Ding H, Pan N, Ma C, Wu Y, Li J, Cai H, Zhang K, Zhang G, Ren W, Li J, Luo Y, Wang X, Hou JG. Maximizing integrated optical and electrical properties of a single ZnO nanowire through native interfacial doping.
ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014;
26:3035-3041. [PMID:
24449108 DOI:
10.1002/adma.201305340]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2013] [Revised: 12/18/2013] [Indexed: 06/03/2023]
Abstract
A native interfacial doping layer introduced in core-shell type ZnO nano-wires by a simple vapor phase re-growth procedure endows the produced nano-wires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core-shell nanowires plays a crucial role in the outstanding performances.
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