1
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Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays. SENSORS 2022; 22:s22072454. [PMID: 35408069 PMCID: PMC9002728 DOI: 10.3390/s22072454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Revised: 03/15/2022] [Accepted: 03/19/2022] [Indexed: 02/05/2023]
Abstract
The optical properties of silicon nanowire arrays (SiNWs) are closely related to surface morphology due to quantum effects and quantum confinement effects of the existing semiconductor nanocrystal. In order to explore the influence of the diameters and distribution density of nanowires on the light absorption in the visible to near infrared band, we report the highly efficient method of multiple replication of versatile homogeneous Au films from porous anodic aluminum oxide (AAO) membranes by ion sputtering as etching catalysts; the monocrystalline silicon is etched along the growth templates in a fixed proportion chemical solution to form homogeneous ordered arrays of different morphology and distributions on the surface. In this system, we demonstrate that the synthesized nanostructure arrays can be tuned to exhibit different optical characteristics in the test wavelength range by adjusting the structural parameters of AAO membranes.
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2
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Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review. SUSTAINABILITY 2021. [DOI: 10.3390/su131910766] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and is considered to be a potential technique to improve the efficiency of traditional Si-based solar cells. This article aims to review the MACE technique along with its mechanism for Ag-, Cu- and Ni-assisted etching. Primarily, several essential aspects of the fabrication of BSi are discussed, including chemical reaction, etching direction, mass transfer, and the overall etching process of the MACE method. Thereafter, three metal catalysts (Ag, Cu, and Ni) are critically analyzed to identify their roles in producing cost-effective and sustainable BSi solar cells with higher quality and efficiency. The conducted study revealed that Ag-etched BSi wafers are more suitable for the growth of higher quality and efficiency Si solar cells compared to Cu- and Ni-etched BSi wafers. However, both Cu and Ni seem to be more cost-effective and more appropriate for the mass production of BSi solar cells than Ag-etched wafers. Meanwhile, the Ni-assisted chemical etching process takes a longer time than Cu but the Ni-etched BSi solar cells possess enhanced light absorption capacity and lower activity in terms of the dissolution and oxidation process than Cu-etched BSi solar cells.
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3
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MATSUMOTO A, IWAMOTO K, SHIMADA Y, FURUKAWA K, MAJIMA S, YAE S. Formation and Dissolution of Mesoporous Layer during Metal-Particle-Assisted Etching of n-Type Silicon. ELECTROCHEMISTRY 2021. [DOI: 10.5796/electrochemistry.20-65159] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022] Open
Affiliation(s)
- Ayumu MATSUMOTO
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
| | - Keishi IWAMOTO
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
| | - Yuki SHIMADA
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
| | - Kyohei FURUKAWA
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
| | - Shun MAJIMA
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
| | - Shinji YAE
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo
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4
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Leonardi AA, Faro MJL, Irrera A. Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:383. [PMID: 33546133 PMCID: PMC7913243 DOI: 10.3390/nano11020383] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/16/2020] [Revised: 01/28/2021] [Accepted: 02/01/2021] [Indexed: 02/07/2023]
Abstract
Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.
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Affiliation(s)
- Antonio Alessio Leonardi
- Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy; (A.A.L.); (M.J.L.F.)
- Consiglio Nazionale delle Ricerche—Instituto Processi Chimico-Fisici (CNR-IPCF), Viale F. Stagno D’Alcontres 37, 98158 Messina, Italy
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM) UoS Catania, Via Santa Sofia 64, 95123 Catania, Italy
| | - Maria José Lo Faro
- Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy; (A.A.L.); (M.J.L.F.)
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM) UoS Catania, Via Santa Sofia 64, 95123 Catania, Italy
| | - Alessia Irrera
- Consiglio Nazionale delle Ricerche—Instituto Processi Chimico-Fisici (CNR-IPCF), Viale F. Stagno D’Alcontres 37, 98158 Messina, Italy
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5
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Soopy AKK, Li Z, Tang T, Sun J, Xu B, Zhao C, Najar A. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E126. [PMID: 33430484 PMCID: PMC7827665 DOI: 10.3390/nano11010126] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Revised: 12/28/2020] [Accepted: 12/31/2020] [Indexed: 02/01/2023]
Abstract
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
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Affiliation(s)
- Abdul Kareem K. Soopy
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
| | - Zhaonan Li
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Tianyi Tang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Jiaqian Sun
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Bo Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Chao Zhao
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Adel Najar
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
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6
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Shin JH, Rhu H, Ji YB, Oh SJ, Lee W. Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter. ACS APPLIED MATERIALS & INTERFACES 2020; 12:50703-50712. [PMID: 33125230 DOI: 10.1021/acsami.0c13574] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A generic top-down approach for the preparation of extended arrays of high-aspect ratio GaAs nanowires (NWs) with different crystallographic orientations (i.e., [100] or [111]) and morphologies (i.e., porous, nonporous, tapered, or awl-like NWs) is reported. The method is based on the anodically induced chemical etching (AICE) of GaAs wafers in an oxidant-free aqueous HF solution at room temperature by using a patterned metal mesh and allows us to overcome the drawbacks of conventional metal-assisted chemical etching (MACE) processes. Local oxidative dissolution of GaAs in contact with a metal is achieved by externally injecting holes (h+) into the valence band (VB) of GaAs through the metal mesh. It is found that injection of holes (h+) through direct GaAs contact, rather than the metal mesh, does not yield uniform nanowires but porosify GaAs wafers due to the high cell potential. On the basis of experiments and numerical simulation for the spatial distribution of an electric field, a phenomenological model that explains the formation of GaAs NWs and their porosification behaviors is proposed. GaAs NWs exhibit excellent terahertz (THz) wave emission properties, which vary with either the length or the shape of the nanowires. By taking advantage of controlled porosification and easy transfer of GaAs NWs to foreign substrates, a flexible THz wave emitter is realized.
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Affiliation(s)
- Jeong Ho Shin
- Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea
| | - Hyun Rhu
- Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea
| | - Young Bin Ji
- Gimhae Industry promotion & Bio-medical Foundation (GIBF), Gimhae, 50969 Gyeongnam, Republic of Korea
| | - Seung Jae Oh
- YUHS-KRIBB Medical Convergence Research Institute, College of Medicine, Yonsei University, 03722 Seoul, Republic of Korea
| | - Woo Lee
- Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology (UST), Yuseong, Daejeon 34113, Republic of Korea
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7
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Tamarov K, Kiviluoto R, Swanson JD, Unger BA, Ernst AT, Aindow M, Riikonen J, Lehto VP, Kolasinski KW. Low-Load Metal-Assisted Catalytic Etching Produces Scalable Porosity in Si Powders. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48969-48981. [PMID: 33052667 DOI: 10.1021/acsami.0c13980] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The recently discovered low-load metal-assisted catalytic etching (LL-MACE) creates nanostructured Si with controllable and variable characteristics that distinguish this technique from the conventional high-load variant. LL-MACE employs 150 times less metal catalyst and produces porous Si instead of Si nanowires. In this work, we demonstrate that some of the features of LL-MACE cannot be explained by the present understanding of MACE. With mechanistic insight derived from extensive experimentation, it is demonstrated that (1) the method allows the use of not only Ag, Pd, Pt, and Au as metal catalysts but also Cu and (2) judicious combinations of process parameters such as the type of metal, Si doping levels, and etching temperatures facilitate control over yield (0.065-88%), pore size (3-100 nm), specific surface area (20-310 m2·g-1), and specific pore volume (0.05-1.05 cm3·g-1). The porous structure of the product depends on the space-charge layer, which is controlled by the Si doping and the chemical identity of the deposited metal. The porous structure was also dependent on the dynamic structure of the deposited metal. A distinctive comet-like structure of metal nanoparticles was observed after etching with Cu, Ag, Pd, and, in some cases, Pt; this structure consisted of 10-50 nm main particles surrounded by smaller (<5 nm) nanoparticles. With good scalability and precise control of structural properties, LL-MACE facilitates Si applications in photovoltaics, energy storage, biomedicine, and water purification.
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Affiliation(s)
- Konstantin Tamarov
- Department of Applied Physics, University of Eastern Finland, 70210 Kuopio, Finland
| | - Riku Kiviluoto
- Department of Applied Physics, University of Eastern Finland, 70210 Kuopio, Finland
| | - Joseph D Swanson
- Department of Chemistry, West Chester University, West Chester, Pennsylvania 19383-2115, United States
| | - Bret A Unger
- Department of Chemistry, West Chester University, West Chester, Pennsylvania 19383-2115, United States
| | - Alexis T Ernst
- Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3136, United States
| | - Mark Aindow
- Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3136, United States
| | - Joakim Riikonen
- Department of Applied Physics, University of Eastern Finland, 70210 Kuopio, Finland
| | - Vesa-Pekka Lehto
- Department of Applied Physics, University of Eastern Finland, 70210 Kuopio, Finland
| | - Kurt W Kolasinski
- Department of Chemistry, West Chester University, West Chester, Pennsylvania 19383-2115, United States
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8
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Pinna E, Le Gall S, Torralba E, Mula G, Cachet-Vivier C, Bastide S. Mesopore Formation and Silicon Surface Nanostructuration by Metal-Assisted Chemical Etching With Silver Nanoparticles. Front Chem 2020; 8:658. [PMID: 32850670 PMCID: PMC7416550 DOI: 10.3389/fchem.2020.00658] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Accepted: 06/23/2020] [Indexed: 11/13/2022] Open
Abstract
This article presents a study on Metal-Assisted Chemical Etching (MACE) of silicon in HF-H2O2 using silver nanoparticles as catalysts. Our aim is a better understanding of the process to elaborate new 3D submicrometric surface structures useful for light management. We investigated MACE over the whole range of silicon doping, i.e., p++, p+, p, p-, n, n+, and n++. We discovered that, instead of the well-defined and straight mesopores obtained in p and n-type silicon, in p++ and n++ silicon MACE leads to the formation of cone-shaped macropores filled with porous silicon. We account for the transition between these two pore-formation regimes (straight and cone-shaped pores) by modeling (at equilibrium and under polarization) the Ag/Si/electrolyte (HF) system. The model simulates the system as two nanodiodes in series. We show that delocalized MACE is explained by a large tunnel current contribution for the p-Si/Ag and n-Si/HF diodes under reverse polarization, which increases with the doping level and when the size of the nanocontacts (Ag, HF) decreases. By analogy with the results obtained on heavily doped silicon, we finally present a method to form size-controlled cone-shaped macropores in p silicon with silver nanoparticles. This shape, instead of the usual straight mesopores, is obtained by applying an external anodic polarization during MACE. Two methods are shown to be effective for the control of the macropore cone angle: one by adjusting the potential applied during MACE, the other by changing the H2O2 concentration. Under appropriate etching conditions, the obtained macropores exhibit optical properties (reflectivity ~3 %) similar to that of black silicon.
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Affiliation(s)
- Elisa Pinna
- PoroSiLab, Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, Italy
| | - Sylvain Le Gall
- Group of Electrical Engineering of Paris (GeePs), CNRS, Univ. Paris-Saclay, CentraleSupélec, Sorbonne Univ., Gif-sur-Yvette, France
| | | | - Guido Mula
- PoroSiLab, Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, Italy
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9
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Matsumoto A, Son H, Eguchi M, Iwamoto K, Shimada Y, Furukawa K, Yae S. General corrosion during metal-assisted etching of n-type silicon using different metal catalysts of silver, gold, and platinum. RSC Adv 2019; 10:253-259. [PMID: 35492542 PMCID: PMC9048163 DOI: 10.1039/c9ra08728a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Accepted: 11/29/2019] [Indexed: 12/04/2022] Open
Abstract
Metal-assisted etching is a promising technique for microfabrication of semiconductors. In this method, porous silicon (Si) can be produced with a very simple procedure, and various nanostructures can be designed by changing the catalyst patterns. The kind of metal catalysts is one of the key factors to control the porous structure. In this work, we performed the etching of n-type Si (100) in a hydrofluoric acid solution containing hydrogen peroxide in the dark using silver, gold, and platinum particles electrolessly deposited at a constant coverage, and demonstrated the difference in the porous structures obtained for the different kind of metal catalysts. By comparing the mass loss of substrates with the depth of pores formed under the metal particles, we found that general corrosion occurred on the top-surface of the Si substrate around the metal particles even under the dark condition. The general corrosion depended on the metal species and it was explained by the formation and dissolution of a mesoporous layer. The kind of metal catalysts influences the dissolution of the Si surface not only under the metal catalysts but also between them. The first report on general corrosion during metal-assisted etching of silicon.![]()
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Affiliation(s)
- Ayumu Matsumoto
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
| | - Hikoyoshi Son
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
| | - Makiho Eguchi
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
| | - Keishi Iwamoto
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
| | - Yuki Shimada
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
| | - Kyohei Furukawa
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
| | - Shinji Yae
- Department of Chemical Engineering and Materials Science, Graduate School of Engineering, University of Hyogo 2167 Shosha Himeji Hyogo 671-2280 Japan
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10
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Bastide S, Torralba E, Halbwax M, Le Gall S, Mpogui E, Cachet-Vivier C, Magnin V, Harari J, Yarekha D, Vilcot JP. 3D Patterning of Si by Contact Etching With Nanoporous Metals. Front Chem 2019; 7:256. [PMID: 31106193 PMCID: PMC6494945 DOI: 10.3389/fchem.2019.00256] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2018] [Accepted: 04/01/2019] [Indexed: 11/23/2022] Open
Abstract
Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring electrolyte transport to and from the interface through the electrode. Nanoporous gold electrodes with two types of nanostructures, fine and coarse (average ligament widths of ~30 and 100 nm, respectively) have been elaborated and tested. Patterns consisting in networks of square-based pyramids (10 × 10 μm2 base × 7 μm height) and U-shaped lines (2, 5, and 10 μm width × 10 μm height × 4 μm interspacing) are imprinted by both electrochemical and chemical (HF-H2O2) contact etching. A complete pattern transfer of pyramids is achieved with coarse nanoporous gold in both contact etching modes, at a rate of ~0.35 μm min−1. Under the same etching conditions, U-shaped line were only partially imprinted. The surface state after imprinting presents various defects such as craters, pores or porous silicon. Small walls are sometimes obtained due to imprinting of the details of the coarse gold nanostructure. We establish that np-Au electrodes can be turned into “np-Pt” electrodes by simply sputtering a thin platinum layer (5 nm) on the etching (catalytic) side of the electrode. Imprinting with np Au/Pt slightly improves the pattern transfer resolution. 2D numerical simulations of the valence band modulation at the Au/Si/electrolyte interfaces are carried out to explain the localized aspect of contact etching of n-type silicon with gold and platinum and the different surface state obtained after patterning. They show that n-type silicon in contact with gold or platinum is in inversion regime, with holes under the metal (within 3 nm). Etching under moderate anodic polarization corresponds to a quasi 2D hole transfer over a few nanometers in the inversion layer between adjacent metal and electrolyte contacts and is therefore very localized around metal contacts.
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Affiliation(s)
- Stéphane Bastide
- Institut de Chimie et des Matériaux Paris-Est (UMR 7182), CNRS, UPEC, Université Paris Est, Thiais, France
| | - Encarnacion Torralba
- Institut de Chimie et des Matériaux Paris-Est (UMR 7182), CNRS, UPEC, Université Paris Est, Thiais, France
| | - Mathieu Halbwax
- Institut d'Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR 8520, Université de Lille, Villeneuve d'Ascq, France
| | - Sylvain Le Gall
- Group of Electrical Engineering of Paris (GeePs), CNRS, Centralesupelec, Univ. Paris-Sud, Sorbonne Université, Gif sur Yvette, France
| | - Elias Mpogui
- Institut de Chimie et des Matériaux Paris-Est (UMR 7182), CNRS, UPEC, Université Paris Est, Thiais, France
| | - Christine Cachet-Vivier
- Institut de Chimie et des Matériaux Paris-Est (UMR 7182), CNRS, UPEC, Université Paris Est, Thiais, France
| | - Vincent Magnin
- Institut d'Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR 8520, Université de Lille, Villeneuve d'Ascq, France
| | - Joseph Harari
- Institut d'Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR 8520, Université de Lille, Villeneuve d'Ascq, France
| | - Dmitri Yarekha
- Institut d'Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR 8520, Université de Lille, Villeneuve d'Ascq, France
| | - Jean-Pierre Vilcot
- Institut d'Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR 8520, Université de Lille, Villeneuve d'Ascq, France
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11
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Comprehensive Study of Au Nano-Mesh as a Catalyst in the Fabrication of Silicon Nanowires Arrays by Metal-Assisted Chemical Etching. COATINGS 2019. [DOI: 10.3390/coatings9020149] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precisely controlled. Ultra-thin anodic aluminum oxide (AAO) is one of the new-pattern nanostructure assembly systems for the synthesis of nanomaterials. The synthesized nanostructure arrays can be tuned to exhibit different optical and electrical properties in a certain wavelength range by adjusting the AAO membrane parameters. In this paper, we demonstrate an ultra-thin Au nano-meshes array from a single hexagonal AAO membrane as a replication master instead of conventional Ag particles as etching catalyst. The extended ordered silicon nanowires arrays are fabricated by the selective chemical dissolution of nanoscale noble metal meshes that exhibit excellent anti-reflection performance in broadband wavelengths and a wide incidence angle.
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12
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Wang Y, Liu Y, Yang L, Chen W, Du X, Kuznetsov A. Micro-structured inverted pyramid texturization of Si inspired by self-assembled Cu nanoparticles. NANOSCALE 2017; 9:907-914. [PMID: 28000825 DOI: 10.1039/c6nr08126f] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A superior micron-sized inverted pyramid structure has been successfully achieved by one-step copper nanoparticles assisted chemical etching in Si/Cu(NO3)2/HF/H2O2 solution for light trapping in silicon solar cells. The detailed mechanisms of such a novel method have been systematically demonstrated. The charge transfer during the reaction has been revealed by the simplified energy band diagram of the system as well. In order to form micro-structured inverted pyramids, the generation and dissolution of Cu nanoparticles should keep in balance during the reaction, which depends on the concentration of the etchant, the doping type and the doping level of the silicon substrate. With the investigation of the intrinsic properties of the silicon substrate, the etching rate is found out as a combined result of the electron concentration and the defect density of the substrate, as well as the potential barrier on the interface of Si/Cu nanoparticles. Furthermore, the anisotropic nature of Cu assisted chemical etching has also been investigated.
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Affiliation(s)
- Yan Wang
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. and Department of Physics, University of Oslo, Oslo, 0316, Norway.
| | - Yaoping Liu
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Lixia Yang
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Wei Chen
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Xiaolong Du
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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13
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Zhan D, Han L, Zhang J, He Q, Tian ZW, Tian ZQ. Electrochemical micro/nano-machining: principles and practices. Chem Soc Rev 2017; 46:1526-1544. [DOI: 10.1039/c6cs00735j] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
Micro/nano-machining (MNM) is becoming the cutting-edge of high-tech manufacturing because of the ever increasing industrial demands for super smooth surfaces and functional three-dimensional micro/nano-structures in miniaturized and integrate devices, and electrochemistry plays an irreplaceable role in MNM.
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Affiliation(s)
- Dongping Zhan
- State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)
- Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), and Department of Chemistry
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
| | - Lianhuan Han
- State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)
- Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), and Department of Chemistry
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
| | - Jie Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)
- Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), and Department of Chemistry
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
| | - Quanfeng He
- State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)
- Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), and Department of Chemistry
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
| | - Zhao-Wu Tian
- State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)
- Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), and Department of Chemistry
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
| | - Zhong-Qun Tian
- State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS)
- Collaborative Innovation Centre of Chemistry for Energy Materials (iChEM), and Department of Chemistry
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
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14
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Torralba E, Le Gall S, Lachaume R, Magnin V, Harari J, Halbwax M, Vilcot JP, Cachet-Vivier C, Bastide S. Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Bias. ACS APPLIED MATERIALS & INTERFACES 2016; 8:31375-31384. [PMID: 27781426 DOI: 10.1021/acsami.6b09036] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
An in-depth study of metal assisted chemical etching (MACE) of p-type c-Si in HF/H2O2 aqueous solutions using Pt nanoparticles as catalysts is presented. Combination of cyclic voltammetry, open circuit measurements, chronoamperometry, impedance spectroscopy, and 2D band bending modeling of the metal/semiconductor/electrolyte interfaces at the nanoscale and under different etching conditions allows gaining physical insights into this system. Additionally, in an attempt to mimic the etching conditions, the modeling has been performed with a positively biased nanoparticle buried in the Si substrate. Following these findings, the application of an external polarization during etching is introduced as a novel efficient approach for achieving straightforward control of the pore morphology by acting upon the band bending at the Si/electrolyte junction. In this way, nanostructures ranging from straight mesopores to cone-shaped macropores are obtained as the Si sample is biased from negative to positive potentials. Remarkably, macroscopic cone-shaped pores in the 1-5 μm size range with a high aspect ratio (L/W ∼ 1.6) are obtained by this method. This morphology leads to a reduction of the surface reflectance below 5% over the entire VIS-NIR domain, which outperforms macrostructures made by state of the art texturization techniques for Si solar cells.
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Affiliation(s)
- Encarnación Torralba
- Institut de Chimie et des Matériaux Paris-Est, CNRS, Université Paris-Est , 2-8 rue Henri Dunant, 94320 Thiais, France
| | - Sylvain Le Gall
- Group of electrical engineering - Paris, UMR CNRS 8507, Centrale Supélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Université Paris 06 , 3 & 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette CEDEX, France
| | - Raphaël Lachaume
- Group of electrical engineering - Paris, UMR CNRS 8507, Centrale Supélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Université Paris 06 , 3 & 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette CEDEX, France
| | - Vincent Magnin
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1 - Sciences et Technologies , Avenue Henri Poincaré, CS 60069, 59652 Villeneuve d'Ascq cedex, France
| | - Joseph Harari
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1 - Sciences et Technologies , Avenue Henri Poincaré, CS 60069, 59652 Villeneuve d'Ascq cedex, France
| | - Mathieu Halbwax
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1 - Sciences et Technologies , Avenue Henri Poincaré, CS 60069, 59652 Villeneuve d'Ascq cedex, France
| | - Jean-Pierre Vilcot
- Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille 1 - Sciences et Technologies , Avenue Henri Poincaré, CS 60069, 59652 Villeneuve d'Ascq cedex, France
| | - Christine Cachet-Vivier
- Institut de Chimie et des Matériaux Paris-Est, CNRS, Université Paris-Est , 2-8 rue Henri Dunant, 94320 Thiais, France
| | - Stéphane Bastide
- Institut de Chimie et des Matériaux Paris-Est, CNRS, Université Paris-Est , 2-8 rue Henri Dunant, 94320 Thiais, France
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15
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Kan M, Jia J, Zhao Y. High performance nanoporous silicon photoelectrodes co-catalyzed with an earth abundant [Mo3S13]2− nanocluster via drop coating. RSC Adv 2016. [DOI: 10.1039/c6ra01109h] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023] Open
Abstract
Earth abundant [Mo3S13]2− nanoclusters efficiently enhance a nanoporous silicon photoelectrode for hydrogen generation.
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Affiliation(s)
- Miao Kan
- School of Environmental Science and Engineering
- Shanghai Jiao Tong University
- Shanghai 200240
- China
| | - Jinping Jia
- School of Environmental Science and Engineering
- Shanghai Jiao Tong University
- Shanghai 200240
- China
| | - Yixin Zhao
- School of Environmental Science and Engineering
- Shanghai Jiao Tong University
- Shanghai 200240
- China
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16
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Lai CQ, Zheng W, Choi WK, Thompson CV. Metal assisted anodic etching of silicon. NANOSCALE 2015; 7:11123-11134. [PMID: 26059556 DOI: 10.1039/c5nr01916h] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.
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Affiliation(s)
- Chang Quan Lai
- Advanced Materials for Micro- and Nano-Systems Programme, Singapore-MIT Alliance, National University of Singapore, Singapore 117583, Singapore
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17
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Maskless inverted pyramid texturization of silicon. Sci Rep 2015; 5:10843. [PMID: 26035520 PMCID: PMC4451685 DOI: 10.1038/srep10843] [Citation(s) in RCA: 82] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2015] [Accepted: 05/01/2015] [Indexed: 11/18/2022] Open
Abstract
We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.
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18
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Zhu M, Eyraud M, Rouzo JL, Ait Ahmed N, Boulc’h F, Alfonso C, Knauth P, Flory F. Simple approach for the fabrication of PEDOT-coated Si nanowires. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2015; 6:640-50. [PMID: 25821704 PMCID: PMC4362025 DOI: 10.3762/bjnano.6.65] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2014] [Accepted: 02/06/2015] [Indexed: 05/09/2023]
Abstract
The synthesis of a conformal poly(3,4-ethylenedioxythiophene) (PEDOT) layer on Si nanowires was demonstrated using a pulsed electrodeposition technique. N-type Si nanowire (SiNWs) arrays were synthesized using an electroless metal-assisted chemical etching technique. The dependence of the SiNW reflection on the concentration of the AgNO3 solution was identified. A reflection of less than 2% over the entire visible spectral range was obtained for these structures, evidencing their excellent antireflective properties. The etched SiNWs nanostructures can be further modified by using a tapering technique, which further preserves the strong light trapping effect. P-type PEDOT was grown on these SiNWs using electrochemical methods. Since the polymerization reaction is a very fast process with regards to monomer diffusion along the SiNW, the conformal deposition by classical, fixed potential deposition was not favored. Instead, the core-shell heterojunction structure was finally achieved by a pulsed deposition method. An extremely large shunt resistance was exhibited and determined to be related to the diffusion conditions occurring during polymerization.
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Affiliation(s)
- Mingxuan Zhu
- Aix-Marseille University, Institut Matériaux Microélectronique Nanosciences de Provence-IM2NP, CNRS-UMR 7334, équipe OPTO-PV, Domaine Universitaire de Saint-Jérôme, Service 231, 13397 Marseille Cedex 20, France
- Ecole Centrale Marseille, 38 rue Joliot Curie, 13451 Marseille Cedex 20, France
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200240 Shanghai, China
| | - Marielle Eyraud
- Aix-Marseille University, CNRS, MADIREL UMR 7246, équipe Electrochimie des Matériaux, 13397 Marseille Cedex 20, France
| | - Judikael Le Rouzo
- Aix-Marseille University, Institut Matériaux Microélectronique Nanosciences de Provence-IM2NP, CNRS-UMR 7334, équipe OPTO-PV, Domaine Universitaire de Saint-Jérôme, Service 231, 13397 Marseille Cedex 20, France
| | - Nadia Ait Ahmed
- Université Abderrahmane Mira, Lab. d’Electrochimie, Corrosion et de Valorisation énergétique, 06000 Bejaia, Algeria
| | - Florence Boulc’h
- Aix-Marseille University, CNRS, MADIREL UMR 7246, équipe Electrochimie des Matériaux, 13397 Marseille Cedex 20, France
| | - Claude Alfonso
- Aix-Marseille University, Institut Matériaux Microélectronique Nanosciences de Provence-IM2NP, CNRS-UMR 7334, équipe OPTO-PV, Domaine Universitaire de Saint-Jérôme, Service 231, 13397 Marseille Cedex 20, France
| | - Philippe Knauth
- Aix-Marseille University, CNRS, MADIREL UMR 7246, équipe Electrochimie des Matériaux, 13397 Marseille Cedex 20, France
| | - François Flory
- Aix-Marseille University, Institut Matériaux Microélectronique Nanosciences de Provence-IM2NP, CNRS-UMR 7334, équipe OPTO-PV, Domaine Universitaire de Saint-Jérôme, Service 231, 13397 Marseille Cedex 20, France
- Ecole Centrale Marseille, 38 rue Joliot Curie, 13451 Marseille Cedex 20, France
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19
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Li L, Zhao X, Wong CP. Deep etching of single- and polycrystalline silicon with high speed, high aspect ratio, high uniformity, and 3D complexity by electric bias-attenuated metal-assisted chemical etching (EMaCE). ACS APPLIED MATERIALS & INTERFACES 2014; 6:16782-16791. [PMID: 25188875 DOI: 10.1021/am504046b] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In this work, a novel wet silicon (Si) etching method, electric bias-attenuated metal-assisted chemical etching (EMaCE), is demonstrated to be readily available for three-dimensional (3D) electronic integration, microelectromechinal systems, and a broad range of 3D electronic components with low cost. On the basis of the traditional metal-assisted chemical etching process, an electric bias was applied to the Si substrate in EMaCE. The 3D geometry of the etching profile was effectively controlled by the bias in a real-time manner. The reported method successfully fabricated an array of over 10 000 vertical holes with diameters of 28 μm on 1 cm(2) silicon chips at a rate of up to 11 μm/min. The sidewall roughness was kept below 50 nm, and a high aspect ratio of over 10:1 was achieved. The 3D geometry could be attenuated by the variable applied bias in real time. Vertical deep etching was realized on (100)-, (111)-Si, and polycrystalline Si substrates. Complex features with lateral dimensions of 0.8-500 μm were also fabricated with submicron accuracy.
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Affiliation(s)
- Liyi Li
- School of Materials Science and Engineering, Georgia Institute of Technology . 771 Ferst Drive, Atlanta, Georgia 30332, United States
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20
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Pennelli G. Review of nanostructured devices for thermoelectric applications. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2014; 5:1268-84. [PMID: 25247111 PMCID: PMC4168727 DOI: 10.3762/bjnano.5.141] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2014] [Accepted: 07/22/2014] [Indexed: 05/25/2023]
Abstract
A big research effort is currently dedicated to the development of thermoelectric devices capable of a direct thermal-to-electrical energy conversion, aiming at efficiencies as high as possible. These devices are very attractive for many applications in the fields of energy recovery and green energy harvesting. In this paper, after a quick summary of the fundamental principles of thermoelectricity, the main characteristics of materials needed for high efficiency thermoelectric conversion will be discussed, and a quick review of the most promising materials currently under development will be given. This review paper will put a particular emphasis on nanostructured silicon, which represents a valid compromise between good thermoelectric properties on one side and material availability, sustainability, technological feasibility on the other side. The most important bottom-up and top-down nanofabrication techniques for large area silicon nanowire arrays, to be used for high efficiency thermoelectric devices, will be presented and discussed.
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Affiliation(s)
- Giovanni Pennelli
- University of Pisa, Dipartimento di Ingegneria dell’Informazione, Via Caruso 16, I-56122 Pisa, Italy
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21
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Cheng J, Rathi SJ, Stradins P, Frey GL, Collins RT, Williams SKR. Free standing silica thin films with highly ordered perpendicular nanopores. RSC Adv 2014. [DOI: 10.1039/c3ra46666c] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Free standing silica thin films with perpendicular ordered nanopores were obtained by electro-assisted self-assembly and subsequent detachment from PEDOT:PSS coated indium tin oxide (ITO) substrates.
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Affiliation(s)
- Jifang Cheng
- Department of Chemistry and Geochemistry
- Colorado School of Mines
- Golden, USA
| | - Somilkumar J. Rathi
- The School for Engineering of Matter
- Transport and Energy
- Arizona State University
- Tempe, USA
| | | | - Gitti L. Frey
- Department of Materials Engineering
- Technion-Israel Institute of Technology
- Haifa 32000, Israel
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22
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Geyer N, Fuhrmann B, Leipner HS, Werner P. Ag-mediated charge transport during metal-assisted chemical etching of silicon nanowires. ACS APPLIED MATERIALS & INTERFACES 2013; 5:4302-4308. [PMID: 23635321 DOI: 10.1021/am400510f] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguous metal films has been investigated. The experiments give a better insight how the charges and reaction products can penetrate to the etching front. The formation of a layer of porous Si between the metal film and the bulk Si is a prerequisite for the etching process. The electronic holes (positive charges) necessary for the etching of porous Si are generated at the surface of the metal in contact with the oxidative agent. Because of the insulating character of the thin walls of the porous Si, the transport of the electronic holes through this layer is not possible. Instead, it is found that the transport of electronic holes proceeds primarily by means of the Ag/Ag(+) redox pair circulating in the electrolyte and diffusing through the etched pores in the Si. The charge transport occurs without the ionic contribution at the positions where the metal is in direct contact with the Si. Here, an electropolishing process takes place, leading to an extensive removal of the Si and sinking in of the film into the Si substrate.
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Affiliation(s)
- Nadine Geyer
- Max Planck Institute of Microstructure Physics, Halle, Germany.
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23
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Ahmad M, Grime GW. Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2013; 19:261-267. [PMID: 23388452 DOI: 10.1017/s1431927612014262] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS.
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Affiliation(s)
- Muthanna Ahmad
- IBA Laboratory, Chemistry Department, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus, Syria
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24
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Li X, Xiao Y, Yan C, Song JW, Talalaev V, Schweizer SL, Piekielska K, Sprafke A, Lee JH, Wehrspohn RB. Fast electroless fabrication of uniform mesoporous silicon layers. Electrochim Acta 2013. [DOI: 10.1016/j.electacta.2013.01.136] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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25
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Cao DT, Ngan LTQ, Anh CT. Enhancement and stabilization of the photoluminescence from porous silicon prepared by Ag-assisted electrochemical etching. SURF INTERFACE ANAL 2012. [DOI: 10.1002/sia.5158] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Dao Tran Cao
- Institute of Materials Science; 18 Hoang Quoc Viet Road Hanoi Vietnam
| | | | - Cao Tuan Anh
- Institute of Physics; 10 Dao Tan Str. Hanoi Vietnam
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26
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Li X. Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics. CURRENT OPINION IN SOLID STATE AND MATERIALS SCIENCE 2012; 16:71-81. [PMID: 0 DOI: 10.1016/j.cossms.2011.11.002] [Citation(s) in RCA: 73] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
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27
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Kim J, Rhu H, Lee W. A continuous process for Si nanowires with prescribed lengths. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm13831f] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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