Graphene-carbon nitride interface-geometry effects on thermal rectification: a molecular dynamics simulation

Thermal rectification in novel two-dimensional hybrid graphene/BCN sheets: A molecular dynamics simulation

The graphene-like monolayer of carbon, boron and nitrogen that maintains the native hexagonal atomic lattice (BCN), is a novel semiconductor with special thermal properties. Herein, with the aid of a non-equilibrium molecular dynamics approach (NEMD), we study phonon thermal rectification in a hybrid system of pure graphene and BCN (G-BCN) in various configurations under a series of positive and negative temperature gradients. We begin by investigating the relation of thermal rectification to sample's mean temperature, T, and the imposed temperature difference, ΔT, between the two heat baths at its ends. We then move to explore the effect of varying strain levels of our sample on thermal rectification, followed by Kapitza resistance calculations at the G-BCN interface, which shed light on the interface effects on thermal rectification. Our simulation results reveal a BCN-configuration-dependent behavior of thermal rectification. Finally, the underlying mechanism leading to a preferred direction for phonons is studied using phonon density of states (DOS) on both sides of the G-BCN interface.

Thermal rectification in ultra-narrow hydrogen functionalized graphene: a non-equilibrium molecular dynamics study

In this study, the non-equilibrium molecular dynamics simulation (NEMD) has been used to evaluate the thermal properties, especially the rectification of ultra-narrow edge-functionalized graphene with hydrogen atoms. The system's small width equals 4.91 Å (equivalent to two hexagonal rings). The dependence of the thermal rectification on the mean temperature, hydrogen concentration, and temperature difference between the two baths was investigated. Results reveal that the thermal rectification increases to 100% at 550 K by increasing the mean temperature. Also, it is disclosed that hydrogen concentration plays a vibrant role in thermal rectification. As a result of maximum phonon scattering at the interface, a thorough rectification is obtained in a half-fully hydrogenated system. As well, the effects of temperature difference of baths ΔT on thermal rectification has been calculated. As a result, the thermal rectification decreases even though the current heat increases with ΔT. Finally, the thermal resistance at the interface using a mismatching factor between the two-phonon density of states (DOS) on both sides of the interface has been explained.

Thermal rectification in polytelescopic Ge nanowires

Herein we served non-equilibrium molecular dynamics (NEMD) approach to simulate thermal rectification in the mono- and polytelescopic Ge nanowires (GeNWs). We considered mono-telescopic structures with different Fat-Thin configurations (15-10 nm-nm or Type (I); 15-5 nm-nm or Type (II); and 10-5 or Type (III) nm-nm) as generic models. We simulated the variation of thermal conductivity against interfacial cross-sectional temperature as well as the direction of heat transfer, where a higher thermal conductivity correlating to thicker nanowires, and a more significant drop (or discontinuity) in the average interface temperature in the positive (or negative) direction were detected. Noticeably, interfacial thermal resistance followed the order of Type (II) (48 K/μW, maximal) ˃ Type (III) ˃ Type (I) (5 K/μW, minimal). In the second stage, a series of polytelescopic nanostructures of GeNWs were born with consecutive cross-sectional interfaces. Surprisingly, larger interfacial cross-sectional areas equivalent to smaller diameter changes along the GeNWs were responsible for higher temperature rectification. This led to a very limited thermal conductivity loss or a very high unidirectional heat transfer along the polytelescopic structures - the key for manufacturing next generation high-performance thermal diodes.

Heat transfer through hydrogenated graphene superlattice nanoribbons: a computational study

Optimization of thermal conductivity of nanomaterials enables the fabrication of tailor-made nanodevices for thermoelectric applications. Superlattice nanostructures are correspondingly introduced to minimize the thermal conductivity of nanomaterials. Herein we computationally estimate the effect of total length and superlattice period ([Formula: see text]) on the thermal conductivity of graphene/graphane superlattice nanoribbons using molecular dynamics simulation. The intrinsic thermal conductivity ([Formula: see text]) is demonstrated to be dependent on [Formula: see text]. The [Formula: see text] of the superlattice, nanoribbons decreased by approximately 96% and 88% compared to that of pristine graphene and graphane, respectively. By modifying the overall length of the developed structure, we identified the ballistic-diffusive transition regime at 120 nm. Further study of the superlattice periods yielded a minimal thermal conductivity value of 144 W m^-1 k^-1 at [Formula: see text] = 3.4 nm. This superlattice characteristic is connected to the phonon coherent length, specifically, the length of the turning point at which the wave-like behavior of phonons starts to dominate the particle-like behavior. Our results highlight a roadmap for thermal conductivity value control via appropriate adjustments of the superlattice period.

Near-Interface Defects in Graphene/H-BN In-Plane Heterostructures: Insights into the Interfacial Thermal Transport

Based on nonequilibrium molecular dynamics (NEMD) and nonequilibrium Green's function simulations, the interfacial thermal conductance (ITC) of graphene/h-BN in-plane heterostructures with near-interface defects (monovacancy defects, 585 and f5f7 double-vacancy defects) is studied. Compared to pristine graphene/h-BN, all near-interface defects reduce the ITC of graphene/h-BN. However, differences in defective structures and the wrinkles induced by the defects cause significant discrepancies in heat transfer for defective graphene/h-BN. The stronger phonon scattering and phonon localization caused by the wider cross-section in defects and the larger wrinkles result in the double-vacancy defects having stronger energy hindrance effects than the monovacancy defects. In addition, the approximate cross-sections and wrinkles induced by the 585 and f5f7 double-vacancy defects provide approximate heat hindrance capability. The phonon transmission and vibrational density of states (VDOS) further confirm the above results. The double-vacancy defects in the near-interface region have lower low-frequency phonon transmission and VDOS values than the monovacancy defects, while the 585 and f5f7 double-vacancy defects have similar low-frequency phonon transmission and VDOS values at the near-interface region. This study provides physical insight into the thermal transport mechanisms in graphene/h-BN in-plane heterostructures with near-interface defects and provides design guidelines for related devices.

An insight into thermal properties of BC3-graphene hetero-nanosheets: a molecular dynamics study

Simulation of thermal properties of graphene hetero-nanosheets is a key step in understanding their performance in nano-electronics where thermal loads and shocks are highly likely. Herein we combine graphene and boron-carbide nanosheets (BC3N) heterogeneous structures to obtain BC3N-graphene hetero-nanosheet (BC3GrHs) as a model semiconductor with tunable properties. Poor thermal properties of such heterostructures would curb their long-term practice. BC3GrHs may be imperfect with grain boundaries comprising non-hexagonal rings, heptagons, and pentagons as topological defects. Therefore, a realistic picture of the thermal properties of BC3GrHs necessitates consideration of grain boundaries of heptagon-pentagon defect pairs. Herein thermal properties of BC3GrHs with various defects were evaluated applying molecular dynamic (MD) simulation. First, temperature profiles along BC3GrHs interface with symmetric and asymmetric pentagon-heptagon pairs at 300 K, ΔT = 40 K, and zero strain were compared. Next, the effect of temperature, strain, and temperature gradient (ΔT) on Kaptiza resistance (interfacial thermal resistance at the grain boundary) was visualized. It was found that Kapitza resistance increases upon an increase of defect density in the grain boundary. Besides, among symmetric grain boundaries, 5-7-6-6 and 5-7-5-7 defect pairs showed the lowest (2 × 10-10 m2 K W-1) and highest (4.9 × 10-10 m2 K W-1) values of Kapitza resistance, respectively. Regarding parameters affecting Kapitza resistance, increased temperature and strain caused the rise and drop in Kaptiza thermal resistance, respectively. However, lengthier nanosheets had lower Kapitza thermal resistance. Moreover, changes in temperature gradient had a negligible effect on the Kapitza resistance.