1
|
Rossi M, van Schijndel TAJ, Lueb P, Badawy G, Jung J, Peeters WHJ, Kölling S, Moutanabbir O, Verheijen MA, Bakkers EPAM. Stemless InSb nanowire networks and nanoflakes grown on InP. NANOTECHNOLOGY 2024; 35:415602. [PMID: 38991513 DOI: 10.1088/1361-6528/ad61ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 07/11/2024] [Indexed: 07/13/2024]
Abstract
Among the experimental realization of fault-tolerant topological circuits are interconnecting nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks formed by merging are potential candidates. Yet, their growth requires a foreign material stem usually made of InP-InAs. This stem imposes limitations, which include restricting the size of the nanowire network, inducing disorder through grain boundaries and impurity incorporation. Here, we omit the stem allowing for the growth of stemless InSb nanowire networks on an InP substrate. To enable the growth without the stem, we show that a preconditioning step using arsine (AsH3) is required before InSb growth. High-yield of stemless nanowire growth is achieved by patterning the substrate with a selective-area mask with nanohole cavities, containing restricted gold droplets from which nanowires originate. Interestingly, these nanowires are bent, posing challenges for the synthesis of interconnecting nanowire networks due to merging failure. We attribute this bending to the non-homogeneous incorporation of arsenic impurities in the InSb nanowires and the interposed lattice-mismatch. By tuning the growth parameters, we can mitigate the bending, yielding large and single crystalline InSb nanowire networks and nanoflakes. The improved size and crystal quality of these nanostructures broaden the potential of this technique for fabricating advanced quantum devices.
Collapse
Affiliation(s)
- Marco Rossi
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Teun A J van Schijndel
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Pim Lueb
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Ghada Badawy
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Jason Jung
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Wouter H J Peeters
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| | - Sebastian Kölling
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Québec, Canada
| | - Marcel A Verheijen
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
- Eurofins Materials Science Netherlands B.V., High Tech Campus 11, 5656 AE, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Applied Physics and Science Education Department, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
| |
Collapse
|
2
|
Sestoft JE, Marnauza M, Olsteins D, Kanne T, Schlosser RD, Chen IJ, Grove-Rasmussen K, Nygård J. Shadowed versus Etched Superconductor-Semiconductor Junctions in Al/InAs Nanowires. NANO LETTERS 2024; 24:8394-8401. [PMID: 38865258 PMCID: PMC11249013 DOI: 10.1021/acs.nanolett.4c02055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Hybrid semiconductor-superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.
Collapse
Affiliation(s)
- Joachim E Sestoft
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rasmus D Schlosser
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - I-Ju Chen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| |
Collapse
|
3
|
Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
Collapse
Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| |
Collapse
|
4
|
Chen AH, Dempsey C, Pendharkar M, Sharma A, Zhang B, Tan S, Bellon L, Frolov SM, Palmstrøm CJ, Bellet-Amalric E, Hocevar M. Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates. NANOTECHNOLOGY 2023; 35:075702. [PMID: 37890472 DOI: 10.1088/1361-6528/ad079e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 10/26/2023] [Indexed: 10/29/2023]
Abstract
Metal deposition with cryogenic cooling is a common technique in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a significant challenge arises when these films return to room temperature, as they tend to undergo dewetting. This issue can be mitigated by capping the films with an amorphous layer. In this study, we investigate the influence of differentin situfabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we consistently observe that the films remain smooth upon returning to room temperature and exhibit epitaxy on InSb in the cubic Sn (α-Sn) phase. Notably, we identify a correlation between alumina capping using an electron beam evaporator and an increased presence of tetragonal Sn (β-Sn) grains. This suggests that heating from the alumina source may induce a partial phase transition in the Sn layer. The existence of theβ-Sn phase induces superconducting behavior of the films by percolation effect. This study highlights the potential for tailoring the structural properties of cryogenic Sn thin films throughin situcapping. This development opens avenues for precise control in the production of superconducting Sn films, facilitating their integration into quantum computing platforms.
Collapse
Affiliation(s)
- An-Hsi Chen
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, F-38000 Grenoble, France
| | - Connor Dempsey
- Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Mihir Pendharkar
- Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Amritesh Sharma
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - Bomin Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - Susheng Tan
- Department of Electrical and Computer Engineering, and Petersen Institute of NanoScience and Engineering, University of Pittsburgh, PA 15260, United States of America
| | - Ludovic Bellon
- Univ Lyon, ENS de Lyon, CNRS, Laboratoire de Physique, F-69342 Lyon, France
| | - Sergey M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America
| | - Christopher J Palmstrøm
- Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Edith Bellet-Amalric
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, F-38000 Grenoble, France
| | - Moïra Hocevar
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, F-38000 Grenoble, France
| |
Collapse
|
5
|
Shtrikman H, Song MS, Załuska-Kotur MA, Buczko R, Wang X, Kalisky B, Kacman P, Houben L, Beidenkopf H. Intrinsic Magnetic (EuIn)As Nanowire Shells with a Unique Crystal Structure. NANO LETTERS 2022; 22:8925-8931. [PMID: 36343206 PMCID: PMC9706668 DOI: 10.1021/acs.nanolett.2c03012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2022] [Revised: 10/27/2022] [Indexed: 06/16/2023]
Abstract
In the pursuit of magneto-electronic systems nonstoichiometric magnetic elements commonly introduce disorder and enhance magnetic scattering. We demonstrate the growth of (EuIn)As shells, with a unique crystal structure comprised of a dense net of Eu inversion planes, over InAs and InAs1-xSbx core nanowires. This is imaged with atomic and elemental resolution which reveal a prismatic configuration of the Eu planes. The results are supported by molecular dynamics simulations. Local magnetic and susceptibility mappings show magnetic response in all nanowires, while a subset bearing a DC signal points to ferromagnetic order. These provide a mechanism for enhancing Zeeman responses, operational at zero applied magnetic field. Such properties suggest that the obtained structures can serve as a preferred platform for time-reversal symmetry broken one-dimensional states including intrinsic topological superconductivity.
Collapse
Affiliation(s)
- Hadas Shtrikman
- Department
of Condensed Matter Physics, Weizmann Institute
of Science, Rehovot 7610001, Israel
| | - Man Suk Song
- Department
of Condensed Matter Physics, Weizmann Institute
of Science, Rehovot 7610001, Israel
| | | | - Ryszard Buczko
- Institute
of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, Warsaw PL-02-668, Poland
| | - Xi Wang
- Department
of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Beena Kalisky
- Department
of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel
| | - Perla Kacman
- Institute
of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, Warsaw PL-02-668, Poland
| | - Lothar Houben
- Department
of Chemical Research Support, Weizmann Institute
of Science, Rehovot 761001, Israel
| | - Haim Beidenkopf
- Department
of Condensed Matter Physics, Weizmann Institute
of Science, Rehovot 7610001, Israel
| |
Collapse
|
6
|
Ritter M, Schmid H, Sousa M, Staudinger P, Haxell DZ, Mueed MA, Madon B, Pushp A, Riel H, Nichele F. Semiconductor Epitaxy in Superconducting Templates. NANO LETTERS 2021; 21:9922-9929. [PMID: 34788993 PMCID: PMC8662718 DOI: 10.1021/acs.nanolett.1c03133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Revised: 11/10/2021] [Indexed: 06/13/2023]
Abstract
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
Collapse
Affiliation(s)
- Markus
F. Ritter
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | | | - Daniel Z. Haxell
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - M. A. Mueed
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Benjamin Madon
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Aakash Pushp
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Heike Riel
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Fabrizio Nichele
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| |
Collapse
|
7
|
Bjergfelt MS, Carrad DJ, Kanne T, Johnson E, Fiordaliso EM, Jespersen TS, Nygård J. Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires. NANO LETTERS 2021; 21:9875-9881. [PMID: 34807620 DOI: 10.1021/acs.nanolett.1c02487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
Collapse
Affiliation(s)
- Martin Saurbrey Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- DTU Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | | | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| |
Collapse
|
8
|
Heedt S, Quintero-Pérez M, Borsoi F, Fursina A, van Loo N, Mazur GP, Nowak MP, Ammerlaan M, Li K, Korneychuk S, Shen J, van de Poll MAY, Badawy G, Gazibegovic S, de Jong N, Aseev P, van Hoogdalem K, Bakkers EPAM, Kouwenhoven LP. Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices. Nat Commun 2021; 12:4914. [PMID: 34389705 PMCID: PMC8363628 DOI: 10.1038/s41467-021-25100-w] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2020] [Accepted: 07/19/2021] [Indexed: 11/09/2022] Open
Abstract
The realization of hybrid superconductor-semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.
Collapse
Affiliation(s)
- Sebastian Heedt
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. .,Microsoft Quantum Lab Delft, Delft, The Netherlands.
| | | | - Francesco Borsoi
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | | | - Nick van Loo
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Grzegorz P Mazur
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Michał P Nowak
- AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, Krakow, Poland
| | - Mark Ammerlaan
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Kongyi Li
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Jie Shen
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - May An Y van de Poll
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Sasa Gazibegovic
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Nick de Jong
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.,Netherlands Organisation for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Pavel Aseev
- Microsoft Quantum Lab Delft, Delft, The Netherlands
| | | | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.,Microsoft Quantum Lab Delft, Delft, The Netherlands
| |
Collapse
|
9
|
Kanne T, Marnauza M, Olsteins D, Carrad DJ, Sestoft JE, de Bruijckere J, Zeng L, Johnson E, Olsson E, Grove-Rasmussen K, Nygård J. Epitaxial Pb on InAs nanowires for quantum devices. NATURE NANOTECHNOLOGY 2021; 16:776-781. [PMID: 33972757 DOI: 10.1038/s41565-021-00900-9] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 03/11/2021] [Indexed: 05/21/2023]
Abstract
Semiconductor-superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. One challenge is the generation of favourable conditions for heterostructural formation between materials with the desired properties. Here we harness an increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single-crystal, atomically flat Pb films with no axial grain boundaries. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, and therefore they offer a parameter space more than twice as large as those of alternative semiconductor-superconductor hybrids. Additionally, InAs/Pb island devices exhibit magnetic field-driven transitions from a Cooper pair to single-electron charging, a prerequisite for use in topological quantum computation. Semiconductor-Pb hybrids potentially enable access to entirely new regimes for a number of different quantum systems.
Collapse
Affiliation(s)
- Thomas Kanne
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joeri de Bruijckere
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Lunjie Zeng
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Eva Olsson
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
| |
Collapse
|
10
|
Pendharkar M, Zhang B, Wu H, Zarassi A, Zhang P, Dempsey CP, Lee JS, Harrington SD, Badawy G, Gazibegovic S, Op Het Veld RLM, Rossi M, Jung J, Chen AH, Verheijen MA, Hocevar M, Bakkers EPAM, Palmstrøm CJ, Frolov SM. Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells. Science 2021; 372:508-511. [PMID: 33858990 DOI: 10.1126/science.aba5211] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2019] [Accepted: 03/13/2021] [Indexed: 11/02/2022]
Abstract
Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are semiconductor-superconductor heterostructures that are expected to form the basis of topological quantum computing. We grew semiconductor indium antimonide nanowires that were coated with shells of tin of uniform thickness. No interdiffusion was observed at the interface between Sn and InSb. Tunnel junctions were prepared by in situ shadowing. Despite the lack of lattice matching between Sn and InSb, a 15-nanometer-thick shell of tin was found to induce a hard superconducting gap, with superconductivity persisting in magnetic field up to 4 teslas. A small island of Sn-InSb exhibits the two-electron charging effect. These findings suggest a less restrictive approach to fabricating superconducting and topological quantum circuits.
Collapse
Affiliation(s)
- M Pendharkar
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - B Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - H Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - A Zarassi
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - P Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
| | - C P Dempsey
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - J S Lee
- California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA
| | - S D Harrington
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - G Badawy
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - S Gazibegovic
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | | | - M Rossi
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - J Jung
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - A-H Chen
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - M A Verheijen
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - M Hocevar
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - E P A M Bakkers
- Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - C J Palmstrøm
- Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.,California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA.,Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - S M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA.
| |
Collapse
|
11
|
Cockell CS, Santomartino R, Finster K, Waajen AC, Nicholson N, Loudon CM, Eades LJ, Moeller R, Rettberg P, Fuchs FM, Van Houdt R, Leys N, Coninx I, Hatton J, Parmitano L, Krause J, Koehler A, Caplin N, Zuijderduijn L, Mariani A, Pellari S, Carubia F, Luciani G, Balsamo M, Zolesi V, Ochoa J, Sen P, Watt JAJ, Doswald-Winkler J, Herová M, Rattenbacher B, Wadsworth J, Everroad RC, Demets R. Microbially-Enhanced Vanadium Mining and Bioremediation Under Micro- and Mars Gravity on the International Space Station. Front Microbiol 2021; 12:641387. [PMID: 33868198 PMCID: PMC8047202 DOI: 10.3389/fmicb.2021.641387] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Accepted: 03/04/2021] [Indexed: 11/30/2022] Open
Abstract
As humans explore and settle in space, they will need to mine elements to support industries such as manufacturing and construction. In preparation for the establishment of permanent human settlements across the Solar System, we conducted the ESA BioRock experiment on board the International Space Station to investigate whether biological mining could be accomplished under extraterrestrial gravity conditions. We tested the hypothesis that the gravity (g) level influenced the efficacy with which biomining could be achieved from basalt, an abundant material on the Moon and Mars, by quantifying bioleaching by three different microorganisms under microgravity, simulated Mars and Earth gravitational conditions. One element of interest in mining is vanadium (V), which is added to steel to fabricate high strength, corrosion-resistant structural materials for buildings, transportation, tools and other applications. The results showed that Sphingomonas desiccabilis and Bacillus subtilis enhanced the leaching of vanadium under the three gravity conditions compared to sterile controls by 184.92 to 283.22%, respectively. Gravity did not have a significant effect on mean leaching, thus showing the potential for biomining on Solar System objects with diverse gravitational conditions. Our results demonstrate the potential to use microorganisms to conduct elemental mining and other bioindustrial processes in space locations with non-1 × g gravity. These same principles apply to extraterrestrial bioremediation and elemental recycling beyond Earth.
Collapse
Affiliation(s)
- Charles S Cockell
- UK Centre for Astrobiology, School of Physics and Astronomy, University of Edinburgh, Edinburgh, United Kingdom
| | - Rosa Santomartino
- UK Centre for Astrobiology, School of Physics and Astronomy, University of Edinburgh, Edinburgh, United Kingdom
| | - Kai Finster
- Department of Biology - Microbiology, Aarhus University, Aarhus, Denmark
| | - Annemiek C Waajen
- UK Centre for Astrobiology, School of Physics and Astronomy, University of Edinburgh, Edinburgh, United Kingdom
| | - Natasha Nicholson
- UK Centre for Astrobiology, School of Physics and Astronomy, University of Edinburgh, Edinburgh, United Kingdom
| | - Claire-Marie Loudon
- UK Centre for Astrobiology, School of Physics and Astronomy, University of Edinburgh, Edinburgh, United Kingdom
| | - Lorna J Eades
- School of Chemistry, University of Edinburgh, Edinburgh, United Kingdom
| | - Ralf Moeller
- Radiation Biology Department, German Aerospace Center (DLR), Institute of Aerospace Medicine, Köln, Germany
| | - Petra Rettberg
- Radiation Biology Department, German Aerospace Center (DLR), Institute of Aerospace Medicine, Köln, Germany
| | - Felix M Fuchs
- Radiation Biology Department, German Aerospace Center (DLR), Institute of Aerospace Medicine, Köln, Germany.,Institute of Electrical Engineering and Plasma Technology, Faculty of Electrical Engineering and Information Sciences, Ruhr University Bochum, Bochum, Germany
| | - Rob Van Houdt
- Microbiology Unit, Belgian Nuclear Research Centre, SCK CEN, Mol, Belgium
| | - Natalie Leys
- Microbiology Unit, Belgian Nuclear Research Centre, SCK CEN, Mol, Belgium
| | - Ilse Coninx
- Microbiology Unit, Belgian Nuclear Research Centre, SCK CEN, Mol, Belgium
| | | | | | | | | | | | | | | | | | | | | | | | | | - Jon Ochoa
- ESTEC, Noordwijk, Netherlands.,Space Application Services NV/SA, Noordwijk, Netherlands
| | - Pia Sen
- Earth and Environmental Sciences Department, Rutgers University, Newark, NJ, United States
| | - James A J Watt
- School of Geosciences, University of Edinburgh, Edinburgh, United Kingdom
| | - Jeannine Doswald-Winkler
- BIOTESC, Hochschule Luzern Technik & Architektur, Lucerne School of Engineering and Architecture, Hergiswil, Switzerland
| | - Magdalena Herová
- BIOTESC, Hochschule Luzern Technik & Architektur, Lucerne School of Engineering and Architecture, Hergiswil, Switzerland
| | - Bernd Rattenbacher
- BIOTESC, Hochschule Luzern Technik & Architektur, Lucerne School of Engineering and Architecture, Hergiswil, Switzerland
| | - Jennifer Wadsworth
- Exobiology Branch, NASA Ames Research Center, Moffett Field, CA, United States
| | - R Craig Everroad
- Exobiology Branch, NASA Ames Research Center, Moffett Field, CA, United States
| | | |
Collapse
|
12
|
Perla P, Fonseka HA, Zellekens P, Deacon R, Han Y, Kölzer J, Mörstedt T, Bennemann B, Espiari A, Ishibashi K, Grützmacher D, Sanchez AM, Lepsa MI, Schäpers T. Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation. NANOSCALE ADVANCES 2021; 3:1413-1421. [PMID: 36132855 PMCID: PMC9418346 DOI: 10.1039/d0na00999g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 01/17/2021] [Indexed: 06/14/2023]
Abstract
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in situ by a special shadow evaporation scheme for the superconductor electrode. Compared to other metallic superconductors such as Al, Nb has the advantage of a larger superconducting gap which allows operation at higher temperatures and magnetic fields. Our junctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowires grown selectively on two adjacent tilted Si (111) facets and crossing each other at a small distance. The upper wire relative to the deposition source acts as a shadow mask determining the gap of the superconducting electrodes on the lower nanowire. Electron microscopy measurements show that the fully in situ fabrication method gives a clean InAs/Nb interface. A clear Josephson supercurrent is observed in the current-voltage characteristics, which can be controlled by a bottom gate. The large excess current indicates a high junction transparency. Under microwave radiation, pronounced integer Shapiro steps are observed suggesting a sinusoidal current-phase relation. Owing to the large critical field of Nb, the Josephson supercurrent can be maintained to magnetic fields exceeding 1 T. Our results show that in situ prepared Nb/InAs nanowire contacts are very interesting candidates for superconducting quantum circuits requiring large magnetic fields.
Collapse
Affiliation(s)
- Pujitha Perla
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - H Aruni Fonseka
- Department of Physics, University of Warwick Coventry CV4 7AL UK
| | - Patrick Zellekens
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Russell Deacon
- RIKEN Center for Emergent Matter Science and Advanced Device Laboratory 351-0198 Saitama Japan
| | - Yisong Han
- Department of Physics, University of Warwick Coventry CV4 7AL UK
| | - Jonas Kölzer
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Timm Mörstedt
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Benjamin Bennemann
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Abbas Espiari
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| | - Koji Ishibashi
- RIKEN Center for Emergent Matter Science and Advanced Device Laboratory 351-0198 Saitama Japan
| | - Detlev Grützmacher
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
- Peter Grünberg Institut (PGI-10), Forschungszentrum Jülich 52425 Jülich Germany
| | - Ana M Sanchez
- Department of Physics, University of Warwick Coventry CV4 7AL UK
| | - Mihail Ion Lepsa
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
- Peter Grünberg Institut (PGI-10), Forschungszentrum Jülich 52425 Jülich Germany
| | - Thomas Schäpers
- Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich 52425 Jülich Germany +49 2461 61 2940 +49 2461 61 2668
- JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, RWTH Aachen University Germany
| |
Collapse
|
13
|
Carrad DJ, Bjergfelt M, Kanne T, Aagesen M, Krizek F, Fiordaliso EM, Johnson E, Nygård J, Jespersen TS. Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908411. [PMID: 32337791 DOI: 10.1002/adma.201908411] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2019] [Revised: 02/27/2020] [Accepted: 03/23/2020] [Indexed: 06/11/2023]
Abstract
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.
Collapse
Affiliation(s)
- Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Martin Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Martin Aagesen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Danish Defence Research Center, Ballerup, 2750, Denmark
| | - Filip Krizek
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Spintronics, Institute of Physics, Czech Academy of Sciences, Praha 6, Prague, 162 00, Czech Republic
| | | | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Mechanical Engineering, Technical University of Denmark, Kgs. Lyngby, 2800, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| |
Collapse
|
14
|
Wang H, Liang X, Wang J, Jiao S, Xue D. Multifunctional inorganic nanomaterials for energy applications. NANOSCALE 2020; 12:14-42. [PMID: 31808494 DOI: 10.1039/c9nr07008g] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Our society has been facing more and more serious challenges towards achieving highly efficient utilization of energy. In the field of energy applications, multifunctional nanomaterials have been attracting increasing attention. Various energy applications, such as energy generation, conversion, storage, saving and transmission, are strongly dependent upon the electrical, thermal, mechanical, optical and catalytic functions of materials. In the nanoscale range, thermoelectric, piezoelectric, triboelectric, photovoltaic, catalytic and electrochromic materials have made major contributions to various energy applications. Inorganic nanomaterials' unique properties, such as excellent electrical and thermal conductivity, large surface area and chemical stability, make them highly competitive in energy applications. In this review, the latest research and development of multifunctional inorganic nanomaterials in energy applications were summarized from the perspective of different energy applications. Furthermore, we also illustrated the unique functions of inorganic nanomaterials to improve their performances and the combination of the functions of nanomaterials into a device. However, challenges may be traced back to the limitations set by scaling the relations between multifunctional inorganic nanomaterials and energy devices.
Collapse
Affiliation(s)
- Huilin Wang
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China. and University of Science and Technology of China, Hefei 230026, China
| | - Xitong Liang
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China. and University of Science and Technology of China, Hefei 230026, China
| | - Jiutian Wang
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China. and University of Science and Technology of China, Hefei 230026, China
| | - Shengjian Jiao
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China. and University of Science and Technology of China, Hefei 230026, China
| | - Dongfeng Xue
- State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China. and University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|