Electronic structure and magnetic properties of Co-doped CeO(2): based on first principle calculation

A CeO2 Semiconductor as a Photocatalytic and Photoelectrocatalytic Material for the Remediation of Pollutants in Industrial Wastewater: A Review

The direct discharge of industrial wastewater into the environment results in serious contamination. Photocatalytic treatment with the application of sunlight and its enhancement by coupling with electrocatalytic degradation offers an inexpensive and green technology enabling the total removal of refractory pollutants such as surfactants, pharmaceuticals, pesticides, textile dyes, and heavy metals, from industrial wastewater. Among metal oxide—semiconductors, cerium dioxide (CeO2) is one of the photocatalysts most commonly applied in pollutant degradation. CeO2 exhibits promising photocatalytic activity. Nonetheless, the position of conduction bands (CB) and valence bands (VB) in CeO2 limits its application as an efficient photocatalyst utilizing solar energy. Its photocatalytic activity in wastewater treatment can be improved by various modification techniques, including changes in morphology, doping with metal cation dopants and non-metal dopants, coupling with other semiconductors, and combining it with carbon supporting materials. This paper presents a general overview of CeO2 application as a single or composite photocatalyst in the treatment of various pollutants. The photocatalytic characteristics of CeO2 and its composites are described. The main photocatalytic reactions with the participation of CeO2 under UV and VIS irradiation are presented. This review summarizes the existing knowledge, with a particular focus on the main experimental conditions employed in the photocatalytic and photoelectrocatalytic degradation of various pollutants with the application of CeO2 as a single and composite photocatalyst.

Theoretical Studies on the Stability and Reactivity of the Metal-Doped CeO2(100) Surface: Toward H2 Dissociation and Oxygen Vacancy Formation

Surface doping is a common method to improve the performance of nanostructured materials. Different dopants will affect the structure and catalytic reactivity of the support. For a comprehensive understanding of the doping effects of metals doped into CeO₂, we conducted density functional theory (DFT) studies on the stabilities and geometry structures of transition-metal atoms (M = Fe, Co, Ni, Cu; Ru, Rh, Pd, Ag; Os, Ir, Pt, Au) doped into CeO₂(111), (110), and (100) surfaces. Moreover, the reactivity for H₂ dissociation and oxygen vacancy formation are systematically investigated on M-doped CeO₂(100) surfaces. The greater the binding energies of doped M atoms on the CeO₂ surface, the more difficult the formation of oxygen vacancies. The doped Co and Ir atoms do not directly participate in H₂ activation but serve as a promoter to make the H-H bond to break easily. The Cu, Ru, Pd, Ag, Pt, and Au atoms could act as the catalytically active center for H₂ dissociation and greatly reduce the activation energy barrier. Besides, it is easier to generate H₂O (W^M) and a surface oxygen vacancy from the intermediate H2^M/H4^M than from H3^M/H5^M, which is related to the acid-base interaction between H_Ce/M* and H_O* in H2^M/H4^M. This work could provide theoretical insights into the atomic structure characteristics of the transition-metal-doped CeO₂(100) surface and give ideas for the design of hydrogenation catalysts.

Charge distribution near bulk oxygen vacancies in cerium oxides

Understanding the electronic charge distribution around oxygen vacancies in transition metal and rare earth oxides is a scientific challenge of considerable technological importance. We show how significant information about the charge distribution around vacancies in cerium oxide can be gained from a study of high resolution crystal structures of higher order oxides which exhibit ordering of oxygen vacancies. Specifically, we consider the implications of a bond valence sum analysis of Ce₇O₁₂ and Ce₁₁O₂₀. To illuminate our analysis we show alternative representations of the crystal structures in terms of orderly arrays of coordination defects and in terms of fluorite-type modules. We found that in Ce₇O₁₂, the excess charge resulting from removal of an oxygen atom delocalizes among all three triclinic Ce sites closest to the O vacancy. In Ce₁₁O₂₀, the charge localizes on the next nearest neighbour Ce atoms. Our main result is that the charge prefers to distribute itself so that it is farthest away from the O vacancies. This contradicts the standard picture of charge localization which assumes that each of the two excess electrons localizes on one of the cerium ions nearest to the vacancy. This standard picture is assumed in most calculations based on density functional theory (DFT). Based on the known crystal structure of Pr₆O₁₁, we also predict that the charge in Ce₆O₁₁ will be found in the second coordination shell of the O vacancy. We also extend the analysis to the Magnéli phases of titanium and vanadium oxides (M(n)O(₂n₋₁), where M = Ti, V) and consider the problem of metal-insulator transitions (MIT) in these oxides. We found that the bond valence analysis may provide a useful predictive tool in structures where the MIT is accompanied by significant changes in the metal-oxygen bond lengths. Although this review focuses mainly on bulk cerium oxides with some extension to the Magnéli phases of titanium and vanadium, our approach to characterizing electronic properties of oxygen vacancies and the physical insights gained should also be relevant to surface defects and to other rare earth and transition metal oxides.

Intrinsic ferromagnetism in CeO(2): dispelling the myth of vacancy site localization mediated superexchange

Intrinsic ferromagnetism in CeO(2) is a source of controversy in the literature and has been linked to the excess electrons left over upon oxygen vacancy formation on Ce sites neighbouring the vacancy. A recent theoretical study (Han et al 2009 Phys. Rev. B 79 100403) concluded that increased vacancy concentration changes the localization behaviour of CeO(2), resulting in some degree of charge localization in the vacancy site itself, which leads to superexchange and polarization effects that enhance the stability of ferromagnetism. In this report, we show conclusively that oxygen vacancy concentrations of up to 12.5% do not cause localization in the vacancy site, and that this is not responsible for any enhanced ferromagnetism. Investigation of oxygen vacancies on the (111), (110) and (100) low index surfaces also show no evidence for ferromagnetic preference.