Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics

Cu2ZnSnS4 monograin layer solar cells for flexible photovoltaic applications

Monograin powder technology is one possible path to developing sustainable, lightweight, flexible, and semi-transparent solar cells, which might be ideal for integration with various building and product elements. In recent years, the main research focus of monograin technology has centered around understanding the synthesis and optoelectronic properties of kesterite-type absorber materials. Among these, Cu2ZnSnS4 (CZTS) stands out as a promising solar cell absorber due to its favorable optical and electrical characteristics. CZTS is particularly appealing as its constituent elements are abundant and non-toxic, and it currently holds the record for highest power conversion efficiency (PCE) among emerging inorganic thin-film PV candidates. Despite its advantages, kesterite solar cells' PCE still falls significantly behind the theoretical maximum efficiency due to the large VOC deficit. This review explores various strategies aimed at improving VOC losses to enhance the overall performance of CZTS monograin layer solar cells. It was found that low-temperature post-annealing of CZTS powders reduced Cu-Zn disordering, increasing Eg by ∼100 meV and VOC values; however, achieving the optimal balance between ordered and disordered regions in kesterite materials is crucial for enhancing photovoltaic device performance due to the coexistence of ordered and disordered phases. CZTS alloying with Ag and Cd suppressed non-radiative recombination and increased short-circuit current density. Optimizing Ag content at 1% reduced CuZn antisite defects, but higher Ag levels compensated for acceptor defects, leading to reduced carrier density and decreased solar cell performance. Co-doping with Li and K resulted in an increased bandgap (1.57 eV) and improved VOC, but further optimization is required due to a relatively large difference between measured and theoretical VOC. Heterojunction modifications led to the most effective PCE improvement in CZTS-based solar cells, achieving an overall efficiency of 12.06%.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

Energy band alignment at the heterointerface between CdS and Ag-alloyed CZTS

Energy band alignment at the heterointerface between CdS and kesterite Cu₂ZnSnS₄ (CZTS) and its alloys plays a crucial role in determining the efficiency of the solar cells. Whereas Ag alloying of CZTS has been shown to reduce anti-site defects in the bulk and thus rise the efficiency, the electronic properties at the interface with the CdS buffer layer have not been extensively investigated. In this work, we present a detailed study on the band alignment between n-CdS and p-CZTS upon Ag alloying by depth-profiling ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). Our findings indicate that core-level peaks and the valence band edge of CdS exhibit a significant shift to a lower energy (larger than 0.4 eV) upon the etching of the CdS layer, which can be assigned due to band bending and chemical shift induced by a change in the chemical composition across the interface. Using a simplified model based on charge depletion layer conservation, a significantly larger total charge region depletion width was determined in Ag-alloyed CZTS as compared to its undoped counterpart. Our findings reveal a cliff-like band alignment at both CdS/CZTS and CdS/Ag-CZTS heterointerfaces. However, the conduction-band offset decreases by more than 0.1 eV upon Ag alloying of CZTS. The approach demonstrated here enables nanometer-scale depth profiling of the electronic structure of the p–n junction and can be universally applied to study entirely new platforms of oxide/chalcogenide heterostructures for next-generation optoelectronic devices.

Recent Development in Earth-Abundant Kesterite Materials and Their Applications

Kesterite Cu2ZnSnS4 (CZTS) has attracted attention as an earth-abundant alternative to commercially successful CIGS solar cells. CZTS exhibits decent optoelectrical properties while having excellent stability on top of being an earth-abundant, low-cost and non-toxic material. Therefore, in recent years, there has been a significant research effort to develop CZTS-based devices. The efficiency of CZTS solar cells reached 12.6% in 2013, and this was a remarkable achievement at the time. However, the efficiency of these devices has been stagnant since then while emerging technologies, most notably perovskite solar cells, keep breaking record after record. Currently, CZTS research focuses on discovering the secrets of material properties that hinder the efficiency of CZTS solar cells while branching out to develop alternative applications for this material. In this review, we summarize the interesting properties of CZTS as well as its promising applications, which include thin-film solar cells, charge-transfer layers in perovskite solar cells, and photoelectrochemical water splitting while briefly commenting on its other possible applications.

New Earth-Abundant Thin Film Solar Cells Based on Chalcogenides

At the end of 2017 roughly 1.8% of the worldwide electricity came from solar photovoltaics (PV), which is foreseen to have a key role in all major future energy scenarios with an installed capacity around 5 TW by 2050. Despite silicon solar cells currently rule the PV market, the extremely more versatile thin film-based devices (mainly Cu(In,Ga)Se2 and CdTe ones) have almost matched them in performance and present room for improvement. The low availability of some elements in the present commercially available PV technologies and the recent strong fall of silicon module price below 1 $/Wp focused the attention of the scientific community on cheap earth-abundant materials. In this framework, thin film solar cells based on Cu2ZnSnS4 (CZTS) and the related sulfur selenium alloy Cu2ZnSn(S,Se)4 (CZTSSe) were strongly investigated in the last 10 years. More recently, chalcogenide PV absorbers potentially able to face TW range applications better than CZTS and CZTSSe due to the higher abundance of their constituting elements are getting considerable attention. They are based on both MY2 (where M = Fe, Cu, Sn and Y = S and/or Se) and Cu2XSnY4 (where X = Fe, Mn, Ni, Ba, Co, Cd and Y = S and/or Se) chalcogenides. In this work, an extensive review of emerging earth-abundant thin film solar cells based on both MY2 and Cu2XSnY4 species is given, along with some considerations on the abundance and annual production of their constituting elements.

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presented, toward the relative slowdown in the recent years partly explained by the large open-circuit voltage (V_OC ) deficit recurrently observed even in the best solar cell devices in the literature. Then, through a comparison with the close cousin Cu(In,Ga)Se₂ technology, doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite. In the second section herein, intrinsic and extrinsic doping, as well as alloying strategies are reviewed, presenting the most relevant and recent results, and proposing possible pathways for future implementation. In the last section, a review on technological applications of kesterite is presented, going beyond conventional photovoltaic devices, and demonstrating their suitability as potential candidates in advanced tandem concepts, photocatalysis, thermoelectric, gas sensing, etc.

Probing the CZTS/CdS heterojunction utilizing photoelectrochemistry and x-ray absorption spectroscopy

The importance of renewable resources is becoming more and more influential on research due to the depletion of fossil fuels. Cost-effective ways of harvesting solar energy should also be at the forefront of these investigations. Cu₂ZnSnS₄ (CZTS) solar cells are well within the frame of these goals, and a thorough understanding of how they are made and processed synthetically is crucial. The CZTS/CdS heterojunction was examined using photoelectrochemistry and synchrotron radiation (SR) spectroscopy. These tools provided physical insights into this interface that was formed by the electrophoretic deposition of CZTS nanocrystals and chemical bath deposition (CBD) of CdS for the respective films. It was discovered that CBD induced a change in the local and long range environment of the Zn in the CZTS lattice, which was detrimental to the photoresponse. X-ray absorption near-edge structures and extended X-ray absorption fine structures (EXAFSs) of the junction showed that this change was at an atomic level and was associated with the coordination of oxygen to zinc. This was confirmed through FEFF fitting of the EXAFS and through IR spectroscopy. It was found that this change in both photoresponse and the Zn coordination can be reversed with the use of low temperature annealing. Investigating CZTS through SR techniques provides detailed structural information of minor changes from the zinc perspective.

Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials

As a promising candidate for low-cost and environmentally friendly thin-film photovoltaics, the emerging kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have experienced rapid advances over the past decade. However, the record efficiency of CZTSSe solar cells (12.6%) is still significantly lower than those of its predecessors Cu(In,Ga)Se2 (CIGS) and CdTe thin-film solar cells. This record has remained for several years. The main obstacle for this stagnation is unanimously attributed to the large open-circuit voltage (VOC) deficit. In addition to cation disordering and the associated band tailing, unpassivated interface defects and undesirable energy band alignment are two other culprits that account for the large VOC deficit in kesterite solar cells. To capture the great potential of kesterite solar cells as prospective earth-abundant photovoltaic technology, current research focuses on cation substitution for CZTSSe-based materials. The aim here is to examine recent efforts to overcome the VOC limit of kesterite solar cells by cation substitution and to further illuminate several emerging prospective strategies, including: i) suppressing the cation disordering by distant isoelectronic cation substitution, ii) optimizing the junction band alignment and constructing a graded bandgap in absorber, and iii) engineering the interface defects and enhancing the junction band bending.

Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells

Combinations of sub 1 μm absorber films with high-work-function back surface contact layers are expected to induce large enough internal fields to overcome adverse effects of bulk defects on thin-film photovoltaic performance, particularly in earth-abundant kesterites. However, there are numerous experimental challenges involving back surface engineering, which includes exfoliation, thinning, and contact layer optimization. In the present study, a unique combination of nanocharacterization tools, including nano-Auger, Kelvin probe force microscopy (KPFM), and cryogenic focused ion beam measurements, are employed to gauge the possibility of surface potential modification in the absorber back surface via direct deposition of high-work-function metal oxides on exfoliated surfaces. Nano-Auger measurements showed large compositional nonuniformities on the exfoliated surfaces, which can be minimized by a brief bromine-methanol etching step. Cross-sectional nano-Auger and KPFM measurements on Au/MoO₃/Cu₂ZnSn(S,Se)₄ (CZTSSe) showed an upward band bending as large as 400 meV within the CZTSSe layer, consistent with the high work function of MoO₃, despite Au incorporation into the oxide layer. Density functional theory simulations of the atomic structure for bulk amorphous MoO₃ demonstrated the presence of large voids within MoO₃ enabling Au in-diffusion. With a less diffusive metal electrode such as Pt or Pd, upward band bending beyond this level is expected to be achieved.

Substitution of Li for Cu in Cu2ZnSnS4: Toward Wide Band Gap Absorbers with Low Cation Disorder for Thin Film Solar Cells

The substitution of lithium for copper in Cu₂ZnSnS₄ (CZTS) has been experimentally and theoretically investigated. Formally, the (Cu_1-xLi_x)ZnSnS₄ system exhibits two well-defined solid solutions. Indeed, single crystal structural analyses demonstrate that the low (x < 0.4) and high (x > 0.6) lithium-content compounds adopt the kesterite structure and the wurtz-kesterite structure, respectively. For x between 0.4 and 0.6, the two aforementioned structure types coexist. Moreover, ¹¹⁹Sn NMR analyses carried out on a (Cu_0.7Li_0.3)₂ZnSnS₄ sample clearly indicate that lithium replaces copper preferentially on two of the three available 2-fold crystallographic sites commonly occupied by Cu and Zn in disordered kesterite. Furthermore, the observed individual lines in the NMR spectrum suggest that the propensity of Cu and Zn atoms to be randomly distributed over the 2c and 2d crystallographic sites is lowered when lithium is partially substituted for copper. Additionally, the first-principles calculations provide insights into the arrangement of Li atoms as a function of the Cu/Zn disorder and its effect on the structural (lattice parameters) and optical properties of CZTS (band gap evolution). Those calculations agree with the experimental observations and account for the evolutions of the unit cell parameters as well as for the increase of band gap when the Li-content increases. The calculation of the formation enthalpy of point defect unambiguously indicates that Li modifies the Cu/Zn disorder in a manner similar to the change of Cu/Zn disorder induced by Ag alloying. Overall, it was found that Li alloying is a versatile way of tuning the optoelectronic properties of CZTS making it a good candidate as wide band gap materials for the top cells of tandem solar cells.