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Wang ZJ, Kong X, Huang Y, Li J, Bao L, Cao K, Hu Y, Cai J, Wang L, Chen H, Wu Y, Zhang Y, Pang F, Cheng Z, Babor P, Kolibal M, Liu Z, Chen Y, Zhang Q, Cui Y, Liu K, Yang H, Bao X, Gao HJ, Liu Z, Ji W, Ding F, Willinger MG. Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals. NATURE MATERIALS 2024; 23:331-338. [PMID: 37537355 DOI: 10.1038/s41563-023-01632-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Accepted: 07/10/2023] [Indexed: 08/05/2023]
Abstract
The properties of two-dimensional (2D) van der Waals materials can be tuned through nanostructuring or controlled layer stacking, where interlayer hybridization induces exotic electronic states and transport phenomena. Here we describe a viable approach and underlying mechanism for the assisted self-assembly of twisted layer graphene. The process, which can be implemented in standard chemical vapour deposition growth, is best described by analogy to origami and kirigami with paper. It involves the controlled induction of wrinkle formation in single-layer graphene with subsequent wrinkle folding, tearing and re-growth. Inherent to the process is the formation of intertwined graphene spirals and conversion of the chiral angle of 1D wrinkles into a 2D twist angle of a 3D superlattice. The approach can be extended to other foldable 2D materials and facilitates the production of miniaturized electronic components, including capacitors, resistors, inductors and superconductors.
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Affiliation(s)
- Zhu-Jun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
- School of Natural Sciences, Technical University Munich, Munich, Germany.
- Center for Transformative Science, ShanghaiTech University, Shanghai, China.
| | - Xiao Kong
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
| | - Yuan Huang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China
| | - Jun Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Kecheng Cao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Yuxiong Hu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Jun Cai
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Lifen Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Hui Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Yueshen Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Yiwen Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Fei Pang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, China
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, China
| | - Petr Babor
- Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Brno, Czech Republic
- Central European Institute of Technology (CEITEC), Brno University of Technology, Brno, Czech Republic
| | - Miroslav Kolibal
- Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Brno, Czech Republic
- Central European Institute of Technology (CEITEC), Brno University of Technology, Brno, Czech Republic
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China
- Department of Physics, University of Oxford, Oxford, UK
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Qiang Zhang
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, China
| | - Yi Cui
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
| | - Haitao Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of the Chinese Academy of Sciences, Beijing, China
- CAS Center for Excellence in Topological Quantum Computation, University of the Chinese Academy of Sciences, Beijing, China
| | - Zhi Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Center for Transformative Science, ShanghaiTech University, Shanghai, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, China.
| | - Feng Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
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Tan J, Zhang X, Liu W, He X, Zhao M. Strain-induced tunable negative differential resistance in triangle graphene spirals. NANOTECHNOLOGY 2018; 29:205202. [PMID: 29473828 DOI: 10.1088/1361-6528/aab1d9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Using non-equilibrium Green's function formalism combined with density functional theory calculations, we investigate the significant changes in electronic and transport properties of triangle graphene spirals (TGSs) in response to external strain. Tunable negative differential resistance (NDR) behavior is predicted. The NDR bias region, NDR width, and peak-to-valley ratio can be well tuned by external strain. Further analysis shows that these peculiar properties can be attributed to the dispersion widths of the p z orbitals. Moreover, the conductance of TGSs is very sensitive to the applied stress, which is promising for applications in nanosensor devices. Our findings reveal a novel approach to produce tunable electronic devices based on graphene spirals.
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Affiliation(s)
- Jie Tan
- Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, Guangdong, People's Republic of China. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong, People's Republic of China
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Abstract
Traditional inductors in modern electronics consume excessive areas in the integrated circuits. Carbon nanostructures can offer efficient alternatives if the recognized high electrical conductivity of graphene can be properly organized in space to yield a current-generated magnetic field that is both strong and confined. Here we report on an extraordinary inductor nanostructure naturally occurring as a screw dislocation in graphitic carbons. Its elegant helicoid topology, resembling a Riemann surface, ensures full covalent connectivity of all graphene layers, joined in a single layer wound around the dislocation line. If voltage is applied, electrical currents flow helically and thus give rise to a very large (∼1 T at normal operational voltage) magnetic field and bring about superior (per mass or volume) inductance, both owing to unique winding density. Such a solenoid of small diameter behaves as a quantum conductor whose current distribution between the core and exterior varies with applied voltage, resulting in nonlinear inductance.
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Affiliation(s)
- Fangbo Xu
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Henry Yu
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Arta Sadrzadeh
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States
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