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Cao X, Hu X, Qiu Z, Xu T, Yu Z, Li Z, Jin H, Xu B. Ultrasensitive FET biosensor chip based on self-assembled organic nanoporous membrane for femtomolar detection of Amyloid-β. Biomed Microdevices 2023; 25:25. [PMID: 37470844 DOI: 10.1007/s10544-023-00667-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 07/11/2023] [Indexed: 07/21/2023]
Abstract
Early diagnosis of Alzheimer's disease (AD) is critical for preventing disease progression, however, the diagnosis of AD remains challenging for most patients due to limitations of current sensing technologies. A common pathological feature found in AD-affected brains is the accumulation of Amyloid-β (Aβ) polypeptides, which lead to neurofibrillary tangles and neuroinflammatory plaques. Here, we developed a portable ultrasensitive FET biosensor chip based on a self-assembled nanoporous membrane for ultrasensitive detection of Aβ protein in complex environments. The microscale semiconductor channel was covered with a self-assembled organic nanoporous membrane modified by antibody molecules to pick up and amplify the Aβ protein signal. The nanoporous structure helps protect the sensitive channel from non-target proteins and improves its stability since no chemical functionalization process involved, largely reduces background noise of the sensing platform. When a bio-gated target is captured, the doping state of the polymer bulk could be tuned and amplified the strength of the weak signal, achieving ultrasensitive detecting performance (enabling the device to detect target protein less than 1 fg/ml in 1 µl sample). Moreover, the device simplifies the circuit connection by integrating all the connections on a 2 cm × 2 cm chip, avoiding expensive and complex manufacturing processes, and makes it usable for portable prognosis. We believe that this ultrasensitive, portable, low-cost Aβ sensor chip shows the great potential in the early diagnosis of AD and large-scale population screening applications.
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Affiliation(s)
- Xiaona Cao
- School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, Guangdong, P.R. China
- School of Biomedical Engineering, Sun Yat-sen University, Shenzhen Campus, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong, P.R. China
| | - Xiaoping Hu
- School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, Guangdong, P.R. China
- School of Biomedical Engineering, Sun Yat-sen University, Shenzhen Campus, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong, P.R. China
| | - Ziyi Qiu
- School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, Guangdong, P.R. China
| | - Ting Xu
- School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, Guangdong, P.R. China
- School of Biomedical Engineering, Sun Yat-sen University, Shenzhen Campus, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong, P.R. China
| | - Zhenhua Yu
- The First Affiliated Hospital, Sun Yat-sen University, 58 Zhongshan 2nd Rd, Yuexiu District, Guangzhou, Guangdong, P.R. China
| | - Zhe Li
- School of Biomedical Engineering, Sun Yat-sen University, Shenzhen Campus, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong, P.R. China.
| | - Huawei Jin
- The First Affiliated Hospital, Sun Yat-sen University, 58 Zhongshan 2nd Rd, Yuexiu District, Guangzhou, Guangdong, P.R. China.
| | - Bingzhe Xu
- School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, Guangdong, P.R. China.
- School of Biomedical Engineering, Sun Yat-sen University, Shenzhen Campus, No. 66, Gongchang Road, Guangming District, Shenzhen, Guangdong, P.R. China.
- Guangdong Provincial Key Laboratory of Sensor Technology and Biomedical Instrument, Sun Yat-Sen University, Guangzhou, China.
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Bhatt MD, Kim H, Kim G. Various defects in graphene: a review. RSC Adv 2022; 12:21520-21547. [PMID: 35975063 PMCID: PMC9347212 DOI: 10.1039/d2ra01436j] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 07/19/2022] [Indexed: 11/23/2022] Open
Abstract
Pristine graphene has been considered one of the most promising materials because of its excellent physical and chemical properties. However, various defects in graphene produced during synthesis or fabrication hinder its performance for applications such as electronic devices, transparent electrodes, and spintronic devices. Due to its intrinsic bandgap and nonmagnetic nature, it cannot be used in nanoelectronics or spintronics. Intrinsic and extrinsic defects are ultimately introduced to tailor electronic and magnetic properties and take advantage of their hidden potential. This article emphasizes the current advancement of intrinsic and extrinsic defects in graphene for potential applications. We also discuss the limitations and outlook for such defects in graphene.
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Affiliation(s)
| | - Heeju Kim
- Hybrid Materials Center, Sejong University Seoul 05006 Korea
- Department of Physics and Astronomy, Sejong University Seoul 05006 Korea
| | - Gunn Kim
- Hybrid Materials Center, Sejong University Seoul 05006 Korea
- Department of Physics and Astronomy, Sejong University Seoul 05006 Korea
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Mao LF, Ning H, Li X. Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors. NANOSCALE RESEARCH LETTERS 2015; 10:1039. [PMID: 26264688 PMCID: PMC4531885 DOI: 10.1186/s11671-015-1039-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/18/2015] [Accepted: 08/03/2015] [Indexed: 06/04/2023]
Abstract
We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.
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Affiliation(s)
- Ling-Feng Mao
- />School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing, 100083 China
| | - Huansheng Ning
- />School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing, 100083 China
| | - Xijun Li
- />Wenzhou Meta Optics Corporate Limited, Wenzhou, 325000 China
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Ding Z, Jiang J, Xing H, Shu H, Huang Y, Chen X, Lu W. The finite-size effect on the transport properties in edge-modified graphene nanoribbon-based molecular devices. J Comput Chem 2011; 32:1753-9. [PMID: 21351109 DOI: 10.1002/jcc.21760] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2010] [Revised: 12/29/2010] [Accepted: 12/30/2010] [Indexed: 11/11/2022]
Abstract
The size-dependence on the electronic and transport properties of the molecular devices of the edge-modified graphene nanoribbon (GNR) slices is investigated using density-functional theory and Green's function theory. Two edge-modifying functional group pairs are considered. Energy gap is found in all the GNR slices. The gap shows an exponential decrease with increasing the slice size of two vertical orientations in the two edge terminated cases, respectively. The tunneling probability and the number of conducting channel decreases with increasing the GNR-slices size in the junctions. The results indicate that the acceptor-donor pair edge modulation can improve the quantum conductance and decrease the finite-size effect on the transmission capability of the GNR slice-based molecular devices.
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Affiliation(s)
- Zongling Ding
- National Laboratory of Infrared Physics, Shanghai Institute for Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083, China
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