1
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Patera M, Zieliński M. Crystal field splitting and spontaneous polarization in InP crystal phase quantum dots. Sci Rep 2022; 12:15561. [PMID: 36114259 PMCID: PMC9481640 DOI: 10.1038/s41598-022-19076-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 08/24/2022] [Indexed: 11/11/2022] Open
Abstract
Crystal phase quantum dots are formed by vertically stacking zinc-blende and wurtzite phases during nanowire growth. In this work, we show, using an atomistic many-body approach, that crystal field splitting in the wurtzite phase, as well as spontaneous polarization originating from the phase interfaces, will strongly affect the properties of lowest hole states in InP crystal phase quantum dots, and in turn the excitonic optical spectra. We also show that the artifact-free modeling of crystal phase quantum dots should incorporate any additional potentials on equal footing with the electron-hole interaction. In this paper, we discuss a reliable theoretical framework that can be applied to investigate the electronic and optical properties of InP-based crystal phase quantum dots. The importance of accurate excitonic calculations for such systems is highlighted in view of their potential applications in nanowire photonics, yet further research is necessary for bringing theory and experiment in agreement.
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Affiliation(s)
- Martyna Patera
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Toruń, Poland
| | - Michał Zieliński
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Toruń, Poland.
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2
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Stone D, Koley S, Remennik S, Asor L, Panfil YE, Naor T, Banin U. Luminescent Anisotropic Wurtzite InP Nanocrystals. NANO LETTERS 2021; 21:10032-10039. [PMID: 34807613 DOI: 10.1021/acs.nanolett.1c03719] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal Cu3P nanocrystals. A comprehensive surface treatment with NOBF4 was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation. The attained InP nanocrystals manifest a highly resolved absorption spectrum with a narrow emission line of 80 meV, and photoluminescence quantum yield of up to 40%. Optical anisotropy measurements on ensemble and single particle bases show the occurrence of polarized transitions directly mirroring the anisotropic wurtzite lattice, as also manifested from modeling of the quantum confined electronic levels. This shows a green synthesis path for achieving wurtzite InP nanocrystals with desired optoelectronic properties including color purity and light polarization with potential for diverse optoelectronic applications.
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Affiliation(s)
- David Stone
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Somnath Koley
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Sergei Remennik
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Lior Asor
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Yossef E Panfil
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Tom Naor
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Uri Banin
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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3
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Viazmitinov DV, Berdnikov Y, Kadkhodazadeh S, Dragunova A, Sibirev N, Kryzhanovskaya N, Radko I, Huck A, Yvind K, Semenova E. Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth. NANOSCALE 2020; 12:23780-23788. [PMID: 33232429 DOI: 10.1039/d0nr05779g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V materials into Si platforms and opens up new opportunities in active Si photonics.
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4
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Jaffal A, Regreny P, Patriarche G, Chauvin N, Gendry M. Density-controlled growth of vertical InP nanowires on Si(111) substrates. NANOTECHNOLOGY 2020; 31:354003. [PMID: 32428880 DOI: 10.1088/1361-6528/ab9475] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on controlling the number and the size of the Au-In catalyst droplets in addition to the conditions for the NW nucleation. We show that the NW density can be tuned with values in the range of 18 µm-2 to <0.1 µm-2 by the suitable choice of the In/Au catalyst beam equivalent pressure (BEP) ratio, by the phosphorous BEP and the growth temperature. The same degree of control is transferred to InAs/InP quantum dot-nanowires, taking advantage of the ultra-low density to study by micro-photoluminescence the optical properties of a single quantum dot-nanowires emitting in the telecom band monolithically grown on silicon. Optical spectroscopy at cryogenic temperature successfully confirmed the relevance of our method to excite single InAs quantum dots on the as-grown sample, which opens the path for large-scale applications based on single quantum dot-nanowire devices integrated on silicon. .
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Affiliation(s)
- A Jaffal
- Institut des Nanotechnologies des Lyon-INL, UMR 5270 CNRS, INSA de Lyon, Université de Lyon, 7 avenue Jean Capelle, 69621, Villeurbanne cedex, France. Institut des Nanotechnologies des Lyon-INL, UMR 5270 CNRS, Ecole Centrale de Lyon, Université de Lyon, 36 avenue Guy de Collongue, 69134, Ecully cedex, France
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5
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Jaffal A, Redjem W, Regreny P, Nguyen HS, Cueff S, Letartre X, Patriarche G, Rousseau E, Cassabois G, Gendry M, Chauvin N. InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon. NANOSCALE 2019; 11:21847-21855. [PMID: 31696191 DOI: 10.1039/c9nr06114b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a beam divergence angle θ = 30° is demonstrated using a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, g2(0) = 0.05, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs.
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Affiliation(s)
- Ali Jaffal
- Université de Lyon, Institut des Nanotechnologies de Lyon, UMR 5270 CNRS, INSA de Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne cedex, France.
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6
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Kornienko N, Gibson NA, Zhang H, Eaton SW, Yu Y, Aloni S, Leone SR, Yang P. Growth and Photoelectrochemical Energy Conversion of Wurtzite Indium Phosphide Nanowire Arrays. ACS NANO 2016; 10:5525-5535. [PMID: 27124203 DOI: 10.1021/acsnano.6b02083] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising strategy to absorb solar energy and directly convert it into a dense storage medium in the form of chemical bonds. The continual development and improvement of individual components of PEC systems is critical toward increasing the solar to fuel efficiency of prototype devices. Within this context, we describe a study on the growth of wurtzite indium phosphide (InP) nanowire (NW) arrays on silicon substrates and their subsequent implementation as light-absorbing photocathodes in PEC cells. The high onset potential (0.6 V vs the reversible hydrogen electrode) and photocurrent (18 mA/cm(2)) of the InP photocathodes render them as promising building blocks for high performance PEC cells. As a proof of concept for overall system integration, InP photocathodes were combined with a nanoporous bismuth vanadate (BiVO4) photoanode to generate an unassisted solar water splitting efficiency of 0.5%.
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Affiliation(s)
- Nikolay Kornienko
- Department of Chemistry, University of California , Berkeley, California 94720, United States
| | - Natalie A Gibson
- Department of Chemistry, University of California , Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Lab , Berkeley, California 94720, United States
| | - Hao Zhang
- Department of Chemistry, University of California , Berkeley, California 94720, United States
| | - Samuel W Eaton
- Department of Chemistry, University of California , Berkeley, California 94720, United States
| | - Yi Yu
- Department of Chemistry, University of California , Berkeley, California 94720, United States
| | - Shaul Aloni
- Molecular Foundry, Lawrence Berkeley National Lab , Berkeley, California 94720, United States
| | - Stephen R Leone
- Department of Chemistry, University of California , Berkeley, California 94720, United States
- Department of Physics, University of California , Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Lab , Berkeley, California 94720, United States
| | - Peidong Yang
- Department of Chemistry, University of California , Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Lab , Berkeley, California 94720, United States
- Kavli Nanoscience Institute , Berkeley, California 94720, United States
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7
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Tedeschi D, De Luca M, Fonseka HA, Gao Q, Mura F, Tan HH, Rubini S, Martelli F, Jagadish C, Capizzi M, Polimeni A. Long-Lived Hot Carriers in III-V Nanowires. NANO LETTERS 2016; 16:3085-93. [PMID: 27104870 DOI: 10.1021/acs.nanolett.6b00251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs.
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Affiliation(s)
- D Tedeschi
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - M De Luca
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - H A Fonseka
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - Q Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - F Mura
- Dipartimento di Chimica and Sapienza Nanoscience & Nanotechnology Lab (SNN-LAB), Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - H H Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - S Rubini
- Istituto Officina dei Materiali CNR , Basovizza SS 14 km 163.5, 34149 Trieste, Italy
| | - F Martelli
- Istituto per la Microelettronica e i Microsistemi CNR , Via del fosso del cavaliere 100, 00133 Roma, Italy
| | - C Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - M Capizzi
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - A Polimeni
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
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8
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Chauvin N, Mavel A, Patriarche G, Masenelli B, Gendry M, Machon D. Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires. NANO LETTERS 2016; 16:2926-2930. [PMID: 27046672 DOI: 10.1021/acs.nanolett.5b04646] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.
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Affiliation(s)
- Nicolas Chauvin
- Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon , INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France
| | - Amaury Mavel
- Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon , INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France
- Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon , Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully, France
| | - Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay , route de Nozay, F-91460 Marcoussis, France
| | - Bruno Masenelli
- Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon , INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France
| | - Michel Gendry
- Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon , Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully, France
| | - Denis Machon
- Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Université de Lyon 69622 Villeurbanne cedex, France
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9
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Zilli A, De Luca M, Tedeschi D, Fonseka HA, Miriametro A, Tan HH, Jagadish C, Capizzi M, Polimeni A. Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires. ACS NANO 2015; 9:4277-87. [PMID: 25801648 DOI: 10.1021/acsnano.5b00699] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.
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Affiliation(s)
- Attilio Zilli
- †Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
| | - Marta De Luca
- †Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
| | - Davide Tedeschi
- †Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
| | - H Aruni Fonseka
- ‡Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
| | - Antonio Miriametro
- †Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
| | - Hark Hoe Tan
- ‡Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
| | - Chennupati Jagadish
- ‡Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
| | - Mario Capizzi
- †Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
| | - Antonio Polimeni
- †Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
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10
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De Luca M, Zilli A, Fonseka HA, Mokkapati S, Miriametro A, Tan HH, Smith LM, Jagadish C, Capizzi M, Polimeni A. Polarized light absorption in wurtzite InP nanowire ensembles. NANO LETTERS 2015; 15:998-1005. [PMID: 25574578 DOI: 10.1021/nl5038374] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We investigate the absorption properties of ensembles of wurtzite (WZ) InP nanowires (NWs) by high-resolution polarization-resolved photoluminescence excitation (PLE) spectroscopy at T = 10 K. The degree of linear polarization of absorbed light, ρ(abs), resulting from the PLE spectra is governed by a competition between the dielectric mismatch effect and the WZ selection rules acting differently on different optical transitions. These two contributions are deconvoluted with the help of finite-difference time-domain simulations, thus providing information about the symmetry of the three highest valence bands (A, B, and C) of WZ InP and the extent of the spin-orbit interaction on these states. Moreover, ρ(abs) shows two characteristic dips corresponding to the two sharp A and B exciton resonances in the PLE spectra. A model developed for the dip in A provides the first experimental evidence of an enhancement in the dielectric mismatch effect originating from the Coulomb interaction between electron and hole.
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Affiliation(s)
- Marta De Luca
- Dipartimento di Fisica and CNISM, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
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11
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De Trizio L, Gaspari R, Bertoni G, Kriegel I, Moretti L, Scotognella F, Maserati L, Zhang Y, Messina G, Prato M, Marras S, Cavalli A, Manna L. Cu 3-x P Nanocrystals as a Material Platform for Near-Infrared Plasmonics and Cation Exchange Reactions. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2015; 27:1120-1128. [PMID: 25960605 PMCID: PMC4419285 DOI: 10.1021/cm5044792] [Citation(s) in RCA: 70] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2014] [Revised: 01/08/2015] [Indexed: 05/19/2023]
Abstract
Synthesis approaches to colloidal Cu3P nanocrystals (NCs) have been recently developed, and their optical absorption features in the near-infrared (NIR) have been interpreted as arising from a localized surface plasmon resonance (LSPR). Our pump-probe measurements on platelet-shaped Cu3-x P NCs corroborate the plasmonic character of this absorption. In accordance with studies on crystal structure analysis of Cu3P dating back to the 1970s, our density functional calculations indicate that this material is substoichiometric in copper, since the energy of formation of Cu vacancies in certain crystallographic sites is negative, that is, they are thermodynamically favored. Also, thermoelectric measurements point to a p-type behavior of the majority carriers from films of Cu3-x P NCs. It is likely that both the LSPR and the p-type character of our Cu3-x P NCs arise from the presence of a large number of Cu vacancies in such NCs. Motivated by the presence of Cu vacancies that facilitate the ion diffusion, we have additionally exploited Cu3-x P NCs as a starting material on which to probe cation exchange reactions. We demonstrate here that Cu3-x P NCs can be easily cation-exchanged to hexagonal wurtzite InP NCs, with preservation of the anion framework (the anion framework in Cu3-x P is very close to that of wurtzite InP). Intermediate steps in this reaction are represented by Cu3-x P/InP heterostructures, as a consequence of the fact that the exchange between Cu+ and In3+ ions starts from the peripheral corners of each NC and gradually evolves toward the center. The feasibility of this transformation makes Cu3-x P NCs an interesting material platform from which to access other metal phosphides by cation exchange.
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Affiliation(s)
- Luca De Trizio
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Roberto Gaspari
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Giovanni Bertoni
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
- IMEM-CNR, Parco Area
delle Scienze, 37/A, 43124 Parma, Parma, Italy
| | - Ilka Kriegel
- Department of Physics, Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano, Milano, Italy
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli 70/3, 20133 Milano, Milano, Italy
| | - Luca Moretti
- Department of Physics, Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano, Milano, Italy
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli 70/3, 20133 Milano, Milano, Italy
| | - Francesco Scotognella
- Department of Physics, Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano, Milano, Italy
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli 70/3, 20133 Milano, Milano, Italy
| | - Lorenzo Maserati
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Yang Zhang
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Gabriele
C. Messina
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Mirko Prato
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Sergio Marras
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
| | - Andrea Cavalli
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
- Department of Pharmacy and Biotechnology, University of Bologna, via Belmeloro 6, Bologna, Bologna I-40126, Italy
| | - Liberato Manna
- Department of Nanochemistry, CONCEPT Lab, Department of Nanostructures, and CompuNet, Istituto Italiano di Tecnologia (IIT), via Morego, 30, 16163 Genova, Genova, Italy
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Gao Q, Saxena D, Wang F, Fu L, Mokkapati S, Guo Y, Li L, Wong-Leung J, Caroff P, Tan HH, Jagadish C. Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. NANO LETTERS 2014; 14:5206-11. [PMID: 25115241 DOI: 10.1021/nl5021409] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
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Affiliation(s)
- Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, ‡Australian National Fabrication Facility, Research School of Physics and Engineering, and §Centre for Advanced Microscopy, The Australian National University , Canberra, ACT 0200, Australia
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13
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De Luca M, Polimeni A, Fonseka HA, Meaney AJ, Christianen PCM, Maan JC, Paiman S, Tan HH, Mura F, Jagadish C, Capizzi M. Magneto-optical properties of wurtzite-phase InP nanowires. NANO LETTERS 2014; 14:4250-4256. [PMID: 24972081 DOI: 10.1021/nl500870e] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μ exc) and g-factor (g exc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μ exc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |ge| = 1.4 for B⊥ĉ (where ge is the electron g-factor) and g exc = |ge - gh,//| = 3.5 for B//ĉ (where gh,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.
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Affiliation(s)
- M De Luca
- Dipartimento di Fisica and CNISM, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
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Perera S, Shi T, Fickenscher MA, Jackson HE, Smith LM, Yarrison-Rice JM, Paiman S, Gao Q, Tan HH, Jagadish C. Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires. NANO LETTERS 2013; 13:5367-5372. [PMID: 24134708 DOI: 10.1021/nl4028878] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We use polarized photoluminescence excitation spectroscopy to observe the energy and symmetry of the predicted second conduction band in 130 nm diameter wurtzite InP nanowires. We find direct spectroscopic signatures for optical transitions among the A, B, and C hole bands and both the first and the second conduction bands. We determine that the splitting between the first and second conduction bands is 228 ± 7 meV in excellent agreement with theory. From these energies we show that the spin-orbit energy changes substantially between zinc blende and wurtzite InP. We discuss the two quite different solutions within the quasi-cubic approximation and the implications for these measurements. Finally, the observation of well-defined optical transitions between the B- and C-hole bands and the second conduction band suggests that either the theoretical description of the second conduction band as possessing Γ8 symmetry is incomplete, or other interactions are enabling these forbidden transitions.
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Affiliation(s)
- Saranga Perera
- Department of Physics, University of Cincinnati , Cincinnati, Ohio 45221-0011, United States
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