Carbon nanotube Schottky diode: an atomic perspective

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.

Improved Electrophoretic Deposition of Vertical Single Wall Carbon Nanotubes with Nanoscopic Electrostatic Lenses

Under certain conditions, electrophoretic deposition (EPD) of single-wall carbon nanotubes (SWCNTs) onto metal at the base of nanoscale insulating windows can result in a single SWCNT per window, bonded at one end to the metal. During EPD charge, buildup on the insulator creates electrostatic lenses at the windows that control the trajectory of the SWCNTs. The aim is to develop a reproducible process for deposition of individual vertically oriented SWCNTs into each window to enable novel devices. The length of the SWCNTs is shown to be the most critical parameter in achieving results that could be used for devices. In particular, single nanotube deposition in windows by EPD was achieved with SWCNTs with lengths on the order of the window depth. By performing current vs voltage (IV) measurements against a platinum wire in a phosphate buffer and by modeling the data, the presence of the nanotube can be detected, the contact interface can be studied, and the nanotube’s viability for device applications can be determined. These results provide a basis for process integration of vertical SWCNTs using EPD.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

We have fabricated carbon nanotube and MoS₂ field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ_SB) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ_SB for both contact forms of CNT and MoS₂ devices; we found that the Φ_SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10⁴; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.