Graphene as an anti-permeation and protective layer for indium-free transparent electrodes

Nanopatterned graphene on a polymer substrate by a direct peel-off technique

A graphene (Gr) on a polyimide (PI) polymer film (Gr-PI film), obtained by a direct peel-off technique, is proposed and investigated. Thanks to its high transparency, electrical conductivity, mechanical strength, and chemical durability, the Gr-PI film is an ideal substrate for flexible electronic and optoelectronic devices, including transistors, light-emitting diodes, and plasmonic antennas. It is obtained using a straightforward method. After spin coating and curing a PI film on Gr previously grown on Cu, one can separate the Gr-PI film from the Cu foil thanks to the difference in the adhesive energy between the Gr-Cu and Gr-PI interfaces. The resulting Gr-PI film shows an average electrical sheet resistance ranging from 520 to 860 Ω/sq and a very high optical transmission (>90%), which have allowed the demonstration of a transparent heater. The surface morphology of the Gr-PI film follows that of the Cu foil, with the latter maintaining its surface properties and allowing in this way its reuse in subsequent chemical vapor deposition growth. The method can also be applied to patterned Gr, as is demonstrated for nanosize ribbons with a width of a few tens of nanometers.

Large-area, conductive and flexible reduced graphene oxide (RGO) membrane fabricated by electrophoretic deposition (EPD)

A large-area, conductive, and flexible membrane made from the stabilized aqueous solution of reduced graphene oxide (RGO) is successfully fabricated using an electrophoretic deposition (EPD) method. A low-voltage operation of EPD (∼3 volts) allows a robust consolidation of RGO layers desirably aligned in the in-plane direction through the cohesive electrophoretic squeezing force near the current collector. Transferring the deposited RGO layers to arbitrary substrates or achieving as a free-standing form, two methods of "chemical etching" and "electrochemical etching" are developed to detach the RGO layers from the EPD current collector without damaging the deposited RGO. Further reducing the free-standing RGO membrane by thermal annealing up to 1000 °C, a graphite-like architecture is restored (d-spacing at 3.42 Å with C/O ratio at 16.66) and the electrical conductivity increases as high as 5.51 × 10(5) S/m. The tightly-consolidated and securely-detached RGO membrane allows the free-standing and flexible features and highly conductive characteristics, which are further developed during thermal treatment. Because of the facile scale-up nature of the EPD process and RGO solution, the developed methodology has a considerable potential to be applied to various energy storage devices, flexible conductive coatings, and other electrochemical systems.

Hybrid transparent conductive film on flexible glass formed by hot-pressing graphene on a silver nanowire mesh

Polycrystalline graphene and metallic nanowires (NWs) have been proposed to replace indium tin oxide (ITO), the most widely used transparent electrode (TE) film on the market. However, the trade-off between optical transparency (Topt) and electrical sheet resistance (Rs) of these materials taken alone makes them difficult to compete with ITO. In this paper, we show that, by hot-press transfer of graphene monolayer on Ag NWs, the resulting combined structure benefits from the synergy of the two materials, giving a Topt-Rs trade-off better than that expected by simply adding the single material contributions Ag NWs bridge any interruption in transferred graphene, while graphene lowers the contact resistance among neighboring NWs and provides local conductivity in the uncovered regions in-between NWs. The hot-pressing not only allows graphene transfer but also compacts the NWs joints, thus reducing contact resistance. The dependence on the initial NW concentration of the effects produced by the hot press process on its own and the graphene transfer using hot press was investigated and indicates that a low concentration is more suitable for the proposed geometry. A TE film with Topt of 90% and Rs of 14 Ω/sq is demonstrated, also on a flexible glass substrate about 140 μm thick, a very attractive platform for efficient flexible electronic and photonic devices.