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Cheema SS, Shanker N, Hsu SL, Schaadt J, Ellis NM, Cook M, Rastogi R, Pilawa-Podgurski RCN, Ciston J, Mohamed M, Salahuddin S. Giant energy storage and power density negative capacitance superlattices. Nature 2024; 629:803-809. [PMID: 38593860 DOI: 10.1038/s41586-024-07365-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Accepted: 03/29/2024] [Indexed: 04/11/2024]
Abstract
Dielectric electrostatic capacitors1, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems2-5. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness2,3,6, leaving an opportunity for electrostatic microcapacitors. Here we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO2-ZrO2-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2-ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect7-12, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm-3) (ref. 13). Second, to increase total energy storage, antiferroelectric superlattice engineering14 scales the energy storage performance beyond the conventional thickness limitations of HfO2-ZrO2-based (anti)ferroelectricity15 (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm-2 and 300 kW cm-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy1,16. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors5, which can unlock substantial energy storage and power delivery performance for electronic microsystems17-19.
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Affiliation(s)
- Suraj S Cheema
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Nirmaan Shanker
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Shang-Lin Hsu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Joseph Schaadt
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
- Department of Mechanical Engineering, University of California, Berkeley, CA, USA
| | - Nathan M Ellis
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Matthew Cook
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Ravi Rastogi
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | | | - Jim Ciston
- National Center for Electron Microscopy Facility, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mohamed Mohamed
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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Choi H, Cho YH, Kim SH, Yang K, Park MH. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry. J Phys Chem Lett 2024; 15:983-997. [PMID: 38252652 DOI: 10.1021/acs.jpclett.3c03363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of achieving high endurance and high write/read speed and the optimal material properties to achieve them are discussed. In DRAM applications, the trade-off between remanent polarization (Pr), endurance, and operation speed is highlighted, focusing on reducing the critical material property Ec (coercive field). Novel phase formation and interfacial redox chemistry are reviewed as potential game-changers for ferroelectric memories. Regarding Flash operation, the need for an ideal Pr and Ec ratio is emphasized, as excessive Pr can lead to charge trapping, resulting in fatigue and pass disturbance in the NAND array. Achieving the right balance of Pr and Ec for ferroelectric NAND with hafnia-based ferroelectrics remains challenging. This Perspective also recognizes technical advancements in FeFET technology, offering potential solutions for improved performance and casting a positive outlook on the future of ferroelectric memory technology.
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Affiliation(s)
- Hyojun Choi
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Yong Hyeon Cho
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Se Hyun Kim
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Min Hyuk Park
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
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Khaldi O, Ferhi H, Larbi T, Jomni F, Ben Younes R. Dielectric response of high- κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view. Phys Chem Chem Phys 2023; 25:22310-22318. [PMID: 37578192 DOI: 10.1039/d3cp01552a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2023]
Abstract
Herein, we report on the dielectric-voltage nonlinearities under a constant electric field in metal insulator metal (MIM) capacitor-based hafnium oxide (HfO2) with respect to the frequency range. Via the Schottky emission mechanism obtained from the current-voltage characteristic (I-V), we calculated the optical dielectric constant εr,opt for different external DC bias values. The extracted εr,opt revealed a quadratic dependence on the applied external field. This confirmed that such dependence is a common feature of high-κ oxides in the low and high frequency ranges. The results were correlated with the ab initio calculations using the finite field (FF) method as implemented in the CRYSTAL 17 code. Good agreement between the results from the FF method, I-V plots, as well as the UV-visible spectrometry is observed. To assess any change in the dielectric constant upon the application of an external electric field, several parameters such as exchange-correlation functional, basis sets (BSs), as well as supercell expansion factor (N) were tested. The corresponding parameters have a great influence on the macroscopic electron density and voltage along the field direction and thus on the optical response. For N > 2 and rich basis sets, the hybrid functional B3LYP revealed good agreement with the experimental results as compared to other Hamiltonian's forms such as LDA, PW-GGA and HF.
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Affiliation(s)
- Othmen Khaldi
- University of Tunis El Manar, Laboratory of Materials, Organization and Properties, LMOP(LR99ES17), 2092, Tunis, Tunisia.
| | - Hanen Ferhi
- University of Gafsa, Laboratory of Technology, Energy and Innovative Materials, Department of Physics, Faculty of Sciences of Gafsa, 2112, Gafsa, Tunisia
| | - Tarek Larbi
- University of Tunis El Manar, Laboratory of Nanomaterials, Nanotechnology and Energy, 2092, Tunis, Tunisia
| | - Fethi Jomni
- University of Tunis El Manar, Laboratory of Materials, Organization and Properties, LMOP(LR99ES17), 2092, Tunis, Tunisia.
| | - Rached Ben Younes
- University of Gafsa, Laboratory of Technology, Energy and Innovative Materials, Department of Physics, Faculty of Sciences of Gafsa, 2112, Gafsa, Tunisia
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