Connection between Si–N and Si–H vibrational properties in amorphous SiNx: H films

Constructing a Stable Si-N-Enriched Interface Boosts Lithium Storage Kinetics in a Silicon-Based Anode

The stable operation of a SiOx anode largely depends on the intrinsic chemistry of the electrode/electrolyte interface; however, an unstable interface structure and undesirable parasitic reactions with the electrolyte of the SiOx anode often result in the formation of a fragile solid-electrolyte interphase (SEI) and serious capacity decay during the lithiation/delithiation process. Herein, a Si-N-enriched N-doped carbon coating is constructed on the surface of SiOx yolk-shell nanospheres (abbreviated as SiOx@NC) to optimize the SEI film. The two-dimensional covalently bound Si-N interface, on one hand, can suppress the interfacial reactivity of the SiOx anode to enable the formation of a thin SEI film with accelerated diffusion kinetics of ions and, on the other hand, acts as a Li+ conductor during the delithiation process, allowing Li+ to diffuse rapidly in the SiOx matrix, thereby improving the long-term cycling stability and rapid charge/discharge capability of the SiOx anode. A series of characterizations show that the interface charge-transfer barrier and the Li+ diffusion energy barrier through the SEI film are the main factors that determine the interfacial electrochemical behavior and lithium storage performance. This work clarifies the relationship between the SEI characteristics and the interfacial transfer dynamics and aims to offer a more basic basis for the screening of other electrode materials.

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiN _x) films remain largely unresearched. Achieving a low WER of a SiN _x film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiN _x using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiN _x films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270-360 °C) and plasma gas compositions (N₂/NH₃ or Ar/NH₃) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities and, accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiN _x processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH₄)-based PECVD SiN _x, PEALD SiN _x WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiN _x due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.

Low temperature synthesis of silicon quantum dots with plasma chemistry control in dual frequency non-thermal plasmas

The design of advanced plasma processes by plasma and radical control is essential for the controlled low-temperature deposition of different size QDs.

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si₂Cl₆ and NH₃ Plasma

A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of SiNx thin films using Si2Cl6 and NH3 plasma. At substrate temperatures ≤400 °C, we show that this ALD process leads to films with >95% conformality over high aspect ratio nanostructures with a growth per cycle of ∼1.2 Å. The film growth mechanism was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. Our data show that on the SiNx growth surface, Si2Cl6 reacts with surface -NH2 groups to form surface -NH species, which are incorporated into the growing film. In the subsequent half cycle, radicals generated in the NH3 plasma abstract surface Cl atoms, and restore an NHx (x = 1,2)-terminated surface. Surface Si-N-Si bonds are also primarily formed during the NH3 plasma half-cycle. The infrared data and Rutherford backscattering combined with hydrogen forward scattering shows that the films contain ∼23% H atoms primarily incorporated as -NH groups.

Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties

Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties.

Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

The nc-Si-QDs/a-SiN_x:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.

Infrared ellipsometry investigation of SiO(x)N(y) thin films on silicon

The dielectric function ˜ε (˜ε = ε(1) + iε(2)) of silicon oxynitride films deposited on silicon wafers by dual ion-beam sputtering is determined by infrared ellipsometry between 580 and 5000 cm(-1). The phase-separation model is unable to reproduce the experimental data. The dependence of ˜ε on stoichiometry is analyzed with the microscopic Si-centered tetrahedron model. The random-bonding model with five SiO(4-j)N(j) (j = 0-4) tetrahedra gives a good description of the spectra, provided the dielectric function of the mixed tetrahedra is carefully chosen.