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Zhu T, Liu K, Zhang Y, Meng S, He M, Zhang Y, Yan M, Dong X, Li X, Jiang M, Xu H. Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe 2/Ta 2NiSe 5 Heterostructure for Multimode Optoelectronic Logic Gate. ACS NANO 2024; 18:11462-11473. [PMID: 38632853 DOI: 10.1021/acsnano.4c02923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.
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Affiliation(s)
- Tao Zhu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Kai Liu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Yao Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Si Meng
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Mengfei He
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Yingli Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Minglu Yan
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Xiaoxiang Dong
- Department of Physics, Xiamen University, Xiamen 361005, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Man Jiang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
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Frank T, Shmueli S, Cohen Jungerman M, Shekhter P, Selzer Y. Large Seebeck Values in Metal-Molecule-Semimetal Junctions Attained by a Gateless Level-Alignment Method. NANO LETTERS 2023; 23:10473-10479. [PMID: 37930154 DOI: 10.1021/acs.nanolett.3c03188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
Molecular junctions are potentially highly efficient devices for thermal energy harvesting since their transmission properties can be tailored to break electron-hole transport symmetry and consequently yield high Seebeck and Peltier coefficients. Full harnessing of this potential requires, however, a capability to precisely position their Fermi level within the transmission landscape. Currently, with the lack of such a "knob" for two-lead junctions, their thermoelectric performance is too low for applications. Here we report that the requested capability can be realized by using junctions with a semimetal lead and molecules with a tailored effect of their monolayers on the work function of the semimetal. The approach is demonstrated by junctions with monolayers of alkanethiols on bismuth (Bi). Fermi-level tuning enables in this case increasing the Seebeck coefficient by more than 2 orders of magnitude. The underlying mechanism of this capability is discussed, as well as its general applicability.
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Affiliation(s)
- Tamar Frank
- School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel
| | - Shachar Shmueli
- School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel
| | | | - Pini Shekhter
- The Tel Aviv Center for Nanoscience and Nanotechnology, Tel Aviv 69978, Israel
| | - Yoram Selzer
- School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel
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3
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Zhang G, Lu G, Li X, Mei Z, Liang L, Fan S, Li Q, Wei Y. Reconfigurable Two-Dimensional Air-Gap Barristors. ACS NANO 2023; 17:4564-4573. [PMID: 36847653 DOI: 10.1021/acsnano.2c10593] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe2, the barristor can not only be reconfigured as an n- or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 104 for the transistor and a rectifying ratio of 105 for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.
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Affiliation(s)
- Guangqi Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Gaotian Lu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Xuanzhang Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Zhen Mei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Liang Liang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Yang Wei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
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4
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Ding EX, Liu P, Yoon HH, Ahmed F, Du M, Shafi AM, Mehmood N, Kauppinen EI, Sun Z, Lipsanen H. Highly Sensitive MoS 2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4216-4225. [PMID: 36635093 PMCID: PMC9880956 DOI: 10.1021/acsami.2c19917] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.
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Affiliation(s)
- Er-Xiong Ding
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Peng Liu
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Mingde Du
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Naveed Mehmood
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Esko I. Kauppinen
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
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5
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Li X, Wei Y, Wang Z, Kong Y, Su Y, Lu G, Mei Z, Su Y, Zhang G, Xiao J, Liang L, Li J, Li Q, Zhang J, Fan S, Zhang Y. One-dimensional semimetal contacts to two-dimensional semiconductors. Nat Commun 2023; 14:111. [PMID: 36611034 PMCID: PMC9825564 DOI: 10.1038/s41467-022-35760-x] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 12/23/2022] [Indexed: 01/09/2023] Open
Abstract
Two-dimensional (2D) semiconductors are promising in channel length scaling of field-effect transistors (FETs) due to their excellent gate electrostatics. However, scaling of their contact length still remains a significant challenge because of the sharply raised contact resistance and the deteriorated metal conductivity at nanoscale. Here, we construct a 1D semimetal-2D semiconductor contact by employing single-walled carbon nanotube electrodes, which can push the contact length into the sub-2 nm region. Such 1D-2D heterostructures exhibit smaller van der Waals gaps than the 2D-2D ones, while the Schottky barrier height can be effectively tuned via gate potential to achieve Ohmic contact. We propose a longitudinal transmission line model for analyzing the potential and current distribution of devices in short contact limit, and use it to extract the 1D-2D contact resistivity which is as low as 10-6 Ω·cm2 for the ultra-short contacts. We further demonstrate that the semimetal nanotubes with gate-tunable work function could form good contacts to various 2D semiconductors including MoS2, WS2 and WSe2. The study on 1D semimetal contact provides a basis for further miniaturization of nanoelectronics in the future.
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Affiliation(s)
- Xuanzhang Li
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Yang Wei
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Zhijie Wang
- grid.12527.330000 0001 0662 3178Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055 China
| | - Ya Kong
- grid.11135.370000 0001 2256 9319College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 China
| | - Yipeng Su
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Gaotian Lu
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Zhen Mei
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Yi Su
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Guangqi Zhang
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Jianhua Xiao
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Liang Liang
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Jia Li
- grid.12527.330000 0001 0662 3178Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055 China
| | - Qunqing Li
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Jin Zhang
- grid.11135.370000 0001 2256 9319College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 China
| | - Shoushan Fan
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
| | - Yuegang Zhang
- grid.12527.330000 0001 0662 3178State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084 China
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6
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Phan TL, Seo S, Cho Y, An Vu Q, Lee YH, Duong DL, Lee H, Yu WJ. CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm 2 junction area. Nat Commun 2022; 13:4556. [PMID: 35961959 PMCID: PMC9374722 DOI: 10.1038/s41467-022-32173-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Accepted: 07/19/2022] [Indexed: 11/20/2022] Open
Abstract
The device’s integration of molecular electronics is limited regarding the large-scale fabrication of gap electrodes on a molecular scale. The van der Waals integration (vdWI) of a vertically aligned molecular layer (0D) with 2D or 3D electrodes indicates the possibility of device’s integration; however, the active junction area of 0D-2D and 0D-3D vdWIs remains at a microscale size. Here, we introduce the robust fabrication of a vertical 1D-0D-1D vdWI device with the ultra-small junction area of 1 nm2 achieved by cross-stacking top carbon nanotubes (CNTs) on molecularly assembled bottom CNTs. 1D-0D-1D vdWI memories are demonstrated through ferroelectric switching of azobenzene molecules owing to the cis-trans transformation combined with the permanent dipole moment of the end-tail -CF3 group. In this work, our 1D-0D-1D vdWI memory exhibits a retention performance above 2000 s, over 300 cycles with an on/off ratio of approximately 105 and record current density (3.4 × 108 A/cm2), which is 100 times higher than previous study through the smallest junction area achieved in a vdWI. The simple stacking of aligned CNTs (4 × 4) allows integration of memory arrays (16 junctions) with high device operational yield (100%), offering integration guidelines for future molecular electronics. The van der Waals integration of molecular layer (0D) with 2D or 3D electrodes is limited at microscale junction. Here, the authors introduce 1D-0D-1D vdWI memory with 1 nm2 junction achieved by cross-stacking t-CNT on molecularly assembled b-CNT.
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Affiliation(s)
- Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sohyeon Seo
- Department of Chemistry, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yunhee Cho
- Department of Chemistry, Sungkyunkwan University, Suwon, 16419, Republic of Korea.,Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
| | - Quoc An Vu
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.,Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.,Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea. .,Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Hyoyoung Lee
- Department of Chemistry, Sungkyunkwan University, Suwon, 16419, Republic of Korea. .,Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
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