Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance

3D and Multimodal X-Ray Microscopy Reveals the Impact of Voids in CIGS Solar Cells

Small voids in the absorber layer of thin-film solar cells are generally suspected to impair photovoltaic performance. They have been studied on Cu(In,Ga)Se2 cells with conventional laboratory techniques, albeit limited to surface characterization and often affected by sample-preparation artifacts. Here, synchrotron imaging is performed on a fully operational as-deposited solar cell containing a few tens of voids. By measuring operando current and X-ray excited optical luminescence, the local electrical and optical performance in the proximity of the voids are estimated, and via ptychographic tomography, the depth in the absorber of the voids is quantified. Besides, the complex network of material-deficit structures between the absorber and the top electrode is highlighted. Despite certain local impairments, the massive presence of voids in the absorber suggests they only have a limited detrimental impact on performance.

Review of Recent Advances in Gas-Assisted Focused Ion Beam Time-of-Flight Secondary Ion Mass Spectrometry (FIB-TOF-SIMS)

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful chemical characterization technique allowing for the distribution of all material components (including light and heavy elements and molecules) to be analyzed in 3D with nanoscale resolution. Furthermore, the sample's surface can be probed over a wide analytical area range (usually between 1 µm² and 10⁴ µm²) providing insights into local variations in sample composition, as well as giving a general overview of the sample's structure. Finally, as long as the sample's surface is flat and conductive, no additional sample preparation is needed prior to TOF-SIMS measurements. Despite many advantages, TOF-SIMS analysis can be challenging, especially in the case of weakly ionizing elements. Furthermore, mass interference, different component polarity of complex samples, and matrix effect are the main drawbacks of this technique. This implies a strong need for developing new methods, which could help improve TOF-SIMS signal quality and facilitate data interpretation. In this review, we primarily focus on gas-assisted TOF-SIMS, which has proven to have potential for overcoming most of the aforementioned difficulties. In particular, the recently proposed use of XeF₂ during sample bombardment with a Ga⁺ primary ion beam exhibits outstanding properties, which can lead to significant positive secondary ion yield enhancement, separation of mass interference, and inversion of secondary ion charge polarity from negative to positive. The implementation of the presented experimental protocols can be easily achieved by upgrading commonly used focused ion beam/scanning electron microscopes (FIB/SEM) with a high vacuum (HV)-compatible TOF-SIMS detector and a commercial gas injection system (GIS), making it an attractive solution for both academic centers and the industrial sectors.

X-ray diffraction with micrometre spatial resolution for highly absorbing samples

X-ray diffraction with high spatial resolution is commonly used to characterize (poly)crystalline samples with, for example, respect to local strain, residual stress, grain boundaries and texture. However, the investigation of highly absorbing samples or the simultaneous assessment of high-Z materials by X-ray fluorescence have been limited due to the utilization of low photon energies. Here, a goniometer-based setup implemented at the P06 beamline of PETRA III that allows for micrometre spatial resolution with a photon energy of 35 keV and above is reported. A highly focused beam was achieved by using compound refractive lenses, and high-precision sample manipulation was enabled by a goniometer that allows up to 5D scans (three rotations and two translations). As experimental examples, the determination of local strain variations in martensitic steel samples with micrometre spatial resolution, as well as the simultaneous elemental distribution for high-Z materials in a thin-film solar cell, are demonstrated. The proposed approach allows users from the materials-science community to determine micro-structural properties even in highly absorbing samples.

Four-Fold Multi-Modal X-ray Microscopy Measurements of a Cu(In,Ga)Se2 Solar Cell

Inhomogeneities and defects often limit the overall performance of thin-film solar cells. Therefore, sophisticated microscopy approaches are sought to characterize performance and defects at the nanoscale. Here, we demonstrate, for the first time, the simultaneous assessment of composition, structure, and performance in four-fold multi-modality. Using scanning X-ray microscopy of a Cu(In,Ga)Se2 (CIGS) solar cell, we measured the elemental distribution of the key absorber elements, the electrical and optical response, and the phase shift of the coherent X-rays with nanoscale resolution. We found structural features in the absorber layer—interpreted as voids—that correlate with poor electrical performance and point towards defects that limit the overall solar cell efficiency.

Efficient Narrow Band Gap Cu(In,Ga)Se2 Solar Cells with Flat Surface

In this study, the influences of bromine-based etching (Br etching) of narrow band gap CuInSe₂ (CIS) absorbers and Cu(In,Ga)Se₂ absorbers with various single Ga gradings (CIS:Ga) on the properties of solar cells were investigated. Absorbers with narrow absorption edge energies (E_abs) of 1.0-1.02 eV, ideal for the application as a bottom cell in a tandem device, were fabricated using a modified three-stage process and subjected to Br etching. The evolution of surface flatness and their optical and electrical properties upon Br etching were investigated. Br etching typically reduced the root-mean-square deviation of the surface roughness height (R_q) for a CIS:Ga absorber from several hundreds to several tens of nanometers, whereas for some CIS absorbers, R_q reduction was limited by the remaining voids. Moreover, Br etching reduced the leakage current across the pn junction. The high shunt resistances (R_sh) typically up to >10 kΩ·cm² were obtained by introduction of Br etching. However, etching sometimes adversely increased the V_OC deficit. The investigation of the minority carrier lifetime and diode parameters revealed that back-surface recombination in CIS and low-Ga CIS:Ga solar cells increased as the absorber layer thickness decreased. A higher Ga grading significantly reduced back-surface recombination. Narrow band gap CIGS solar cells with improved surface flatness and high V_OC were achieved by introducing Br etching and proper Ga grading.

Microscopic Analysis of Interdiffusion and Void Formation in CdTe(1-x)Sex and CdTe Layers

The use of CdSe layers has recently emerged as a route to improving CdTe photovoltaics through the formation of a CdTe_(1-x)Se_x (CST) phase. However, the extent of the Se diffusion and the influence it has on the CdTe grain structure has not been widely investigated. In this study, we used transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD) to investigate the impact of growing CdTe layers on three different window layer structures CdS, CdSe, and CdS/CdSe. We demonstrate that extensive intermixing occurs between CdS, CdSe, and CdTe layers resulting in large voids forming at the front interface, which will degrade device performance. The use of CdS/CdSe bilayer structures leads to the formation of a parasitic CdS_(1-x)Se_x phase. Following removal of CdS from the cell structure, effective CdTe and CdSe intermixing was achieved. However, the use of sputtered CdSe had limited success in producing Se grading in CST.

PtyNAMi: ptychographic nano-analytical microscope

Ptychographic X-ray imaging at the highest spatial resolution requires an optimal experimental environment, providing a high coherent flux, excellent mechanical stability and a low background in the measured data. This requires, for example, a stable performance of all optical components along the entire beam path, high temperature stability, a robust sample and optics tracking system, and a scatter-free environment. This contribution summarizes the efforts along these lines to transform the nanoprobe station on beamline P06 (PETRA III) into the ptychographic nano-analytical microscope (PtyNAMi).