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Bagri A, Jana A, Panchal G, Chowdhury S, Raj R, Kumar M, Gupta M, Reddy VR, Phase DM, Choudhary RJ. Light-Controlled Magnetoelastic Effects in Ni/BaTiO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18391-18401. [PMID: 37010892 DOI: 10.1021/acsami.2c21948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric-write magnetic-read memory devices. In ferromagnetic/ferroelectric heterostructures, the intertwined physical properties can be manipulated by an external perturbation, such as an electric field, temperature, or a magnetic field. Here, we demonstrate the remote-controlled tunability of these effects under visible, coherent, and polarized light. The combined surface and bulk magnetic study of domain-correlated Ni/BaTiO3 heterostructures reveals that the system shows strong sensitivity to the light illumination via the combined effect of piezoelectricity, ferroelectric polarization, spin imbalance, magnetostriction, and magnetoelectric coupling. A well-defined ferroelastic domain structure is fully transferred from a ferroelectric substrate to the magnetostrictive layer via interface strain transfer. The visible light illumination is used to manipulate the original ferromagnetic microstructure by the light-induced domain wall motion in ferroelectric substrates and consequently the domain wall motion in the ferromagnetic layer. Our findings mimic the attractive remote-controlled ferroelectric random-access memory write and magnetic random-access memory read application scenarios, hence facilitating a perspective for room temperature spintronic device applications.
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Affiliation(s)
- Anita Bagri
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Anupam Jana
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Gyanendra Panchal
- Department Methods for Characterization of Transport Phenomena in Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin 14109, Germany
| | - Sourav Chowdhury
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Rakhul Raj
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Manish Kumar
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, South Korea
| | - Mukul Gupta
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | | | | | - Ram J Choudhary
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
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Luo D, Zhang B, Sie EJ, Nyby CM, Fan Q, Shen X, Reid AH, Hoffmann MC, Weathersby S, Wen J, Qian X, Wang X, Lindenberg AM. Ultrafast Optomechanical Strain in Layered GeS. NANO LETTERS 2023; 23:2287-2294. [PMID: 36898060 DOI: 10.1021/acs.nanolett.2c05048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Strong coupling between light and mechanical strain forms the foundation for next-generation optical micro- and nano-electromechanical systems. Such optomechanical responses in two-dimensional materials present novel types of functionalities arising from the weak van der Waals bond between atomic layers. Here, by using structure-sensitive megaelectronvolt ultrafast electron diffraction, we report the experimental observation of optically driven ultrafast in-plane strain in the layered group IV monochalcogenide germanium sulfide (GeS). Surprisingly, the photoinduced structural deformation exhibits strain amplitudes of order 0.1% with a 10 ps fast response time and a significant in-plane anisotropy between zigzag and armchair crystallographic directions. Rather than arising due to heating, experimental and theoretical investigations suggest deformation potentials caused by electronic density redistribution and converse piezoelectric effects generated by photoinduced electric fields are the dominant contributors to the observed dynamic anisotropic strains. Our observations define new avenues for ultrafast optomechanical control and strain engineering within functional devices.
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Affiliation(s)
- Duan Luo
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Baiyu Zhang
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Edbert J Sie
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, United States
| | - Clara M Nyby
- Department of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Qingyuan Fan
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Alexander H Reid
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Matthias C Hoffmann
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen Weathersby
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jianguo Wen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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Liu K, Mao S, Zhang S, Zhou J. Photoinduced Rippling of Two-Dimensional Hexagonal Nitride Monolayers. NANO LETTERS 2022; 22:9006-9012. [PMID: 36342788 DOI: 10.1021/acs.nanolett.2c03238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Inducing structural changes and deformation using noninvasive methods, such as ultrafast laser technology, is an attractive route to multiple optomechanical and optoelectronic applications. Here, we show how photon excitation could accumulate in-plane stress and induce long-wavelength ripples in two-dimensional (2D) materials. Numerical results based on first-principles calculations and a continuum model predict that long-range nanoscale rippling could emerge under photon excitation in hexagonal nitride single atomic sheets. The photosoftened transverse acoustic mode dominates the out-of-plane distortion of the sheet, and the resultant rippling pattern strongly depends on the boundary condition. We reveal that the wavelength and height of the ripple scale as I-1/3 and I1/6, respectively, where I is the incident light energy flux. Our findings based on multiscale theory and simulations elucidate the interplay between carrier excitation, phonon dispersion, and long-range mechanical deformations, which could find potential usage in flexible electronics and electromechanical devices.
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Affiliation(s)
- Kun Liu
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
| | - Sheng Mao
- Department of Mechanics and Engineering Science, BIC-ESAT, College of Engineering, Peking University, Beijing100871, China
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei230026, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
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