Isoelectronic delta doping in a ZnSe superlattice: Tellurium as an efficient hole trap

Self-trapped excitons in soft semiconductors

Self-trapped excitons (STEs) have attracted tremendous attention due to their intriguing properties and potential optoelectronic applications. STEs are formed from the lattice distortion induced by the strong electron (exciton)-phonon coupling in soft semiconductors upon photoexcitation, which features in broadband photoluminescence (PL) emission spectra with a large Stokes shift. Recently, significant progress has been achieved in this field but many remain challenges that need to be solved, including the understanding of the underlying physical mechanism, tuning of the performance, and device applications. Along these lines, for the first time, systematic experimental characterizations and advanced theoretical calculations are presented in this review to shed light on the physical mechanism. The possibility of tuning the STEs through multiple degrees of freedom is also presented, along with an overview of the STE-based emerged applications and future research perspectives.

Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites

As emerging efficient emitters, metal-halide perovskites offer the intriguing potential to the low-cost light emitting devices. However, semiconductors generally suffer from severe luminescence quenching due to insufficient confinement of excitons (bound electron-hole pairs). Here, Sn-triggered extrinsic self-trapping of excitons in bulk 2D perovskite crystal, PEA₂ PbI₄ (PEA = phenylethylammonium), is reported, where exciton self-trapping never occurs in its pure state. By creating local potential wells, isoelectronic Sn dopants initiate the localization of excitons, which would further induce the large lattice deformation around the impurities to accommodate the self-trapped excitons. With such self-trapped states, the Sn-doped perovskites generate broadband red-to-near-infrared (NIR) emission at room temperature due to strong exciton-phonon coupling, with a remarkable quantum yield increase from 0.7% to 6.0% (8.6 folds), reaching 42.3% under a 100 mW cm^-2 excitation by extrapolation. The quantum yield enhancement stems from substantial higher thermal quench activation energy of self-trapped excitons than that of free excitons (120 vs 35 meV). It is further revealed that the fast exciton diffusion involves in the initial energy transfer step by transient absorption spectroscopy. This dopant-induced extrinsic exciton self-trapping approach paves the way for extending the spectral range of perovskite emitters, and may find emerging application in efficient supercontinuum sources.

Aharonov-Bohm excitons at elevated temperatures in type-II ZnTe/ZnSe quantum dots

Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, these Aharonov-Bohm oscillations are shown to be remarkably robust and persist until 180 K. This is at least one order of magnitude greater than the typical temperatures in lithographically defined rings. To our knowledge, this is the highest temperature at which the AB effect has been observed in solid-state and molecular nanostructures.