Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection

High-performance pyramid-SiNWs biosensor for NH3gas detection

NH3is widely existed in the environment and is closely associated with various health issues. Additionally, detecting the small amounts of NH3exhaled by patients with liver and kidney diseases offers potential opportunities for painless early disease diagnosis. Therefore, there is an urgent need for a convenient, rapid, and highly sensitive real-time NH3monitoring method. This work presents a high-performance NH3sensor based on olfactory receptor-derived peptides (ORPs) on a pyramid silicon nanowires (SiNWs) structure substrate. First, we successfully fabricated the pyramid-SiNWs structure on a silicon substrate using a chemical etching method. Subsequently, by dehydrative condensation reaction between the amino groups on APTES and the carboxyl groups of ORPs, ORPs were successfully immobilized onto the pyramid-SiNWs structure. This methodology allows the ORPs sensor on the pyramid-SiNWs substrate to detect NH3as low as 1 ppb, which was the reported lowest limit of detection, with a higher response rate compared to ORPs sensors on flat SiNWs substrates. The sensors also exhibit good sensitivity and stability for NH3gas detection. The results show the feasibility and potential applications of ORPs-pyramid-SiNWs structure sensors, in the fields of food safety, disease monitoring, and environmental protection, etc.

Future Prospects of Luminescent Silicon Nanowires Biosensors

In this paper, we exploit the perspective of luminescent Si nanowires (NWs) in the growing field of commercial biosensing nanodevices for the selective recognition of proteins and pathogen genomes. We fabricated quantum confined fractal arrays of Si NWs with room temperature emission at 700 nm obtained by thin-film, metal-assisted, chemical etching with high production output at low cost. The fascinating optical features arising from multiple scattering and weak localization of light promote the use of Si NWs as optical biosensing platforms with high sensitivity and selectivity. In this work, label-free Si NW optical sensors are surface modified for the selective detection of C-reactive protein through antigen-gene interaction. In this case, we report the lowest limit of detection (LOD) of 1.6 fM, fostering the flexibility of different dynamic ranges for detection either in saliva or for serum analyses. By varying the NW surface functionalization with the specific antigen, the luminescence quenching of NW biosensors is used to measure the hepatitis B-virus pathogen genome without PCR-amplification, with an LOD of about 20 copies in real samples or blood matrix. The promising results show that NW optical biosensors can detect and isolate extracellular vesicles (EV) marked with CD81 protein with unprecedented sensitivity (LOD 2 × 10⁵ sEV/mL), thus enabling their measurement even in a small amount of blastocoel fluid.

Luminescent Silicon Nanowires as Novel Sensor for Environmental Air Quality Control

Air quality monitoring is an increasingly debated topic nowadays. The increasing spillage of waste products released into the environment has contributed to the increase in air pollution. Consequently, the production of increasingly performing devices in air monitoring is increasingly in demand. In this scenario, the attention dedicated to workplace safety monitoring has led to the developing and improving of new sensors. Despite technological advancements, sensors based on nanostructured materials are difficult to introduce into the manufacturing flow due to the high costs of the processes and the approaches that are incompatible with the microelectronics industry. The synthesis of a low-cost ultra-thin silicon nanowires (Si NWs)-based sensor is here reported, which allows us the detection of various dangerous gases such as acetone, ethanol, and the ammonia test as a proof of concept in a nitrogen-based mixture. A modified metal-assisted chemical etching (MACE) approach enables to obtain ultra-thin Si NWs by a cost-effective, rapid and industrially compatible process that exhibit an intense light emission at room temperature. All these gases are common substances that we find not only in research or industrial laboratories, but also in our daily life and can pose a serious danger to health, even at small concentrations of a few ppm. The exploitation of the Si NWs optical and electrical properties for the detection of low concentrations of these gases through their photoluminescence and resistance changes will be shown in a nitrogen-based gas mixture. These sensing platforms give fast and reversible responses with both optical and electrical transductions. These high performances and the scalable synthesis of Si NWs could pave the way for market-competitive sensors for ambient air quality monitoring.

SNROW-based highly sensitive label-free surface biosensor for hepatitis B detection

Despite the availability of effective hepatitis B vaccinations, the hepatitis B virus remains a serious global health concern. It is expected that early detection could aid in initiating therapy before the infection progresses to liver damage. A silicon nanowire rectangular optical waveguide has been demonstrated theoretically to detect the surface antigen of hepatitis B "HBsAg" based on label-free surface sensing using finite-element method-based COMSOL Multiphysics. Different procedural segments of the biomarker detection have been mimicked on the surface of a waveguide as adlayers to investigate the device theoretically. Initially, the parameters of the waveguide have been optimized to provide a large interaction of light and bio-analyte, i.e., to provide high sensitivity. The analyses are first performed at the waveguide level based on the light-analyte interaction. Furthermore, performances of the sensor have been obtained by incorporating this waveguide structure in the sensing arm of the Mach-Zehnder interferometer. The device structure shows ultra-high surface sensitivities such as phase surface sensitivity of 7.03×2πrad/nm and MZI surface sensitivity of 3421.89 µW/nm with an excellent detection limit of 2.92×10^-3pg/mm² for HBsAg detection. The proposed device can measure the HBsAg concentration as low as 0.00973 ng/mL, which is significantly low to detect the infection in an early stage.

Flexible silicon nanowires sensor for acetone detection on plastic substrates

Acetone commonly exists in daily life and is harmful to human health, therefore the convenient and sensitive monitoring of acetone is highly desired. In addition, flexible sensors have the advantages of light-weight, conformal attachable to irregular shapes, etc. In this study, we fabricated high performance flexible silicon nanowires (SiNWs) sensor for acetone detection by transferring the monocrystalline Si film and metal-assisted chemical etching method on polyethylene terephthalate (PET). The SiNWs sensor enabled detection of gaseous acetone with a concentration as low as 0.1 parts per million (ppm) at flat and bending states. The flexible SiNWs sensor was compatible with the CMOS process and exhibited good sensitivity, selectivity and repeatability for acetone detection at room temperature. The flexible sensor showed performance improvement under mechanical bending condition and the underlying mechanism was discussed. The results demonstrated the good potential of the flexible SiNWs sensor for the applications of wearable devices in environmental safety, food quality, and healthcare.

Ultrathin Silicon Nanowires for Optical and Electrical Nitrogen Dioxide Detection

The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the realization of a cost-effective sensor based on ultrathin silicon nanowires (Si NWs) for the detection of nitrogen dioxide (NO2) is reported. A modification of the metal-assisted chemical etching method allows light-emitting silicon nanowires to be obtained through a fast, low-cost, and industrially compatible approach. NO2 is a well-known dangerous gas that, even with a small concentration of 3 ppm, represents a serious hazard for human health. We exploit the particular optical and electrical properties of these Si NWs to reveal low NO2 concentrations through their photoluminescence (PL) and resistance variations reaching 2 ppm of NO2. Indeed, these Si NWs offer a fast response and reversibility with both electrical and optical transductions. Despite the macro contacts affecting the electrical transduction, the sensing performances are of high interest for further developments. These promising performances coupled with the scalable Si NW synthesis could unfold opportunities for smaller sized and better performing sensors reaching the market for environmental monitoring.

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Over the past few decades, nanowires have arisen as a centerpiece in various fields of application from electronics to photonics, and, recently, even in bio-devices. Vertically aligned nanowires are a particularly decent example of commercially manufacturable nanostructures with regard to its packing fraction and matured fabrication techniques, which is promising for mass-production and low fabrication cost. Here, we track recent advances in vertically aligned nanowires focused in the area of photonics applications. Begin with the core optical properties in nanowires, this review mainly highlights the photonics applications such as light-emitting diodes, lasers, spectral filters, structural coloration and artificial retina using vertically aligned nanowires with the essential fabrication methods based on top-down and bottom-up approaches. Finally, the remaining challenges will be briefly discussed to provide future directions.

Non-target analysis of vapor mixtures using silicon nanowire array sampling and thermal desorption

This work presents and evaluates an algorithmic approach to deconvolving the elution profiles of chemical components of vapor mixtures that have been sampled and desorbed from a novel preconcentrator based on highly ordered silicon nanowire arrays. The arrays provide a medium for both preconcentration and partial chromatographic resolution, which is then further leveraged with multichannel detection. Here, mixtures of nitro aromatic vapors are sampled and then thermally desorbed from the device, at which point they are detected by a conventional mass selective detector. The overlapping elution profiles observed from the array are sequentially extracted using a chemometric analysis approach based on evolving factor analysis and multivariate curve resolution by alternating least squares, enabling qualitative and quantitative analysis of individual components without target analyte libraries or complete chromatographic separation. This work examines the analytical capabilities conferred to multichannel detection by silicon nanowire array pre-concentration and partial separation and discusses the technique's limitations, illustrated by both experimental and simulated data.

A Silicon Nanowire Array Biosensor Fabricated by Complementary Metal Oxide Semiconductor Technique for Highly Sensitive and Selective Detection of Serum Carcinoembryonic Antigen

In this paper, we present a highly sensitive and selective detection of serum carcinoembryonic antigen (CEA) based on silicon nanowire (SiNW) array device. With the help of traditional microfabrication technology, low-cost and highly controllable SiNW array devices were fabricated. After a series of surface modification processes, SiNW array biosensors show rapid and reliable response to CEA; the detection limit of serum CEA was 10 fg/mL, the current signal is linear with the logarithm of serum CEA concentration in the range of 10 fg/mL to 100 pg/mL. In this work, SiNW array biosensors can obtain strong signal and high signal-to-noise ratio; these advantages can reduce the production cost of the SiNW-based system and promote the application of SiNWs in the field of tumor marker detection.

Synergy between nanomaterials and volatile organic compounds for non-invasive medical evaluation

This article is an overview of the present and ongoing developments in the field of nanomaterial-based sensors for enabling fast, relatively inexpensive and minimally (or non-) invasive diagnostics of health conditions with follow-up by detecting volatile organic compounds (VOCs) excreted from one or combination of human body fluids and tissues (e.g., blood, urine, breath, skin). Part of the review provides a didactic examination of the concepts and approaches related to emerging sensing materials and transduction techniques linked with the VOC-based non-invasive medical evaluations. We also present and discuss diverse characteristics of these innovative sensors, such as their mode of operation, sensitivity, selectivity and response time, as well as the major approaches proposed for enhancing their ability as hybrid sensors to afford multidimensional sensing and information-based sensing. The other parts of the review give an updated compilation of the past and currently available VOC-based sensors for disease diagnostics. This compilation summarizes all VOCs identified in relation to sickness and sampling origin that links these data with advanced nanomaterial-based sensing technologies. Both strength and pitfalls are discussed and criticized, particularly from the perspective of the information and communication era. Further ideas regarding improvement of sensors, sensor arrays, sensing devices and the proposed workflow are also included.

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs' promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology.

Palladium-Decorated Silicon Nanomesh Fabricated by Nanosphere Lithography for High Performance, Room Temperature Hydrogen Sensing

A hydrogen (H₂ ) gas sensor based on a silicon (Si) nanomesh structure decorated with palladium (Pd) nanoparticles is fabricated via polystyrene nanosphere lithography and top-down fabrication processes. The gas sensor shows dramatically improved H₂ gas sensitivity compared with an Si thin film sensor without nanopatterns. Furthermore, a buffered oxide etchant treatment of the Si nanomesh structure results in an additional performance improvement. The final sensor device shows fast H₂ response and high selectivity to H₂ gas among other gases. The sensing performance is stable and shows repeatable responses in both dry and high humidity ambient environments. The sensor also shows high stability without noticeable performance degradation after one month. This approach allows the facile fabrication of high performance H₂ sensors via a cost-effective, complementary metal-oxide-semiconductor (CMOS) compatible, and scalable nanopatterning method.

Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism

We demonstrate controlled fabrication of porous Si (PS) and vertically aligned silicon nanowires array starting from bulk silicon wafer by simple chemical etching method, and the underlying mechanism of nanostructure formation is presented. Silicon-oxidation rate and the electron-scavenging rate from metal catalysis play a vital role in determining the morphology of Si nanostructures. The size of Ag catalyst is found to influence the Si oxidation rate. Tunable morphologies from irregular porous to regular nanowire structure could be tailored by controlling the size of Ag nanoparticles and H₂O₂ concentration. Ag nanoparticles of size around 30 nm resulted in irregular porous structures, whereas discontinuous Ag film yielded nanowire structures. The depth of the porous Si structures and the aspect ratio of Si nanowires depend on H₂O₂ concentration. For a fixed etching time, the depth of the porous structures increases on increasing the H₂O₂ concentration. By varying the H₂O₂ concentration, the surface porosity and aspect ratio of the nanowires were controlled. Controlling the Ag catalyst size critically affects the morphology of the etched Si nanostructures. H₂O₂ concentration decides the degree of porosity of porous silicon, dimensions and surface porosity of silicon nanowires, and etch depth. The mechanisms of the size- and H₂O₂-concentration-dependent dissociation of Ag and the formation of porous silicon and silicon nanowire are described in detail.

Ultrasensitive Silicon Nanowire Sensor Developed by a Special Ag Modification Process for Rapid NH3 Detection

Surface functionalization is very effective in enhancing sensing properties of a chemiresistive gas sensor. In this work, we develop a novel and cost-effective process to prepare Ag-modified silicon nanowire (SiNW) sensors and further suggest a resistance effect model to clarify the enhanced sensing mechanism of Ag-modified SiNWs. The SiNWs were formed via metal-assisted chemical etching (MACE), and the Ag nanoparticle (NP) modification was achieved in situ based on the MACE-produced Ag dendrites by involving a crucial anisotropic postetching of TMAH. The TMAH etching induces a loose array of needle-like, rough SiNWs (RNWs) with firm attachment of tiny Ag NPs. Comparative investigations for NH₃-sensing properties indicate that the RNWs modified by discrete Ag NPs (Ag@RNWs) display an ∼3-fold enhancement in gas response at room temperature compared with pristine SiNWs. Meanwhile, transient response and ultrafast recovery are observed for the Ag@RNW sensor (t_res ≤ 2 s and t_rec ≤ 9 s to 0.33-10 ppm of NH₃). The study demonstrates the considerable effect and potential of the Ag modification process developed in this work. A resistance effect model was further suggested to clarify the underlying mechanism of the enhanced response and the response saturation characteristic of the Ag@RNWs. The promotion of TMAH etching-induced microstructure modulation to sensing properties was also demonstrated.

Rapid Low-Temperature 3D Integration of Silicon Nanowires on Flexible Substrates

The vertical integration of 1D nanostructures onto the 2D substrates has the potential to offer significant performance gains to flexible electronic devices due to high integration density, large surface area, and improved light absorption and trapping. A simple, rapid, and low temperature transfer bonding method has been developed for this purpose. Ultrasonic vibration is used to achieve a low temperature bonding within a few seconds, resulting in a polymer-matrix-free, electrically conducting vertical assembly of silicon nanowires (SiNWs) with a graphene/PET substrate. The microscopic structure, and mechanical and electrical characteristics of the interface between the transferred SiNW array and graphene layer are subsequently investigated, revealing that this creates a mechanically robust and electrically Ohmic contact. This newly developed ultrasonic transfer bonding technique is also found to be readily adaptable for diverse substrates of both metal and polymer. It is therefore considered as a valuable technique for integrating 1D vertical nanostructures onto the 2D flexible substrates for flexible photovoltaics, energy storage, and water splitting systems.

Influence of inhomogeneous porosity on silicon nanowire Raman enhancement and leaky mode modulated photoluminescence

Metal-assisted chemical etching (MACE) offers an inexpensive, massively parallel fabrication process for producing silicon nanowires (SiNWs). These nanowires can possess a degree of porosity depending on etch conditions. Because the porosity is often spatially inhomogeneous, there is a need to better understand its nature if applications exploiting the porosity are to be pursued. Here, the resolution afforded by micro-Raman and micro-photoluminescence (PL) is used to elucidate the effects of porosity heterogeneity on the optical properties of individual SiNWs produced in large arrays with MACE, while also determining the spatial character of the heterogeneity. For highly porous SiNWs, there is a dramatic reduction in Raman signal and an increase in PL near the SiNW tips. PL spectra collected along the SiNW length exhibit peaks due to leaky mode resonances. Analysis of the PL resonance peaks, Raman spectrum line shape, SEM images, and EDS spectra indicate that the SiNWs possess both radial and axial heterogeneity wherein, from base to SiNW tip, the SiNWs comprise a shell of increasingly thick porous Si surrounding a tapering core of bulk Si. This work describes how structural porosity variation shapes SiNW optical properties, which will influence the design of new SiNW-based photonic devices and chemical/biological sensors.

Graphene/Si-nanowire heterostructure molecular sensors

Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

Silicon nanowire-based devices for gas-phase sensing

Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed.

Electroassisted transfer of vertical silicon wire arrays using a sacrificial porous silicon layer

An electroassisted method is developed to transfer silicon (Si) wire arrays from the Si wafers on which they are grown to other substrates while maintaining their original properties and vertical alignment. First, electroassisted etching is used to form a sacrificial porous Si layer underneath the Si wires. Second, the porous Si layer is separated from the Si wafer by electropolishing, enabling the separation and transfer of the Si wires. The method is further expanded to develop a current-induced metal-assisted chemical etching technique for the facile and rapid synthesis of Si nanowires with axially modulated porosity.

Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up technique

The production and characterization of ultradense, planarized, and organized silicon nanowire arrays with good crystalline and optical properties are reported. First, alumina templates are used to grow silicon nanowires whose height, diameter, and density are easily controlled by adjusting the structural parameters of the template. Then, post-processing using standard microelectronic techniques enables the production of high-density silicon nanowire matrices featuring a remarkably flat overall surface. Different geometries are then possible for various applications. Structural analysis using synchrotron X-ray diffraction reveals the good crystallinity of the nanowires and their long-range periodicity resulting from their high-density organization. Transmission electron microscopy also shows that the nanowires can grow on nonpreferential substrate, enabling the use of this technique with universal substrates. The good geometry control of the array also results in a strong optical absorption which is interesting for their use in nanowire-based optical sensors or similar devices.

Air-bridged Ohmic contact on vertically aligned si nanowire arrays: application to molecule sensors

A simple, cost-effective, and highly reliable method for constructing an air-bridged electrical contact on large arrays of vertically aligned nanowires was developed. The present method may open up new opportunities for developing advanced nanowire-based devices for energy harvest and storage, power generation, and sensing applications.