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Kuznetsov A, Moiseev E, Abramov AN, Fominykh N, Sharov VA, Kondratev VM, Shishkin II, Kotlyar KP, Kirilenko DA, Fedorov VV, Kadinskaya SA, Vorobyev AA, Mukhin IS, Arsenin AV, Volkov VS, Kravtsov V, Bolshakov AD. Elastic Gallium Phosphide Nanowire Optical Waveguides-Versatile Subwavelength Platform for Integrated Photonics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2301660. [PMID: 37178371 DOI: 10.1002/smll.202301660] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 04/09/2023] [Indexed: 05/15/2023]
Abstract
Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should satisfy criteria of high optical density, small cross-section, technological feasibility and structural perfection. All these criteria are met with self-assembled gallium phosphide (GaP) epitaxial nanowires. In this work, the effects of the nanowire geometry on their waveguiding properties are studied both experimentally and numerically. Cut-off wavelength dependence on the nanowire diameter is analyzed to demonstrate the pathways for fabrication of low-loss and subwavelength cross-section waveguides for visible and near-infrared (IR) ranges. Probing the waveguides with a supercontinuum laser unveils the filtering properties of the nanowires due to their resonant action. The nanowires exhibit perfect elasticity allowing fabrication of curved waveguides. It is demonstrated that for the nanowire diameters exceeding the cut-off value, the bending does not sufficiently reduce the field confinement promoting applicability of the approach for the development of nanoscale waveguides with a preassigned geometry. Optical X-coupler made of two GaP nanowires allowing for spectral separation of the signal is fabricated. The results of this work open new ways for the utilization of GaP nanowires as elements of advanced photonic logic circuits and nanoscale interferometers.
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Affiliation(s)
- Alexey Kuznetsov
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg, 199034, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Eduard Moiseev
- International Laboratory of Quantum Optoelectronics, HSE University, 16 Soyuza Pechatnikov, St. Petersburg, 190008, Russia
| | - Artem N Abramov
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
| | - Nikita Fominykh
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Vladislav A Sharov
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- Ioffe Institute, Politekhnicheskaya Str. 26, St. Petersburg, 194021, Russia
| | - Valeriy M Kondratev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Ivan I Shishkin
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
| | - Konstantin P Kotlyar
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg, 199034, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky Pr., 26, St. Petersburg, 190103, Russia
| | - Demid A Kirilenko
- Ioffe Institute, Politekhnicheskaya Str. 26, St. Petersburg, 194021, Russia
| | - Vladimir V Fedorov
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- Higher School of Engineering Physics, Peter the Great Saint Petersburg Polytechnic University, Politekhnicheskaya 29, Saint Petersburg, 195251, Russia
| | - Svetlana A Kadinskaya
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Alexandr A Vorobyev
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
| | - Ivan S Mukhin
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
- Higher School of Engineering Physics, Peter the Great Saint Petersburg Polytechnic University, Politekhnicheskaya 29, Saint Petersburg, 195251, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
| | - Vasily Kravtsov
- School of Physics and Engineering, ITMO University, 49 Kronverksky Pr., St. Petersburg, 197101, Russia
| | - Alexey D Bolshakov
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, St. Petersburg, 199034, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, Dolgoprudny, 141701, Russia
- Center for Nanotechnologies, Alferov University, Khlopina 8/3, Saint Petersburg, 194021, Russia
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Kuznetsov A, Roy P, Grudinin DV, Kondratev VM, Kadinskaya SA, Vorobyev AA, Kotlyar KP, Ubyivovk EV, Fedorov VV, Cirlin GE, Mukhin IS, Arsenin AV, Volkov VS, Bolshakov AD. Self-assembled photonic structure: a Ga optical antenna on GaP nanowires. NANOSCALE 2023; 15:2332-2339. [PMID: 36637064 DOI: 10.1039/d2nr04571k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Semiconductor nanowires are the perfect platform for nanophotonic applications owing to their resonant, waveguiding optical properties and technological capabilities providing control over their crystalline and chemical compositions. The vapor-liquid-solid growth mechanism allows the formation of hybrid metal-dielectric nanostructures promoting sub-wavelength light manipulation. In this work, we explore both experimentally and numerically the plasmonic effects promoted by a gallium (Ga) nanoparticle optical antenna decorating the facet of gallium phosphide (GaP) nanowires. Raman, photoluminescence and near-field mapping techniques are used to study the effects. We demonstrate several phenomena including field enhancement, antenna effect and increase in internal reflection. We show that the observed effects have to be considered when nanowires with a plasmonic particle are used in nanophotonic circuits and discuss the ways for utilization of these effects for efficient coupling of light into nanowire waveguide and field tailoring. The results open up promising pathways for the development of both passive and active nanophotonic elements, light harvesting and sensorics.
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Affiliation(s)
- Alexey Kuznetsov
- St Petersburg State University, St Petersburg 199034, Russia.
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | - Prithu Roy
- ITMO University, 197101, Saint Petersburg, Russia
| | - Dmitry V Grudinin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
| | - Valeriy M Kondratev
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | | | - Alexandr A Vorobyev
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | - Konstantin P Kotlyar
- St Petersburg State University, St Petersburg 199034, Russia.
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | | | - Vladimir V Fedorov
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | - George E Cirlin
- St Petersburg State University, St Petersburg 199034, Russia.
| | - Ivan S Mukhin
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
- ITMO University, 197101, Saint Petersburg, Russia
- Higher School of Engineering Physics, Peter the Great Saint Petersburg Polytechnic University, Saint Petersburg 195251, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
| | - Alexey D Bolshakov
- St Petersburg State University, St Petersburg 199034, Russia.
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
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Ghukasyan A, Oliveira P, Goktas NI, LaPierre R. Thermal Conductivity of GaAs Nanowire Arrays Measured by the 3ω Method. NANOMATERIALS 2022; 12:nano12081288. [PMID: 35457996 PMCID: PMC9026786 DOI: 10.3390/nano12081288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/04/2022] [Accepted: 04/07/2022] [Indexed: 11/16/2022]
Abstract
Vertical nanowire (NW) arrays are the basis for a variety of nanoscale devices. Understanding heat transport in these devices is an important concern, especially for prospective thermoelectric applications. To facilitate thermal conductivity measurements on as-grown NW arrays, a common NW-composite device architecture was adapted for use with the 3ω method. We describe the application of this technique to obtain thermal conductivity measurements on two GaAs NW arrays featuring ~130 nm diameter NWs with a twinning superlattice (TSL) and a polytypic (zincblende/wurtzite) crystal structure, respectively. Our results indicate NW thermal conductivities of 5.2 ± 1.0 W/m-K and 8.4 ± 1.6 W/m-K in the two samples, respectively, showing a significant reduction in the former, which is the first such measurements on TSL NWs. Nearly an order of magnitude difference from the bulk thermal conductivity (~50 W/m-K) is observed for the TSL NW sample, one of the lowest values measured to date for GaAs NWs.
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Ghukasyan A, Goktas NI, Dubrovskii VG, LaPierre RR. Phase Diagram for Twinning Superlattice Te-Doped GaAs Nanowires. NANO LETTERS 2022; 22:1345-1349. [PMID: 35089042 DOI: 10.1021/acs.nanolett.1c04680] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Twinning superlattices (TSLs) are a growing class of semiconductor structures proposed as a means of phonon and optical engineering in nanowires (NWs). In this work, we examine TSL formation in Te-doped GaAs NWs grown by a self-assisted vapor-liquid-solid mechanism (with a Ga droplet as the seed particle), using selective-area molecular beam epitaxy. In these NWs, the TSL structure is comprised of alternating zincblende twins, whose formation is promoted by the introduction of Te dopants. Using transmission electron microscopy, we investigated the crystal structure of NWs across various growth conditions (V/III flux ratio, temperature), finding periodic TSLs only at the low V/III flux ratio of 0.5 and intermediate growth temperatures of 492 to 537 °C. These results are explained by a kinetic growth model based on the diffusion flux feeding the Ga droplet.
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Affiliation(s)
- Ara Ghukasyan
- Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7
| | - Nebile Isik Goktas
- Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7
| | - Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Ray R LaPierre
- Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7
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