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Kim H, Lu K, Liu Y, Kum HS, Kim KS, Qiao K, Bae SH, Lee S, Ji YJ, Kim KH, Paik H, Xie S, Shin H, Choi C, Lee JH, Dong C, Robinson JA, Lee JH, Ahn JH, Yeom GY, Schlom DG, Kim J. Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene. ACS NANO 2021; 15:10587-10596. [PMID: 34081854 DOI: 10.1021/acsnano.1c03296] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.
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Affiliation(s)
- Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yunpeng Liu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hyun S Kum
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuan Qiao
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sang-Hoon Bae
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ki Hyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
| | - Saien Xie
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Chanyeol Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - June Hyuk Lee
- Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea
| | - Chengye Dong
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
- Leibniz-Institut für Kristallzüchtung, Berlin 12489, Germany
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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Chauvin A, Delacôte C, Molina-Luna L, Duerrschnabel M, Boujtita M, Thiry D, Du K, Ding J, Choi CH, Tessier PY, El Mel AA. Planar Arrays of Nanoporous Gold Nanowires: When Electrochemical Dealloying Meets Nanopatterning. ACS APPLIED MATERIALS & INTERFACES 2016; 8:6611-6620. [PMID: 26926232 DOI: 10.1021/acsami.5b11244] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Nanoporous materials are of great interest for various technological applications including sensors based on surface-enhanced Raman scattering, catalysis, and biotechnology. Currently, tremendous efforts are dedicated to the development of porous one-dimensional materials to improve the properties of such class of materials. The main drawback of the synthesis approaches reported so far includes (i) the short length of the porous nanowires, which cannot reach the macroscopic scale, and (ii) the poor organization of the nanostructures obtained by the end of the synthesis process. In this work, we report for the first time on a two-step approach allowing creating highly ordered porous gold nanowire arrays with a length up to a few centimeters. This two-step approach consists of the growth of gold/copper alloy nanowires by magnetron cosputtering on a nanograted silicon substrate, serving as a physical template, followed by a selective dissolution of copper by an electrochemical anodic process in diluted sulfuric acid. We demonstrate that the pore size of the nanowires can be tailored between 6 and 21 nm by tuning the dealloying voltage between 0.2 and 0.4 V and the dealloying time within the range of 150-600 s. We further show that the initial gold content (11 to 26 atom %) and the diameter of the gold/copper alloy nanowires (135 to 250 nm) are two important parameters that must carefully be selected to precisely control the porosity of the material.
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Affiliation(s)
- Adrien Chauvin
- Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS , 2 rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France
| | - Cyril Delacôte
- CEISAM, Université de Nantes, CNRS , 2 rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France
| | - Leopoldo Molina-Luna
- Department of Material- and Geosciences, Technische Universität Darmstadt , Alarich-Weiss-Strasse 2, 64287 Darmstadt, Germany
| | - Michael Duerrschnabel
- Department of Material- and Geosciences, Technische Universität Darmstadt , Alarich-Weiss-Strasse 2, 64287 Darmstadt, Germany
| | - Mohammed Boujtita
- CEISAM, Université de Nantes, CNRS , 2 rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France
| | - Damien Thiry
- Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS , 2 rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France
| | - Ke Du
- Department of Mechanical Engineering, Stevens Institute of Technology , Hoboken, New Jersey 07030, United States
| | - Junjun Ding
- Department of Mechanical Engineering, Stevens Institute of Technology , Hoboken, New Jersey 07030, United States
| | - Chang-Hwan Choi
- Department of Mechanical Engineering, Stevens Institute of Technology , Hoboken, New Jersey 07030, United States
| | - Pierre-Yves Tessier
- Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS , 2 rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France
| | - Abdel-Aziz El Mel
- Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS , 2 rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France
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El Mel AA, Achour A, Xu W, Choi CH, Gautron E, Angleraud B, Granier A, Le Brizoual L, Djouadi MA, Tessier PY. Hierarchical carbon nanostructure design: ultra-long carbon nanofibers decorated with carbon nanotubes. NANOTECHNOLOGY 2011; 22:435302. [PMID: 21971265 DOI: 10.1088/0957-4484/22/43/435302] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Hierarchical carbon nanostructures based on ultra-long carbon nanofibers (CNF) decorated with carbon nanotubes (CNT) have been prepared using plasma processes. The nickel/carbon composite nanofibers, used as a support for the growth of CNT, were deposited on nanopatterned silicon substrate by a hybrid plasma process, combining magnetron sputtering and plasma-enhanced chemical vapor deposition (PECVD). Transmission electron microscopy revealed the presence of spherical nanoparticles randomly dispersed within the carbon nanofibers. The nickel nanoparticles have been used as a catalyst to initiate the growth of CNT by PECVD at 600°C. After the growth of CNT onto the ultra-long CNF, SEM imaging revealed the formation of hierarchical carbon nanostructures which consist of CNF sheathed with CNTs. Furthermore, we demonstrate that reducing the growth temperature of CNT to less than 500°C leads to the formation of carbon nanowalls on the CNF instead of CNT. This simple fabrication method allows an easy preparation of hierarchical carbon nanostructures over a large surface area, as well as a simple manipulation of such material in order to integrate it into nanodevices.
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Affiliation(s)
- A A El Mel
- Université de Nantes, CNRS, Institut des Matériaux Jean Rouxel, UMR 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France
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