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Jiang C, Wang H, Chen H, Dai H, Zhang Z, Li X, Yao Z. Broadband Quantum Dot Superluminescent Diode with Simultaneous Three-State Emission. Nanomaterials 2022; 12:nano12091431. [PMID: 35564140 PMCID: PMC9103863 DOI: 10.3390/nano12091431] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Revised: 04/05/2022] [Accepted: 04/19/2022] [Indexed: 02/01/2023]
Abstract
Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES1) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES1 and second excited-state (ES2) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources.
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Affiliation(s)
- Cheng Jiang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; (C.J.); (H.W.)
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China;
| | - Hongpei Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; (C.J.); (H.W.)
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China;
| | - Hongmei Chen
- Qingdao Yichen Leishuo Technology Co., Ltd., Qingdao 266000, China;
| | - Hao Dai
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; (C.J.); (H.W.)
| | - Ziyang Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; (C.J.); (H.W.)
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China;
- Correspondence: (Z.Z.); (X.L.); (Z.Y.)
| | - Xiaohui Li
- School of Physics & Information Technology, Shaanxi Normal University, Xi’an 710119, China
- Correspondence: (Z.Z.); (X.L.); (Z.Y.)
| | - Zhonghui Yao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; (C.J.); (H.W.)
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China;
- Correspondence: (Z.Z.); (X.L.); (Z.Y.)
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