Electronic structure of Ge/Si monolayer strained-layer superlattices

Thermoelectric transport in strained Si and Si/Ge heterostructures

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high-temperature and high-doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of a [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole doping was drastically suppressed due to quantum-well effects, while under electron doping an enhanced power factor was found. For this, we state figures of merit of ZT = 0.2 and 1.4 at T = 300 and 900 K for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.

High thermal conductivity in short-period superlattices

The thermal conductivity of ideal short-period superlattices is computed using harmonic and anharmonic force constants derived from density-functional perturbation theory and by solving the Boltzmann transport equation in the single-mode relaxation time approximation, using silicon-germanium as a paradigmatic case. We show that in the limit of small superlattice period the computed thermal conductivity of the superlattice can exceed that of both the constituent materials. This is found to be due to a dramatic reduction in the scattering of acoustic phonons by optical phonons, leading to very long phonon lifetimes. By variation of the mass mismatch between the constituent materials in the superlattice, it is found that this enhancement in thermal conductivity can be engineered, providing avenues to achieve high thermal conductivities in nanostructured materials.