1
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Aigner A, Weber T, Wester A, Maier SA, Tittl A. Continuous spectral and coupling-strength encoding with dual-gradient metasurfaces. NATURE NANOTECHNOLOGY 2024; 19:1804-1812. [PMID: 39187580 PMCID: PMC11638065 DOI: 10.1038/s41565-024-01767-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Accepted: 07/18/2024] [Indexed: 08/28/2024]
Abstract
To control and enhance light-matter interactions at the nanoscale, two parameters are central: the spectral overlap between an optical cavity mode and the material's spectral features (for example, excitonic or molecular absorption lines), and the quality factor of the cavity. Controlling both parameters simultaneously would enable the investigation of systems with complex spectral features, such as multicomponent molecular mixtures or heterogeneous solid-state materials. So far, it has been possible only to sample a limited set of data points within this two-dimensional parameter space. Here we introduce a nanophotonic approach that can simultaneously and continuously encode the spectral and quality-factor parameter space within a compact spatial area. We use a dual-gradient metasurface design composed of a two-dimensional array of smoothly varying subwavelength nanoresonators, each supporting a unique mode based on symmetry-protected bound states in the continuum. This results in 27,500 distinct modes and a mode density approaching the theoretical upper limit for metasurfaces. By applying our platform to surface-enhanced molecular spectroscopy, we find that the optimal quality factor for maximum sensitivity depends on the amount of analyte, enabling effective molecular detection regardless of analyte concentration within a single dual-gradient metasurface. Our design provides a method to analyse the complete spectral and coupling-strength parameter space of complex material systems for applications such as photocatalysis, chemical sensing and entangled photon generation.
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Affiliation(s)
- Andreas Aigner
- Chair in Hybrid Nanosystems, Nano-Institute Munich, Faculty of Physics, Ludwig-Maximilians-Universtität München, Munich, Germany
| | - Thomas Weber
- Chair in Hybrid Nanosystems, Nano-Institute Munich, Faculty of Physics, Ludwig-Maximilians-Universtität München, Munich, Germany
| | - Alwin Wester
- Chair in Hybrid Nanosystems, Nano-Institute Munich, Faculty of Physics, Ludwig-Maximilians-Universtität München, Munich, Germany
| | - Stefan A Maier
- School of Physics and Astronomy, Monash University, Clayton, Victoria, Australia.
- The Blackett Laboratory, Department of Physics, Imperial College London, London, UK.
| | - Andreas Tittl
- Chair in Hybrid Nanosystems, Nano-Institute Munich, Faculty of Physics, Ludwig-Maximilians-Universtität München, Munich, Germany.
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2
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Berdnikov Y, Holewa P, Kadkhodazadeh S, Śmigiel JM, Sakanas A, Frackowiak A, Yvind K, Syperek M, Semenova E. Near-critical Stranski-Krastanov growth of InAs/InP quantum dots. Sci Rep 2024; 14:23697. [PMID: 39390005 PMCID: PMC11467334 DOI: 10.1038/s41598-024-70451-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 08/16/2024] [Indexed: 10/12/2024] Open
Abstract
This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between 10 7 and 10 10 cm - 2 . Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles with well-isolated QD-originated emission lines in the telecom C-band.
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Affiliation(s)
- Yury Berdnikov
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, 2800, Denmark.
- DTU Electro, Technical University of Denmark, Kongens Lyngby, 2800, Denmark.
| | - Paweł Holewa
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
- DTU Electro, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
- Laboratory for Optical Spectroscopy of Nanostructures, Wrocław University of Science and Technology, Wrocław, 50-370, Poland
| | - Shima Kadkhodazadeh
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
- DTU Nanolab - National Centre for Nano Fabrication and Characterization, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Jan Mikołaj Śmigiel
- Laboratory for Optical Spectroscopy of Nanostructures, Wrocław University of Science and Technology, Wrocław, 50-370, Poland
| | - Aurimas Sakanas
- DTU Electro, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | | | - Kresten Yvind
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
- DTU Electro, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Marcin Syperek
- Laboratory for Optical Spectroscopy of Nanostructures, Wrocław University of Science and Technology, Wrocław, 50-370, Poland
| | - Elizaveta Semenova
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, 2800, Denmark.
- DTU Electro, Technical University of Denmark, Kongens Lyngby, 2800, Denmark.
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3
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Krieger TM, Weidinger C, Oberleitner T, Undeutsch G, Rota MB, Tajik N, Aigner M, Buchinger Q, Schimpf C, Garcia AJ, Covre da Silva SF, Höfling S, Huber-Loyola T, Trotta R, Rastelli A. Postfabrication Tuning of Circular Bragg Resonators for Enhanced Emitter-Cavity Coupling. ACS PHOTONICS 2024; 11:596-603. [PMID: 38405396 PMCID: PMC10885778 DOI: 10.1021/acsphotonics.3c01480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 12/25/2023] [Accepted: 12/29/2023] [Indexed: 02/27/2024]
Abstract
Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum light with high brightness and low multiphoton probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate an ∼16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.
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Affiliation(s)
- Tobias M. Krieger
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Christian Weidinger
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Thomas Oberleitner
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Gabriel Undeutsch
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Michele B. Rota
- Dipartimento
di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Naser Tajik
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Maximilian Aigner
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Quirin Buchinger
- Lehrstuhl
für Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Christian Schimpf
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Ailton J. Garcia
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Saimon F. Covre da Silva
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
| | - Sven Höfling
- Lehrstuhl
für Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Tobias Huber-Loyola
- Lehrstuhl
für Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Rinaldo Trotta
- Dipartimento
di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Armando Rastelli
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
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4
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Zheng Z, Rocco D, Ren H, Sergaeva O, Zhang Y, Whaley KB, Ying C, de Ceglia D, De-Angelis C, Rahmani M, Xu L. Advances in nonlinear metasurfaces for imaging, quantum, and sensing applications. NANOPHOTONICS (BERLIN, GERMANY) 2023; 12:4255-4281. [PMID: 39634716 PMCID: PMC11501303 DOI: 10.1515/nanoph-2023-0526] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 10/31/2023] [Indexed: 12/07/2024]
Abstract
Metasurfaces, composed of artificial meta-atoms of subwavelength size, can support strong light-matter interaction based on multipolar resonances and plasmonics, hence offering the great capability of empowering nonlinear generation. Recently, owing to their ability to manipulate the amplitude and phase of the nonlinear emission in the subwavelength scale, metasurfaces have been recognized as ultra-compact, flat optical components for a vast range of applications, including nonlinear imaging, quantum light sources, and ultrasensitive sensing. This review focuses on the recent progress on nonlinear metasurfaces for those applications. The principles and advances of metasurfaces-based techniques for image generation, including image encoding, holography, and metalens, are investigated and presented. Additionally, the overview and development of spontaneous photon pair generation from metasurfaces are demonstrated and discussed, focusing on the aspects of photon pair generation rate and entanglement of photon pairs. The recent blossoming of the nonlinear metasurfaces field has triggered growing interest to explore its ability to efficiently up-convert infrared images of arbitrary objects to visible images and achieve spontaneous parametric down-conversion. This recently emerged direction holds promising potential for the next-generation technology in night-vision, quantum computing, and biosensing fields.
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Affiliation(s)
- Ze Zheng
- Department of Engineering, Advanced Optics and Photonics Laboratory, School of Science Technology, Nottingham Trent University, Nottingham, UK
| | - Davide Rocco
- Department of Information Engineering, University of Brescia, Brescia, Italy
| | - Hang Ren
- Department of Chemistry, University of California, Berkeley, CA, USA
| | - Olga Sergaeva
- Department of Information Engineering, University of Brescia, Brescia, Italy
| | - Yipei Zhang
- Department of Chemistry, University of California, Berkeley, CA, USA
| | | | - Cuifeng Ying
- Department of Engineering, Advanced Optics and Photonics Laboratory, School of Science Technology, Nottingham Trent University, Nottingham, UK
| | - Domenico de Ceglia
- Department of Information Engineering, University of Brescia, Brescia, Italy
| | | | - Mohsen Rahmani
- Department of Engineering, Advanced Optics and Photonics Laboratory, School of Science Technology, Nottingham Trent University, Nottingham, UK
| | - Lei Xu
- Department of Engineering, Advanced Optics and Photonics Laboratory, School of Science Technology, Nottingham Trent University, Nottingham, UK
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5
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Descamps E, Fabre N, Keller A, Milman P. Quantum Metrology Using Time-Frequency as Quantum Continuous Variables: Resources, Sub-Shot-Noise Precision and Phase Space Representation. PHYSICAL REVIEW LETTERS 2023; 131:030801. [PMID: 37540861 DOI: 10.1103/physrevlett.131.030801] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2022] [Revised: 05/02/2023] [Accepted: 05/30/2023] [Indexed: 08/06/2023]
Abstract
We study the role of the electromagnetic field's frequency on the precision limits of time measurements from a quantum perspective, using single photons as a paradigmatic system. We demonstrate that a quantum enhancement of precision is possible only when combining both intensity and spectral resources and, in particular, that spectral correlations enable a quadratic scaling of precision with the number of probes. We identify the general mathematical structure of nonphysical states that achieve the Heisenberg limit and show how a finite spectral variance may cause a quantum-to-classical-like transition in precision scaling for pure states similar to the one observed for noisy systems. Finally, we provide a clear and consistent geometrical time-frequency phase space interpretation of our results, identifying what should be considered as spectral classical resources.
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Affiliation(s)
- Eloi Descamps
- Département de Physique de l'Ecole Normale Supérieure-PSL, 45 rue d'Ulm, 75230 Paris Cedex 05, France
- CNRS, Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, 75013 Paris, France
| | - Nicolas Fabre
- Departamento de Óptica, Facultad de Física, Universidad Complutense, 28040 Madrid, Spain
- Telecom Paris, Institut Polytechnique de Paris, 19 Place Marguerite Perey, 91120 Palaiseau, France
| | - Arne Keller
- CNRS, Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, 75013 Paris, France
- Department de Physique, Université Paris-Saclay, 91405 Orsay Cedex, France
| | - Pérola Milman
- CNRS, Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, 75013 Paris, France
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6
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Luo W, Cao L, Shi Y, Wan L, Zhang H, Li S, Chen G, Li Y, Li S, Wang Y, Sun S, Karim MF, Cai H, Kwek LC, Liu AQ. Recent progress in quantum photonic chips for quantum communication and internet. LIGHT, SCIENCE & APPLICATIONS 2023; 12:175. [PMID: 37443095 DOI: 10.1038/s41377-023-01173-8] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 04/27/2023] [Accepted: 04/28/2023] [Indexed: 07/15/2023]
Abstract
Recent years have witnessed significant progress in quantum communication and quantum internet with the emerging quantum photonic chips, whose characteristics of scalability, stability, and low cost, flourish and open up new possibilities in miniaturized footprints. Here, we provide an overview of the advances in quantum photonic chips for quantum communication, beginning with a summary of the prevalent photonic integrated fabrication platforms and key components for integrated quantum communication systems. We then discuss a range of quantum communication applications, such as quantum key distribution and quantum teleportation. Finally, the review culminates with a perspective on challenges towards high-performance chip-based quantum communication, as well as a glimpse into future opportunities for integrated quantum networks.
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Affiliation(s)
- Wei Luo
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Lin Cao
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuzhi Shi
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, 200092, Shanghai, China.
| | - Lingxiao Wan
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Hui Zhang
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Shuyi Li
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Guanyu Chen
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuan Li
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Sijin Li
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore
| | - Yunxiang Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Shihai Sun
- School of Electronics and Communication Engineering, Sun Yat-Sen University, 518100, Shenzhen, Guangdong, China
| | - Muhammad Faeyz Karim
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore.
| | - Hong Cai
- Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore.
| | - Leong Chuan Kwek
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, Singapore, 117543, Singapore.
- National Institute of Education, Nanyang Technological University, Singapore, 637616, Singapore.
| | - Ai Qun Liu
- Quantum Science and Engineering Centre (QSec), Nanyang Technological University, Singapore, 639798, Singapore.
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7
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Lehner BU, Seidelmann T, Undeutsch G, Schimpf C, Manna S, Gawełczyk M, Covre da Silva SF, Yuan X, Stroj S, Reiter DE, Axt VM, Rastelli A. Beyond the Four-Level Model: Dark and Hot States in Quantum Dots Degrade Photonic Entanglement. NANO LETTERS 2023; 23:1409-1415. [PMID: 36745448 PMCID: PMC9951244 DOI: 10.1021/acs.nanolett.2c04734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 02/01/2023] [Indexed: 06/18/2023]
Abstract
Entangled photon pairs are essential for a multitude of quantum photonic applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to ∼65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures.
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Affiliation(s)
- Barbara Ursula Lehner
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University, Linz4040, Austria
- Secure
and Correct Systems Lab, Linz Institute
of Technology, 4040Linz, Austria
| | - Tim Seidelmann
- Theoretische
Physik III, Universität Bayreuth, 95440Bayreuth, Germany
| | - Gabriel Undeutsch
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University, Linz4040, Austria
| | - Christian Schimpf
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University, Linz4040, Austria
| | - Santanu Manna
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University, Linz4040, Austria
| | - Michał Gawełczyk
- Institute
of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, 50-370 Wrocław, Poland
| | | | - Xueyong Yuan
- School
of Physics, Southeast University, Nanjing211189, China
| | - Sandra Stroj
- Forschungszentrum
Mikrotechnik, FH Vorarlberg, 6850Dornbirn, Austria
| | - Doris E. Reiter
- Condensed
Matter Theory, TU Dortmund, 44221Dortmund, Germany
| | | | - Armando Rastelli
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University, Linz4040, Austria
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8
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Seidelmann T, Schimpf C, Bracht TK, Cosacchi M, Vagov A, Rastelli A, Reiter DE, Axt VM. Two-Photon Excitation Sets Limit to Entangled Photon Pair Generation from Quantum Emitters. PHYSICAL REVIEW LETTERS 2022; 129:193604. [PMID: 36399754 DOI: 10.1103/physrevlett.129.193604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Accepted: 09/21/2022] [Indexed: 06/16/2023]
Abstract
Entangled photon pairs are key to many novel applications in quantum technologies. Semiconductor quantum dots can be used as sources of on-demand, highly entangled photons. The fidelity to a fixed maximally entangled state is limited by the excitonic fine-structure splitting. This work demonstrates that, even if this splitting is absent, the degree of entanglement cannot reach unity when the excitation pulse in a two-photon resonance scheme has a finite duration. The degradation of the entanglement has its origin in a dynamically induced splitting of the exciton states caused by the laser pulse itself. Hence, in the setting explored here, the excitation process limits the achievable concurrence for entangled photons generated in an optically excited four-level quantum emitter.
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Affiliation(s)
- T Seidelmann
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
| | - C Schimpf
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - T K Bracht
- Institut für Festkörpertheorie, Universität Münster, 48149 Münster, Germany
| | - M Cosacchi
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
| | - A Vagov
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
| | - A Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - D E Reiter
- Institut für Festkörpertheorie, Universität Münster, 48149 Münster, Germany
| | - V M Axt
- Lehrstuhl für Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany
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9
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Tuktamyshev A, Vichi S, Cesura FG, Fedorov A, Carminati G, Lambardi D, Pedrini J, Vitiello E, Pezzoli F, Bietti S, Sanguinetti S. Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3571. [PMID: 36296766 PMCID: PMC9607536 DOI: 10.3390/nano12203571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Revised: 09/27/2022] [Accepted: 10/07/2022] [Indexed: 06/16/2023]
Abstract
We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.
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Affiliation(s)
- Artur Tuktamyshev
- Isituto Nazionale di Fisica Nucleare, Sezione di Milano-Bicocca, 20100 Milano, Italy
| | - Stefano Vichi
- Isituto Nazionale di Fisica Nucleare, Sezione di Milano-Bicocca, 20100 Milano, Italy
| | | | - Alexey Fedorov
- Centro Nazionale delle Ricerche, Istituto di Fotonica e Nanotecnologie, 20100 Milano, Italy
| | - Giuseppe Carminati
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
| | - Davide Lambardi
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
| | - Jacopo Pedrini
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
| | - Elisa Vitiello
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
| | - Fabio Pezzoli
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
| | - Sergio Bietti
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
| | - Stefano Sanguinetti
- Isituto Nazionale di Fisica Nucleare, Sezione di Milano-Bicocca, 20100 Milano, Italy
- Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy
- Centro Nazionale delle Ricerche, Istituto di Fotonica e Nanotecnologie, 20100 Milano, Italy
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10
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Huang X, Yang J, Song C, Rao M, Yu Y, Yu S. Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory. NANOPHOTONICS (BERLIN, GERMANY) 2022; 11:3093-3100. [PMID: 39634667 PMCID: PMC11501422 DOI: 10.1515/nanoph-2022-0120] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Revised: 05/08/2022] [Accepted: 05/14/2022] [Indexed: 12/07/2024]
Abstract
Epitaxial semiconductor quantum dots (QDs) have been demonstrated as on-demand entangled photon sources through biexciton-exciton (XX-X) cascaded radiative processes. However, perfect entangled photon emitters at the specific wavelengths of 880 nm or 980 nm, that are important for heralded entanglement distribution by absorptive quantum memories, remain a significant challenge. We successfully extend the QD emission wavelength to 880 nm via capping Stranski-Krastanow grown In(Ga)As/GaAs QDs with an ultra-thin Al x Ga1-x As layer. After carefully investigating the mechanisms governing the vanishing of wetting-layer (WL) states and the anisotropy of QDs, we optimize the growth conditions and achieve a strong suppression of the WL emission as well as a measured minor fine structure splitting of only ∼(3.2 ± 0.25) μeV for the exciton line. We further extend this method to fabricate In(Ga)As QDs emitted at 980 nm via introducing InGaAs capping layer, and demonstrate a two-photon resonant excitation of the biexciton without any additional optical or electrical stabilized source. These QDs with high symmetry and stability represent a highly promising platform for the generation of polarization entanglement and experiments on the interaction of photons from dissimilar sources, such as rare-earth-ion-doped crystals for solid quantum memory.
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Affiliation(s)
- Xiaoying Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Jiawei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Changkun Song
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Mujie Rao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
| | - Siyuan Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou510275, China
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11
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Richter M, Hughes S. Enhanced TEMPO Algorithm for Quantum Path Integrals with Off-Diagonal System-Bath Coupling: Applications to Photonic Quantum Networks. PHYSICAL REVIEW LETTERS 2022; 128:167403. [PMID: 35522504 DOI: 10.1103/physrevlett.128.167403] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Accepted: 03/23/2022] [Indexed: 06/14/2023]
Abstract
Multitime system correlation functions are relevant in various areas of physics and science, dealing with system-bath interaction including spectroscopy and quantum optics, where many of these schemes include an off-diagonal system bath interaction. Here we extend the enhanced time-evolving matrix product operator (eTEMPO) algorithm for quantum path integrals using tensor networks [Phys. Rev. Lett. 123, 240602 (2019)PRLTAO0031-900710.1103/PhysRevLett.123.240602 to open quantum systems with off-diagonal coupling beyond a single two level system. We exemplify the approach on a coupled cavity waveguide system with spatially separated quantum two-state emitters, though many other applications in material science are possible, including entangled photon propagation, photosynthesis spectroscopy, and on-chip quantum optics with realistic dissipation.
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Affiliation(s)
- Marten Richter
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, EW 7-1, 10623 Berlin, Germany
| | - Stephen Hughes
- Department of Physics, Engineering Physics, and Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
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12
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Wang DS, Anali İ, Yelin SF. Entangled photons from composite cascade emitters. OPTICS EXPRESS 2022; 30:11317-11330. [PMID: 35473079 DOI: 10.1364/oe.452935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Accepted: 03/09/2022] [Indexed: 06/14/2023]
Abstract
One of the most versatile sources for entangled photons are emitters that interact via more than one tunable mechanism. Here, we demonstrate how hybridization and dipole-dipole interactions-potentially simultaneously available in colloidal quantum dots and molecular aggregates-leveraged in conjunction can couple simple, well understood emitters into composite emitters with flexible control over the level structure. We show that cascade decay through carefully designed level structures can result in emission of frequency-entangled photons with Bell states and three-photon GHZ states as example cases. These results pave the way toward rational design of quantum optical emitters of entangled photons.
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13
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Varo S, Juska G, Pelucchi E. An intuitive protocol for polarization-entanglement restoral of quantum dot photon sources with non-vanishing fine-structure splitting. Sci Rep 2022; 12:4723. [PMID: 35304526 PMCID: PMC8933574 DOI: 10.1038/s41598-022-08535-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 03/02/2022] [Indexed: 11/10/2022] Open
Abstract
Generation of polarization-entangled photons from quantum dots via the biexciton-exciton recombination cascade is complicated by the presence of an energy splitting between the intermediate excitonic levels, which severely degrades the quality of the entangled photon source. In this paper we present a novel, conceptually simple and straightforward proposal for restoring the entanglement of said source by applying a cascade of time-dependent operations on the emitted photons. This is in striking contrast with the techniques usually employed, that act on the quantum emitter itself in order to remove the fine structure splitting at its root. The feasibility of the implementation with current technology is discussed, and the robustness of the proposed compensation scheme with respect to imperfections of the experimental apparatus is evaluated via a series of Monte Carlo simulations.
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Affiliation(s)
- Simone Varo
- Tyndall National Institute, University College Cork, Dyke Parade, Cork, Republic of Ireland.
| | - Gediminas Juska
- Tyndall National Institute, University College Cork, Dyke Parade, Cork, Republic of Ireland
| | - Emanuele Pelucchi
- Tyndall National Institute, University College Cork, Dyke Parade, Cork, Republic of Ireland
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14
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Chierchie F, Moroni GF, Stefanazzi L, Paolini E, Tiffenberg J, Estrada J, Cancelo G, Uemura S. Smart Readout of Nondestructive Image Sensors with Single Photon-Electron Sensitivity. PHYSICAL REVIEW LETTERS 2021; 127:241101. [PMID: 34951780 DOI: 10.1103/physrevlett.127.241101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 10/22/2021] [Accepted: 11/05/2021] [Indexed: 06/14/2023]
Abstract
Image sensors with nondestructive charge readout provide single-photon or single-electron sensitivity, but at the cost of long readout times. We present a smart readout technique to allow the use of these sensors in visible light and other applications that require faster readout times. The method optimizes the readout noise and time by changing the number of times pixels are read out either statically, by defining an arbitrary number of regions of interest in the array, or dynamically, depending on the charge or energy of interest in the pixel. This technique is tested in a Skipper CCD showing that it is possible to obtain deep subelectron noise, and therefore, high resolution of quantized charge, while dynamically changing the readout noise of the sensor. These faster, low noise readout techniques show that the skipper CCD is a competitive technology even where other technologies such as electron multiplier charge coupled devices, silicon photo multipliers, etc. are currently used. This technique could allow skipper CCDs to benefit new astronomical instruments, quantum imaging, exoplanet search and study, and quantum metrology.
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Affiliation(s)
- Fernando Chierchie
- Instituto de Investigaciones en Ingeniería Eléctrica "Alfredo Desages" (IIIE), Departamento de Ingeniería Eléctrica y de Computadoras. CONICET and Universidad Nacional del Sur (UNS), Bahía Blanca 8000, Argentina
| | | | - Leandro Stefanazzi
- Fermi National Accelerator Laboratory, Batavia, Illinois 60510-5011, USA
| | - Eduardo Paolini
- Instituto de Investigaciones en Ingeniería Eléctrica "Alfredo Desages" (IIIE), Departamento de Ingeniería Eléctrica y de Computadoras. CONICET and Universidad Nacional del Sur (UNS), Bahía Blanca 8000, Argentina
| | - Javier Tiffenberg
- Fermi National Accelerator Laboratory, Batavia, Illinois 60510-5011, USA
| | - Juan Estrada
- Fermi National Accelerator Laboratory, Batavia, Illinois 60510-5011, USA
| | - Gustavo Cancelo
- Fermi National Accelerator Laboratory, Batavia, Illinois 60510-5011, USA
| | - Sho Uemura
- School of Physics and Astronomy, Tel-Aviv University, Tel-Aviv 69978, Israel
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15
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Anwar A, Perumangatt C, Steinlechner F, Jennewein T, Ling A. Entangled photon-pair sources based on three-wave mixing in bulk crystals. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:041101. [PMID: 34243479 DOI: 10.1063/5.0023103] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2020] [Accepted: 03/01/2021] [Indexed: 06/13/2023]
Abstract
Entangled photon pairs are a critical resource in quantum communication protocols ranging from quantum key distribution to teleportation. The current workhorse technique for producing photon pairs is via spontaneous parametric down conversion (SPDC) in bulk nonlinear crystals. The increased prominence of quantum networks has led to a growing interest in deployable high performance entangled photon-pair sources. This manuscript provides a review of the state-of-the-art bulk-optics-based SPDC sources with continuous wave pump and discusses some of the main considerations when building for deployment.
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Affiliation(s)
- Ali Anwar
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, S117543 Singapore, Singapore
| | - Chithrabhanu Perumangatt
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, S117543 Singapore, Singapore
| | - Fabian Steinlechner
- Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Straße 7, 07745 Jena, Germany
| | - Thomas Jennewein
- Institute of Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Ave. W, Waterloo, Ontario N2L 3G1, Canada
| | - Alexander Ling
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, S117543 Singapore, Singapore
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16
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Schöll E, Schweickert L, Hanschke L, Zeuner KD, Sbresny F, Lettner T, Trivedi R, Reindl M, Covre da Silva SF, Trotta R, Finley JJ, Vučković J, Müller K, Rastelli A, Zwiller V, Jöns KD. Crux of Using the Cascaded Emission of a Three-Level Quantum Ladder System to Generate Indistinguishable Photons. PHYSICAL REVIEW LETTERS 2020; 125:233605. [PMID: 33337175 DOI: 10.1103/physrevlett.125.233605] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Accepted: 10/22/2020] [Indexed: 06/12/2023]
Abstract
We investigate the degree of indistinguishability of cascaded photons emitted from a three-level quantum ladder system; in our case the biexciton-exciton cascade of semiconductor quantum dots. For the three-level quantum ladder system we theoretically demonstrate that the indistinguishability is inherently limited for both emitted photons and determined by the ratio of the lifetimes of the excited and intermediate states. We experimentally confirm this finding by comparing the quantum interference visibility of noncascaded emission and cascaded emission from the same semiconductor quantum dot. Quantum optical simulations produce very good agreement with the measurements and allow us to explore a large parameter space. Based on our model, we propose photonic structures to optimize the lifetime ratio and overcome the limited indistinguishability of cascaded photon emission from a three-level quantum ladder system.
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Affiliation(s)
- Eva Schöll
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Lucas Schweickert
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Lukas Hanschke
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
| | - Katharina D Zeuner
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Friedrich Sbresny
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
| | - Thomas Lettner
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Rahul Trivedi
- Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
| | - Marcus Reindl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | | | - Rinaldo Trotta
- Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 1, I-00185 Roma, Italy
| | - Jonathan J Finley
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
- Walter Schottky Institut and Physik Department, Technische Universität München, 85748 Garching, Germany
| | - Jelena Vučković
- Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
| | - Kai Müller
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology, Schellingstr. 4, 80799 Munich, Germany
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - Val Zwiller
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Klaus D Jöns
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
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17
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Zhao TM, Chen Y, Yu Y, Li Q, Davanco M, Liu J. Advanced technologies for quantum photonic devices based on epitaxial quantum dots. ADVANCED QUANTUM TECHNOLOGIES 2020; 3:10.1002/qute.201900034. [PMID: 36452403 PMCID: PMC9706462 DOI: 10.1002/qute.201900034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2019] [Indexed: 05/12/2023]
Abstract
Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on-demand generation of single-photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. In this review, we focus on the latest significant progress of QD photonic devices. We first discuss advanced technologies in QD growth, with special attention to droplet epitaxy and site-controlled QDs. Then we overview the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques. We extend our discussion to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light-emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.
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Affiliation(s)
- Tian Ming Zhao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yan Chen
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Qing Li
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Marcelo Davanco
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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18
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Mehta K, Achanta VG, Dasgupta S. Generation of non-classical states of photons from a metal-dielectric interface: a novel architecture for quantum information processing. NANOSCALE 2020; 12:256-261. [PMID: 31815988 DOI: 10.1039/c9nr06529f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We show the possibility to generate photons in a certain class of non-classical states from a metal-dielectric interface using dipole emitters on the interface. The photons emitted into the surface plasmon mode from the initially excited emitters radiate out in free space in a cone-shaped geometry. When detected at two detectors, these photons exhibit coalescence, a clear signature of non-classicality. Such a system can also be employed as a building block for a distributed quantum network. We further show that it is indeed feasible to implement our model using available technology.
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Affiliation(s)
- Karun Mehta
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001, India.
| | - Venu Gopal Achanta
- Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India
| | - Shubhrangshu Dasgupta
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001, India.
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19
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Seidelmann T, Ungar F, Barth AM, Vagov A, Axt VM, Cygorek M, Kuhn T. Phonon-Induced Enhancement of Photon Entanglement in Quantum Dot-Cavity Systems. PHYSICAL REVIEW LETTERS 2019; 123:137401. [PMID: 31697541 DOI: 10.1103/physrevlett.123.137401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2019] [Revised: 07/15/2019] [Indexed: 06/10/2023]
Abstract
We report on simulations of the degree of polarization entanglement of photon pairs simultaneously emitted from a quantum dot-cavity system that demand revisiting the role of phonons. Since coherence is a fundamental precondition for entanglement and phonons are known to be a major source of decoherence, it seems unavoidable that phonons can only degrade entanglement. In contrast, we demonstrate that phonons can cause a degree of entanglement that even surpasses the corresponding value for the phonon-free case. In particular, we consider the situation of comparatively small biexciton binding energies and either finite exciton or cavity mode splitting. In both cases, combinations of the splitting and the dot-cavity coupling strength are found where the entanglement exhibits a nonmonotonic temperature dependence which enables entanglement above the phonon-free level in a finite parameter range. This unusual behavior can be explained by phonon-induced renormalizations of the dot-cavity coupling g in combination with a nonmonotonic dependence of the entanglement on g that is present already without phonons.
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Affiliation(s)
- T Seidelmann
- Universität Bayreuth, Lehrstuhl für Theoretische Physik III, Universitätsstraße 30, 95447 Bayreuth, Germany
| | - F Ungar
- Universität Bayreuth, Lehrstuhl für Theoretische Physik III, Universitätsstraße 30, 95447 Bayreuth, Germany
| | - A M Barth
- Universität Bayreuth, Lehrstuhl für Theoretische Physik III, Universitätsstraße 30, 95447 Bayreuth, Germany
| | - A Vagov
- Universität Bayreuth, Lehrstuhl für Theoretische Physik III, Universitätsstraße 30, 95447 Bayreuth, Germany
- ITMO University, St. Petersburg 197101, Russia
| | - V M Axt
- Universität Bayreuth, Lehrstuhl für Theoretische Physik III, Universitätsstraße 30, 95447 Bayreuth, Germany
| | - M Cygorek
- Department of Physics, University of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - T Kuhn
- Institut für Festkörpertheorie, Universität Münster, 48149 Münster, Germany
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20
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Gurioli M, Wang Z, Rastelli A, Kuroda T, Sanguinetti S. Droplet epitaxy of semiconductor nanostructures for quantum photonic devices. NATURE MATERIALS 2019; 18:799-810. [PMID: 31086322 DOI: 10.1038/s41563-019-0355-y] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2016] [Accepted: 03/22/2019] [Indexed: 05/25/2023]
Abstract
The long dreamed 'quantum internet' would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots (QDs) are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor QDs, or 'artificial atoms'-namely, the Stranski-Krastanov (SK) and the droplet epitaxy (DE) methods. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, local droplet etching (LDE), as complementary routes to obtain high-quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometimes even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the achievements and challenges that are still open, in view of applications in quantum communication and technology.
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Affiliation(s)
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
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21
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Dalacu D, Poole PJ, Williams RL. Nanowire-based sources of non-classical light. NANOTECHNOLOGY 2019; 30:232001. [PMID: 30703755 DOI: 10.1088/1361-6528/ab0393] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Sources of quantum light that utilize photonic nanowire designs have emerged as potential candidates for high efficiency non-classical light generation in quantum information processing. In this review we cover the different platforms used to produce nanowire-based sources, highlighting the importance of waveguide design and material properties in achieving optimal performance. The limitations of the sources are identified and routes to optimization are proposed. State-of-the-art nanowire sources are compared to other solid-state quantum emitter platforms with regard to the key metrics of single photon purity, indistinguishability and entangled-pair fidelity to maximally entangled Bell states. We also discuss the unique ability of the nanowire platform to incorporate multiple emitters in the same optical mode and consider potential applications. Finally, routes to on-chip integration are discussed and the challenges facing the development of a nanowire-based scalable architecture are presented.
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Affiliation(s)
- Dan Dalacu
- National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada
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22
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Liu J, Su R, Wei Y, Yao B, Silva SFCD, Yu Y, Iles-Smith J, Srinivasan K, Rastelli A, Li J, Wang X. A solid-state source of strongly entangled photon pairs with high brightness and indistinguishability. NATURE NANOTECHNOLOGY 2019; 14:586-593. [PMID: 31011221 PMCID: PMC10941235 DOI: 10.1038/s41565-019-0435-9] [Citation(s) in RCA: 121] [Impact Index Per Article: 20.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2018] [Accepted: 03/01/2019] [Indexed: 06/09/2023]
Abstract
The generation of high-quality entangled photon pairs has been a long-sought goal in modern quantum communication and computation. So far, the most widely used entangled photon pairs have been generated from spontaneous parametric down-conversion (SPDC), a process that is intrinsically probabilistic and thus relegated to a regime of low rates of pair generation. In contrast, semiconductor quantum dots can generate triggered entangled photon pairs through a cascaded radiative decay process and do not suffer from any fundamental trade-off between source brightness and multi-pair generation. However, a source featuring simultaneously high photon extraction efficiency, high degree of entanglement fidelity and photon indistinguishability has been lacking. Here, we present an entangled photon pair source with high brightness and indistinguishability by deterministically embedding GaAs quantum dots in broadband photonic nanostructures that enable Purcell-enhanced emission. Our source produces entangled photon pairs with a pair collection probability of up to 0.65(4) (single-photon extraction efficiency of 0.85(3)), entanglement fidelity of 0.88(2), and indistinguishabilities of 0.901(3) and 0.903(3) (brackets indicate uncertainty on last digit). This immediately creates opportunities for advancing quantum photonic technologies.
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Affiliation(s)
- Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Rongbin Su
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Yuming Wei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, China
| | - Beimeng Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, China
| | | | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China
| | - Jake Iles-Smith
- School of Physics and Astronomy, The University of Sheffield, Sheffield, UK
| | - Kartik Srinivasan
- Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria.
| | - Juntao Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, China.
| | - Xuehua Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou, China.
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23
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Aharonovich I. Clearly identical photons. NATURE NANOTECHNOLOGY 2019; 14:502-503. [PMID: 31011222 DOI: 10.1038/s41565-019-0440-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Affiliation(s)
- Igor Aharonovich
- Faculty of Science, University of Technology Sydney, New South Wales, Australia.
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24
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Leon CC, Rosławska A, Grewal A, Gunnarsson O, Kuhnke K, Kern K. Photon superbunching from a generic tunnel junction. SCIENCE ADVANCES 2019; 5:eaav4986. [PMID: 31093525 PMCID: PMC6510551 DOI: 10.1126/sciadv.aav4986] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2018] [Accepted: 03/26/2019] [Indexed: 05/21/2023]
Abstract
Generating time-correlated photon pairs at the nanoscale is a prerequisite to creating highly integrated optoelectronic circuits that perform quantum computing tasks based on heralded single photons. Here, we demonstrate fulfilling this requirement with a generic tip-surface metal junction. When the junction is luminescing under DC bias, inelastic tunneling events of single electrons produce a stream of visible photons of plasmonic origin whose superbunching index is 17 (improved to a record of 70 by the authors during publication) when measured with a 53-ps instrumental resolution limit. The effect is driven electrically, rather than optically. This discovery has immediate and profound implications for quantum optics and cryptography, notwithstanding its fundamental importance to basic science and its ushering in of heralded photon experiments on the nanometer scale.
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Affiliation(s)
- Christopher C. Leon
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, DE-70569 Stuttgart, Germany
- Corresponding author. (C.C.L.); (K.Ku.)
| | - Anna Rosławska
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, DE-70569 Stuttgart, Germany
| | - Abhishek Grewal
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, DE-70569 Stuttgart, Germany
| | - Olle Gunnarsson
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, DE-70569 Stuttgart, Germany
| | - Klaus Kuhnke
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, DE-70569 Stuttgart, Germany
- Corresponding author. (C.C.L.); (K.Ku.)
| | - Klaus Kern
- Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, DE-70569 Stuttgart, Germany
- Institut de Physique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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25
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Wang H, Hu H, Chung TH, Qin J, Yang X, Li JP, Liu RZ, Zhong HS, He YM, Ding X, Deng YH, Dai Q, Huo YH, Höfling S, Lu CY, Pan JW. On-Demand Semiconductor Source of Entangled Photons Which Simultaneously Has High Fidelity, Efficiency, and Indistinguishability. PHYSICAL REVIEW LETTERS 2019; 122:113602. [PMID: 30951338 DOI: 10.1103/physrevlett.122.113602] [Citation(s) in RCA: 72] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Indexed: 06/09/2023]
Abstract
An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bull's-eye cavity with a broadband high Purcell factor of up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1), pair generation rate of 0.59(1), pair extraction efficiency of 0.62(6), and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high-efficiency multiphoton experiments and solid-state quantum repeaters.
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Affiliation(s)
- Hui Wang
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hai Hu
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - T-H Chung
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian Qin
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaoxia Yang
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - J-P Li
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - R-Z Liu
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - H-S Zhong
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Y-M He
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xing Ding
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Y-H Deng
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qing Dai
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Y-H Huo
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Sven Höfling
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- Technische Physik, Physikalisches Instität and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universitat Würzburg, Am Hubland, D-97074 Wüzburg, Germany
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom
| | - Chao-Yang Lu
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Wei Pan
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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Ramírez HY, Chou YL, Cheng SJ. Effects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dots. Sci Rep 2019; 9:1547. [PMID: 30733483 PMCID: PMC6367325 DOI: 10.1038/s41598-018-38044-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2018] [Accepted: 12/19/2018] [Indexed: 11/09/2022] Open
Abstract
Entangled photon pair generation is a crucial task for development of quantum information based technologies, and production of entangled pairs by biexciton cascade decays in semiconductor quantum dots is so far one of the most advanced techniques to achieve it. However, its scalability toward massive implementation requires further understanding and better tuning mechanisms to suppress the fine structure splitting between polarized exciton states, which persists as a major obstacle for entanglement generation from most quantum dot samples. In this work, the influence of electrostatic environment arising from electrically biased electrodes and/or charged impurities on the fine structure splitting of GaAs/AlGaAs droplet epitaxial quantum dots is studied, by means of numerical simulations considering a realistic quantum dot confining potential and electron-hole exchange interaction within a multiband k · p framework. We find that reduction of the fine structure splitting can be substantially optimized by tilting the field and seeding impurities along the droplet elongation axis. Furthermore, our results provide evidence of how the presence of charged impurities and in-plane bias components, may account for different degrees of splitting manipulation in dots with similar shape, size and growth conditions.
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Affiliation(s)
- Hanz Y Ramírez
- Escuela de Física, Universidad Pedagógica y Tecnológica de Colombia (UPTC), Tunja, 150003, Boyacá, Colombia
| | - Ying-Lin Chou
- Department of Electrophysics, National Chiao Tung University (NCTU), Hsinchu, 30050, Taiwan, Republic of China
| | - Shun-Jen Cheng
- Department of Electrophysics, National Chiao Tung University (NCTU), Hsinchu, 30050, Taiwan, Republic of China.
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Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics. Nat Commun 2018; 9:3058. [PMID: 30076301 PMCID: PMC6076237 DOI: 10.1038/s41467-018-05499-5] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2018] [Accepted: 07/09/2018] [Indexed: 11/09/2022] Open
Abstract
The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in-plane uniaxial stress. By using piezoelectric strain-actuators featuring strain amplification, we study the evolution of the selection rules and excitonic fine structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry-properties of the system. The experimental and computational results suggest that uniaxial stress may be the right tool to obtain quantum-light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.
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Liao Z, Wagner SJ, Alam MZ, Tolstikhin V, Stewart Aitchison J. Vertically integrated spot-size converter in AlGaAs-GaAs. OPTICS LETTERS 2017; 42:4167-4170. [PMID: 29028039 DOI: 10.1364/ol.42.004167] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2017] [Accepted: 09/14/2017] [Indexed: 06/07/2023]
Abstract
We report on the demonstration of a spot size converter (SSC) for monolithic photonic integration at a wavelength of 850 nm on a GaAs substrate. We designed and fabricated a dual-waveguide AlGaAs chip. The design consists of a lower waveguide layer for efficient end-fire coupling to a single-mode fiber, an upper waveguide layer for high refractive index contrast waveguides, and a vertical SSC to connect the two waveguide layers. We measured a SSC conversion efficiency of 91% (or -0.4 dB) between the upper and lower waveguide layers for the TE mode at a wavelength of 850 nm.
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