1
|
Sciacca D, Berthe M, Ryan BJ, Peric N, Deresmes D, Biadala L, Boyaval C, Addad A, Lancry O, Makarem R, Legendre S, Hocrelle D, Panthani MG, Prévot G, Lhuillier E, Diener P, Grandidier B. Transport Properties of Methyl-Terminated Germanane Microcrystallites. NANOMATERIALS 2022; 12:nano12071128. [PMID: 35407246 PMCID: PMC9000464 DOI: 10.3390/nano12071128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2021] [Revised: 03/13/2022] [Accepted: 03/22/2022] [Indexed: 01/27/2023]
Abstract
Germanane is a two-dimensional material consisting of stacks of atomically thin germanium sheets. It’s easy and low-cost synthesis holds promise for the development of atomic-scale devices. However, to become an electronic-grade material, high-quality layered crystals with good chemical purity and stability are needed. To this end, we studied the electrical transport of annealed methyl-terminated germanane microcrystallites in both high vacuum and ultrahigh vacuum. Scanning electron microscopy of crystallites revealed two types of behavior which arise from the difference in the crystallite chemistry. While some crystallites are hydrated and oxidized, preventing the formation of good electrical contact, the four-point resistance of oxygen-free crystallites was measured with multiple tips scanning tunneling microscopy, yielding a bulk transport with resistivity smaller than 1 Ω·cm. When normalized by the crystallite thickness, the resistance compares well with the resistance of hydrogen-passivated germanane flakes found in the literature. Along with the high purity of the crystallites, a thermal stability of the resistance at 280 °C makes methyl-terminated germanane suitable for complementary metal oxide semiconductor back-end-of-line processes.
Collapse
Affiliation(s)
- Davide Sciacca
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Maxime Berthe
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Bradley J. Ryan
- Department of Chemical and Biological Engineering, Iowa State University, Ames, IA 50011, USA; (B.J.R.); (M.G.P.)
| | - Nemanja Peric
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Dominique Deresmes
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Louis Biadala
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Christophe Boyaval
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Ahmed Addad
- UMR 8207–UMET-Unité Matériaux et Transformations, Université de Lille, CNRS, INRAE, Centrale Lille, 59000 Lille, France;
| | - Ophélie Lancry
- HORIBA FRANCE SAS, 91120 Palaiseau, France; (O.L.); (R.M.); (S.L.); (D.H.)
| | - Raghda Makarem
- HORIBA FRANCE SAS, 91120 Palaiseau, France; (O.L.); (R.M.); (S.L.); (D.H.)
| | - Sébastien Legendre
- HORIBA FRANCE SAS, 91120 Palaiseau, France; (O.L.); (R.M.); (S.L.); (D.H.)
| | - Didier Hocrelle
- HORIBA FRANCE SAS, 91120 Palaiseau, France; (O.L.); (R.M.); (S.L.); (D.H.)
| | - Matthew G. Panthani
- Department of Chemical and Biological Engineering, Iowa State University, Ames, IA 50011, USA; (B.J.R.); (M.G.P.)
| | - Geoffroy Prévot
- Institut des NanoSciences de Paris, CNRS, Université de Sorbonne, 75005 Paris, France; (G.P.); (E.L.)
| | - Emmanuel Lhuillier
- Institut des NanoSciences de Paris, CNRS, Université de Sorbonne, 75005 Paris, France; (G.P.); (E.L.)
| | - Pascale Diener
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
| | - Bruno Grandidier
- UMR 8520-IEMN, Université de Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, Junia-ISEN, 59000 Lille, France; (D.S.); (M.B.); (N.P.); (D.D.); (L.B.); (C.B.); (P.D.)
- Correspondence:
| |
Collapse
|
2
|
Nguyen-Truong HT, Van On V, Lin MF. Optical absorption spectra of Xene and Xane (X =silic, german, stan). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:355701. [PMID: 34157695 DOI: 10.1088/1361-648x/ac0d82] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Accepted: 06/22/2021] [Indexed: 06/13/2023]
Abstract
We study optical absorption spectra of Xene and Xane (X = silic, german, stan). The results show that the optical absorption spectra of Xenes are dominated by a sharp peak near the origin due to direct interband transitions near theKpoint of the Brillouin zone. Meanwhile, the optical absorption spectra of Xanes are characterized by an excitonic peak. The Xenes are zero-gap materials with a Dirac cone at theKpoint, whereas Xanes are semiconductors with sizable band gaps. The quasiparticle band gaps of silicane, germanane, and stanane are 3.60, 2.21, and 1.35 eV, respectively; their exciton binding energies are 0.40, 0.33, and 0.20 eV, respectively.
Collapse
Affiliation(s)
- Hieu T Nguyen-Truong
- Laboratory of Applied Physics, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam
- Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam
| | - Vo Van On
- Institute for Science and Technology Development, Thu Dau Mot University, Thu Dau Mot City, Vietnam
| | - Ming-Fa Lin
- Department of Physics/QTC/Hi-GEM, National Cheng Kung University, Tainan, Taiwan
| |
Collapse
|
3
|
González-García A, López-Pérez W, González-Hernández R, Bacaksiz C, Šabani D, Milošević MV, Peeters FM. Transition-metal adatoms on 2D-GaAs: a route to chiral magnetic 2D materials by design. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:145803. [PMID: 33503605 DOI: 10.1088/1361-648x/abe077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Accepted: 01/27/2021] [Indexed: 06/12/2023]
Abstract
Using relativistic density-functional calculations, we examine the magneto-crystalline anisotropy and exchange properties of transition-metal atoms adsorbed on 2D-GaAs. We show that single Mn and Mo atom (Co and Os) strongly bind on 2D-GaAs, and induce local out-of-plane (in-plane) magnetic anisotropy. When a pair of TM atoms is adsorbed on 2D-GaAs in a close range from each other, magnetisation properties change (become tunable) with respect to concentrations and ordering of the adatoms. In all cases, we reveal presence of strong Dzyaloshinskii-Moriya interaction. These results indicate novel pathways towards two-dimensional chiral magnetic materials by design, tailored for desired applications in magneto-electronics.
Collapse
Affiliation(s)
- A González-García
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - W López-Pérez
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
| | - R González-Hernández
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia
| | - C Bacaksiz
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
- Bremen Center for Computational Material Science (BCCMS), Bremen D-28359, Germany
- Computational Science Research Center, Beijing and Computational Science and Applied Research Institute Shenzhen, Shenzhen, People's Republic of China
| | - D Šabani
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| | - M V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| | - F M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, University of Antwerp, Belgium
| |
Collapse
|
4
|
Giousis T, Potsi G, Kouloumpis A, Spyrou K, Georgantas Y, Chalmpes N, Dimos K, Antoniou M, Papavassiliou G, Bourlinos AB, Kim HJ, Wadi VKS, Alhassan S, Ahmadi M, Kooi BJ, Blake G, Balazs DM, Loi MA, Gournis D, Rudolf P. Synthesis of 2D Germanane (GeH): a New, Fast, and Facile Approach. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202010404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Theodosis Giousis
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| | - Georgia Potsi
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
- current address: Department of Materials Science and Engineering Cornell University Ithaca NY 14853 USA
| | - Antonios Kouloumpis
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
- current address: Department of Materials Science and Engineering Cornell University Ithaca NY 14853 USA
| | - Konstantinos Spyrou
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
| | - Yiannis Georgantas
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
- current address: Department of Materials National Graphene Institute Henry Royce Institute University of Manchester Oxford Road Manchester M13 9PL United Kingdom
| | - Nikolaos Chalmpes
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
| | - Konstantinos Dimos
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
- current address: Department of Materials Science University of Patras GR-26504 Patras Greece
| | | | - Georgios Papavassiliou
- Institute of Nanoscience and Nanotechnology NCSR “DEMOKRITOS” 15310 Ag. Paraskevi-Attikis Athens Greece
| | | | - Hae Jin Kim
- Nano-Bio Electron Microscopy Research Group Korea Basic Science Institute Yuseong-gu Daejeon Republic of Korea
| | - Vijay Kumar Shankarayya Wadi
- Department of Chemical Engineering Khalifa University of Science and Technology The Petroleum Institute PO Box 2533 Abu Dhabi United Arab Emirates
| | - Saeed Alhassan
- Department of Chemical Engineering Khalifa University of Science and Technology The Petroleum Institute PO Box 2533 Abu Dhabi United Arab Emirates
| | - Majid Ahmadi
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| | - Bart J. Kooi
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| | - Graeme Blake
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| | - Daniel M. Balazs
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| | - Maria A. Loi
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| | - Dimitrios Gournis
- Department of Materials Science & Engineering University of Ioannina 45110 Ioannina Greece
| | - Petra Rudolf
- Zernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The Netherlands
| |
Collapse
|
5
|
Giousis T, Potsi G, Kouloumpis A, Spyrou K, Georgantas Y, Chalmpes N, Dimos K, Antoniou MK, Papavassiliou G, Bourlinos AB, Kim HJ, Wadi VKS, Alhassan S, Ahmadi M, Kooi BJ, Blake G, Balazs DM, Loi MA, Gournis D, Rudolf P. Synthesis of 2D Germanane (GeH): a New, Fast, and Facile Approach. Angew Chem Int Ed Engl 2020; 60:360-365. [PMID: 32866319 PMCID: PMC7821264 DOI: 10.1002/anie.202010404] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2020] [Revised: 08/21/2020] [Indexed: 11/10/2022]
Abstract
Germanane (GeH), a germanium analogue of graphane, has recently attracted considerable interest because its remarkable combination of properties makes it an extremely suitable candidate to be used as 2D material for field effect devices, photovoltaics, and photocatalysis. Up to now, the synthesis of GeH has been conducted by substituting Ca by H in a β-CaGe2 layered Zintl phase through topochemical deintercalation in aqueous HCl. This reaction is generally slow and takes place over 6 to 14 days. The new and facile protocol presented here allows to synthesize GeH at room temperature in a significantly shorter time (a few minutes), which renders this method highly attractive for technological applications. The GeH produced with this method is highly pure and has a band gap (Eg ) close to 1.4 eV, a lower value than that reported for germanane synthesized using HCl, which is promising for incorporation of GeH in solar cells.
Collapse
Affiliation(s)
- Theodosis Giousis
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece.,Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| | - Georgia Potsi
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece.,Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands.,current address: Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Antonios Kouloumpis
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece.,Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands.,current address: Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Konstantinos Spyrou
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece
| | - Yiannis Georgantas
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece.,Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands.,current address: Department of Materials, National Graphene Institute, Henry Royce Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Nikolaos Chalmpes
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece
| | - Konstantinos Dimos
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece.,current address: Department of Materials Science, University of Patras, GR-26504, Patras, Greece
| | | | - Georgios Papavassiliou
- Institute of Nanoscience and Nanotechnology, NCSR "DEMOKRITOS", 15310 Ag. Paraskevi-Attikis, Athens, Greece
| | | | - Hae Jin Kim
- Nano-Bio Electron Microscopy Research Group, Korea Basic Science Institute, Yuseong-gu, Daejeon, Republic of Korea
| | - Vijay Kumar Shankarayya Wadi
- Department of Chemical Engineering, Khalifa University of Science and Technology, The Petroleum Institute, PO Box 2533, Abu Dhabi, United Arab Emirates
| | - Saeed Alhassan
- Department of Chemical Engineering, Khalifa University of Science and Technology, The Petroleum Institute, PO Box 2533, Abu Dhabi, United Arab Emirates
| | - Majid Ahmadi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| | - Bart J Kooi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| | - Graeme Blake
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| | - Daniel M Balazs
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| | - Maria A Loi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| | - Dimitrios Gournis
- Department of Materials Science & Engineering, University of Ioannina, 45110, Ioannina, Greece
| | - Petra Rudolf
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747, AG, Groningen, The Netherlands
| |
Collapse
|
6
|
González-García A, López-Pérez W, González-Hernández R, Rivera-Julio J, Espejo C, Milośević MV, Peeters FM. Two-dimensional hydrogenated buckled gallium arsenide: an ab initio study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:145502. [PMID: 31822645 DOI: 10.1088/1361-648x/ab6043] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
First-principles calculations have been carried out to investigate the stability, structural and electronic properties of two-dimensional (2D) hydrogenated GaAs with three possible geometries: chair, zigzag-line and boat configurations. The effect of van der Waals interactions on 2D H-GaAs systems has also been studied. These configurations were found to be energetic and dynamic stable, as well as having a semiconducting character. Although 2D GaAs adsorbed with H tends to form a zigzag-line configuration, the energy differences between chair, zigzag-line and boat are very small which implies the metastability of the system. Chair and boat configurations display a [Formula: see text]-[Formula: see text] direct bandgap nature, while pristine 2D-GaAs and zigzag-line are indirect semiconductors. The bandgap sizes of all configurations are also hydrogen dependent, and wider than that of pristine 2D-GaAs with both PBE and HSE functionals. Even though DFT-vdW interactions increase the adsorption energies and reduce the equilibrium distances of H-GaAs systems, it presents, qualitatively, the same physical results on the stability and electronic properties of our studied systems with PBE functional. According to our results, 2D buckled gallium arsenide is a good candidate to be synthesized by hydrogen surface passivation as its group III-V partners 2D buckled gallium nitride and boron nitride. The hydrogenation of 2D-GaAs tunes the bandgap of pristine 2D-GaAs, which makes it a potential candidate for optoelectronic applications in the blue and violet ranges of the visible electromagnetic spectrum.
Collapse
Affiliation(s)
- A González-García
- Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia. Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
| | | | | | | | | | | | | |
Collapse
|