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Christensen DV, Steegemans TS, D Pomar T, Chen YZ, Smith A, Strocov VN, Kalisky B, Pryds N. Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability. Nat Commun 2024; 15:4249. [PMID: 38762504 PMCID: PMC11102559 DOI: 10.1038/s41467-024-48398-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 04/30/2024] [Indexed: 05/20/2024] Open
Abstract
Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal, and extraordinary magnetoresistance, each with distinct physical origins. In recent years, extreme magnetoresistance (XMR) has been observed in topological and non-topological materials displaying a non-saturating magnetoresistance reaching 103-108% in magnetic fields up to 60 T. XMR is often intimately linked to a gapless band structure with steep bands and charge compensation. Here, we show that a linear XMR of 80,000% at 15 T and 2 K emerges at the high-mobility interface between the large band-gap oxides γ-Al2O3 and SrTiO3. Despite the chemically and electronically very dissimilar environment, the temperature/field phase diagrams of γ-Al2O3/SrTiO3 bear a striking resemblance to XMR semimetals. By comparing magnetotransport, microscopic current imaging, and momentum-resolved band structures, we conclude that the XMR in γ-Al2O3/SrTiO3 is not strongly linked to the band structure, but arises from weak disorder enforcing a squeezed guiding center motion of electrons. We also present a dynamic XMR self-enhancement through an autonomous redistribution of quasi-mobile oxygen vacancies. Our findings shed new light on XMR and introduce tunability using dynamic defect engineering.
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Affiliation(s)
- D V Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark.
| | - T S Steegemans
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - T D Pomar
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - Y Z Chen
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - A Smith
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - V N Strocov
- Swiss Light Source, Paul Scherrer Institute, 5232, Villigen-PSI, Switzerland
| | - B Kalisky
- Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 5290002, Israel
| | - N Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
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2
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Arslanov TR, Zalibekov UZ, Ashurov GG, Losanov KK, Zhao X, Dai B, Ril AI. Ratio of 4:1 between ZnGeAs 2and MnAs phases in a single composite and its impact on the structure-driven magnetoresistance. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:315802. [PMID: 38657635 DOI: 10.1088/1361-648x/ad42f5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Accepted: 04/24/2024] [Indexed: 04/26/2024]
Abstract
A strong influence of the lattice degree of freedom on magnetoresistance (MR) under high pressure underlies the conception of 'structure-driven' magnetoresistance (SDMR). In most magnetic or topological materials, the suppression of MR with increasing pressure is a general trend, while for some magnetic composites the MR enhances and even shows unusual behavior as a consequence of structural transition. Here we investigated the SDMR in the composite material based on the ZnGeAs2semiconductor matrix and MnAs magnetic inclusions in a phase ratio of 4:1. At ambient pressure, its magnetic and transport properties are governed by MnAs inclusions, i.e. it shows a Curie temperatureTC≈ 320 K and metallic-like conductivity. Under high pressure, the low-field room temperature MR undergoes multiple changes in the pressure range up to 7.2 GPa. The structural transition in the ZnGeAs2matrix has been found at ∼6 GPa, slightly lower than in the pure ZnGeAs2(6.2 GPa). The huge SDMR as high as 85% at 6.8 GPa and 2.5 kOe, which contains both positive and negative MR components, is accompanied by a pressure-induced metallic-like-to-semiconductor-like transition and the enhanced ferromagnetic order of MnAs inclusions. This observation offers a competing mechanism between the robust extrinsic ferromagnetism and high-pressure electronic properties of ZnGeAs2.
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Affiliation(s)
- T R Arslanov
- Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, 367003 Makhachkala, Russia
| | - U Z Zalibekov
- Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, 367003 Makhachkala, Russia
| | - G G Ashurov
- Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, 367003 Makhachkala, Russia
| | - Kh Kh Losanov
- Kabardino-Balkarian State University Named After H.M. Berbekov, 360004 Nalchik, Russia
| | - X Zhao
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China
- School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China
| | - B Dai
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China
- School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China
| | - A I Ril
- Kurnakov Institute of General and Inorganic Chemistry, RAS, 119991 Moscow, Russia
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3
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Niu R, Zhu WK. Materials and possible mechanisms of extremely large magnetoresistance: a review. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:113001. [PMID: 34794134 DOI: 10.1088/1361-648x/ac3b24] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Accepted: 11/18/2021] [Indexed: 06/13/2023]
Abstract
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 103%-108% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook.
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Affiliation(s)
- Rui Niu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
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4
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Chatterjee S, Khalid S, Inbar HS, Goswami A, Guo T, Chang YH, Young E, Fedorov AV, Read D, Janotti A, Palmstrøm CJ. Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy. SCIENCE ADVANCES 2021; 7:7/16/eabe8971. [PMID: 33853778 PMCID: PMC8046380 DOI: 10.1126/sciadv.abe8971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2020] [Accepted: 02/25/2021] [Indexed: 06/12/2023]
Abstract
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.
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Affiliation(s)
- Shouvik Chatterjee
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Shoaib Khalid
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA
- Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA
| | - Hadass S Inbar
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - Aranya Goswami
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - Taozhi Guo
- Department of Physics, University of California, Santa Barbara, CA 93106, USA
| | - Yu-Hao Chang
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - Elliot Young
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - Alexei V Fedorov
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Dan Read
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
- School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
| | - Anderson Janotti
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA.
| | - Chris J Palmstrøm
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.
- Materials Department, University of California, Santa Barbara, CA 93106, USA
- California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA
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5
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Zhao H, Li W, Chen Y, Xu C, Li B, Luo W, Qian D, Shi Z. Transport property of multi-band topological material PtBi[Formula: see text] studied by maximum entropy mobility spectrum analysis (MEMSA). Sci Rep 2021; 11:6249. [PMID: 33737569 PMCID: PMC7973776 DOI: 10.1038/s41598-021-85364-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2020] [Accepted: 02/26/2021] [Indexed: 12/03/2022] Open
Abstract
Electrical transport of both longitudinal and transverse directions carries rich information. Mobility spectrum analysis (MSA) is capable of extracting charge information from conductivity tensor, including charge types, concentration and mobilities. Using a numerical method based on maximum entropy principle, i.e., maximum entropy mobility spectrum analysis (MEMSA), mobility spectrum for [Formula: see text]-type PtBi[Formula: see text] is studied. Three hole-pockets and two electron-pockets were found, including a small hole pocket with very high mobility, which is very likely corresponding to Dirac Fermions. Benefiting from our high resolution result, we studied temperature dependence of carrier properties and explained the sign change phenomenon of Hall conductivity. We further compared the results with band structure obtained by our first principle calculation. The present results prove MEMSA is a useful tool of extracting carries' information in recently discovered Iron-based superconductors, and topological materials.
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Affiliation(s)
- Haijun Zhao
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Wenchong Li
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Yue Chen
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Chunqiang Xu
- School of Physics, Southeast University, Nanjing, 211189 China
| | - Bin Li
- Information Physics Research Center, Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
| | - Weidong Luo
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240 China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240 China
| | - Dong Qian
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240 China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240 China
| | - Zhixiang Shi
- School of Physics, Southeast University, Nanjing, 211189 China
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6
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Wang J, Qiao J, Xu K, Chen J, Zhao Y, Qiu B, Lin Z, Ji W, Chai Y. Quasi one-dimensional van der Waals gold selenide with strong interchain interaction and giant magnetoresistance. Sci Bull (Beijing) 2020; 65:1451-1459. [PMID: 36747402 DOI: 10.1016/j.scib.2020.05.008] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2020] [Revised: 04/12/2020] [Accepted: 05/08/2020] [Indexed: 11/16/2022]
Abstract
The atomic structure of quasi one-dimensional (1D) van der Waals materials can be regarded as the stacking of atomic chains to form thin flakes or nanoribbons, which substantially differentiates them from typical two-dimensional (2D) layered materials and 1D nanotube/nanowire array. Here we present our studies on quasi 1D gold selenide (AuSe) that possesses highly anisotropic crystal structure, excellent electrical conductivity, giant magnetoresistance, and unusual reentrant metallic behavior. The low in-plane symmetry of AuSe gives rise to its high anisotropy of vibrational behavior. In contrast, quasi 1D AuSe exhibits high in-plane electrical conductivity along the directions of both atomic chains and perpendicular one, which can be understood as a result of strong interchain interaction. We found that AuSe exhibits a near quadratic nonsaturating giant magnetoresistance of 1841% with the magnetic field perpendicular to its in-plane. We also observe unusual reentrant metallic behavior, which is caused by the carrier mismatch in the multiband transport. Our works help to establish fundamental understandings on quasi 1D van der Waals semimetallic AuSe and identify it as a new candidate for exploring giant magnetoresistance and compensated semimetals.
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Affiliation(s)
- Jingli Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518054, China
| | - Jingsi Qiao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China
| | - Kang Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518054, China
| | - Yuda Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Bocheng Qiu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518054, China
| | - Ziyuan Lin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518054, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518054, China.
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7
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Chen FC, Fei Y, Li SJ, Wang Q, Luo X, Yan J, Lu WJ, Tong P, Song WH, Zhu XB, Zhang L, Zhou HB, Zheng FW, Zhang P, Lichtenstein AL, Katsnelson MI, Yin Y, Hao N, Sun YP. Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe. PHYSICAL REVIEW LETTERS 2020; 124:236601. [PMID: 32603145 DOI: 10.1103/physrevlett.124.236601] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2019] [Revised: 04/06/2020] [Accepted: 05/22/2020] [Indexed: 06/11/2023]
Abstract
The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscopy (spectroscopy) [STM(S)] measurements on nodal-line semimetal ZrSiSe. Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature, which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.
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Affiliation(s)
- F C Chen
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Y Fei
- Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - S J Li
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Q Wang
- University of Science and Technology of China, Hefei 230026, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - X Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - J Yan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - W J Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - P Tong
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - W H Song
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - X B Zhu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - L Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - H B Zhou
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - F W Zheng
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
| | - P Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
| | - A L Lichtenstein
- Institute for Theoretical Physics, University Hamburg, Jungiusstrasse 9, D-20355 Hamburg, Germany
- Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
| | - M I Katsnelson
- Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, NL-6525AJ Nijmegen, The Netherlands
| | - Y Yin
- Department of Physics, Zhejiang University, Hangzhou 310027, China
- Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China
| | - Ning Hao
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Y P Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China
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8
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Yan J, Luo X, Gao JJ, Lv HY, Xi CY, Sun Y, Lu WJ, Tong P, Sheng ZG, Zhu XB, Song WH, Sun YP. The giant planar Hall effect and anisotropic magnetoresistance in Dirac node arcs semimetal PtSn 4. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:315702. [PMID: 32235052 DOI: 10.1088/1361-648x/ab851f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Accepted: 03/31/2020] [Indexed: 06/11/2023]
Abstract
Topological semimetals (TSMs) present intriguing quantum states and have attracted much attention in recent years because of exhibiting various anomalous magneto-transport phenomena. Theoretical prediction shows that some novel phenomena, such as negative magnetoresistance (MR) and the planar Hall effect (PHE), originate from the chiral anomaly in TSMs. In this work, high-field (33 T) Shubnikov-de Haas (SdH) oscillations are obtained to reveal the topology of PtSn4. Giant PHE and anisotropic magnetoresistance (AMR) are observed in Dirac node arcs of semimetal PtSn4. First, a non-zero transverse voltage can be acquired while tilting the in-plane magnetic field. Moreover, the amplitude of PHE sharply increases atT*∼ 50 K with decreasing temperature, which is suggested to be related to the Fermi surface reconstruction observed in PtSn4. Subsequently, the field-dependent amplitudes of the PHE show an abnormal behavior around 50 K, which is thought to stem from the complex correlation between the chiral charge and electric one in PtSn4driving the system into different coupling states due to the complicated band structure. On the other hand, the relative AMR is negative and up to -98% at 8.5 T. Our work proves that the PHE measurements are a convincing transport fingerprint feature to confirm the chiral anomaly in TSMs.
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Affiliation(s)
- J Yan
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
- University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - X Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - J J Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
- University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - H Y Lv
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - C Y Xi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - Y Sun
- Institute of Physical Science and Information Technology, Anhui University, Hefei, 230601, People's Republic of China
| | - W J Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - P Tong
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - Z G Sheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China
| | - X B Zhu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - W H Song
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
| | - Y P Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China
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9
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Mangelsen S, Bensch W. HfTe2: Enhancing Magnetoresistance Properties by Improvement of the Crystal Growth Method. Inorg Chem 2019; 59:1117-1124. [DOI: 10.1021/acs.inorgchem.9b02734] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Sebastian Mangelsen
- Institute of Inorganic Chemistry, Christian-Albrechts University Kiel, 24118 Kiel, Germany
| | - Wolfgang Bensch
- Institute of Inorganic Chemistry, Christian-Albrechts University Kiel, 24118 Kiel, Germany
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10
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Sankar R, Peramaiyan G, Muthuselvam IP, Xu S, Hasan MZ, Chou FC. Crystal growth and transport properties of Weyl semimetal TaAs. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:015803. [PMID: 29135472 DOI: 10.1088/1361-648x/aa9a75] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report the single crystal growth and transport properties of a Weyl semimetal TaAs. Unsaturated large magnetoresistance of about 22 100% at 2 K and 9 T is observed. From the Hall measurement, carrier concentrations n = 4.608 × 1024 m-3 and p = 3.099 × 1024 m-3, and mobilities µ p = 2.502 m2 V-1 s-1 and µ n = 16.785 m2 V-1 s-1 at 2 K are extracted. The de Haas-van Alphen oscillations at 2 K and 9 T suggest the presence of a Fermi surface, and the quantum electronic parameters such as effective cyclotron mass and Dingle temperature were obtained using Lifshitz-Kosevich fitting. Temperature dependent resistivity measurements at different static magnetic fields suggest the formation of an insulating gap in the Weyl semimetal TaAs. An angle-resolved photoemission spectroscopy study reveals Fermi arc surface states with different shaped features such as a long elliptical contour around each [Formula: see text] point, a bowtie-shaped contour around each [Formula: see text] point, and a crescent-shaped feature near the midpoint of each [Formula: see text] line.
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Affiliation(s)
- Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 10617, Taiwan. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
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Fermi surface topology and magnetotransport in semimetallic LuSb. Sci Rep 2017; 7:12822. [PMID: 28993691 PMCID: PMC5634453 DOI: 10.1038/s41598-017-12792-8] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2017] [Accepted: 09/15/2017] [Indexed: 11/08/2022] Open
Abstract
Several rare-earth monopnictides were shown to exhibit extreme magnetoresistance and field-induced low-temperature plateau of electrical resistivity. These features are also hallmarks of topological semimetals, thus the family is intensively explored with respect to magneto-transport properties and possible hosting Dirac fermion states. We report a comprehensive investigation of Fermi surface and electrical transport properties of LuSb, another representative of this family. At low temperatures, the magnetoresistance of LuSb was found to exceed 3000% without saturation in fields up to 9 T. Analysis of the Hall effect and the Shubnikov-de Haas oscillations revealed that the Fermi surface of this compound consists of several pockets originating from fairly compensated multi-band electronic structure, in full accordance with our first-principles calculations. Observed magnetotransport properties of LuSb can be attributed to the topology of three-dimensional Fermi surface and a compensation of electron and hole contributions.
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Singha R, Satpati B, Mandal P. Fermi surface topology and signature of surface Dirac nodes in LaBi. Sci Rep 2017; 7:6321. [PMID: 28740199 PMCID: PMC5524763 DOI: 10.1038/s41598-017-06697-9] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2017] [Accepted: 06/14/2017] [Indexed: 11/09/2022] Open
Abstract
Novel topological state of matter is one of the rapidly growing fields in condensed matter physics research in recent times. While these materials are fascinating from the aspect of fundamental physics of relativistic particles, their exotic transport properties are equally compelling due to the potential technological applications. Extreme magnetoresistance and ultrahigh carrier mobility are two such major hallmarks of topological materials and often used as primary criteria for identifying new compounds belonging to this class. Recently, LaBi has emerged as a new system, which exhibits the above mentioned properties. However, the topological nature of its band structure remains unresolved. Here, using the magnetotransport and magnetization measurements, we have probed the bulk and surface states of LaBi. Similar to earlier reports, extremely large magnetoresistance and high carrier mobility have been observed with compensated electron and hole density. The Fermi surface properties have been analyzed from both Shubnikov-de Haas and de Haas-van Alphen oscillation techniques. In the magnetization measurement, a prominent paramagnetic singularity has been observed, which demonstrates the non-trivial nature of the surface states in LaBi. Our study unambiguously confirms that LaBi is a three-dimensional topological insulator with possible linear dispersion in the gapped bulk band structure.
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Affiliation(s)
- Ratnadwip Singha
- Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Calcutta, 700 064, India
| | - Biswarup Satpati
- Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Calcutta, 700 064, India
| | - Prabhat Mandal
- Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Calcutta, 700 064, India.
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Large nonsaturating magnetoresistance and signature of nondegenerate Dirac nodes in ZrSiS. Proc Natl Acad Sci U S A 2017; 114:2468-2473. [PMID: 28223488 DOI: 10.1073/pnas.1618004114] [Citation(s) in RCA: 54] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Whereas the discovery of Dirac- and Weyl-type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications is an experimental challenge. In all of the reported materials, linear dispersion survives only up to a few hundred millielectronvolts from the Dirac or Weyl nodes. On the other hand, real materials are subject to uncontrolled doping during preparation and thermal effect near room temperature can hinder the rich physics. In ZrSiS, angle-resolved photoemission spectroscopy measurements have shown an unusually robust linear dispersion (up to [Formula: see text]2 eV) with multiple nondegenerate Dirac nodes. In this context, we present the magnetotransport study on ZrSiS crystal, which represents a large family of materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology. Along with extremely large and nonsaturating magnetoresistance (MR), [Formula: see text]1.4 [Formula: see text] 105% at 2 K and 9 T, it shows strong anisotropy, depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets. A nontrivial [Formula: see text] Berry phase confirms the Dirac fermionic nature for both types of charge carriers. The long-sought relativistic phenomenon of massless Dirac fermions, known as the Adler-Bell-Jackiw chiral anomaly, has also been observed.
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