Dissolution of crystalline gallium arsenide in aqueous solutions containing complexing agents

The toxicology of gallium oxide in comparison with gallium arsenide and indium oxide

Gallium arsenide (GaAs) and indium oxide (In₂O₃) are used in electronic industries at high and increasing tonnages since decades. Gallium oxide (Ga₂O₃) is an emerging wide-bandgap transparent conductive oxide with as yet little industrial use. Since GaAs has received critical attention due to the arsenic ion, it seemed reasonable to compare its toxicology with the respective endpoints of Ga₂O₃ and In₂O₃ toxicology in order to find out if and to what extent arsenic contributes. In addition, the toxicology of Ga₂O₃ has not yet been adequately reviewed, Therefore, this review provides the first evaluation of all available toxicity data on Ga₂O₃. The acute toxicity of all three compounds is rather low. Subchronic inhalation studies in rats and mice revealed persistent pulmonary alveolar proteinosis (PAP) and/or alveolar histiocytic infiltrates down to the lowest tested concentration in rats and mice, i.e. 0.16 mg Ga₂O₃/m³. These are also the predominant effects after GaAs and In₂O₃ exposure at similarly low levels, i.e. 0.1 mg/m³ each. Subchronic Ga₂O₃ exposure caused a minimal microcytic anemia with erythrocytosis in rats (at 6.4 mg/m³ and greater) and mice (at 32 and 64 mg/m³), a decrease in epididymal sperm motility and concentration as well as testicular degeneration at 64 mg/m³. At comparable concentrations the hematological effects and male fertility of GaAs were much stronger. The stronger effects of GaAs are due to its better solubility and presumed higher bioavailability. The database for In₂O₃ is too small and subchronic testing was at very low levels to allow conclusive judgements if blood/blood forming or degrading and male fertility organs/tissues would also be targets.

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells

Extensive use of gallium arsenide (GaAs) has led to increased exposure to humans working in the semiconductor industry. This study employed physicochemical characterization of GaAs obtained from a workplace, cytotoxicity analysis of damage induced by GaAs in 16HBE cells, RNA-seq and related bioinformatic analysis, qRT-PCR verification and survival analysis to comprehensively understand the potential mechanism leading to lung toxicity induced by GaAs. We found that GaAs-induced abnormal gene expression was mainly related to the cellular response to chemical stimuli, the regulation of signalling, cell differentiation and the cell cycle, which are involved in transcriptional misregulation in cancer, the MAPK signalling pathway, the TGF-β signalling pathway and pulmonary disease-related pathways. Ten upregulated genes (FOS, JUN, HSP90AA1, CDKN1A, ESR1, MYC, RAC1, CTNNB1, MAPK8 and FOXO1) and 7 downregulated genes (TP53, AKT1, NFKB1, SMAD3, CDK1, E2F1 and PLK1) related to GaAs-induced pulmonary toxicity were identified. High expression of HSP90AA1, RAC1 and CDKN1A was significantly associated with a lower rate of overall survival in lung cancers. The results of this study indicate that GaAs-associated toxicities affected the misregulation of oncogenes and tumour suppressing genes, activation of the TGF-β/MAPK pathway, and regulation of cell differentiation and the cell cycle. These results help to elucidate the molecular mechanism underlying GaAs-induced pulmonary injury.

Gallium arsenide (GaAs) leaching behavior and surface chemistry changes in response to pH and O2

Gallium arsenide (GaAs) is a material widely used in electronic devices. Disposal of electronic waste containing GaAs in municipal solid waste landfills raises concerns about the public health and ecological risks associated with the potential release of toxic arsenic (As) species. In this study, different tests were performed to investigate the leaching behavior of particulate GaAs in aqueous solutions. In the U.S. Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET), the concentrations of As released from the GaAs particles were about 2.6-2.8-fold higher than the regulatory limit (5 mg/L). A much higher As concentration (72 mg/L), accounting for as much as 15.4% of the initial As in GaAs, was solubilized in a pH-7.6 synthetic landfill leachate under ambient atmosphere after 120 days. Additional tests performed to evaluate the dissolution of GaAs under a range of redox conditions, pH levels, ionic strength, and presence of organic constituents commonly found in landfills revealed that oxic environments and mildly alkaline conditions (pH 8.1-8.5) promote release of As (chiefly arsenite) and gallium species to the surrounding aqueous environment. The rate of As release in long-term exposure experiments was initially constant but later progressively diminished, likely due to the formation of a passivating layer on the surface of GaAs consisting of corrosion products rich in poorly soluble gallium oxides (Ga₂O₃ and Ga(OH)₃). This hypothesis was confirmed by surface analysis of GaAs particles subjected to leaching using X-ray photoelectron spectroscopy (XPS). These findings suggest that further research is needed to assess the potential release of toxic As from electronic waste in municipal landfills.

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (<100 nm) particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review

The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding arsenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolites, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the arsenic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial research.

In vitro toxicity of indium arsenide to alveolar macrophages evaluated by magnetometry, cytochemistry and morphological analysis

The present study was conducted to clarify the toxicity of Indium arsenide (InAs) particles to alveolar macrophages of hamsters by cytomagnetometry, enzyme release assays and morphological examinations. One million alveolar macrophages obtained from hamsters were exposed to 60 microg of ferrosoferric oxide and 2, 4, 10 and 20 microg of InAs particles. Relaxation, which is the rapid decline of strength of the remanent magnetic fields radiating from the alveolar macrophages, was insignificantly delayed and decay constants were not changed due to exposure to such doses of InAs. Because the relaxation is thought to be associated with the cytoskeleton, the exposure to InAs may not have impaired their motor function. An LDH release assay and morphological findings indicate slight damage to macrophages. DNA electrophoresis and the TUNEL method revealed neither necrotic changes nor apoptotic changes. Thus, InAs particles at such doses hardly cause cytostructural changes and cell death.

Selenium effects on gallium arsenide induced biochemical and immunotoxicological changes in rats

The influence of selenium (6.3 and 12.6 micromol/kg, intraperitoneally) on the disposition of gallium and arsenic and a few gallium arsenide (GaAs) sensitive biochemical variables was studied in male rats. Concomitant administration of Se and GaAs (70 micromol/kg, orally, 5 days a week for 4 weeks) significantly prevented the accumulation of arsenic while, the gallium concentration reduced moderately in the soft organs. The biochemical (haematopoietic and liver) and immunological variables however, responded less favorably to selenium administration. Most of the protection was however observed with the dose of 12.6 micromol rather than at 6.3 micromol. The results thus suggest a few beneficial effects of selenium in preventing the appearance of signs of GaAs toxicity like preventing inhibition of blood delta-aminolevulinic acid dehydratase (ALAD), hepatic malondialdehyde (MDA) formation and the accumulation of gallium and arsenic concentration.

Evidence for arsenic as the immunosuppressive component of gallium arsenide

Gallium arsenide (GaAs) has been shown previously to suppress the in vivo antibody-forming cell (AFC) response to sheep erythrocytes (SRBC) when administered intratracheally at concentrations between 50 and 200 mg/kg. In the present studies, direct addition of GaAs to in vitro-generated antibody cultures resulted in dose-dependent suppression of the primary antibody response, and was only seen when GaAs was added within 36 hr following immunization. Using atomic absorption spectrophotometry on tissue samples from mice exposed to 200 mg/kg GaAs, arsenic concentrations were found to peak in the spleen at 24 hr and decline, whereas gallium concentrations continue to rise through 14 days. Concentrations of each metal in the spleen at 24 hr are comparable to the concentrations achieved for each metal when GaAs is added at 25 microM to the in vitro model system. The 24 hr time point was chosen for comparison because all in vivo-in vitro studies were conducted using spleens from mice 24 hr after GaAs exposure. NaAsO2 and Ga(NO3)3 suppressed the AFC response dose-dependently, and in a time-dependent manner similar to GaAs when added to the in vitro system. However, based on IC50 values for each salt, the role of the gallium component in the immunosuppression appears weak. Oxalic acid (OA) and meso-2,3-dimercaptosuccinic acid (DMSA), chelators of gallium and arsenic respectively, were added to cultures with GaAs to confirm that arsenic was the primary immunosuppressive component. DMSA dose-dependently blocked GaAs-induced immunosuppression in vitro, while OA had no effect. The metal-binding compounds were determined to be specific for the metals used in these studies and did not cross-react with one another. DMSA was evaluated for its ability to prevent suppression of the AFC response in splenocytes from GaAs-exposed mice and was able to block GaAs-induced suppression of the AFC response when given sc every 4 hr beginning 1 hr prior to GaAs exposure. These data indicate that the arsenic component of GaAs is the major contributor to the GaAs-induced immunosuppression and that this effect occurs within the first 36 hr of the 5-day culture period in a concentration-dependent manner.