1
|
Raghuraman S, Vasudevan RK, Yang JC, Kelley KP, Domingo N, Jesse S. Imaging Bias-Driven Domain Wall Motion With Scanning Oscillator Piezoresponse Force Microscopy. SMALL METHODS 2025:e2401565. [PMID: 39791282 DOI: 10.1002/smtd.202401565] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2024] [Revised: 12/13/2024] [Indexed: 01/12/2025]
Abstract
Understanding ferroelectric domain wall dynamics at the nanoscale across a broad range of timescales requires measuring domain wall position under different applied electric fields. The success of piezoresponse force microscopy (PFM) as a tool to apply local electric fields at different positions and imaging their changing position, together with the information obtained from associated switching spectroscopies has fueled numerous studies of the dynamics of ferroelectric domains to determine the impact of intrinsic parameters such as crystalline order, defects and pinning centers, as well as boundary conditions such as environment. However, the investigation of sub-coercive reversible domain wall vibrational modes requires the development of new tools that enable visualizing domain wall motion under varying applied fields with high temporal and spatial resolution while also accounting for spurious electrostatic effects. Here, scanning oscillator piezoresponse force microscopy extends the investigation of domain wall dynamics to new regimes, providing direct visualization of domain wall position as a function of an external electric field that varies in time and location. This enables studying the energetics of field-driven ferroelectric domain wall motion, which is shown to obey a thermally activated flow regime in the millisecond timescale.
Collapse
Affiliation(s)
- Shivaranjan Raghuraman
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, TN 37830, USA
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, TN 37830, USA
| | - Jan-Chi Yang
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, TN 37830, USA
| | - Neus Domingo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, TN 37830, USA
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, TN 37830, USA
| |
Collapse
|
2
|
Abstract
The topographies of various surfaces have been studied in many fields due to the significant influence that surfaces have on the practical performance of a given sample. A comprehensive evaluation requires the assistance of fractal analysis, which is of significant importance for modern science and technology. Due to the deep insights of fractal theory, fractal analysis on surface topographies has been widely applied and recommended. In this paper, the remarkable uprising in recent decades of fractal analysis on the surfaces of thin films, an essential domain of surface engineering, is reviewed. By summarizing the methods used to calculate fractal dimension and the deposition techniques of thin films, the results and trends of fractal analysis are associated with the microstructure, deposition parameters, etc. and this contributes profoundly to exploring the mechanism of film growth under different conditions. Choosing appropriate methods of surface characterization and calculation methods to study diverse surfaces is the main challenge of current research on thin film surface topography by using fractal theory. Prospective developing trends are proposed based on the data extraction and statistics of the published literature in this field.
Collapse
|
3
|
Wang H, Zeng K. Humidity Effects on Domain Structure and Polarization Switching of Pb(Zn 1/3Nb 2/3)O 3-x%PbTiO 3 (PZN-x%PT) Single Crystals. MATERIALS (BASEL, SWITZERLAND) 2021; 14:2447. [PMID: 34065037 PMCID: PMC8125925 DOI: 10.3390/ma14092447] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2021] [Revised: 05/02/2021] [Accepted: 05/05/2021] [Indexed: 11/17/2022]
Abstract
The effect of relative humidity on the domain structure imaging and polarization switching process of Pb(Zn1/3Nb2/3)O3-x%PbTiO3 (PZN-x%PT) ferroelectric single crystals has been investigated by means of the piezoresponse force microscopy (PFM) and piezoresponse force spectroscopy (PFS) techniques. It was found that the PFM amplitude increases with the relative humidity, and that the ferroelectric hysteresis loops at different relative humidity levels show that the coercive bias decreases with the increase in relative humidity. These observed phenomena are attributed to the existence of the water layer between the probe tip and the sample surface in a humid atmosphere, which could affect the effect of the electric field distribution and screening properties at the ferroelectric sample surface. These results provide a better understanding of the water adsorption phenomena at the nanoscale in regard to the fundamental understanding of ferroelectrics' properties.
Collapse
Affiliation(s)
- Hongli Wang
- The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510650, China;
- Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Kaiyang Zeng
- Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore
| |
Collapse
|
4
|
Li H, Wang R, Han S, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. POLYM INT 2020. [DOI: 10.1002/pi.5980] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Huilin Li
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
- Henan Key Laboratory of Photovoltaic MaterialsHenan University Kaifeng PR China
| | - Ruopeng Wang
- College of Electronics and Information EngineeringShenzhen University Shenzhen PR China
| | - Su‐Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University Shenzhen PR China
| |
Collapse
|
5
|
Kwon O, Seol D, Lee D, Han H, Lindfors-Vrejoiu I, Lee W, Jesse S, Lee HN, Kalinin SV, Alexe M, Kim Y. Direct Probing of Polarization Charge at Nanoscale Level. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1703675. [PMID: 29134691 DOI: 10.1002/adma.201703675] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2017] [Revised: 09/25/2017] [Indexed: 06/07/2023]
Abstract
Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. However, the detection is unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm-2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The obtained results show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.
Collapse
Affiliation(s)
- Owoong Kwon
- School of Advanced Materials and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Daehee Seol
- School of Advanced Materials and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongkyu Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Hee Han
- Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, South Korea
| | | | - Woo Lee
- Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, South Korea
| | - Stephen Jesse
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Yunseok Kim
- School of Advanced Materials and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| |
Collapse
|