1
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Clericò V, Wójcik P, Vezzosi A, Rocci M, Demontis V, Zannier V, Díaz-Fernández Á, Díaz E, Bellani V, Domínguez-Adame F, Diez E, Sorba L, Bertoni A, Goldoni G, Rossella F. Spin-Resolved Magneto-Tunneling and Giant Anisotropic g-Factor in Broken Gap InAs-GaSb Core-Shell Nanowires. NANO LETTERS 2024; 24:790-796. [PMID: 38189790 PMCID: PMC10811674 DOI: 10.1021/acs.nanolett.3c02559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 12/20/2023] [Accepted: 12/26/2023] [Indexed: 01/09/2024]
Abstract
We experimentally and computationally investigate the magneto-conductance across the radial heterojunction of InAs-GaSb core-shell nanowires under a magnetic field, B, up to 30 T and at temperatures in the range 4.2-200 K. The observed double-peak negative differential conductance markedly blue-shifts with increasing B. The doublet accounts for spin-polarized currents through the Zeeman split channels of the InAs (GaSb) conduction (valence) band and exhibits strong anisotropy with respect to B orientation and marked temperature dependence. Envelope function approximation and a semiclassical (WKB) approach allow to compute the magnetic quantum states of InAs and GaSb sections of the nanowire and to estimate the B-dependent tunneling current across the broken-gap interface. Disentangling different magneto-transport channels and a thermally activated valence-to-valence band transport current, we extract the g-factor from the spin-up and spin-down dI/dV branch dispersion, revealing a giant, strongly anisotropic g-factor in excess of 60 (100) for the radial (tilted) field configurations.
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Affiliation(s)
- Vito Clericò
- Nanolab-Nanotechnology
Group, Departamento de Física Fundamental, Universidad de Salamanca, Plaza de la Merced, s/n., 37008-Salamanca, Spain
| | - Pawel Wójcik
- AGH
University of Krakow, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, 30-059 Krakow, Poland
| | - Andrea Vezzosi
- Dipartimento
di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/a, I-41125 Modena, Italy
| | - Mirko Rocci
- NEST,
Scuola Normale Superiore e Istituto di Nanoscienze-CNR, Piazza san Silvestro 12, I-56127 Pisa, Italy
| | - Valeria Demontis
- NEST,
Scuola Normale Superiore e Istituto di Nanoscienze-CNR, Piazza san Silvestro 12, I-56127 Pisa, Italy
- Department
of Physics, University of Cagliari, S.P. Monserrato-Sestu, Monserrato, 09042, Italy
| | - Valentina Zannier
- NEST,
Scuola Normale Superiore e Istituto di Nanoscienze-CNR, Piazza san Silvestro 12, I-56127 Pisa, Italy
| | - Álvaro Díaz-Fernández
- GISC, Departamento
de Física de Materiales, Universidad
Complutense de Madrid, Avenida Complutense, s/n, Ciudad Universitaria, 28040 Madrid, Spain
| | - Elena Díaz
- GISC, Departamento
de Física de Materiales, Universidad
Complutense de Madrid, Avenida Complutense, s/n, Ciudad Universitaria, 28040 Madrid, Spain
| | - Vittorio Bellani
- Nanolab-Nanotechnology
Group, Departamento de Física Fundamental, Universidad de Salamanca, Plaza de la Merced, s/n., 37008-Salamanca, Spain
- Dipartimento
di Fisica, Università di Pavia, Via Agostino Bassi, 6, 27100 Pavia, Italy
| | - Francisco Domínguez-Adame
- GISC, Departamento
de Física de Materiales, Universidad
Complutense de Madrid, Avenida Complutense, s/n, Ciudad Universitaria, 28040 Madrid, Spain
| | - Enrique Diez
- Nanolab-Nanotechnology
Group, Departamento de Física Fundamental, Universidad de Salamanca, Plaza de la Merced, s/n., 37008-Salamanca, Spain
| | - Lucia Sorba
- NEST,
Scuola Normale Superiore e Istituto di Nanoscienze-CNR, Piazza san Silvestro 12, I-56127 Pisa, Italy
| | - Andrea Bertoni
- S3,
Istituto Nanoscienze-CNR, Via Campi 213/a, I-41125 Modena, Italy
| | - Guido Goldoni
- Dipartimento
di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/a, I-41125 Modena, Italy
| | - Francesco Rossella
- Dipartimento
di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/a, I-41125 Modena, Italy
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2
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Dhungana DS, Mallet N, Fazzini PF, Larrieu G, Cristiano F, Plissard SR. Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology. NANOTECHNOLOGY 2022; 33:485601. [PMID: 35998566 DOI: 10.1088/1361-6528/ac8bdb] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 08/23/2022] [Indexed: 06/15/2023]
Abstract
Integrating self-catalyzed InAs nanowires on Si(111) is an important step toward building vertical gate-all-around transistors. The complementary metal oxide semiconductor (CMOS) compatibility and the nanowire aspect ratio are two crucial parameters to consider. In this work, we optimize the InAs nanowire morphology by changing the growth mode from Vapor-Solid to Vapor-Liquid-Solid in a CMOS compatible process. We study the key role of the Hydrogen surface preparation on nanowire growths and bound it to a change of the chemical potential and adatoms diffusion length on the substrate. We transfer the optimized process to patterned wafers and adapt both the surface preparation and the growth conditions. Once group III and V fluxes are balances, aspect ratio can be improved by increasing the system kinetics. Overall, we propose a method for large scale integration of CMOS compatible InAs nanowire on silicon and highlight the major role of kinetics on the growth mechanism.
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Affiliation(s)
- Daya S Dhungana
- CNRS, LAAS-CNRS, Université de Toulouse, F-31400, Toulouse, France
| | - Nicolas Mallet
- CNRS, LAAS-CNRS, Université de Toulouse, F-31400, Toulouse, France
| | | | - Guilhem Larrieu
- CNRS, LAAS-CNRS, Université de Toulouse, F-31400, Toulouse, France
| | - Fuccio Cristiano
- CNRS, LAAS-CNRS, Université de Toulouse, F-31400, Toulouse, France
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3
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Arif O, Zannier V, Rossi F, Ercolani D, Beltram F, Sorba L. Self-Catalyzed InSb/InAs Quantum Dot Nanowires. NANOMATERIALS 2021; 11:nano11010179. [PMID: 33450840 PMCID: PMC7828319 DOI: 10.3390/nano11010179] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 01/08/2021] [Accepted: 01/10/2021] [Indexed: 11/16/2022]
Abstract
The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.
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Affiliation(s)
- Omer Arif
- NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (D.E.); (F.B.); (L.S.)
| | - Valentina Zannier
- NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (D.E.); (F.B.); (L.S.)
- Correspondence: ; Tel.: +39-050-509-123(474)
| | - Francesca Rossi
- IMEM–CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy;
| | - Daniele Ercolani
- NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (D.E.); (F.B.); (L.S.)
| | - Fabio Beltram
- NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (D.E.); (F.B.); (L.S.)
| | - Lucia Sorba
- NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (D.E.); (F.B.); (L.S.)
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4
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Grégoire G, Gil E, Zeghouane M, Bougerol C, Hijazi H, Castelluci D, Dubrovskii VG, Trassoudaine A, Goktas NI, LaPierre RR, André Y. Long catalyst-free InAs nanowires grown on silicon by HVPE. CrystEngComm 2021. [DOI: 10.1039/d0ce01385d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.
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Affiliation(s)
- Gabin Grégoire
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | - Evelyne Gil
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | - Mohammed Zeghouane
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | | | | | - Dominique Castelluci
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | | | - Agnès Trassoudaine
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | | | - Ray R. LaPierre
- Department of Engineering Physics
- McMaster University
- Hamilton
- Canada
| | - Yamina André
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
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5
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Del Giudice F, Becker J, de Rose C, Döblinger M, Ruhstorfer D, Suomenniemi L, Treu J, Riedl H, Finley JJ, Koblmüller G. Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties. NANOSCALE 2020; 12:21857-21868. [PMID: 33107547 DOI: 10.1039/d0nr05666a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ultrathin InAs nanowires (NW) with a one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters below 20 nm. The first approach exploits direct vapor-solid growth to tune the NW diameter by interwire spacing, mask opening size and growth time. The second scheme explores a unique reverse-reaction growth by which the sidewalls of InAs NWs are thermally decomposed under controlled arsenic flux and annealing time. Interesting kinetically limited dependencies between interwire spacing and thinning dynamics are found, yielding diameters as low as 12 nm for sparse NW arrays. We clearly verify the 1D sub-band structure in ultrathin NWs by pronounced conductance steps in low-temperature transport measurements using back-gated NW-field effect transistors. Correlated simulations reveal single- and double degenerate conductance steps, which highlight the rotational hexagonal symmetry and reproduce the experimental traces in the diffusive 1D transport limit. Modelling under the realistic back-gate configuration further evidences regimes that lead to asymmetric carrier distribution and breakdown of the degeneracy depending on the gate bias.
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Affiliation(s)
- F Del Giudice
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.
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6
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García Núñez C, Braña AF, López N, Pau JL, García BJ. Single GaAs nanowire based photodetector fabricated by dielectrophoresis. NANOTECHNOLOGY 2020; 31:225604. [PMID: 32187022 DOI: 10.1088/1361-6528/ab76ee] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mechanical manipulation of nanowires (NWs) for their integration in electronics is still problematic because of their reduced dimensions, risking to produce mechanical damage to the NW structure and electronic properties during the assembly process. In this regard, contactless NW manipulation based methods using non-uniform electric fields, like dielectrophoresis (DEP) are usually much softer than mechanical methods, offering a less destructive alternative for integrating nanostructures in electronic devices. Here, we report a feasible and reproducible dielectrophoretic method to assemble single GaAs NWs (with radius 35-50 nm, and lengths 3-5 μm) on conductive electrodes layout with assembly yields above 90% per site, and alignment yields of 95%. The electrical characteristics of the dielectrophoretic contact formed between a GaAs NW and conductive electrodes have been measured, observing Schottky barrier like contacts. Our results also show the fast fabrication of diodes with rectifying characteristics due to the formation of a low-resistance contact between the Ga catalytic droplet at the tip of the NW when using Al doped ZnO as electrode. The current-voltage characteristics of a single Ga-terminated GaAs NW measured in dark and under illumination exhibit a strong sensitivity to visible light under forward bias conditions (around two orders of magnitude), mainly produced by a change on the series resistance of the device.
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Affiliation(s)
- Carlos García Núñez
- Electronics and Semiconductors Group (ELySE), Applied Physics Department, Universidad Autónoma de Madrid (UAM), 28049 Madrid, Spain. Scottish Universities Physics Alliance (SUPA), Institute of Thin Films, Sensors & Imaging (TFSI), University of the West of Scotland (UWS), Paisley PA1 2BE, United Kingdom
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7
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Arif O, Zannier V, Dubrovskii VG, Shtrom IV, Rossi F, Beltram F, Sorba L. Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:nano10030494. [PMID: 32164178 PMCID: PMC7153585 DOI: 10.3390/nano10030494] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2020] [Revised: 02/28/2020] [Accepted: 03/06/2020] [Indexed: 06/10/2023]
Abstract
The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.
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Affiliation(s)
- Omer Arif
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
| | - Valentina Zannier
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
| | - Vladimir G. Dubrovskii
- School of Photonics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia;
| | - Igor V. Shtrom
- The Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia;
| | - Francesca Rossi
- IMEM—CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy
| | - Fabio Beltram
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
| | - Lucia Sorba
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
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8
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Baboli MA, Slocum MA, Kum H, Wilhelm TS, Polly SJ, Hubbard SM, Mohseni PK. Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping. CrystEngComm 2019. [DOI: 10.1039/c8ce01666f] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Self-assembly of InAs nanowire arrays with highest reported aspect ratios and number density by van der Waals epitaxy on graphene is presented.
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Affiliation(s)
- Mohadeseh A. Baboli
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Michael A. Slocum
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Hyun Kum
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Thomas S. Wilhelm
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Stephen J. Polly
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Seth M. Hubbard
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Parsian K. Mohseni
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
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9
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Bolshakov AD, Mozharov AM, Sapunov GA, Shtrom IV, Sibirev NV, Fedorov VV, Ubyivovk EV, Tchernycheva M, Cirlin GE, Mukhin IS. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2018; 9:146-154. [PMID: 29441260 PMCID: PMC5789400 DOI: 10.3762/bjnano.9.17] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2017] [Accepted: 11/14/2017] [Indexed: 06/08/2023]
Abstract
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm-3.
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Affiliation(s)
- Alexey D Bolshakov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
| | - Alexey M Mozharov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Georgiy A Sapunov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Igor V Shtrom
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
| | - Nickolay V Sibirev
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
| | - Vladimir V Fedorov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Evgeniy V Ubyivovk
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
| | - Maria Tchernycheva
- Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, France
| | - George E Cirlin
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Ivan S Mukhin
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
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10
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Gomes UP, Ercolani D, Zannier V, Battiato S, Ubyivovk E, Mikhailovskii V, Murata Y, Heun S, Beltram F, Sorba L. Heterogeneous nucleation of catalyst-free InAs nanowires on silicon. NANOTECHNOLOGY 2017; 28:065603. [PMID: 28071603 DOI: 10.1088/1361-6528/aa5252] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si(111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but careful choice of annealing and growth temperature allows us to strongly reduce the relative density of these islands and to realize samples with high nanowire yield.
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Affiliation(s)
- U P Gomes
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, I-56127 Pisa, Italy
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11
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Rocci M, Rossella F, Gomes UP, Zannier V, Rossi F, Ercolani D, Sorba L, Beltram F, Roddaro S. Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core-Shell Nanowires. NANO LETTERS 2016; 16:7950-7955. [PMID: 27960509 DOI: 10.1021/acs.nanolett.6b04260] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate tunable bistability and a strong negative differential resistance in InAs/GaSb core-shell nanowire devices embedding a radial broken-gap heterojunction. Nanostructures have been grown using a catalyst-free synthesis on a Si substrate. Current-voltage characteristics display a top peak-to-valley ratio of 4.8 at 4.2 K and 2.2 at room temperature. The Esaki effect can be modulated-or even completely quenched-by field effect, by controlling the band bending profile along the azimuthal angle of the radial heterostructure. Hysteretic behavior is also observed in the presence of a suitable resistive load. Our results indicate that high-quality broken-gap devices can be obtained using Au-free growth.
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Affiliation(s)
- M Rocci
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - F Rossella
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - U P Gomes
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - V Zannier
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - F Rossi
- IMEM-CNR ,Parco Area delle Scienze 37/A, I-43010 Parma, Italy
| | - D Ercolani
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - L Sorba
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - F Beltram
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
| | - S Roddaro
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy
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Dubrovskii VG, Sibirev NV, Berdnikov Y, Gomes UP, Ercolani D, Zannier V, Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires. NANOTECHNOLOGY 2016; 27:375602. [PMID: 27501469 DOI: 10.1088/0957-4484/27/37/375602] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions are observed in the first case. Au colloidal nanoparticles produce broader and asymmetric length distributions of InAs nanowires. However, the distributions can be strongly narrowed by removing the high temperature annealing step. The length distributions for the In-catalyzed growth are instead very broad. We develop a generic model that is capable of describing the observed behaviors by accounting for both the incubation time for nanowire growth and secondary nucleation of In droplets. These results allow us to formulate some general recipes for obtaining more uniform length distributions of III-V nanowires.
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Affiliation(s)
- V G Dubrovskii
- St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St. Petersburg, Russia. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
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Gao Q, Dubrovskii VG, Caroff P, Wong-Leung J, Li L, Guo Y, Fu L, Tan HH, Jagadish C. Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays. NANO LETTERS 2016; 16:4361-7. [PMID: 27253040 DOI: 10.1021/acs.nanolett.6b01461] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
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Affiliation(s)
- Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Vladimir G Dubrovskii
- St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Physical Technical Institute of the Russian Academy of Sciences , Politekhnicheskaya 26, 194021 St. Petersburg, Russia
- ITMO University , Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Li Li
- Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Yanan Guo
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
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Gomes UP, Ercolani D, Zannier V, David J, Gemmi M, Beltram F, Sorba L. Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon. NANOTECHNOLOGY 2016; 27:255601. [PMID: 27171601 DOI: 10.1088/0957-4484/27/25/255601] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on the nucleation and growth mechanism of self-catalyzed InAs nanowires (NWs) grown on Si (111) substrates by chemical beam epitaxy. Careful choices of the growth parameters lead to In-rich conditions such that the InAs NWs nucleate from an In droplet and grow by the vapor-liquid-solid mechanism while sustaining an In droplet at the tip. As the growth progresses, new NWs continue to nucleate on the Si (111) surface causing a spread in the NW size distribution. The observed behavior in NW nucleation and growth is described within a suitable existing theoretical model allowing us to extract relevant growth parameters. We argue that these results provide useful guidelines to rationally control the growth of self-catalyzed InAs NWs for various applications.
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Affiliation(s)
- U P Gomes
- NEST Scuola Normale Superiore and Istituto di Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
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