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Xu Z, Yang H, Song X, Chen Y, Yang H, Liu M, Huang Z, Zhang Q, Sun J, Liu L, Wang Y. Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications. NANOTECHNOLOGY 2021; 32:492001. [PMID: 34450606 DOI: 10.1088/1361-6528/ac21ed] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Accepted: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Charge density wave (CDW) is an intriguing physical phenomenon especially found in two-dimensional (2D) layered systems such as transition-metal dichalcogenides (TMDs). The study of CDW is vital for understanding lattice modification, strongly correlated electronic behaviors, and other related physical properties. This paper gives a review of the recent studies on CDW emerging in 2D TMDs. First, a brief introduction and the main mechanisms of CDW are given. Second, the interplay between CDW patterns and the related unique electronic phenomena (superconductivity, spin, and Mottness) is elucidated. Then various manipulation methods such as doping, applying strain, local voltage pulse to induce the CDW change are discussed. Finally, examples of the potential application of devices based on CDW materials are given. We also discuss the current challenge and opportunities at the frontier in this research field.
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Affiliation(s)
- Ziqiang Xu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Huixia Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Meng Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
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Wang C, Zhang W, Zhao Z, Wang Y, Gao P, Luo Y, Luo X. Plasmonic Structures, Materials and Lenses for Optical Lithography beyond the Diffraction Limit: A Review. MICROMACHINES 2016; 7:mi7070118. [PMID: 30404291 PMCID: PMC6189824 DOI: 10.3390/mi7070118] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2016] [Revised: 06/25/2016] [Accepted: 06/27/2016] [Indexed: 11/16/2022]
Abstract
The rapid development of nanotechnologies and sciences has led to the great demand for novel lithography methods allowing large area, low cost and high resolution nano fabrications. Characterized by unique sub-diffraction optical features like propagation with an ultra-short wavelength and great field enhancement in subwavelength regions, surface plasmon polaritons (SPPs), including surface plasmon waves, bulk plasmon polaritons (BPPs) and localized surface plasmons (LSPs), have become potentially promising candidates for nano lithography. In this paper, investigations into plasmonic lithography in the manner of point-to-point writing, interference and imaging were reviewed in detail. Theoretical simulations and experiments have demonstrated plasmonic lithography resolution far beyond the conventional diffraction limit, even with ultraviolet light sources and single exposure performances. Half-pitch resolution as high as 22 nm (~1/17 light wavelength) was observed in plasmonic lens imaging lithography. Moreover, not only the overview of state-of-the-art results, but also the physics behind them and future research suggestions are discussed as well.
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Affiliation(s)
- Changtao Wang
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
| | - Wei Zhang
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
| | - Zeyu Zhao
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
| | - Yanqin Wang
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
| | - Ping Gao
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
| | - Yunfei Luo
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
| | - Xiangang Luo
- State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China.
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Prasad B, Zhang W, Jian J, Wang H, Blamire MG. Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3079-3084. [PMID: 25845706 DOI: 10.1002/adma.201405147] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2014] [Revised: 03/12/2015] [Indexed: 06/04/2023]
Abstract
A highly unconventional bias-dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75 Sr0.25 MnO3 -based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR-bias dependence is more complex and reverses sign at higher bias.
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Affiliation(s)
- Bhagwati Prasad
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Wenrui Zhang
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA
| | - Jie Jian
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA
| | - Haiyan Wang
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas, 77843-3128, USA
| | - Mark G Blamire
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
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Prasad B, Egilmez M, Schoofs F, Fix T, Vickers ME, Zhang W, Jian J, Wang H, Blamire MG. Nanopillar spin filter tunnel junctions with manganite barriers. NANO LETTERS 2014; 14:2789-2793. [PMID: 24742375 DOI: 10.1021/nl500798b] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The potential of a manganite ferromagnetic insulator in the field of spin-filtering has been demonstrated. For this, an ultrathin film of Sm0.75Sr0.25MnO3 is integrated as a barrier in an epitaxial oxide nanopillar tunnel junction and a high spin polarization of up to 75% at 5 K has been achieved. A large zero-bias anomaly observed in the dynamic conductance at low temperatures is explained in terms of the Kondo scattering model. In addition, a decrease in spin polarization at low bias and hysteretic magneto-resistance at low temperatures are reported. The results open up new possibilities for spin-electronics and suggest exploration of other manganites-based materials for the room temperature spin-filter applications.
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Affiliation(s)
- Bhagwati Prasad
- Department of Materials Science and Metallurgy, University of Cambridge , 27 Charles Babbage Road, Cambridge, CB3 0FS, U.K
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Liu H, Wang B, Ke L, Deng J, Chum CC, Teo SL, Shen L, Maier SA, Teng J. High aspect subdiffraction-limit photolithography via a silver superlens. NANO LETTERS 2012; 12:1549-1554. [PMID: 22375712 DOI: 10.1021/nl2044088] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Photolithography is the technology of choice for mass patterning in semiconductor and data storage industries. Superlenses have demonstrated the capability of subdiffraction-limit imaging and been envisioned as a promising technology for potential nanophotolithography. Unfortunately, subdiffraction-limit patterns generated by current superlenses exhibited poor profile depth far below the requirement for photolithography. Here, we report an experimental demonstration of sub-50 nm resolution nanophotolithography via a smooth silver superlens with a high aspect profile of ~45 nm, as well as grayscale subdiffraction-limit three-dimensional nanopatterning. Theoretical analysis and simulation show that smooth interfaces play a critical role. Superlens-based lithography can be integrated with conventional UV photolithography systems to endow them with the capability of nanophotolithography, which could provide a cost-effective approach for large scale and rapid nanopatterning.
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Affiliation(s)
- Hong Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore 117602
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Blamire MG, Aziz A, Robinson JWA. Nanopillar junctions. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2011; 369:3198-3213. [PMID: 21727121 DOI: 10.1098/rsta.2010.0343] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The fabrication of nanopillar devices has been essential to the understanding and development of metallic spin electronics. This paper discusses the processes that can be used for the fabrication of such structures and the challenges in which they present, with particular emphasis on extreme sub-micrometre pillar structures suitable for the study of spin-transfer torque effects.
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Affiliation(s)
- M G Blamire
- Department of Materials Science, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
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Aziz A, Wessely OP, Ali M, Edwards DM, Marrows CH, Hickey BJ, Blamire MG. Nonlinear giant magnetoresistance in dual spin valves. PHYSICAL REVIEW LETTERS 2009; 103:237203. [PMID: 20366169 DOI: 10.1103/physrevlett.103.237203] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2009] [Indexed: 05/29/2023]
Abstract
Giant magnetoresistance (GMR) arises from differential scattering of the majority and minority spin electrons by a ferromagnet (FM) so that the resistance of a heterostructure depends on the relative magnetic orientation of the FM layers within it separated by nonmagnetic spacers. Here, we show that highly nonequilibrium spin accumulation in metallic heterostructures results in a current-dependent nonlinear GMR which is not predicted within the present understanding of GMR. The behavior can be explained by allowing the scattering asymmetries in an ultrathin FM layer to be current dependent.
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Affiliation(s)
- A Aziz
- Department of Materials Science, Cambridge University, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
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