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Turchenko VA, Trukhanov SV, Kostishin VG, Damay F, Porcher F, Klygach DS, Vakhitov MG, Lyakhov D, Michels D, Bozzo B, Fina I, Almessiere MA, Slimani Y, Baykal A, Zhou D, Trukhanov AV. Features of structure, magnetic state and electrodynamic performance of SrFe 12-xIn xO 19. Sci Rep 2021; 11:18342. [PMID: 34526572 PMCID: PMC8443609 DOI: 10.1038/s41598-021-97684-8] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 08/27/2021] [Indexed: 11/15/2022] Open
Abstract
Indium-substituted strontium hexaferrites were prepared by the conventional solid-phase reaction method. Neutron diffraction patterns were obtained at room temperature and analyzed using the Rietveld methods. A linear dependence of the unit cell parameters is found. In3+ cations are located mainly in octahedral positions of 4fVI and 12 k. The average crystallite size varies within 0.84–0.65 μm. With increasing substitution, the TC Curie temperature decreases monotonically down to ~ 520 K. ZFC and FC measurements showed a frustrated state. Upon substitution, the average and maximum sizes of ferrimagnetic clusters change in the opposite direction. The Mr remanent magnetization decreases down to ~ 20.2 emu/g at room temperature. The Ms spontaneous magnetization and the keff effective magnetocrystalline anisotropy constant are determined. With increasing substitution, the maximum of the ε/ real part of permittivity decreases in magnitude from ~ 3.3 to ~ 1.9 and shifts towards low frequencies from ~ 45.5 GHz to ~ 37.4 GHz. The maximum of the tg(α) dielectric loss tangent decreases from ~ 1.0 to ~ 0.7 and shifts towards low frequencies from ~ 40.6 GHz to ~ 37.3 GHz. The low-frequency maximum of the μ/ real part of permeability decreases from ~ 1.8 to ~ 0.9 and slightly shifts towards high frequencies up to ~ 34.7 GHz. The maximum of the tg(δ) magnetic loss tangent decreases from ~ 0.7 to ~ 0.5 and shifts slightly towards low frequencies from ~ 40.5 GHz to ~ 37.7 GHz. The discussion of microwave properties is based on the saturation magnetization, natural ferromagnetic resonance and dielectric polarization types.
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Affiliation(s)
- V A Turchenko
- Joint Institute for Nuclear Research, 6 Joliot-Curie Str., 141980, Dubna, Russia.,South Ural State University, 76, Lenin Av., 454080, Chelyabinsk, Russia.,Donetsk Institute of Physics and Technology Named After O.O. Galkin of the NASU, 46 Nauki Av., Kiev, 03680, Ukraine
| | - S V Trukhanov
- South Ural State University, 76, Lenin Av., 454080, Chelyabinsk, Russia. .,SSPA "Scientific and Practical Materials Research Centre of NAS of Belarus", 19 P. Brovki str., 220072, Minsk, Belarus. .,National University of Science and Technology "MISiS", Leninsky av., 4, Moscow, Russia, 119049.
| | - V G Kostishin
- National University of Science and Technology "MISiS", Leninsky av., 4, Moscow, Russia, 119049
| | - F Damay
- Laboratoire Leon Brillouin, UMR12 CEA-CNRS, Bât. 563 CEA Saclay, 91191, Gif sur Yvette Cedex, France
| | - F Porcher
- Laboratoire Leon Brillouin, UMR12 CEA-CNRS, Bât. 563 CEA Saclay, 91191, Gif sur Yvette Cedex, France
| | - D S Klygach
- South Ural State University, 76, Lenin Av., 454080, Chelyabinsk, Russia.,Ural Federal University named after the First President of Russia B.N. Yeltsin, Yekaterinburg, Russia, 620002
| | - M G Vakhitov
- South Ural State University, 76, Lenin Av., 454080, Chelyabinsk, Russia.,Ural Federal University named after the First President of Russia B.N. Yeltsin, Yekaterinburg, Russia, 620002
| | - D Lyakhov
- Computer, Electrical and Mathematical Science and Engineering Division, 4700 King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - D Michels
- Computer, Electrical and Mathematical Science and Engineering Division, 4700 King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - B Bozzo
- Institut de Ciencia de Materials de Barcelona-CSIC, Campus de la UAB, 08193, Bellaterra, Barcelona, Spain
| | - I Fina
- Institut de Ciencia de Materials de Barcelona-CSIC, Campus de la UAB, 08193, Bellaterra, Barcelona, Spain
| | - M A Almessiere
- Department of Biophysics, Institute for Research and Medical Consultations (IRMC), Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam, 31441, Saudi Arabia.,Department of Physics, College of Science, Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam, 31441, Saudi Arabia
| | - Y Slimani
- Department of Biophysics, Institute for Research and Medical Consultations (IRMC), Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam, 31441, Saudi Arabia
| | - A Baykal
- Department of Nanomedicine Research, Institute for Research and Medical Consultations (IRMC), Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam, 31441, Saudi Arabia
| | - D Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - A V Trukhanov
- South Ural State University, 76, Lenin Av., 454080, Chelyabinsk, Russia.,SSPA "Scientific and Practical Materials Research Centre of NAS of Belarus", 19 P. Brovki str., 220072, Minsk, Belarus.,National University of Science and Technology "MISiS", Leninsky av., 4, Moscow, Russia, 119049
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Galceran R, Fina I, Cisneros-Fernández J, Bozzo B, Frontera C, López-Mir L, Deniz H, Park KW, Park BG, Balcells L, Martí X, Jungwirth T, Martínez B. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn. Sci Rep 2016; 6:35471. [PMID: 27762278 PMCID: PMC5071853 DOI: 10.1038/srep35471] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2016] [Accepted: 09/28/2016] [Indexed: 11/09/2022] Open
Abstract
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.
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Affiliation(s)
- R Galceran
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain.,Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau 91767, France
| | - I Fina
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain.,Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - J Cisneros-Fernández
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain
| | - B Bozzo
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain
| | - C Frontera
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain
| | - L López-Mir
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain
| | - H Deniz
- Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
| | - K-W Park
- Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
| | - B-G Park
- Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea
| | - Ll Balcells
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain
| | - X Martí
- Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., CZ-16253 Praha 6, Czech Republic
| | - T Jungwirth
- Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., CZ-16253 Praha 6, Czech Republic.,School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - B Martínez
- Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain
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3
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Fina I, Marti X, Yi D, Liu J, Chu JH, Rayan-Serrao C, Suresha S, Shick AB, Zelezný J, Jungwirth T, Fontcuberta J, Ramesh R. Anisotropic magnetoresistance in an antiferromagnetic semiconductor. Nat Commun 2014; 5:4671. [PMID: 25204755 DOI: 10.1038/ncomms5671] [Citation(s) in RCA: 114] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2013] [Accepted: 07/11/2014] [Indexed: 11/09/2022] Open
Abstract
Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the current-perpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.
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Affiliation(s)
- I Fina
- 1] Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, E-08193 Barcelona, Spain [2] Experimental Department II, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
| | - X Marti
- 1] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [2] Centre d'Investigació en Nanociència i Nanotecnologia (CIN2), CSIC-ICN, 08193 Barcelona, Spain [3] Department of Spintronics and Nanoelectronics, Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
| | - D Yi
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - J Liu
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - J H Chu
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - C Rayan-Serrao
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - S Suresha
- National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - A B Shick
- Department of Condensed Matter Theory, Institute of Physics ASCR, v.v.i., Na Slovance 2, 182 21 Praha 8, Czech Republic
| | - J Zelezný
- Department of Spintronics and Nanoelectronics, Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
| | - T Jungwirth
- 1] Department of Spintronics and Nanoelectronics, Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - J Fontcuberta
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, E-08193 Barcelona, Spain
| | - R Ramesh
- 1] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [2] Department of Physics, University of California, Berkeley, California 94720, USA [3] National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [4]
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4
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Marti X, Fina I, Frontera C, Liu J, Wadley P, He Q, Paull RJ, Clarkson JD, Kudrnovský J, Turek I, Kuneš J, Yi D, Chu JH, Nelson CT, You L, Arenholz E, Salahuddin S, Fontcuberta J, Jungwirth T, Ramesh R. Room-temperature antiferromagnetic memory resistor. Nat Mater 2014; 13:367-374. [PMID: 24464243 DOI: 10.1038/nmat3861] [Citation(s) in RCA: 146] [Impact Index Per Article: 14.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2013] [Accepted: 12/10/2013] [Indexed: 06/03/2023]
Abstract
The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.
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Affiliation(s)
- X Marti
- 1] Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA [2] Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, 12116 Praha 2, Czech Republic [3] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
| | - I Fina
- 1] Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra E-08193, Spain [2] Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany
| | - C Frontera
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra E-08193, Spain
| | - Jian Liu
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - P Wadley
- 1] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - Q He
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - R J Paull
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA
| | - J D Clarkson
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA
| | - J Kudrnovský
- Institute of Physics ASCR, v.v.i., Na Slovance 2, 182 21 Praha 8, Czech Republic
| | - I Turek
- 1] Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, 12116 Praha 2, Czech Republic [2] Institute of Physics of Materials ASCR, v.v.i., Zizkova 22, Brno 616 62, Czech Republic
| | - J Kuneš
- Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
| | - D Yi
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - J-H Chu
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - C T Nelson
- National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - L You
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA
| | - E Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - S Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA
| | - J Fontcuberta
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra E-08193, Spain
| | - T Jungwirth
- 1] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - R Ramesh
- 1] Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA [2] Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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5
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Radaelli G, Petti D, Plekhanov E, Fina I, Torelli P, Salles BR, Cantoni M, Rinaldi C, Gutiérrez D, Panaccione G, Varela M, Picozzi S, Fontcuberta J, Bertacco R. Electric control of magnetism at the Fe/BaTiO₃ interface. Nat Commun 2014; 5:3404. [PMID: 24584546 PMCID: PMC3942656 DOI: 10.1038/ncomms4404] [Citation(s) in RCA: 160] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2013] [Accepted: 02/07/2014] [Indexed: 11/30/2022] Open
Abstract
Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO3 system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO3 dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnetoelectric coupling in the Fe/BaTiO3 system. At this interface, an ultrathin oxidized iron layer exists, whose magnetization can be electrically and reversibly switched on-off at room-temperature by reversing the BaTiO3 polarization. The suppression / recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BaTiO3 produces on the exchange coupling constants in the interfacial oxidized Fe layer. The observed giant magnetoelectric response holds potential for optimizing interfacial magnetoelectric coupling in view of efficient, low-power spintronic devices.
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Affiliation(s)
- G Radaelli
- LNESS-Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
| | - D Petti
- LNESS-Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
| | - E Plekhanov
- Consiglio Nazionale delle Ricerche, CNR-SPIN, 67100 L'Aquila, Italy
| | - I Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia, Spain
| | - P Torelli
- Consiglio Nazionale delle Ricerche, CNR - IOM, Laboratorio TASC, I-34149 Trieste, Italy
| | - B R Salles
- 1] Consiglio Nazionale delle Ricerche, CNR - IOM, Laboratorio TASC, I-34149 Trieste, Italy [2] Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro, Brazil
| | - M Cantoni
- LNESS-Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
| | - C Rinaldi
- LNESS-Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
| | - D Gutiérrez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia, Spain
| | - G Panaccione
- Consiglio Nazionale delle Ricerche, CNR - IOM, Laboratorio TASC, I-34149 Trieste, Italy
| | - M Varela
- 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA [2] Departamento Fisica Aplicada III, Universidad Complutense de Madrid, 28040 Madrid, Spain
| | - S Picozzi
- Consiglio Nazionale delle Ricerche, CNR-SPIN, 67100 L'Aquila, Italy
| | - J Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia, Spain
| | - R Bertacco
- LNESS-Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, 22100 Como, Italy
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6
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Fina I, Dix N, Rebled JM, Gemeiner P, Martí X, Peiró F, Dkhil B, Sánchez F, Fàbrega L, Fontcuberta J. The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures. Nanoscale 2013; 5:8037-8044. [PMID: 23872985 DOI: 10.1039/c3nr01011b] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling of the ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a ferroelectric thin film is modified by a magnetic field. Ferroelectric BaTiO3 (BTO) and ferromagnetic CoFe2O4 (CFO) oxide thin films have been used to create epitaxial FE/FM and FM/FE heterostructures on SrTiO3(001) substrates buffered with metallic SrRuO3. It will be shown that large ferroelectric polarization and DME can be obtained by appropriate selection of the stacking order of the FE and FM films and their relative thicknesses. The dielectric permittivity, at the structural transitions of BTO, is strongly modified (up to 36%) when measurements are performed under a magnetic field. Due to the insulating nature of the ferromagnetic layer and the concomitant absence of the electric-field effect, the observed DME effect solely results from the magnetostrictive response of CFO elastically coupled to the BTO layer. These findings show that appropriate architecture and materials selection allow overcoming substrate-induced clamping in multiferroic multi-layered films.
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Affiliation(s)
- I Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Catalonia, Spain.
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7
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Fina I, Fàbrega L, Martí X, Sánchez F, Fontcuberta J. Chiral domains in cycloidal multiferroic thin films: switching and memory effects. Phys Rev Lett 2011; 107:257601. [PMID: 22243112 DOI: 10.1103/physrevlett.107.257601] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2011] [Indexed: 05/31/2023]
Abstract
Cycloidal magnetic order occurring in some AMnO(3) perovskites is known to induce ferroelectricity. The polarization is perpendicular to the propagation vector direction of the cycloid and its chirality, and therefore it is directly related to the chiral domain structure. We show that the switching process of chiral domains is sensitively dependent on the magnetoelectric history of the sample. Moreover, by appropriate field cycling, magnetic order can display partial chiral memory. We argue that memory results from electric field coupling of cycloidal domain and nucleation and pinning of chiral domain walls, much like the domain structure in other ferroic systems.
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Affiliation(s)
- I Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Catalonia, Spain.
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8
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Skumryev V, Laukhin V, Fina I, Martí X, Sánchez F, Gospodinov M, Fontcuberta J. Magnetization reversal by electric-field decoupling of magnetic and ferroelectric domain walls in multiferroic-based heterostructures. Phys Rev Lett 2011; 106:057206. [PMID: 21405430 DOI: 10.1103/physrevlett.106.057206] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2010] [Indexed: 05/30/2023]
Abstract
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO(3)) can be speedily reversed by electric-field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. As LuMnO(3) is not ferroelastic, our data conclusively show that this switching is not mediated by strain effects but is a unique electric-field driven decoupling of the ferroelectric and antiferromagnetic domain walls. Their distinct dynamics are essential for the observed magnetic switching.
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Affiliation(s)
- V Skumryev
- Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Catalonia, Spain
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