Multiferroic thin-film integration onto semiconductor devices

Atomic-scale structure of ZrO2: Formation of metastable polymorphs

Metastable phases can exist within local minima in the potential energy landscape when they are kinetically "trapped" by various processing routes, such as thermal treatment, grain size reduction, chemical doping, interfacial stress, or irradiation. Despite the importance of metastable materials for many technological applications, little is known about the underlying structural mechanisms of the stabilization process and atomic-scale nature of the resulting defective metastable phase. Investigating ion-irradiated and nanocrystalline zirconia with neutron total scattering experiments, we show that metastable tetragonal ZrO2 consists of an underlying structure of ferroelastic, orthorhombic nanoscale domains stabilized by a network of domain walls. The apparent long-range tetragonal structure that can be recovered to ambient conditions is only the configurational ensemble average of the underlying orthorhombic domains. This structural heterogeneity with a distinct short-range order is more broadly applicable to other nonequilibrium materials and provides insight into the synthesis and recovery of functional metastable phases with unique physical and chemical properties.

Magnetoelectric Composites: Applications, Coupling Mechanisms, and Future Directions

Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed. Ways to enhance the ME coupling and other physical properties are also demonstrated. Finally, emphasis is given to the important open questions and future directions in this field, where new breakthroughs could have a significant impact in transforming scientific discoveries to practical device applications, which can be well-controlled both magnetically and electrically.

Bidimensional perovskite systems for spintronic applications

The half-metallic behavior of the perovskite Sr₂FeMoO₆ (SFMO) suggests that this material could be used in spintronic applications. Indeed, SFMO could be an attractive material for multiple applications due to the possibility that its electronic properties could be changed by modifying its spatial confinement or the relative contents of its constituent transition metals. However, there are no reports of theoretical studies on the properties of confined SFMOs with different transition metal contents. In this work, we studied the electronic properties of SFMO slabs using spin-polarized first-principles density functional theory along with the Hubbard-corrected local density approximation and a supercell scheme. We modeled three insulated SFMO slabs with Fe:Mo atomic ratios of 1:1, 1:0, and 0:1; all with free surfaces parallel to the (001) crystal plane. The results show that the half-metallicity of the SFMO is lost upon confinement and the material becomes a conductor, regardless of the ratio of Fe to Mo. It was also observed that the magnetic moment of the slab is strongly influenced by the oxygen atoms. These results could prove useful in attempts to apply SFMOs in fields other than spintronics. Graphical abstract Losing the metallic behaviour: density of states changes, around the Fermi level, due to the Fe/Mo ratio for bidimensional perovskite systems.

Pressure and strain effects of hexagonal rare-earth manganites: a first-principles study

We have investigated the structural, electrical and magnetic properties as well as the phonon modes of hexagonal rare-earth manganites (RMnO3, R  =  Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm and Lu) under chemical pressure, hydrostatic pressure and epitaxial strain by first-principles calculations. The magnetic ground state of RMnO3 is found to have Γ4 magnetic configuration and to be stable under all considered external conditions. In contrast, the K3 phonon mode, which is the primary order parameter and responsible for the 'improper ferroelectricity', is greatly influenced by pressure and epitaxial strain. Consequently, the electric polarization is enhanced by 56.7% when the chemical pressure increases from R  =  Pr to R  =  Lu. The hydrostatic pressure can also improve the polarization to a certain degree, e.g. by 14.7% from 0 GPa to 40 GPa in LuMnO3. Finally, the dependence of polarization on the epitaxial strain is also given, revealing that the compressive strain could promote the ferroelectricity while tensile strain will suppress it.

The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures

Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a ferroelectric thin film is modified by a magnetic field. Ferroelectric BaTiO3 (BTO) and ferromagnetic CoFe2O4 (CFO) oxide thin films have been used to create epitaxial FE/FM and FM/FE heterostructures on SrTiO3(001) substrates buffered with metallic SrRuO3. It will be shown that large ferroelectric polarization and DME can be obtained by appropriate selection of the stacking order of the FE and FM films and their relative thicknesses. The dielectric permittivity, at the structural transitions of BTO, is strongly modified (up to 36%) when measurements are performed under a magnetic field. Due to the insulating nature of the ferromagnetic layer and the concomitant absence of the electric-field effect, the observed DME effect solely results from the magnetostrictive response of CFO elastically coupled to the BTO layer. These findings show that appropriate architecture and materials selection allow overcoming substrate-induced clamping in multiferroic multi-layered films.

Emerging memories: resistive switching mechanisms and current status

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Property coupling at interfaces between active materials is a rich source of functionality, if defect densities are low, interfaces are smooth and the microstructure is featureless. Conventional synthesis techniques generally fail to achieve this when materials have highly dissimilar structure, symmetry and bond type-precisely when the potential for property engineering is most pronounced. Here we present a general synthesis methodology, involving systematic control of the chemical boundary conditions in situ, by which the crystal habit, and thus growth mode, can be actively engineered. In so doing, we establish the capability for layer-by-layer deposition in systems that otherwise default to island formation and grainy morphology. This technique is demonstrated via atomically smooth {111} calcium oxide films on (0001) gallium nitride. The operative surfactant-based mechanism is verified by temperature-dependent predictions from ab initio thermodynamic calculations. Calcium oxide films with smooth morphology exhibit a three order of magnitude enhancement of insulation resistance.