Bulk band dispersion in Ti2O

Metallic ground states of undoped Ti2O3 films induced by elongated c-axis lattice constant

Ti₂O₃ exhibits unique metal–insulator transition (MIT) at ~ 450 K over a wide temperature range of ~ 150 K. The close relationship between MIT and crystal deformation has been proposed. However, as physical properties are governed by the thermodynamic equilibrium in bulk systems, conducting experimental studies under different lattice deformations remains challenging. Epitaxial thin films can offer high flexibility to accommodate adaptive crystal lattices and provide efficient platforms for investigating the MIT. In this study, we report the synthesis of corundum-type Ti₂O₃ films on various growth temperatures. We found that the metallic ground states appeared in the films grown at low temperatures. The electronic ground states were further investigated by the electronic-structure calculations. Results suggest that the electrical properties of Ti₂O₃ films were governed by the c/a ratio of the crystal structure, and the absence of the MIT was attributed to the lattice deformation characterized by an elongated c lattice constant.

Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials

The metal-insulator transition (MIT) in correlated materials is a novel phenomenon that accompanies a large change in resistivity, often many orders of magnitude. It is important in its own right but its switching behavior in resistivity can be useful for device applications. From the material physics point of view, the starting point of the research on the MIT should be to understand the microscopic mechanism. Here, an overview of recent efforts to unravel the microscopic mechanisms for various types of MITs in correlated materials is provided. Research has focused on transition metal oxides (TMOs), but transition metal chalcogenides have also been studied. Along the way, a new class of MIT materials is discovered, the so-called relativistic Mott insulators in 5d TMOs. Distortions in the MO₆ (M = transition metal) octahedron are found to have a large and peculiar effect on the band structure in an orbital dependent way, possibly paving a way to the orbital selective Mott transition. In the final section, the character of the materials suitable for applications is summarized, followed by a brief discussion of some of the efforts to control MITs in correlated materials, including a dynamical approach using light.

Soft X-ray angle-resolved photoemission with micro-positioning techniques for metallic V₂O₃

Soft X-ray angle-resolved photoemission has been performed for metallic V2O3. By combining a microfocus beam (40 µm × 65 µm) and micro-positioning techniques with a long-working-distance microscope, it has been possible to observe band dispersions from tiny cleavage surfaces with a typical size of several tens of µm. The photoemission spectra show a clear position dependence, reflecting the morphology of the cleaved sample surface. By selecting high-quality flat regions on the sample surface, it has been possible to perform band mapping using both photon-energy and polar-angle dependences, opening the door to three-dimensional angle-resolved photoemission spectroscopy for typical three-dimensional correlated materials where large cleavage planes are rarely obtained.

Anomalous compression and new high-pressure phases of vanadium sesquioxide, V2O3

We report results of a powder x-ray diffraction (XRD) study of vanadium sesquioxide, V2O3, under pressurization in a neon pressure-transmitting medium up to 57 GPa. We have established a bulk modulus value for corundum-type V2O3 of B0 = 150 GPa at B' = 4. This bulk modulus value is the lowest among those known for the corundum-type-structured oxides, e.g. Al2O3, α-Fe2O3, Cr2O3, Ti2O3, and α-Ga2O3. We have proposed that this might be related to the difference in the electronic band structures: at room temperature V2O3 is metallic, but the above corundum-structured sesquioxides are semiconducting or insulating. Around ∼21-27 and ∼50 GPa we registered changes in the XRD patterns that might be addressed to phase transitions. These transitions were sluggish upon room-temperature compression, and hence we additionally facilitated them by the laser heating of one sample. We have refined the XRD patterns of only the first high-pressure phase in an orthorhombic lattice of a Rh2O3(II)-type. Our findings significantly extend the knowledge of the P-T phase diagram of V2O3 and advance the understanding of its properties. We speculate that the elastic properties of V2O3 can be closely linked to its electronic band structure and, consequently, we propose that slightly doped V2O3 (e.g. with Cr) could be a potential candidate for systems in which the bulk modulus value may be remarkably switched by moderate pressure or temperature.

Electronic and magnetic properties of Ti(2)O(3), Cr(2)O(3), and Fe(2)O(3) calculated by the screened exchange hybrid density functional

The electronic and magnetic properties of the transition metal sesqui-oxides Cr(2)O(3), Ti(2)O(3), and Fe(2)O(3) have been calculated using the screened exchange (sX) hybrid density functional. This functional is found to give a band structure, bandgap, and magnetic moment in better agreement with experiment than the local density approximation (LDA) or the LDA+U methods. Ti(2)O(3) is found to be a spin-paired insulator with a bandgap of 0.22 eV in the Ti d orbitals. Cr(2)O(3) in its anti-ferromagnetic phase is an intermediate charge transfer Mott-Hubbard insulator with an indirect bandgap of 3.31 eV. Fe(2)O(3), with anti-ferromagnetic order, is found to be a wide bandgap charge transfer semiconductor with a 2.41 eV gap. Interestingly sX outperforms the HSE functional for the bandgaps of these oxides.

The new high-temperature surface structure on reduced TiO2(001)

Scanning tunnelling microscopy, ultraviolet photoelectron spectroscopy and current imaging tunnelling spectroscopy (STM/UPS/CITS) were used to study the topographic and electronic structure of a high-temperature structure formed on the TiO(2)(001) surface after heating at 1173 K. The STM images revealed different domain-like ordering and periodicity on the surface in comparison to those observed previously. The UPS studies showed the presence of a surface state at energy about 1.1 eV below the Fermi level. This result was confirmed by the CITS data showing pronounced periodic maxima of the electron local density of states at energy around 1.1-1.2 eV below the Fermi level and located on top of every row of the new high-temperature structure. The CITS results recorded for small grains, which coexist with the observed structure, showed that their chemical composition is closer to the Ti(2)O(3) material than to TiO(2-x) for x << 1.

Quasiparticles at the Mott transition in V2O3: wave vector dependence and surface attenuation

We present an angle resolved photoemission study of V2O3, a prototype system for the observation of Mott transitions in correlated materials. We show that the spectral features corresponding to the quasiparticle peak in the metallic phase present a marked wave vector dependence, with a stronger intensity along the GammaZ direction. The analysis of their intensity for different probing depths shows the existence of a characteristic length scale for the attenuation of coherent electronic excitations at the surface. This length scale, which is larger than the thickness of the surface region as normally defined for noncorrelated electronic states, is found to increase when approaching the Mott transition. These results are in agreement with the behavior of quasiparticles at surfaces as predicted by Borghi et al.

SO2 on TiO2(110) and Ti2O3(102) nonpolar surfaces: a DFT study

Density functional molecular cluster calculations have been used to investigate the interaction of SO(2) with defect-free TiO(2)(110) and Ti(2)O(3)(102) surfaces. Adsorbate geometries and chemisorption enthalpies have been computed and discussed. Several local minima have been found for TiO(2)(110), but only one seems to be relevant for the catalytic conversion of SO(2) to S. In agreement with experiment, the bonding of SO(2) to Ti(2)O(3)(102) is much stronger than that on TiO(2)(110). Moreover, our results are consistent with the surface oxidation and the formation of strong Ti-O and Ti-S bonds. On both substrates, the bonding is characterized by a two-way electron flow involving a donation from the SO(2) HOMO into virtual orbitals of surface Lewis acid sites (), assisted by a back-donation from surface states into the SO(2) LUMO. However, the localization of surface states and the strength of back-donation are very different on the two surfaces. On TiO(2)(110), back-donation is weaker, and it involves unsaturated bridging O atoms, while on Ti(2)O(3)(102), it implies the -based valence band maximum and significantly weakens the S-O bond.

Nonlocal Coulomb interactions and metal-insulator transition in Ti2O3: a cluster LDA+DMFT approach

We present an ab initio quantum theory of the metal-insulator transition in Ti2O3. The recently developed cluster LDA+DMFT scheme is applied to describe the many-body features of this compound. The conventional single site DMFT cannot reproduce a low temperature insulating phase for any reasonable values of the Coulomb interaction. We show that the nonlocal Coulomb interactions and the strong chemical bonding within the Ti-Ti pair is the origin of the small gap insulating ground state of Ti2O3.

Prominent quasiparticle peak in the photoemission spectrum of the metallic phase of V2O3

We present the first observation of a prominent quasiparticle peak in the photoemission spectrum of the metallic phase of V2O3 and report new spectral calculations that combine the local-density approximation with the dynamical mean-field theory (using quantum Monte Carlo simulations) to show the development of such a distinct peak with decreasing temperature. The experimental peak width and weight are significantly larger than in the theory.