Labeling interacting configurations through an analysis of excitation dynamics in a resonant photoemission experiment: the case of rutile TiO2

Understanding the effects of Cr doping in rutile TiO2 by DFT calculations and X-ray spectroscopy

The effects of Cr on local environment and electronic structure of rutile TiO₂ are studied combining theoretical and experimental approaches. Neutral and negatively charged substitutional Cr impurities Cr_Ti⁰ and Cr_Ti¹⁻ as well as Cr-oxygen vacancy complex 2Cr_Ti + V_O are studied by the density functional theory (DFT) within the generalized gradient approximation (GGA) of Perdew-Burke-Ernzerhof (PBE) functional. Experimental results based on X-Ray absorption spectroscopy (XAS) and X-Ray photoelectron spectroscopy (XPS) performed on Cr doped TiO₂ at the Synchrotron facility were compared to the theoretical results. It is shown that the electrons of the oxygen vacancy tend to be localized at the t_2g states of the Cr ions in order to reach the stable oxidation state of Cr³⁺. Effects of Cr on crystal field (CF) and structural distortions in the rutile TiO₂ cell were analyzed by the DFT calculations and XAS spectra revealing that the CF and tetragonal distortions in TiO₂ are very sensitive to the concentration of Cr.

Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films

We report the study of anatase TiO₂(001)-oriented thin films grown by pulsed laser deposition on LaAlO₃(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti³⁺-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti³⁺ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti³⁺ only in a well-defined range of deposition pressure; outside this range, Ti³⁺ and the strength of the in-gap states are reduced.