Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum

In Situ Time-of-Flight Mass Spectrometry of Ionic Fragments Induced by Focused Electron Beam Irradiation: Investigation of Electron Driven Surface Chemistry inside an SEM under High Vacuum

Recent developments in nanoprinting using focused electron beams have created a need to develop analysis methods for the products of electron-induced fragmentation of different metalorganic compounds. The original approach used here is termed focused-electron-beam-induced mass spectrometry (FEBiMS). FEBiMS enables the investigation of the fragmentation of electron-sensitive materials during irradiation within the typical primary electron beam energy range of a scanning electron microscope (0.5 to 30 keV) and high vacuum range. The method combines a typical scanning electron microscope with an ion-extractor-coupled mass spectrometer setup collecting the charged fragments generated by the focused electron beam when impinging on the substrate material. The FEBiMS of fragments obtained during 10 keV electron irradiation of grains of silver and copper carboxylates and shows that the carboxylate ligand dissociates into many smaller volatile fragments. Furthermore, in situ FEBiMS was performed on carbonyls of ruthenium (solid) and during electron-beam-induced deposition, using tungsten carbonyl (inserted via a gas injection system). Loss of carbonyl ligands was identified as the main channel of dissociation for electron irradiation of these carbonyl compounds. The presented results clearly indicate that FEBiMS analysis can be expanded to organic, inorganic, and metal organic materials used in resist lithography, ice (cryo-)lithography, and focused-electron-beam-induced deposition and becomes, thus, a valuable versatile analysis tool to study both fundamental and process parameters in these nanotechnology fields.

Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors

The increasingly complex nanoscale three-dimensional and multilayered structures utilized in nanoelectronic, catalytic, and energy conversion/storage devices necessitate novel substrate-selective material deposition approaches featuring bottom-up and self-aligned precision processing. Here, we demonstrate the area-selective atomic layer deposition (AS-ALD) of two noble metals, Pt and Pd, by using a plasma-polymerized fluorocarbon layer as growth inhibition surfaces. The contact angle, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy measurements were performed to investigate the blocking ability of polymerized fluorocarbon (CFx) layers against ALD-grown metal films. Both Pt and Pd showed significant nucleation delays on fluorocarbon surfaces. Self-aligned film deposition is confirmed using this strategy by growing Pt and Pd on the microscale lithographically patterned CFx/Si samples. CFx blocking layer degradation during ozone exposure was analyzed using XPS measurements, which confirmed the oxygen physisorption as the main responsible surface reaction with further hydroxyl group formation on the CFx surface. Our work reveals that the CFx layer is compatible with an ozone coreactant until the blocking polymer cannot withstand oxygen physisorption. Our results could potentially be used to investigate and develop radical-assisted AS-ALD processes for a wider selection of materials.