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Dubrovskii VG. Criterion for Selective Area Growth of III-V Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3698. [PMID: 36296889 PMCID: PMC9606971 DOI: 10.3390/nano12203698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 10/05/2022] [Accepted: 10/17/2022] [Indexed: 06/16/2023]
Abstract
A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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2
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Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. NANOMATERIALS 2022; 12:nano12142341. [PMID: 35889566 PMCID: PMC9320236 DOI: 10.3390/nano12142341] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 06/29/2022] [Accepted: 07/05/2022] [Indexed: 01/10/2023]
Abstract
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.
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3
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Wilson DP, Dubrovskii VG, LaPierre RR. Improving the yield of GaAs nanowires on silicon by Ga pre-deposition. NANOTECHNOLOGY 2021; 32:265301. [PMID: 33730697 DOI: 10.1088/1361-6528/abef93] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2021] [Accepted: 03/17/2021] [Indexed: 06/12/2023]
Abstract
GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.
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Affiliation(s)
- D P Wilson
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S4L7, Canada
| | - V G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034, St. Petersburg, Russia
| | - R R LaPierre
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S4L7, Canada
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Johnson S, Pokharel R, Lowe M, Kuchoor H, Nalamati S, Davis K, Rathnayake H, Iyer S. Study of patterned GaAsSbN nanowires using sigmoidal model. Sci Rep 2021; 11:4651. [PMID: 33633245 PMCID: PMC7907112 DOI: 10.1038/s41598-021-83973-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/21/2020] [Accepted: 02/05/2021] [Indexed: 01/31/2023] Open
Abstract
This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200-1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III-V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.
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Affiliation(s)
- Sean Johnson
- grid.261037.10000 0001 0287 4439Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411 USA
| | - Rabin Pokharel
- grid.261037.10000 0001 0287 4439Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401 USA
| | - Michael Lowe
- grid.261037.10000 0001 0287 4439Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411 USA
| | - Hirandeep Kuchoor
- grid.261037.10000 0001 0287 4439Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401 USA
| | - Surya Nalamati
- grid.261037.10000 0001 0287 4439Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411 USA
| | - Klinton Davis
- grid.266860.c0000 0001 0671 255XNanoscience, Joint School of Nanoscience and Nanoengineering, University of North Carolina At Greensboro, Greensboro, NC 27401 USA
| | - Hemali Rathnayake
- grid.266860.c0000 0001 0671 255XNanoscience, Joint School of Nanoscience and Nanoengineering, University of North Carolina At Greensboro, Greensboro, NC 27401 USA
| | - Shanthi Iyer
- grid.261037.10000 0001 0287 4439Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401 USA
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Sokolovskii AS, Robson MT, LaPierre RR, Dubrovskii VG. Modeling selective-area growth of InAsSb nanowires. NANOTECHNOLOGY 2019; 30:285601. [PMID: 30913550 DOI: 10.1088/1361-6528/ab1375] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
An analytical growth model is presented to explain the influence of antimony fractional flux on the morphology evolution of catalyst-free InAs1-x Sb x semiconductor nanowires grown by the selective-area vapor-solid mechanism on a Si (111) substrate by molecular beam epitaxy. Increasing Sb fractional flux promoted radial growth and suppressed axial growth, resulting in 'nano-disks'. This behavior is explained by a model of indium adatom diffusion along nanowire facets.
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Affiliation(s)
- A S Sokolovskii
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia. Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S4L7, Canada
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Dubrovskii VG. Evolution of the Length and Radius of Catalyst-Free III-V Nanowires Grown by Selective Area Epitaxy. ACS OMEGA 2019; 4:8400-8405. [PMID: 31459928 PMCID: PMC6648095 DOI: 10.1021/acsomega.9b00525] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Accepted: 04/24/2019] [Indexed: 06/10/2023]
Abstract
We present a new model for the length and radius evolution of catalyst-free III-V nanowires grown by selective area epitaxy. We consider simultaneous axial and radial growth of nanowires, which is more typical for this technique compared to the vapor-liquid-solid growth of nanowires. Analytic expressions for the time evolution of the nanowire length and radius are derived, showing the following properties. As long as the nanowire length is shorter than the collection length of group III atoms on the sidewalls, the length evolves superlinearly and the radius evolves linearly with time. For longer nanowires, both the length and radius increase sublinearly with time. The scaling growth laws are controlled by a single parameter that depends on group V flux. The model fits well the data on the selective area growth of InAs and GaAs nanowires by different techniques. Overall, these results can be used for controlling the catalyst-free growth of III-V nanowires and their morphology, including ternary III-V material systems.
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Hallberg RT, Messing ME, Dick KA. Nanowire morphology and particle phase control by tuning the In concentration of the foreign metal nanoparticle. NANOTECHNOLOGY 2019; 30:054005. [PMID: 30511656 DOI: 10.1088/1361-6528/aaefbe] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Controllable particle assisted growth (PAG) of III-V nanowires is today almost exclusively done with Au, Ga or In nanoparticles, whereas other metals often yield nanowires with uncontrolled growth directions. To improve the control of the initial growth direction in PAG, independent of choice of metal, we propose to initiate nanowire growth from a group-III-rich foreign metal particle. For III-V nanowire growth, the group III concentration of the particle can be made to increase or decrease with the relative supply of group III and group V material, which can be used to promote the liquid phase that is necessary for vapor-liquid-solid growth. In this paper, 30 nm Pd nanoparticles are used to develop growth conditions for In-rich PAG of InAs nanowires. The particle size evolution for different growth times and V/III ratios is correlated with changes in nanowire density and morphology. In addition, we demonstrate In-rich Co, Pd, Pt and Rh nanoparticles and optimized In-rich PAG from Au and Pd seeds. The Au and Pd seeded nanowires are remarkably similar and by tuning the particle composition we trigger a morphological change. The vertical nanowire morphology is associated with In-rich nanoparticles that contain a liquid phase. The curly nanowire morphology, with random growth directions have an In concentration less than or equal to that of the most In rich compound of the seed metal-In system.
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Mandl B, Keplinger M, Messing ME, Kriegner D, Wallenberg R, Samuelson L, Bauer G, Stangl J, Holý V, Deppert K. Self-Seeded Axio-Radial InAs-InAs 1-xP x Nanowire Heterostructures beyond "Common" VLS Growth. NANO LETTERS 2018; 18:144-151. [PMID: 29257691 DOI: 10.1021/acs.nanolett.7b03668] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs1-xPx material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs1-xPx segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates.
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Affiliation(s)
- Bernhard Mandl
- Semiconductor and Solid State Physics, Johannes Kepler University Linz , A-4040 Linz, Austria
| | - Mario Keplinger
- Semiconductor and Solid State Physics, Johannes Kepler University Linz , A-4040 Linz, Austria
| | | | - Dominik Kriegner
- Semiconductor and Solid State Physics, Johannes Kepler University Linz , A-4040 Linz, Austria
| | | | | | - Günther Bauer
- Semiconductor and Solid State Physics, Johannes Kepler University Linz , A-4040 Linz, Austria
| | - Julian Stangl
- Semiconductor and Solid State Physics, Johannes Kepler University Linz , A-4040 Linz, Austria
| | - Václav Holý
- Department of Condensed Matter Physics, Charles University , Ke Karlovu 5, 121 16 Prague, Czech Republic
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Dong Z, André Y, Dubrovskii VG, Bougerol C, Leroux C, Ramdani MR, Monier G, Trassoudaine A, Castelluci D, Gil E. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy. NANOTECHNOLOGY 2017; 28:125602. [PMID: 28140362 DOI: 10.1088/1361-6528/aa5c6b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h-1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.
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Affiliation(s)
- Zhenning Dong
- Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France
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10
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Vukajlovic-Plestina J, Dubrovskii VG, Tütüncuoǧlu G, Potts H, Ricca R, Meyer F, Matteini F, Leran JB, I Morral AF. Molecular beam epitaxy of InAs nanowires in SiO 2 nanotube templates: challenges and prospects for integration of III-Vs on Si. NANOTECHNOLOGY 2016; 27:455601. [PMID: 27698287 DOI: 10.1088/0957-4484/27/45/455601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.
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Affiliation(s)
- Jelena Vukajlovic-Plestina
- Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
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Dubrovskii VG, Sibirev NV, Berdnikov Y, Gomes UP, Ercolani D, Zannier V, Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires. NANOTECHNOLOGY 2016; 27:375602. [PMID: 27501469 DOI: 10.1088/0957-4484/27/37/375602] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions are observed in the first case. Au colloidal nanoparticles produce broader and asymmetric length distributions of InAs nanowires. However, the distributions can be strongly narrowed by removing the high temperature annealing step. The length distributions for the In-catalyzed growth are instead very broad. We develop a generic model that is capable of describing the observed behaviors by accounting for both the incubation time for nanowire growth and secondary nucleation of In droplets. These results allow us to formulate some general recipes for obtaining more uniform length distributions of III-V nanowires.
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Affiliation(s)
- V G Dubrovskii
- St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St. Petersburg, Russia. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
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12
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Gao Q, Dubrovskii VG, Caroff P, Wong-Leung J, Li L, Guo Y, Fu L, Tan HH, Jagadish C. Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays. NANO LETTERS 2016; 16:4361-7. [PMID: 27253040 DOI: 10.1021/acs.nanolett.6b01461] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
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Affiliation(s)
- Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Vladimir G Dubrovskii
- St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Physical Technical Institute of the Russian Academy of Sciences , Politekhnicheskaya 26, 194021 St. Petersburg, Russia
- ITMO University , Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Li Li
- Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Yanan Guo
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
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