Transfer of a chemical substrate pattern into an island-forming diblock copolymer film

Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments

Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block copolymer domains. We clarified that spatially-selective lamellar orientations of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) could be achieved by a change of an underlying SAM. The change of an underlying SAM is composed of the transition of an NO2 group to an NH2 group, which is induced by EB. The modification in the polarity of different regions of the SAM with EB lithography controlled the lamellar orientation of PS-b-PMMA. The reduction of the NPHT SAM plays an important role in the orientation of block copolymer. This method might significantly simplify block copolymer DSA processes when it is compared to the conventional DSA process. By investigating the lamellae orientation with EB, it is clarified that only suitable annealing temperatures and irradiation doses lead to the vertical orientation. We also fabricated pre-patterned Si substrates by EB lithographic patterning and reactive ion etching (RIE). DSA onto such pre-patterned Si substrates was proven to be successful for subdivision of the lithographic patterns into line and space patterns.

Spatial control of the topography of photo-sensitive block copolymer thin films

Spatially controlling self-assembly of block copolymer thin films through photoinduced molecular interactions that significantly impact on the glass transition temperature.

Influence of substrate interaction and confinement on electric-field-induced transition in symmetric block-copolymer thin films

In the present work, we study morphologies arising due to competing substrate interaction, electric field, and confinement effects on a symmetric diblock copolymer. We employ a coarse-grained nonlocal Cahn-Hilliard phenomenological model taking into account the appropriate contributions of substrate interaction and electrostatic field. The proposed model couples the Ohta-Kawasaki functional with Maxwell equation of electrostatics, thus alleviating the need for any approximate solution used in previous studies. We calculate the phase diagram in electric-field-substrate strength space for different film thicknesses. In addition to identifying the presence of parallel, perpendicular, and mixed lamellae phases similar to analytical calculations, we also find a region in the phase diagram where hybrid morphologies (combination of two phases) coexist. These hybrid morphologies arise either solely due to substrate affinity and confinement or are induced due to the applied electric field. The dependence of the critical fields for transition between the various phases on substrate strength, film thickness, and dielectric contrast is discussed. Some preliminary 3D results are also presented to corroborate the presence of hybrid morphologies.

Local reorganization of diblock copolymer domains in directed self-assembly monitored by in situ high-temperature AFM

In situ high-temperature AFM was used to locally follow dynamic processes, leading to directed self-assembly of copolymers in the context of graphoepitaxy. We focused on the effect of heating for temperatures much higher than the Tg of the used PS-b-PMMA polymer. We showed that such conditions favors the block rearrangement, leading to very regular and perfectly aligned structures in limited times. The use of in situ AFM allowed us to locally investigate the self-organization process at high temperature, thus bringing new insights into self-assembly of block copolymers by graphoepitaxy. In particular, we demonstrate that a slight increase of temperature between 180 and 200 °C allowed overpassing an energy barrier and considerably improves the long distance arrangement, even for relatively short times.

Long-range ordering of block copolymer cylinders driven by combining thermal annealing and substrate functionalization

This work presents a new method for forming well-defined nanostructured thin films from self-assembled polystyrene-block-poly(l-lactide) (PS-PLLA) on Si wafers with a functionalized SiO2 surface. Large, well-ordered, perpendicular PLLA cylinders in PS-PLLA thin films can be formed using the functionalized substrate. In contrast to random copolymers, a neutral substrate for the PS and PLLA blocks is formed by functionalizing a substrate with hydroxyl-terminated PS (PS-OH) followed by hydroxyl-terminated PLLA (PLLA-OH). The heterogeneous grafting of PS-OH and PLLA-OH can be substantially alleviated using this two-step functionalization. Accordingly, the surface properties can be fine-tuned by controlling the ratio of grafted PS-OH to PLLA-OH to control the orientation of the PLLA cylinders on the functionalized SiO2. Nevertheless, the orientation that is driven by the neutral substrate is surprisingly limited in that the effective length of orienting cylinders is less than twice the interdomain spacing. Thermal annealing at high temperature can yield a neutral air surface, rendering perpendicular PLLA cylinders that stand sub-micrometers from the air surface. Consequently, the neutral substrate can be used to enable truly film-spanning perpendicular cylinders in films to be fabricated using the high-temperature thermal treatment. In addition, the perpendicular cylinders can be laterally ordered by further increasing the annealing temperature. The ability to create these film-spanning perpendicular cylinders in films with a well-ordered texture and sub-micrometer thickness opens up possible applications in nanotechnology.

Fast assembly of ordered block copolymer nanostructures through microwave annealing

Block copolymer self-assembly is an innovative technology capable of patterning technologically relevant substrates with nanoscale precision for a range of applications from integrated circuit fabrication to tissue interfacing, for example. In this article, we demonstrate a microwave-based method of rapidly inducing order in block copolymer structures. The technique involves the usage of a commercial microwave reactor to anneal block copolymer films in the presence of appropriate solvents, and we explore the effect of various parameters over the polymer assembly speed and defect density. The approach is applied to the commonly used poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) and poly(styrene)-b-poly(2-vinylpyridine) (PS-b-P2VP) families of block copolymers, and it is found that the substrate resistivity, solvent environment, and anneal temperature all critically influence the self-assembly process. For selected systems, highly ordered patterns were achieved in less than 3 min. In addition, we establish the compatibility of the technique with directed assembly by graphoepitaxy.

Control of self-assembly of lithographically patternable block copolymer films

Poly(alpha-methylstyrene)-block-poly(4-hydroxystyrene) acts as both a lithographic deep UV photoresist and a self-assembling material, making it ideal for patterning simultaneously by both top-down and bottom-up fabrication methods. Solvent vapor annealing improves the quality of the self-assembled patterns in this material without compromising its ability to function as a photoresist. The choice of solvent used for annealing allows for control of the self-assembled pattern morphology. Annealing in a nonselective solvent (tetrahydrofuran) results in parallel orientation of cylindrical domains, while a selective solvent (acetone) leads to formation of a trapped spherical morphology. Finally, we have self-assembled both cylindrical and spherical phases within lithographically patterned features, demonstrating the ability to precisely control ordering. Observing the time evolution of switching from cylindrical to spherical morphology within these features provides clues to the mechanism of ordering by selective solvent.

Effect of temperature on the morphology and kinetics of surface pattern formation in thin block copolymer films

Hole formation and growth on the top layer of thin symmetric diblock copolymer films, forming an ordered lamellar structure parallel to the solid substrate (silicon wafer) within these films, is investigated as a function of time (t), temperature (T), and film thickness (l), using a high-throughput experimental technique. The kinetics of this surface pattern formation process is interpreted in terms of a first-order reaction model with a time-dependent rate constant determined uniquely by the short-time diffusive growth kinetics characteristic of this type of ordering process. On the basis of this model, we conclude that the average hole size, lambda(h), approaches a steady-state value, lambda(h)(t-->infinity) identical with lambda(h,infinity)(T), after long annealing times. The observed change in lambda(h,infinity)(T) with temperature is consistent with a reduction of the surface elasticity (Helfrich elastic constant) of the outer block copolymer layer with increasing temperature. We also find that the time constant, tau(T), characterizing the rate at which lambda(h)(t) approaches lambda(h,infinity)(T), first decreases and then increases with increasing temperature. This temperature variation of tau(T) is attributed to two basic competing effects that influence the rate of ordering in block copolymer materials: the reduction in molecular mobility at low temperatures associated with glass formation and a slowing of the rate of ordering due to fluctuation effects associated with an approach to the block copolymer film disordering temperature (T(d)) from below.

Unconventional methods for forming nanopatterns

Nanostructured materials have become an increasingly important theme in research, in no small part due to the potential impacts this science holds for applications in technology, including such notable areas as sensors, medicine, and high-performance integrated circuits. Conventional methods, such as the top-down approaches of projection lithography and scanning beam lithography, have been the primary means for patterning materials at the nanoscale. This article provides an overview of unconventional methods - both top-down and bottom-up approaches - for generating nanoscale patterns in a variety of materials, including methods that can be applied to fragile molecular systems that are difficult to pattern using conventional lithographic techniques. The promise, recent progress, advantages, limitations, and challenges to future development associated with each of these unconventional lithographic techniques will be discussed with consideration given to their potential for use in large-scale manufacturing.

Preparation of porous materials with ordered hole structure

This review paper investigates the synthesis of porous structures with controlled hole pattern and provides an overall view of the various factors involved when synthesizing such porous materials. The following factors are discussed: 1) various methods of synthesis to produce the porous structures; 2) materials which the porous structures are made of; 3) control of the pore structure; 4) various applications of such porous materials. The materials of the porous structures and the control of the pore structure will also be discussed separately under each different method, as these two factors are closely dependent on the method of fabrication.

Self-assembly of a diblock copolymer on a patterned surface with low-energy electron beam

A pattern was generated by 500 eV electron beam irradiation on benzaldimine monolayer through a grid and subsequent hydrolysis of nonirradiated regions. While we tried to assemble a block copolymer, polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP), on the pattern, we observed that the polarity difference between the two different regions was not right for discriminating the wetting behavior of two blocks of the polymer. Among various modifications of the retrieved amine, it was found that tribromoacetaldehyde was suitable for this end. Surprisingly, treatment of the aldehyde gave a surface preferring the polystyrene block to poly(4-vinylpyridine) block, while the irradiated section favored the latter block. As a result, island morphology was observed on the tribromoacetaldimine region and hole morphology on the irradiated region when the film thickness was 1.3Lo. Contact angle data were consistent with the observed symmetric wetting on the former region and the asymmetric one on the latter.

Computer simulation study of pattern transfer in AB diblock copolymer film adsorbed on a heterogeneous surface

In this work we investigate how a pattern imposed in a copolymer film at a certain distance from the surface propagates through the film onto an adsorbing heterogeneous surface. We bias the copolymer film to adopt a specified target pattern and then use simulation to design a surface pattern that helps the adsorbed film to maintain that target pattern. We examine the effect of varying the copolymer chain length, the size of the target pattern, and the distance from the surface where the target pattern is applied, z', on the extent of pattern transfer. For each chain length, target pattern, and z' we compare the energy of the system when a pattern is applied in the bulk to the energy when no pattern is applied in order to understand why a certain pattern size is transferred to the surface with higher fidelity than the others. At constant chain length, pattern transfer is best when the pattern size brings the energy of the system close to the energy when no pattern is applied. At constant pattern size, pattern transfer is best in the systems with longer chains. This is because longer chains are more likely to adsorb as brushes and loops which then helps transfer the pattern through the adsorbed film down to the surface.

Interfacial reactions in confinement: kinetics and temperature dependence of the surface hydrolysis of polystyrene-block-poly(tert-butyl acrylate) thin films

The effect of confinement on the kinetics of the surface hydrolysis of polystyrene-block-poly(tert-butyl acrylate) (PS(n)-b-PtBA(m)) thin films on oxidized silicon substrates in 3 M aqueous hydrochloric acid was systematically investigated. As shown by X-ray photoelectron spectroscopy (XPS) and contact angle measurements, a skin layer of acid-sensitive PtBA is present on the surface of PS(n)-b-PtBA(m) films, consistent with the lower surface tension of PtBA compared to that of PS. The thickness of the skin layer was determined by angle-dependent XPS as approximately 8 nm for PS(690)-b-PtBA(1210). Tapping mode atomic force microscopy showed an increasing surface coverage of swollen poly(acrylic acid)-rich globules with increasing hydrolysis time. Using ex situ Fourier transform infrared spectroscopy, the reaction kinetics was determined quantitatively as a function of temperature, polymer film thickness, thermal pretreatment of the films, and block copolymer composition. The initial stages of the hydrolysis can be described as a pseudo-first-order reaction under all conditions investigated. The corresponding rate constants were found to be 2 orders of magnitude lower than those reported for the hydrolysis of tert-butyl acetate in solution and depended linearly on the fraction of PtBA exposed at the surface. However, the polymer film thickness, thermal pretreatment of the films, block copolymer composition, and local composition did not affect the rate constants. The negative value of the activation entropy (DeltaS(298)++ = -103 J/mol K), determined according to the Arrhenius equation and transition state theory, indicates that the tightness of the transition state is more pronounced in the PS(n)-b-PtBA(m) film compared to reactions in solution. Thus, the spatial constraints due to the incorporation of the reactive ester groups in thin polymer films are responsible for the observed reduced reactivity.

Fabrication of a gradient heterogeneous surface using homopolymers and diblock copolymers

The strength of the interfacial interactions and the length scale over which these interactions occur are key factors in understanding the thin film behavior of polymer blends and diblock copolymers, adhesion, wettability, and recognition processes of cells and random heteropolymers on surfaces. Here, gradient heterogeneous surface topographies were prepared using thin films of mixtures of homopolymers and diblock copolymers to vary the lateral size scale of heterogeneities from the microscopic to nanoscopic. Dewetting, phase separation, and cell adhesion were used to demonstrate the utility of these surfaces having gradient heterogeneous topographies. By tuning the lateral size scale of the heterogeneities, surface patterns can be engineered to meet a specific function. Gradient surfaces offer a straightforward method to optimize various length scales of heterogeneity.

Phase behavior in thin films of cylinder-forming ABA block copolymers: Experiments

We experimentally establish a phase diagram of thin films of concentrated solutions of a cylinder forming polystyrene-block-polybutadiene-block-polystyrene triblock copolymer in chloroform. During annealing the film forms islands and holes with energetically favored values of film thickness. The thin film structure depends on the local thickness of the film and the polymer concentration. Typically, at a thickness close to a favored film thickness parallel orientation of cylinders is observed, while perpendicular orientation is formed at an intermediate film thickness. At high polymer concentration the cylindrical microdomains reconstruct to a perforated lamella structure. Deviations from the bulk structure, such as the perforated lamella and a wetting layer are stabilized in films thinner than approximately 1.5 domain spacings.

Copolymer-assisted generation of three-dimensional patterns by replicating two-dimensional substrate motifs

We use a three-dimensional self-consistent field model to study copolymer adsorption from polymer melts onto chemically heterogeneous substrates. We show that in situations where the copolymer sequence distribution is commensurate with the spatial distribution of the substrate chemical impurities, the two-dimensional substrate pattern gets transcribed into three dimensions and propagates into the polymer mixture. This transference scheme can assist in designing nanostructures that find use in various areas of science and technology.