zone positioned >30 microm away from the negative electrode. These results are relevant in the context of a long-standing scientific debate, as they prove that electrochemical doping can take place in LECs. Moreover, a study on the doping formation and dissipation kinetics provides interesting detail regarding the electronic structure and stability of the dynamic organic p-n junction, which may be useful in future dynamic p-n junction-based devices.

Effect of non-zero Schottky barrier on the J-V characteristics of organic diodes

Current-voltage (J-V) characteristics of poly(3-hexylthiophene) (P3HT) are studied at different temperatures upto high voltages approximately 20V in the hole-only device configuration. The characteristics are studied in the temperature range 310-210K. In the intermediate voltage range the J-V characteristics follow J proportional to V(l+1), where l > 1. As the voltage increases to high values J still varies as a power law i.e. as V(m), but contrary to the literature result m becomes < 2. This behavior is explained theoretically in terms of non-zero injection Schottky barriers. The complete analytical expressions for the actual trap filled limit voltage (V'(TFL)) and J-V curves beyond V'(TFL) are presented.

Electron injection into organic semiconductor devices from high work function cathodes

We show that polymer light-emitting diodes with high work-function cathodes and conjugated polyelectrolyte injection/transport layers exhibit excellent efficiencies despite large electron-injection barriers. Correlation of device response times with structure provides evidence that the electron-injection mechanism involves redistribution of the ions within the polyelectrolyte electron-transport layer and hole accumulation at the interface between the emissive and electron-transport layers. Both processes lead to screening of the internal electric field and a lowering of the electron-injection barrier. The hole and electron currents are therefore diffusion currents rather than drift currents. The response time and the device performance are influenced by the type of counterion used.

Scanning Kelvin probe imaging of the potential profiles in fixed and dynamic planar LECs

We measure the potential profiles of both dynamic and fixed junction planar light-emitting electrochemical cells (LECs) using Scanning Kelvin Probe Microscopy (SKPM) and compare the results against models of LEC operation. We find that, in conventional dynamic junction LECs formed using lithium trifluoromethanesulfonate (LiTf), poly(ethylene oxide) (PEO), and the soluble alkoxy-PPV derivative poly[2-methoxy-5-(3',7'-dimethyl-octyloxy)-p-phenylenevinylene (MDMO-PPV), the majority (>90%) of the potential is dropped near the cathode with little potential drop across either the film or the anode/polymer interface. In contrast, when examining fixed junction LECs where the LiTf is replaced with [2-(methacryloyloxy)ethyl] trimethylammonium 2-(methacryloyloxy)ethane-sulfonate (METMA/MES), the potential is dropped at both contacts during the initial poling. The potential profile evolves over a period of approximately 60 min under bias to achieve a final profile similar to that obtained in the LiTf systems. In addition to elucidating the differences between conventional dynamic LECs and fixed LECs incorporating cross-linkable ion pair monomers, the results on both systems provide direct evidence for a primarily "p-type" LEC consistent with the emitting junction near the cathode and relatively small electric fields across the bulk of the device for these two material systems.