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Wang S, Yu Y, Hao J, Liang K, Xiang B, Zhu J, Lin Y, Pan Y, Gu G, Watanabe K, Taniguchi T, Qi Y, Zhang Y, Wang Y. Oscillating paramagnetic Meissner effect and Berezinskii-Kosterlitz-Thouless transition in underdoped Bi 2Sr 2CaCu 2O 8+δ. Natl Sci Rev 2024; 11:nwad249. [PMID: 38577674 PMCID: PMC10989300 DOI: 10.1093/nsr/nwad249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 07/01/2023] [Accepted: 08/31/2023] [Indexed: 04/06/2024] Open
Abstract
Superconducting phase transitions in two dimensions lie beyond the description of the Ginzburg-Landau symmetry-breaking paradigm for three-dimensional superconductors. They are Berezinskii-Kosterlitz-Thouless (BKT) transitions of paired-electron condensate driven by the unbinding of topological excitations, i.e. vortices. The recently discovered monolayers of layered high-transition-temperature ([Formula: see text]) cuprate superconductor Bi2Sr2CaCu2O8+δ (Bi2212) meant that this 2D superconductor promised to be ideal for the study of unconventional superconductivity. But inhomogeneity posed challenges for distinguishing BKT physics from charge correlations in this material. Here, we utilize the phase sensitivity of scanning superconducting quantum interference device microscopy susceptometry to image the local magnetic response of underdoped Bi2212 from the monolayer to the bulk throughout its phase transition. The monolayer segregates into domains with independent phases at elevated temperatures below [Formula: see text]. Within a single domain, we find that the susceptibility oscillates with flux between diamagnetism and paramagnetism in a Fraunhofer-like pattern up to [Formula: see text]. The finite modulation period, as well as the broadening of the peaks when approaching [Formula: see text] from below, suggests well-defined vortices that are increasingly screened by the dissociation of vortex-antivortex plasma through a BKT transition. In the multilayers, the susceptibility oscillation differs in a small temperature regime below [Formula: see text], consistent with a dimensional crossover led by interlayer coupling. Serving as strong evidence for BKT transition in the bulk, we observe a sharp jump in phase stiffness and paramagnetism at small fields just below [Formula: see text]. These results unify the superconducting phase transitions from the monolayer to the bulk underdoped Bi2212, and can be collectively referred to as the BKT transition with interlayer coupling.
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Affiliation(s)
- Shiyuan Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yijun Yu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jinxiang Hao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Keyi Liang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Bingke Xiang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jinjiang Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yishi Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yinping Pan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Yang Qi
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
| | - Yihua Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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Wang Y, Chen L, Pan Y, Zhang D, Yu S, Wu G, Liu X, Wu L, Shi W, Zhang G, Zhang L, Peng W, Ren J, Wang Z. Geometric Scaling of the Current-Phase Relation of Niobium Nanobridge Junctions. ACS NANO 2023; 17:15466-15473. [PMID: 37573571 DOI: 10.1021/acsnano.3c01301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2023]
Abstract
The nanobridge junction (NBJ) is a type of Josephson junction that is advantageous for the miniaturization of superconducting circuits. However, the current-phase relation (CPR) of the NBJ usually deviates from a sinusoidal function, which has been explained by a simplified model with correlation only to its effective length. Here, we investigated both measured and calculated CPRs of niobium NBJs of a cuboidal shape with a three-dimensional bank structure. From a sine-wave to a sawtooth-like form, we showed that deviated CPRs of NBJs can be described quantitatively by its skewness Δθ. Furthermore, the measured dependence of Δθ on the critical current I0 from 108 NBJs turned out to be consistent with the calculated dependence derived from the change in geometric dimensions. This suggested that the CPRs of NBJs can be tuned by their geometric dimensions. In addition, the calculated scaling behavior of Δθ versus I0 in 3D space was provided for the future design of superconducting circuits of a high integration level by using niobium NBJs.
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Affiliation(s)
- Yue Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lei Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yinping Pan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Denghui Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shujie Yu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangting Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaoyu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Ling Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Weifeng Shi
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Guofeng Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Lu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jie Ren
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, People's Republic of China
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Frustrated ferromagnetic transition in AB-stacked honeycomb bilayer. Sci Bull (Beijing) 2022; 67:2557-2563. [PMID: 36604034 DOI: 10.1016/j.scib.2022.12.009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 11/29/2022] [Accepted: 12/04/2022] [Indexed: 12/12/2022]
Abstract
In two-dimensional (2D) ferromagnets, anisotropy is essential for the magnetic ordering as dictated by the Mermin-Wagner theorem. But when competing anisotropies are present, the phase transition becomes nontrivial. Here, utilizing highly sensitive susceptometry of scanning superconducting quantum interference device microscopy, we probe the spin correlations of ABC-stacked CrBr3 under zero magnetic field. We identify a plateau feature in susceptibility above the critical temperature (TC) in thick samples. It signifies a crossover regime induced by the competition between easy-plane intralayer exchange anisotropy versus uniaxial interlayer anisotropy. The evolution of the critical behavior from the bulk to 2D shows that the competition between the anisotropies is magnified in the reduced dimension. It leads to a strongly frustrated ferromagnetic transition in the bilayer with fluctuation on the order of TC, which is distinct from both the monolayer and the bulk. Our observation demonstrates unconventional 2D critical behavior on a honeycomb lattice.
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Feng Y, Zhu J, Lin W, Lian Z, Wang Y, Li H, Yao H, He Q, Pan Y, Wu Y, Zhang J, Wang Y, Zhou X, Shen J, Wang Y. Helical Luttinger Liquid on the Edge of a Two-Dimensional Topological Antiferromagnet. NANO LETTERS 2022; 22:7606-7614. [PMID: 36123350 DOI: 10.1021/acs.nanolett.2c02701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A boundary helical Luttinger liquid (HLL) with broken bulk time-reversal symmetry belongs to a unique topological class that may occur in antiferromagnets (AFM). Here, we search for signatures of HLL on the edge of a recently discovered topological AFM, MnBi2Te4 even-layer. Using a scanning superconducting quantum interference device, we directly image helical edge current in the AFM ground state appearing at its charge neutral point. Such a helical edge state accompanies an insulating bulk which is topologically distinct from the ferromagnetic Chern insulator phase, as revealed in a magnetic field driven quantum phase transition. The edge conductance of the AFM order follows a power law as a function of temperature and source-drain bias which serves as strong evidence for HLL. Such HLL scaling is robust at finite fields below the quantum critical point. The observed HLL in a layered AFM semiconductor represents a highly tunable topological matter compatible with future spintronics and quantum computation.
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Affiliation(s)
- Yang Feng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
| | - Jinjiang Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
| | - Weiyan Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai200433, People's Republic of China
| | - Zichen Lian
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing100084, People's Republic of China
| | - Yongchao Wang
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing100084, People's Republic of China
| | - Hao Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China
- Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing100084, People's Republic of China
| | - Hongxu Yao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
| | - Qiushi He
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
| | - Yinping Pan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
| | - Yang Wu
- Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing100084, People's Republic of China
- Department of Mechanical Engineering, Tsinghua University, Beijing100084, People's Republic of China
| | - Jinsong Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing100084, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing100084, People's Republic of China
| | - Yayu Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing100084, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing100084, People's Republic of China
| | - Xiaodong Zhou
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai200232, People's Republic of China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai200232, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing210093, People's Republic of China
- Shanghai Research Center for Quantum Sciences, Shanghai201315, People's Republic of China
| | - Yihua Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai200433, People's Republic of China
- Shanghai Research Center for Quantum Sciences, Shanghai201315, People's Republic of China
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Jiang D, Pan Y, Wang S, Lin Y, Holland CM, Kirtley JR, Chen X, Zhao J, Chen L, Yin S, Wang Y. Observation of robust edge superconductivity in Fe(Se,Te) under strong magnetic perturbation. Sci Bull (Beijing) 2021; 66:425-432. [PMID: 36654179 DOI: 10.1016/j.scib.2020.10.006] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2020] [Revised: 09/04/2020] [Accepted: 09/29/2020] [Indexed: 01/20/2023]
Abstract
The iron-chalcogenide high temperature superconductor Fe(Se,Te) (FST) has been reported to exhibit complex magnetic ordering and nontrivial band topology which may lead to novel superconducting phenomena. However, the recent studies have so far been largely concentrated on its band and spin structures while its mesoscopic electronic and magnetic response, crucial for future device applications, has not been explored experimentally. Here, we used scanning superconducting quantum interference device microscopy for its sensitivity to both local diamagnetic susceptibility and current distribution in order to image the superfluid density and supercurrent in FST. We found that in FST with 10% interstitial Fe, whose magnetic structure was heavily disrupted, bulk superconductivity was significantly suppressed whereas edge still preserved strong superconducting diamagnetism. The edge dominantly carried supercurrent despite of a very long magnetic penetration depth. The temperature dependences of the superfluid density and supercurrent distribution were distinctively different between the edge and the bulk. Our Heisenberg modeling showed that magnetic dopants stabilize anti-ferromagnetic spin correlation along the edge, which may contribute towards its robust superconductivity. Our observations hold implication for FST as potential platforms for topological quantum computation and superconducting spintronics.
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Affiliation(s)
- Da Jiang
- Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
| | - Yinping Pan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Shiyuan Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yishi Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Connor M Holland
- Department of Physics, Stanford University, Stanford, CA 94305, USA
| | - John R Kirtley
- Department of Physics, Stanford University, Stanford, CA 94305, USA
| | - Xianhui Chen
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jun Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lei Chen
- Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China
| | - Shaoyu Yin
- Institute for Theoretical Physics and Cosmology, Zhejiang University of Technology, Hangzhou 310023, China; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
| | - Yihua Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China.
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Murzin D, Mapps DJ, Levada K, Belyaev V, Omelyanchik A, Panina L, Rodionova V. Ultrasensitive Magnetic Field Sensors for Biomedical Applications. SENSORS (BASEL, SWITZERLAND) 2020; 20:E1569. [PMID: 32168981 PMCID: PMC7146409 DOI: 10.3390/s20061569] [Citation(s) in RCA: 61] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2019] [Revised: 03/02/2020] [Accepted: 03/06/2020] [Indexed: 12/27/2022]
Abstract
The development of magnetic field sensors for biomedical applications primarily focuses on equivalent magnetic noise reduction or overall design improvement in order to make them smaller and cheaper while keeping the required values of a limit of detection. One of the cutting-edge topics today is the use of magnetic field sensors for applications such as magnetocardiography, magnetotomography, magnetomyography, magnetoneurography, or their application in point-of-care devices. This introductory review focuses on modern magnetic field sensors suitable for biomedicine applications from a physical point of view and provides an overview of recent studies in this field. Types of magnetic field sensors include direct current superconducting quantum interference devices, search coil, fluxgate, magnetoelectric, giant magneto-impedance, anisotropic/giant/tunneling magnetoresistance, optically pumped, cavity optomechanical, Hall effect, magnetoelastic, spin wave interferometry, and those based on the behavior of nitrogen-vacancy centers in the atomic lattice of diamond.
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Affiliation(s)
- Dmitry Murzin
- Institute of Physics, Mathematics and Information Technology, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia; (K.L.); (V.B.); (A.O.); (L.P.); (V.R.)
| | - Desmond J. Mapps
- Faculty of Science and Engineering, University of Plymouth, Plymouth PL4 8AA, UK;
| | - Kateryna Levada
- Institute of Physics, Mathematics and Information Technology, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia; (K.L.); (V.B.); (A.O.); (L.P.); (V.R.)
| | - Victor Belyaev
- Institute of Physics, Mathematics and Information Technology, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia; (K.L.); (V.B.); (A.O.); (L.P.); (V.R.)
| | - Alexander Omelyanchik
- Institute of Physics, Mathematics and Information Technology, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia; (K.L.); (V.B.); (A.O.); (L.P.); (V.R.)
| | - Larissa Panina
- Institute of Physics, Mathematics and Information Technology, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia; (K.L.); (V.B.); (A.O.); (L.P.); (V.R.)
- National University of Science and Technology, MISiS, 119049 Moscow, Russia
| | - Valeria Rodionova
- Institute of Physics, Mathematics and Information Technology, Immanuel Kant Baltic Federal University, 236041 Kaliningrad, Russia; (K.L.); (V.B.); (A.O.); (L.P.); (V.R.)
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