1
|
Huynh T, Ngo TD, Choi H, Choi M, Lee W, Nguyen TD, Tran TT, Lee K, Hwang JY, Kim J, Yoo WJ. Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3694-3702. [PMID: 38214703 DOI: 10.1021/acsami.3c16229] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Doping is one of the most difficult technological challenges for realizing reliable two-dimensional (2D) material-based semiconductor devices, arising from their ultrathinness. Here, we systematically investigate the impact of different types of nonstoichiometric solid MOx (M are W or Mo) dopants obtained by oxidizing transition metal dichalcogenides (TMDs: WSe2 or MoS2) formed on graphene FETs, which results in p-type doping along with disorders. From the results obtained in this study, we were able to suggest an analytical technique to optimize the optimal UV-ozone (UVO) treatment to achieve high p-type doping concentration in graphene FETs (∼2.5 × 1013 cm-2 in this study) without generating defects, mainly by analyzing the time dependency of D and D' peaks measured by Raman spectroscopy. Furthermore, an analysis of the structure of graphene sheets using TEM indicates that WOx plays a better protective role in graphene, compared to MoOx, suggesting that WOx is more effective for preventing the degradation of graphene during UVO treatment. To enhance the practical application aspect of our work, we have fabricated a graphene photodetector by selectively doping the graphene through oxidized TMDs, creating a p-n junction, which resulted in improved photoresponsivity compared to the intrinsic graphene device. Our results offer a practical guideline for the utilization of surface charge transfer doping of graphene toward CMOS applications.
Collapse
Affiliation(s)
- Tuyen Huynh
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| | - Tien Dat Ngo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| | - Hyungyu Choi
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| | - Minsup Choi
- Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Korea
| | - Wonki Lee
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju-gun, Jeolabuk-do 55324, Korea
| | - Tuan Dung Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Gyeonggi-do 16419, Korea
| | - Trang Thu Tran
- Department of Energy Science, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| | - Kwangro Lee
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| | - Jun Yeon Hwang
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju-gun, Jeolabuk-do 55324, Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Korea
| |
Collapse
|
2
|
Mesple F, Walet NR, Trambly de Laissardière G, Guinea F, Došenović D, Okuno H, Paillet C, Michon A, Chapelier C, Renard VT. Giant Atomic Swirl in Graphene Bilayers with Biaxial Heterostrain. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306312. [PMID: 37615204 DOI: 10.1002/adma.202306312] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/10/2023] [Indexed: 08/25/2023]
Abstract
The study of moiré engineering started with the advent of van der Waals heterostructures, in which stacking 2D layers with different lattice constants leads to a moiré pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. A twist is now routinely used to adjust the properties of 2D materials. This study investigates a new type of moiré superlattice in bilayer graphene when one layer is biaxially strained with respect to the other-so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moiré engineering in van der Waals multilayers.
Collapse
Affiliation(s)
- Florie Mesple
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, Grenoble, 38000, France
| | - Niels R Walet
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PY, UK
| | - Guy Trambly de Laissardière
- Laboratoire de Physique Théorique et Modélisation (UMR 8089), CY Cergy Paris Université, CNRS, Cergy-Pontoise, 95302, France
| | - Francisco Guinea
- Imdea Nanoscience, Faraday 9, Madrid, 28015, Spain
- Donostia International Physics Center, Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | | | - Hanako Okuno
- University Grenoble Alpes, CEA, IRIG-MEM, Grenoble, 38054, France
| | - Colin Paillet
- Université Côte d'Azur, CNRS, CRHEA, Rue Bernard Grégory, Valbonne, 06560, France
| | - Adrien Michon
- Université Côte d'Azur, CNRS, CRHEA, Rue Bernard Grégory, Valbonne, 06560, France
| | - Claude Chapelier
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, Grenoble, 38000, France
| | - Vincent T Renard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, Grenoble, 38000, France
| |
Collapse
|
3
|
Villeneuve-Faure C, Boumaarouf A, Shah V, Gammon PM, Lüders U, Coq Germanicus R. SiC Doping Impact during Conducting AFM under Ambient Atmosphere. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5401. [PMID: 37570104 PMCID: PMC10419843 DOI: 10.3390/ma16155401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/25/2023] [Accepted: 07/28/2023] [Indexed: 08/13/2023]
Abstract
The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below the AFM conductive tip in ambient atmosphere may lead to a direct anodic oxidation of the SiC surface due to the formation of a water nanomeniscus. In this paper, the underlying effects of the anodization are experimentally investigated for SiC multilayers with different doping levels by studying gradual SiC epitaxial-doped layers with nitrogen (N) from 5 × 1017 to 1019 at/cm3. The presence of the water nanomeniscus is probed by the AFM and analyzed with the force-distance curve when a negative bias is applied to the AFM tip. From the water meniscus breakup distance measured without and with polarization, the water meniscus volume is increased by a factor of three under polarization. AFM experimental results are supported by electrostatic modeling to study oxide growth. By taking into account the presence of the water nanomeniscus, the surface oxide layer and the SiC doping level, a 2D-axisymmetric finite element model is developed to calculate the electric field distribution nearby the tip contact and the current distributions at the nanocontact. The results demonstrate that the anodization occurred for the conductive regime in which the current depends strongly to the doping; its threshold value is 7 × 1018 at/cm3 for anodization. Finally, the characterization of a classical planar SiC-MOSFET by C-AFM is examined. Results reveal the local oxidation mechanism of the SiC material at the surface of the MOSFET structure. AFM topographies after successive C-AFM measurements show that the local oxide created by anodization is located on both sides of the MOS channel; these areas are the locations of the highly n-type-doped zones. A selective wet chemical etching confirms that the oxide induced by local anodic oxidation is a SiOCH layer.
Collapse
Affiliation(s)
- Christina Villeneuve-Faure
- LAPLACE (Laboratoire Plasma et Conversion d’Energie), Université de Toulouse, CNRS, UPS, INPT, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, France;
| | - Abdelhaq Boumaarouf
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| | - Vishal Shah
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK; (V.S.); (P.M.G.)
| | - Peter M. Gammon
- School of Engineering, University of Warwick, Coventry CV4 7AL, UK; (V.S.); (P.M.G.)
| | - Ulrike Lüders
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| | - Rosine Coq Germanicus
- CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France; (A.B.); (U.L.)
| |
Collapse
|
4
|
Kim S, Ryu H, Tai S, Pedowitz M, Rzasa JR, Pennachio DJ, Hajzus JR, Milton DK, Myers-Ward R, Daniels KM. Real-time ultra-sensitive detection of SARS-CoV-2 by quasi-freestanding epitaxial graphene-based biosensor. Biosens Bioelectron 2022; 197:113803. [PMID: 34814034 PMCID: PMC8595974 DOI: 10.1016/j.bios.2021.113803] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2021] [Revised: 11/06/2021] [Accepted: 11/13/2021] [Indexed: 12/30/2022]
Abstract
We report the rapid detection of SARS-CoV-2 in infected patients (mid-turbinate swabs and exhaled breath aerosol samples) in concentrations as low as 60 copies/mL of the virus in seconds by electrical transduction of the SARS-CoV-2 S1 spike protein antigen via SARS-CoV-2 S1 spike protein antibodies immobilized on bilayer quasi-freestanding epitaxial graphene without gate or signal amplification. The sensor demonstrates the spike protein antigen detection in a concentration as low as 1 ag/mL. The heterostructure of the SARS-CoV-2 antibody/graphene-based sensor is developed through a simple and low-cost fabrication technique. Furthermore, sensors integrated into a portable testing unit distinguished B.1.1.7 variant positive samples from infected patients (mid-turbinate swabs and saliva samples, 4000-8000 copies/mL) with a response time of as fast as 0.6 s. The sensor is reusable, allowing for reimmobilization of the crosslinker and antibodies on the biosensor after desorption of biomarkers by NaCl solution or heat treatment above 40 °C.
Collapse
Affiliation(s)
- Soaram Kim
- Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, 20742, USA; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA.
| | - Heeju Ryu
- Vaccine and Infectious Diseases Division, Fred Hutchinson Cancer Research Center, Seattle, WA, 98109, USA
| | - Sheldon Tai
- Maryland Institute for Applied Environmental Health, University of Maryland School of Public Health, College Park, MD, 20742, USA
| | - Michael Pedowitz
- Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, 20742, USA; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - John Robertson Rzasa
- Fischell Department of Bioengineering, University of Maryland, College Park, MD, 20742, USA
| | | | | | - Donald K Milton
- Maryland Institute for Applied Environmental Health, University of Maryland School of Public Health, College Park, MD, 20742, USA
| | | | - Kevin M Daniels
- Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, 20742, USA; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| |
Collapse
|
5
|
Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation. NANOMATERIALS 2022; 12:nano12030378. [PMID: 35159722 PMCID: PMC8839219 DOI: 10.3390/nano12030378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2021] [Revised: 01/04/2022] [Accepted: 01/21/2022] [Indexed: 02/04/2023]
Abstract
Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.
Collapse
|
6
|
Kakanakova-Georgieva A, Ivanov IG, Suwannaharn N, Hsu CW, Cora I, Pécz B, Giannazzo F, Sangiovanni DG, Gueorguiev GK. MOCVD of AlN on epitaxial graphene at extreme temperatures. CrystEngComm 2021. [DOI: 10.1039/d0ce01426e] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Appearance of luminescent centers with narrow spectral emission at room temperature in nanometer thin AlN is reported.
Collapse
Affiliation(s)
| | - Ivan G. Ivanov
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- 581 83 Linköping
- Sweden
| | - Nattamon Suwannaharn
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- 581 83 Linköping
- Sweden
| | - Chih-Wei Hsu
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- 581 83 Linköping
- Sweden
| | - Ildikó Cora
- Centre for Energy Research
- Institute of Technical Physics and Materials Science
- Budapest
- Hungary
| | - Béla Pécz
- Centre for Energy Research
- Institute of Technical Physics and Materials Science
- Budapest
- Hungary
| | - Filippo Giannazzo
- Consiglio Nazionale delle Ricerche
- Istituto per la Microelettronica e Microsistemi
- Catania
- Italy
| | - Davide G. Sangiovanni
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- 581 83 Linköping
- Sweden
| | - Gueorgui K. Gueorguiev
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- 581 83 Linköping
- Sweden
| |
Collapse
|
7
|
Kakanakova-Georgieva A, Gueorguiev GK, Sangiovanni DG, Suwannaharn N, Ivanov IG, Cora I, Pécz B, Nicotra G, Giannazzo F. Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface. NANOSCALE 2020; 12:19470-19476. [PMID: 32960193 DOI: 10.1039/d0nr04464d] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene. From the wide range of temperatures which can be covered in the same MOCVD reactor, the deposition was performed at the selected temperatures of 700, 900, and 1240 °C. The characterization of the structures by atomic force microscopy, electron microscopy and Raman spectroscopy revealed a broad range of surface nucleation and intercalation phenomena. These phenomena included the abundant formation of nucleation sites on graphene, the fragmentation of the graphene layers which accelerated with the deposition temperature, the delivery of excess precursor-derived carbon adatoms to the surface, as well as intercalation of sub-layers of aluminum atoms at the graphene/SiC interface. The conceptual understanding of these nanoscale phenomena was supported by our previous comprehensive ab initio molecular dynamics (AIMD) simulations of the surface reaction of trimethylaluminum, (CH3)3Al, precursor with graphene. A case of applying trimethylindium, (CH3)3In, precursor to epitaxial graphene was considered in a comparative way.
Collapse
|